JP2005277323A5 - - Google Patents

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Publication number
JP2005277323A5
JP2005277323A5 JP2004092093A JP2004092093A JP2005277323A5 JP 2005277323 A5 JP2005277323 A5 JP 2005277323A5 JP 2004092093 A JP2004092093 A JP 2004092093A JP 2004092093 A JP2004092093 A JP 2004092093A JP 2005277323 A5 JP2005277323 A5 JP 2005277323A5
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JP
Japan
Prior art keywords
layer
recess
insulating layer
forming
conductive
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JP2004092093A
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English (en)
Japanese (ja)
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JP2005277323A (ja
JP4628004B2 (ja
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Priority to JP2004092093A priority Critical patent/JP4628004B2/ja
Priority claimed from JP2004092093A external-priority patent/JP4628004B2/ja
Publication of JP2005277323A publication Critical patent/JP2005277323A/ja
Publication of JP2005277323A5 publication Critical patent/JP2005277323A5/ja
Application granted granted Critical
Publication of JP4628004B2 publication Critical patent/JP4628004B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2004092093A 2004-03-26 2004-03-26 薄膜トランジスタの作製方法 Expired - Fee Related JP4628004B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004092093A JP4628004B2 (ja) 2004-03-26 2004-03-26 薄膜トランジスタの作製方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004092093A JP4628004B2 (ja) 2004-03-26 2004-03-26 薄膜トランジスタの作製方法

Publications (3)

Publication Number Publication Date
JP2005277323A JP2005277323A (ja) 2005-10-06
JP2005277323A5 true JP2005277323A5 (enExample) 2007-05-17
JP4628004B2 JP4628004B2 (ja) 2011-02-09

Family

ID=35176615

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004092093A Expired - Fee Related JP4628004B2 (ja) 2004-03-26 2004-03-26 薄膜トランジスタの作製方法

Country Status (1)

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JP (1) JP4628004B2 (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI517378B (zh) 2005-10-17 2016-01-11 半導體能源研究所股份有限公司 半導體裝置及其製造方法
JP2007220360A (ja) * 2006-02-14 2007-08-30 Tokyo Electron Ltd 発光素子、発光素子の製造方法および基板処理装置
JP5371144B2 (ja) * 2007-06-29 2013-12-18 株式会社半導体エネルギー研究所 半導体装置及び半導体装置の作製方法、並びに電子機器
TWI500159B (zh) 2008-07-31 2015-09-11 Semiconductor Energy Lab 半導體裝置和其製造方法
US8106400B2 (en) * 2008-10-24 2012-01-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR101432764B1 (ko) 2008-11-13 2014-08-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치의 제조방법
KR101671544B1 (ko) * 2008-11-21 2016-11-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 표시 장치 및 전자 기기
KR101752640B1 (ko) 2009-03-27 2017-06-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치
WO2011027661A1 (en) 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and method for manufacturing the same
KR101949670B1 (ko) * 2009-10-09 2019-02-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011046048A1 (en) 2009-10-16 2011-04-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR20120096463A (ko) * 2009-10-21 2012-08-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 표시 장치를 갖는 전자 기기
EP2497115A4 (en) 2009-11-06 2015-09-02 Semiconductor Energy Lab SEMICONDUCTOR COMPONENT AND MANUFACTURING METHOD THEREFOR
JP5683125B2 (ja) * 2010-03-24 2015-03-11 莉立 范 電極の敷設方法とその構造
CN103762167A (zh) * 2011-12-31 2014-04-30 广东中显科技有限公司 一种搭桥晶粒多晶硅薄膜晶体管及其制造方法
JP6536634B2 (ja) 2017-07-28 2019-07-03 セイコーエプソン株式会社 電気光学装置および電子機器
KR20250100248A (ko) * 2023-12-26 2025-07-03 엘지디스플레이 주식회사 박막 트랜지스터 기판 및 그를 이용한 표시 장치

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100206877B1 (ko) * 1995-12-28 1999-07-01 구본준 박막트랜지스터 제조방법
JP2003249658A (ja) * 2002-02-26 2003-09-05 Seiko Epson Corp 有機半導体装置

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