JP5412066B2 - 半導体装置の作製方法 - Google Patents
半導体装置の作製方法 Download PDFInfo
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- JP5412066B2 JP5412066B2 JP2008190445A JP2008190445A JP5412066B2 JP 5412066 B2 JP5412066 B2 JP 5412066B2 JP 2008190445 A JP2008190445 A JP 2008190445A JP 2008190445 A JP2008190445 A JP 2008190445A JP 5412066 B2 JP5412066 B2 JP 5412066B2
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- 239000004065 semiconductor Substances 0.000 title claims description 157
- 238000004519 manufacturing process Methods 0.000 title claims description 66
- 238000000034 method Methods 0.000 title claims description 58
- 239000000758 substrate Substances 0.000 claims description 48
- 230000015572 biosynthetic process Effects 0.000 claims description 44
- 239000012535 impurity Substances 0.000 claims description 24
- 230000008569 process Effects 0.000 claims description 14
- 239000011810 insulating material Substances 0.000 claims description 7
- 239000010408 film Substances 0.000 description 245
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 38
- 239000010410 layer Substances 0.000 description 27
- 239000007789 gas Substances 0.000 description 23
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 17
- 229910021417 amorphous silicon Inorganic materials 0.000 description 17
- 229910052710 silicon Inorganic materials 0.000 description 17
- 239000010703 silicon Substances 0.000 description 17
- 239000000463 material Substances 0.000 description 16
- 238000005530 etching Methods 0.000 description 12
- 230000002093 peripheral effect Effects 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 239000011229 interlayer Substances 0.000 description 8
- 238000001020 plasma etching Methods 0.000 description 8
- 229910052814 silicon oxide Inorganic materials 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 6
- 238000005499 laser crystallization Methods 0.000 description 6
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
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- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 3
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- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
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- -1 argon ion Chemical class 0.000 description 3
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- 229910052691 Erbium Inorganic materials 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
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- 229910004283 SiO 4 Inorganic materials 0.000 description 2
- 229910052775 Thulium Inorganic materials 0.000 description 2
- 229910052769 Ytterbium Inorganic materials 0.000 description 2
- LFVGISIMTYGQHF-UHFFFAOYSA-N ammonium dihydrogen phosphate Chemical compound [NH4+].OP(O)([O-])=O LFVGISIMTYGQHF-UHFFFAOYSA-N 0.000 description 2
- 229910000387 ammonium dihydrogen phosphate Inorganic materials 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000013522 chelant Substances 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 229910052839 forsterite Inorganic materials 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- HCWCAKKEBCNQJP-UHFFFAOYSA-N magnesium orthosilicate Chemical compound [Mg+2].[Mg+2].[O-][Si]([O-])([O-])[O-] HCWCAKKEBCNQJP-UHFFFAOYSA-N 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 235000019837 monoammonium phosphate Nutrition 0.000 description 2
- 235000019796 monopotassium phosphate Nutrition 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- PILOURHZNVHRME-UHFFFAOYSA-N [Na].[Ba] Chemical compound [Na].[Ba] PILOURHZNVHRME-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000005280 amorphization Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- AQCDIIAORKRFCD-UHFFFAOYSA-N cadmium selenide Chemical compound [Cd]=[Se] AQCDIIAORKRFCD-UHFFFAOYSA-N 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- CPBQJMYROZQQJC-UHFFFAOYSA-N helium neon Chemical compound [He].[Ne] CPBQJMYROZQQJC-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910000402 monopotassium phosphate Inorganic materials 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- PJNZPQUBCPKICU-UHFFFAOYSA-N phosphoric acid;potassium Chemical compound [K].OP(O)(O)=O PJNZPQUBCPKICU-UHFFFAOYSA-N 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
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- 229910052761 rare earth metal Inorganic materials 0.000 description 1
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- 239000010979 ruby Substances 0.000 description 1
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- 229910000077 silane Inorganic materials 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
Description
2 平坦な基板
3 下地膜
4 島状導電膜
4a 島状絶縁膜
5 絶縁膜(ゲート絶縁膜)
6 凸部
7 凹部
8 アモルファスシリコン膜
9 多結晶シリコン膜
10 レジスト
12 ソース領域
13 ドレイン領域
14 チャネル形成領域
15 層間絶縁膜
16 開口部(コンタクトホール)
17 導電層
18 ゲート電極
19 ゲート絶縁膜
20、20a TFT
22 バリア層
23 サイドウォール
30、30a、30b TFT
Claims (5)
- 少なくとも表面が絶縁性の基板の前記表面上に島状導電膜を形成し該島状導電膜を絶縁膜で覆って凸部を形成する工程と、
前記凸部の両側に前記凸部から離間して前記絶縁性基板の前記表面上に設けられた更なる凸部を形成し、前記凸部と前記更なる凸部との間に凹部を画定する工程と、
前記凸部を覆うアモルファス半導体膜を成膜する工程と、
前記アモルファス半導体膜にレーザ光を照射し溶融状態にして結晶化することで前記凸部上の膜厚が前記凸部の両側に隣接する領域における膜厚より小さい、結晶化された半導体膜を形成する工程と、
前記凸部の両側に隣接する領域の前記結晶化された半導体膜に一導電型の不純物元素を含ませてソース領域及びドレイン領域を形成する工程とを有する半導体装置の作製方法。 - 少なくとも表面が絶縁性の基板の前記表面上に、少なくともチャネル形成領域に対応する箇所に島状導電膜を形成し該島状導電膜を絶縁膜で覆って凸部を形成する工程と、
前記凸部の両側に前記凸部から離間して前記絶縁性基板の前記表面上に設けられた更なる凸部を形成し、前記凸部と前記更なる凸部との間に凹部を画定する工程と、
前記凸部を覆うアモルファス半導体膜を成膜する工程と、
前記アモルファス半導体膜にレーザ光を照射し完全溶融状態にして結晶化するとともに前記凸部上の溶融した半導体の一部が前記凸部の両側に隣接する領域へと流れることで前記凸部上の膜厚が前記凸部の両側に隣接する領域における膜厚より小さい、結晶化された半導体膜を形成する工程と、
前記凸部の両側に隣接する領域の前記結晶化された半導体膜に一導電型の不純物元素を含ませてソース領域及びドレイン領域を形成する工程とを有する半導体装置の作製方法。 - 前記絶縁性基板が透光性を有し、
前記結晶化された半導体膜に一導電型の不純物元素を含ませる工程が、
前記結晶化された半導体膜上にレジストを形成する工程と、
前記導電膜をマスクとして前記レジストを、前記絶縁性基板を介して露光する工程と、
露光された前記レジストの部分を除去する工程と、
残った前記レジストをマスクとして前記結晶化された半導体膜に前記不純物元素を含ませる工程とを有することを特徴とする請求項1または請求項2に記載の半導体装置の作製方法。 - 前記凸部を形成する工程が、前記島状導電膜を形成した後、前記島状導電膜を前記絶縁膜で覆う前に、前記島状導電膜の側壁に隣接する絶縁材料からなるサイドウォールを形成する工程を有することを特徴とする請求項1乃至請求項3のいずれか一項に記載の半導体装置の作製方法。
- 前記アモルファス半導体膜は、前記凸部の高さと概ね同じか、より大きい膜厚を有することを特徴とする請求項1乃至請求項4のいずれか一項に記載の半導体装置の作製方法。
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JP2009049398A JP2009049398A (ja) | 2009-03-05 |
JP5412066B2 true JP5412066B2 (ja) | 2014-02-12 |
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US (1) | US8048749B2 (ja) |
JP (1) | JP5412066B2 (ja) |
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JP2008252068A (ja) * | 2007-03-08 | 2008-10-16 | Semiconductor Energy Lab Co Ltd | 半導体装置及びその作製方法 |
KR102467353B1 (ko) * | 2015-11-27 | 2022-11-15 | 삼성디스플레이 주식회사 | 표시 기판, 표시 기판의 제조 방법 및 표시 기판을 포함하는 표시 장치 |
CN116868350A (zh) * | 2021-02-18 | 2023-10-10 | 株式会社日本显示器 | 半导体器件和半导体器件的制作方法 |
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JP2003204067A (ja) | 2001-12-28 | 2003-07-18 | Semiconductor Energy Lab Co Ltd | 表示装置およびそれを用いた電子機器 |
JP4030759B2 (ja) | 2001-12-28 | 2008-01-09 | 株式会社半導体エネルギー研究所 | 表示装置の作製方法 |
JP4030758B2 (ja) | 2001-12-28 | 2008-01-09 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US6933527B2 (en) | 2001-12-28 | 2005-08-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and semiconductor device production system |
EP1326273B1 (en) | 2001-12-28 | 2012-01-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US6841797B2 (en) | 2002-01-17 | 2005-01-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device formed over a surface with a drepession portion and a projection portion |
TW200302511A (en) | 2002-01-28 | 2003-08-01 | Semiconductor Energy Lab | Semiconductor device and method of manufacturing the same |
TWI261358B (en) | 2002-01-28 | 2006-09-01 | Semiconductor Energy Lab | Semiconductor device and method of manufacturing the same |
US7749818B2 (en) * | 2002-01-28 | 2010-07-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing the same |
JP4137461B2 (ja) * | 2002-02-08 | 2008-08-20 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP4522660B2 (ja) | 2003-03-14 | 2010-08-11 | シャープ株式会社 | 薄膜トランジスタ基板の製造方法 |
JP2005223027A (ja) * | 2004-02-04 | 2005-08-18 | Sony Corp | 表示装置およびその製造方法 |
-
2008
- 2008-07-23 US US12/178,356 patent/US8048749B2/en not_active Expired - Fee Related
- 2008-07-24 JP JP2008190445A patent/JP5412066B2/ja not_active Expired - Fee Related
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US8048749B2 (en) | 2011-11-01 |
JP2009049398A (ja) | 2009-03-05 |
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