JP4433404B2 - 半導体装置、液晶装置、電子デバイス及び半導体装置の製造方法 - Google Patents
半導体装置、液晶装置、電子デバイス及び半導体装置の製造方法 Download PDFInfo
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- JP4433404B2 JP4433404B2 JP2005001796A JP2005001796A JP4433404B2 JP 4433404 B2 JP4433404 B2 JP 4433404B2 JP 2005001796 A JP2005001796 A JP 2005001796A JP 2005001796 A JP2005001796 A JP 2005001796A JP 4433404 B2 JP4433404 B2 JP 4433404B2
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- 239000004065 semiconductor Substances 0.000 title claims description 133
- 238000004519 manufacturing process Methods 0.000 title claims description 37
- 239000004973 liquid crystal related substance Substances 0.000 title description 14
- 239000000758 substrate Substances 0.000 claims description 48
- 238000000034 method Methods 0.000 claims description 43
- 238000005530 etching Methods 0.000 claims description 12
- 238000010438 heat treatment Methods 0.000 claims description 5
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 239000010408 film Substances 0.000 description 197
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 23
- 229910052814 silicon oxide Inorganic materials 0.000 description 20
- 230000015572 biosynthetic process Effects 0.000 description 15
- 229920002120 photoresistant polymer Polymers 0.000 description 13
- 239000010409 thin film Substances 0.000 description 11
- 239000011159 matrix material Substances 0.000 description 8
- 238000002425 crystallisation Methods 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000000155 melt Substances 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000007790 solid phase Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 230000008025 crystallization Effects 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000005224 laser annealing Methods 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 229910001092 metal group alloy Inorganic materials 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 101100489584 Solanum lycopersicum TFT1 gene Proteins 0.000 description 1
- 239000000370 acceptor Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- WTKKCYNZRWIVKL-UHFFFAOYSA-N tantalum Chemical compound [Ta+5] WTKKCYNZRWIVKL-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133509—Filters, e.g. light shielding masks
- G02F1/133512—Light shielding layers, e.g. black matrix
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78633—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device with a light shield
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
- H01L31/02164—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors for shielding light, e.g. light blocking layers, cold shields for infrared detectors
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Nonlinear Science (AREA)
- Ceramic Engineering (AREA)
- Mathematical Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
- Recrystallisation Techniques (AREA)
Description
まず、図3(A)に示すように、基板10の第1の主面10a上にフォトレジスト膜13を形成する。フォトレジスト膜13は、遮光膜12を成膜するための溝を形成すべき領域を含む、より広い領域に形成する。続いて、同図(B)に示すように、上記溝を形成すべき領域についてフォトレジスト膜13を除去し開口を形成する。フォトレジスト膜13の形状は、基板10側の断面がやや小さくなっている逆テーパー型が好ましい。次に、同図(C)に示すように、エッチング法によって基板10に溝を形成する。溝の深さを、遮光膜を形成しやすい厚さ(例えば100nm〜500nm)と同程度にしておくことによって、第1の主面と遮光膜表面とを平坦に形成しやすくなる。
次に、再度図1を参照して、半導体素子形成工程を説明する。
図5に、本発明に係る液晶装置の例として液晶表示装置100を示す。
図6は、本発明に係る電子機器の例を示す図である。本発明に係る電子機器は、上述のようにTFTを形成して得られた、本発明に係る半導体装置であるアクティブマトリクス基板を備えることを特徴とする。
Claims (3)
- 基板の第1の主面に溝を形成する第一工程と、
前記溝に遮光膜を形成する第二工程であって、該遮光膜を、その表面と前記第1の主面との間に略段差がないように形成する工程と、
前記遮光膜の上に前記第1の主面の一部と接する絶縁層を形成する工程であって、該遮光膜及び該絶縁層の界面と該第1の主面の一部との間に略段差がないように、該絶縁層を形成する工程と、
前記遮光膜の上方に半導体素子を形成する第三工程であって、前記基板および前記遮光膜上に半導体膜を形成する工程と、熱処理によって該半導体膜を溶融結晶化する工程と、を含む工程と、
を含み、
前記第一工程は、
前記第1の主面の前記溝を形成すべき領域上に開口を有するエッチングマスクを形成する工程と、
前記エッチングマスクを介して前記基板をエッチングする工程と、を含み、
前記第二工程は、
前記第一工程において、前記基板に形成された溝内及び前記基板上に残留させた前記エッチングマスク上に遮光膜を形成する工程と、前記エッチングマスクを除去する工程と、を含み、
前記エッチングマスクの形状は、前記基板側の断面が小さくなっている逆テーパー型である、半導体装置の製造方法。 - 請求項1に記載の半導体装置の製造方法において、
前記第二工程は、前記遮光膜を形成後、前記第1の主面と前記遮光膜表面とを略平坦にする工程をさらに含む、半導体装置の製造方法。 - 請求項1に記載の半導体装置の製造方法において、
前記熱処理は、前記半導体膜にレーザ光を照射することによって行われること、
を特徴とする、半導体装置の製造方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005001796A JP4433404B2 (ja) | 2005-01-06 | 2005-01-06 | 半導体装置、液晶装置、電子デバイス及び半導体装置の製造方法 |
US11/296,407 US20060145281A1 (en) | 2005-01-06 | 2005-12-08 | Semiconductor device, liquid crystal device, electronic apparatus, and method of manufacturing semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005001796A JP4433404B2 (ja) | 2005-01-06 | 2005-01-06 | 半導体装置、液晶装置、電子デバイス及び半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
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JP2006190836A JP2006190836A (ja) | 2006-07-20 |
JP4433404B2 true JP4433404B2 (ja) | 2010-03-17 |
Family
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Family Applications (1)
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JP2005001796A Expired - Fee Related JP4433404B2 (ja) | 2005-01-06 | 2005-01-06 | 半導体装置、液晶装置、電子デバイス及び半導体装置の製造方法 |
Country Status (2)
Country | Link |
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US (1) | US20060145281A1 (ja) |
JP (1) | JP4433404B2 (ja) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20080081605A (ko) * | 2007-03-06 | 2008-09-10 | 삼성전자주식회사 | 절연 모기판에 얼라인 마크를 형성하는 단계를 포함하는액정 표시 장치의 제조 방법 |
KR20160028587A (ko) * | 2014-09-03 | 2016-03-14 | 삼성디스플레이 주식회사 | 박막 트랜지스터 어레이 기판과 이의 제조 방법 및 이를 포함하는 액정 표시 장치 |
CN107342375B (zh) * | 2017-08-21 | 2019-05-31 | 深圳市华星光电半导体显示技术有限公司 | 柔性显示面板的制作方法及柔性显示面板 |
JP6690671B2 (ja) | 2018-06-20 | 2020-04-28 | セイコーエプソン株式会社 | 電気光学装置および電子機器 |
JP6791283B2 (ja) | 2019-02-15 | 2020-11-25 | セイコーエプソン株式会社 | 電気光学装置、電子機器、および電気光学装置の製造方法 |
JP6908086B2 (ja) * | 2019-10-29 | 2021-07-21 | セイコーエプソン株式会社 | 電気光学装置、電気光学装置の製造方法および電子機器 |
JP2020126250A (ja) * | 2020-03-30 | 2020-08-20 | セイコーエプソン株式会社 | 電気光学装置および電子機器 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6042855A (ja) * | 1983-08-19 | 1985-03-07 | Hitachi Ltd | 半導体装置 |
JPH0777264B2 (ja) * | 1986-04-02 | 1995-08-16 | 三菱電機株式会社 | 薄膜トランジスタの製造方法 |
-
2005
- 2005-01-06 JP JP2005001796A patent/JP4433404B2/ja not_active Expired - Fee Related
- 2005-12-08 US US11/296,407 patent/US20060145281A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
JP2006190836A (ja) | 2006-07-20 |
US20060145281A1 (en) | 2006-07-06 |
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