JP2005277323A5 - - Google Patents

Download PDF

Info

Publication number
JP2005277323A5
JP2005277323A5 JP2004092093A JP2004092093A JP2005277323A5 JP 2005277323 A5 JP2005277323 A5 JP 2005277323A5 JP 2004092093 A JP2004092093 A JP 2004092093A JP 2004092093 A JP2004092093 A JP 2004092093A JP 2005277323 A5 JP2005277323 A5 JP 2005277323A5
Authority
JP
Japan
Prior art keywords
layer
recess
insulating layer
forming
conductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2004092093A
Other languages
English (en)
Japanese (ja)
Other versions
JP4628004B2 (ja
JP2005277323A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2004092093A priority Critical patent/JP4628004B2/ja
Priority claimed from JP2004092093A external-priority patent/JP4628004B2/ja
Publication of JP2005277323A publication Critical patent/JP2005277323A/ja
Publication of JP2005277323A5 publication Critical patent/JP2005277323A5/ja
Application granted granted Critical
Publication of JP4628004B2 publication Critical patent/JP4628004B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP2004092093A 2004-03-26 2004-03-26 薄膜トランジスタの作製方法 Expired - Fee Related JP4628004B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004092093A JP4628004B2 (ja) 2004-03-26 2004-03-26 薄膜トランジスタの作製方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004092093A JP4628004B2 (ja) 2004-03-26 2004-03-26 薄膜トランジスタの作製方法

Publications (3)

Publication Number Publication Date
JP2005277323A JP2005277323A (ja) 2005-10-06
JP2005277323A5 true JP2005277323A5 (enExample) 2007-05-17
JP4628004B2 JP4628004B2 (ja) 2011-02-09

Family

ID=35176615

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004092093A Expired - Fee Related JP4628004B2 (ja) 2004-03-26 2004-03-26 薄膜トランジスタの作製方法

Country Status (1)

Country Link
JP (1) JP4628004B2 (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI517378B (zh) 2005-10-17 2016-01-11 半導體能源研究所股份有限公司 半導體裝置及其製造方法
JP2007220360A (ja) * 2006-02-14 2007-08-30 Tokyo Electron Ltd 発光素子、発光素子の製造方法および基板処理装置
JP5371144B2 (ja) * 2007-06-29 2013-12-18 株式会社半導体エネルギー研究所 半導体装置及び半導体装置の作製方法、並びに電子機器
TWI500159B (zh) 2008-07-31 2015-09-11 Semiconductor Energy Lab 半導體裝置和其製造方法
US8106400B2 (en) * 2008-10-24 2012-01-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR101432764B1 (ko) * 2008-11-13 2014-08-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치의 제조방법
KR102556313B1 (ko) * 2008-11-21 2023-07-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
KR101752640B1 (ko) 2009-03-27 2017-06-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치
KR102221207B1 (ko) 2009-09-04 2021-03-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치 및 발광 장치를 제작하기 위한 방법
KR102142835B1 (ko) * 2009-10-09 2020-08-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011046048A1 (en) 2009-10-16 2011-04-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
CN102576734B (zh) * 2009-10-21 2015-04-22 株式会社半导体能源研究所 显示装置和包括显示装置的电子设备
KR102481935B1 (ko) 2009-11-06 2022-12-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
JP5683125B2 (ja) * 2010-03-24 2015-03-11 莉立 范 電極の敷設方法とその構造
CN103762167A (zh) * 2011-12-31 2014-04-30 广东中显科技有限公司 一种搭桥晶粒多晶硅薄膜晶体管及其制造方法
JP6536634B2 (ja) * 2017-07-28 2019-07-03 セイコーエプソン株式会社 電気光学装置および電子機器

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100206877B1 (ko) * 1995-12-28 1999-07-01 구본준 박막트랜지스터 제조방법
JP2003249658A (ja) * 2002-02-26 2003-09-05 Seiko Epson Corp 有機半導体装置

Similar Documents

Publication Publication Date Title
JP2009033145A5 (enExample)
JP2009157354A5 (enExample)
JP2005277323A5 (enExample)
TW201614804A (en) Semiconductor device and method for manufacturing semiconductor device
JP2012068627A5 (ja) 半導体装置の作製方法
JP2010532095A5 (enExample)
JP2011044517A5 (enExample)
EP1933385A3 (en) Thin film transistor, thin film transistor substrate, and method of manufacturing the same
JP2009124124A5 (enExample)
ATE544178T1 (de) Halbleiterbauelemente und verfahren zur herstellung
TW200734780A (en) Display device and manufacturing method therefor
EP1701387A3 (en) Organic thin film transistor array panel and manufacturing method thereof
TW200632428A (en) Active matrix substrate and its manufacturing method
JP2006189853A5 (enExample)
JP2005506704A5 (enExample)
JP2009278072A5 (enExample)
TW200610067A (en) Thin channel mosfet with source/drain stressors
JP2004241770A5 (enExample)
JP2004047608A5 (enExample)
JP2005159143A5 (enExample)
JP2008205330A5 (enExample)
JP2001059971A5 (enExample)
EP1677374A3 (en) Thin film transistor, method of manufacturing the same, and flat panel display using the thin film transistor
SG132641A1 (en) Method of manufacturing a semiconductor structure
GB2466163A (en) Semiconductor structure comprising an electrically conductive feature and method of forming a semiconductor structure