JP5371144B2 - 半導体装置及び半導体装置の作製方法、並びに電子機器 - Google Patents
半導体装置及び半導体装置の作製方法、並びに電子機器 Download PDFInfo
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- H—ELECTRICITY
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78645—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate
- H01L29/78648—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate arranged on opposing sides of the channel
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
- H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
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- Microelectronics & Electronic Packaging (AREA)
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- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
Description
4、24、56 凸部
5、25 凹部
2、22、52 表面が平坦な基板
3、53 下地膜
6 半導体膜
7、23、61 レジスト
8 絶縁膜
9 ゲート電極
10 ソース領域
11 ドレイン領域
12 LDD領域
13 チャネル形成領域
15 層間絶縁膜
16 開口部
17 導電層
54 導電膜
55 絶縁膜
20、20a、40、40a、60、60a〜60g TFT
Claims (8)
- 半導体装置の作製方法であって、
表面に、導電膜及び前記導電膜を覆う第1の絶縁膜を有する凸部が設けられた絶縁性基板を形成する工程と、
前記凸部が設けられた基板表面に、厚さが前記凸部の高さより薄い半導体膜を成膜する工程と、
前記基板の凸部及びその両側に隣接する領域を覆う前記半導体膜の上に第1のレジストを形成する工程と、
前記第1のレジストをマスクとして前記半導体膜をエッチングし、前記基板の前記凸部及びその両側に隣接する前記領域を覆う島状半導体膜を形成する工程と、
前記第1のレジストをエッチングして前記基板の前記凸部の上面を覆う前記半導体膜を露出させるとともに、前記基板の前記凸部の両側に隣接する前記領域上に位置する前記半導体膜は前記第1のレジストで覆われたままとする工程と、
前記凸部の前記上面を覆う露出された前記半導体膜をエッチングして薄膜化する工程と、
前記第1のレジストを除去する工程と、
前記基板の前記凸部の両側に隣接する前記領域上に位置する前記半導体膜に不純物を注入してソース領域及びドレイン領域を形成する工程と、
を有することを特徴とする半導体装置の作製方法。 - 前記第1のレジストを除去する工程の後、
少なくとも前記薄膜化された半導体膜を覆う第2の絶縁膜を形成する工程と、
前記第2の絶縁膜上に第2のレジストを形成する工程とを有し、
前記不純物の注入は前記第2の絶縁膜上の前記第2のレジストをマスクとして行われ、
前記第2の絶縁膜の厚さ及び前記第2のレジストの幅は、前記第2のレジストをマスクとした不純物の注入において、前記凸部の側面に沿って延在する前記半導体膜の少なくとも一部に前記第2の絶縁膜を介して不純物が注入されるように定められていることを特徴とする請求項1に記載の半導体装置の作製方法。 - 前記第2の絶縁膜上への前記第2のレジストの形成工程は、
前記第2の絶縁膜上に堆積された前記第2のレジストを前記凸部が有する前記導電膜をマスクとして裏面露光する工程と、
前記第2のレジストの露光された部分を除去する工程と、
を有することを特徴とする請求項2に記載の半導体装置の作製方法。 - 前記絶縁性基板を形成する工程において、
前記導電膜を、側面がテーパ形状となるように形成することを特徴とする請求項1乃至3のいずれか一項に記載の半導体装置の作製方法。 - 半導体装置であって、
表面に、導電膜及び前記導電膜を覆う第1の絶縁膜を有する凸部が設けられた絶縁性基板と、
前記絶縁性基板の前記凸部とその両側に隣接する領域を覆う島状半導体膜と、
前記基板の前記凸部の両側に隣接する前記領域を覆う前記半導体膜に不純物を注入することにより形成されたソース領域及びドレイン領域とを有し、
前記半導体膜は、その全体の厚さが前記凸部の高さより小さく、且つ前記絶縁性基板の前記凸部の上面を覆う部分の厚さは、前記絶縁性基板の前記凸部の両側に隣接する領域を覆う部分より薄いことを特徴とする半導体装置。 - 前記凸部の側面に沿って延在する前記半導体膜の少なくとも一部に前記ソース領域及びドレイン領域より低濃度に不純物が注入された領域を有することを特徴とする請求項5に記載の半導体装置。
- 前記導電膜は、側面がテーパ形状であることを特徴とする請求項5または請求項6のいずれかに記載の半導体装置。
- 請求項5乃至請求項7のいずれか一項に記載の半導体装置を有する電子機器。
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JP5739257B2 (ja) * | 2010-08-05 | 2015-06-24 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP5626726B2 (ja) * | 2010-09-30 | 2014-11-19 | 株式会社ジャパンディスプレイ | 薄膜トランジスタ、表示装置、及び液晶表示装置 |
US8916868B2 (en) | 2011-04-22 | 2014-12-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
US8932913B2 (en) | 2011-04-22 | 2015-01-13 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
US9006803B2 (en) | 2011-04-22 | 2015-04-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing thereof |
US8878288B2 (en) | 2011-04-22 | 2014-11-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US8809854B2 (en) | 2011-04-22 | 2014-08-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US8847233B2 (en) | 2011-05-12 | 2014-09-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having a trenched insulating layer coated with an oxide semiconductor film |
JP5959296B2 (ja) | 2011-05-13 | 2016-08-02 | 株式会社半導体エネルギー研究所 | 半導体装置およびその製造方法 |
TWI567985B (zh) * | 2011-10-21 | 2017-01-21 | 半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
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CN103915483B (zh) * | 2012-12-28 | 2019-06-14 | 瑞萨电子株式会社 | 具有被改造以减少漏电流的沟道芯部的场效应晶体管及制作方法 |
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US20090001467A1 (en) | 2009-01-01 |
US8426945B2 (en) | 2013-04-23 |
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