ATE544178T1 - Halbleiterbauelemente und verfahren zur herstellung - Google Patents

Halbleiterbauelemente und verfahren zur herstellung

Info

Publication number
ATE544178T1
ATE544178T1 AT07805079T AT07805079T ATE544178T1 AT E544178 T1 ATE544178 T1 AT E544178T1 AT 07805079 T AT07805079 T AT 07805079T AT 07805079 T AT07805079 T AT 07805079T AT E544178 T1 ATE544178 T1 AT E544178T1
Authority
AT
Austria
Prior art keywords
fin
gate electrode
electrode material
thickness
upstanding
Prior art date
Application number
AT07805079T
Other languages
English (en)
Inventor
Jan Sonsky
Gerben Doornbos
Original Assignee
Nxp Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nxp Bv filed Critical Nxp Bv
Application granted granted Critical
Publication of ATE544178T1 publication Critical patent/ATE544178T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]
    • H10D30/0243—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET] using dummy structures having essentially the same shapes as the semiconductor bodies, e.g. to provide stability
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/011—Manufacture or treatment comprising FinFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
    • H10D86/215—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI comprising FinFETs

Landscapes

  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
AT07805079T 2006-07-11 2007-07-09 Halbleiterbauelemente und verfahren zur herstellung ATE544178T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP06116968 2006-07-11
PCT/IB2007/052698 WO2008007331A2 (en) 2006-07-11 2007-07-09 Semiconductor devices and methods of manufacture thereof

Publications (1)

Publication Number Publication Date
ATE544178T1 true ATE544178T1 (de) 2012-02-15

Family

ID=38739387

Family Applications (1)

Application Number Title Priority Date Filing Date
AT07805079T ATE544178T1 (de) 2006-07-11 2007-07-09 Halbleiterbauelemente und verfahren zur herstellung

Country Status (5)

Country Link
US (1) US7919364B2 (de)
EP (1) EP2041780B1 (de)
CN (1) CN101490822B (de)
AT (1) ATE544178T1 (de)
WO (1) WO2008007331A2 (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008110497A1 (en) * 2007-03-14 2008-09-18 Nxp B.V. Finfet with two independent gates and method for fabricating the same
JP2009088134A (ja) 2007-09-28 2009-04-23 Elpida Memory Inc 半導体装置、半導体装置の製造方法並びにデータ処理システム
JP5410666B2 (ja) 2007-10-22 2014-02-05 ルネサスエレクトロニクス株式会社 半導体装置
CN102420232B (zh) * 2010-09-28 2014-08-13 中国科学院微电子研究所 一种闪存器件及其形成方法
CN103367162B (zh) * 2012-04-08 2016-05-18 中国科学院微电子研究所 鳍形场效应晶体管制造方法
US9647066B2 (en) * 2012-04-24 2017-05-09 Taiwan Semiconductor Manufacturing Company, Ltd. Dummy FinFET structure and method of making same
US8697515B2 (en) * 2012-06-06 2014-04-15 Taiwan Semiconductor Manufacturing Company, Ltd. Method of making a FinFET device
US8617961B1 (en) 2012-07-18 2013-12-31 International Business Machines Corporation Post-gate isolation area formation for fin field effect transistor device
CN104425601B (zh) * 2013-08-30 2018-02-16 中国科学院微电子研究所 半导体器件及其制造方法
CN105531813B (zh) * 2013-09-04 2018-10-12 株式会社索思未来 半导体装置
CN104465751B (zh) * 2013-09-16 2018-08-31 联华电子股份有限公司 半导体装置
US9373719B2 (en) * 2013-09-16 2016-06-21 United Microelectronics Corp. Semiconductor device
US9647113B2 (en) 2014-03-05 2017-05-09 International Business Machines Corporation Strained FinFET by epitaxial stressor independent of gate pitch
CN105633157B (zh) * 2015-03-31 2019-07-30 中国科学院微电子研究所 半导体器件及其制造方法
CN107634088A (zh) * 2016-07-18 2018-01-26 中芯国际集成电路制造(上海)有限公司 一种半导体器件及其制造方法、电子装置
US10032759B2 (en) * 2016-11-28 2018-07-24 Taiwan Semiconductor Manufacturing Company Limited High-density semiconductor device
US10424663B2 (en) * 2017-05-23 2019-09-24 International Business Machines Corporation Super long channel device within VFET architecture
FR3089343B1 (fr) * 2018-11-29 2021-10-08 Commissariat Energie Atomique Procede de realisation d’un transistor fet

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6348409B1 (en) * 1999-04-01 2002-02-19 Taiwan Semiconductor Manufacturing Company Self aligned contact plug technology
US6787402B1 (en) * 2001-04-27 2004-09-07 Advanced Micro Devices, Inc. Double-gate vertical MOSFET transistor and fabrication method
US6770516B2 (en) * 2002-09-05 2004-08-03 Taiwan Semiconductor Manufacturing Company Method of forming an N channel and P channel FINFET device on the same semiconductor substrate
US6853020B1 (en) * 2002-11-08 2005-02-08 Advanced Micro Devices, Inc. Double-gate semiconductor device
US6855582B1 (en) * 2003-06-12 2005-02-15 Advanced Micro Devices, Inc. FinFET gate formation using reverse trim and oxide polish
US6855607B2 (en) * 2003-06-12 2005-02-15 Advanced Micro Devices, Inc. Multi-step chemical mechanical polishing of a gate area in a FinFET
US6756643B1 (en) * 2003-06-12 2004-06-29 Advanced Micro Devices, Inc. Dual silicon layer for chemical mechanical polishing planarization
US7355253B2 (en) * 2003-08-22 2008-04-08 International Business Machines Corporation Strained-channel Fin field effect transistor (FET) with a uniform channel thickness and separate gates
JP2005116969A (ja) * 2003-10-10 2005-04-28 Toshiba Corp 半導体装置及びその製造方法
US7105390B2 (en) * 2003-12-30 2006-09-12 Intel Corporation Nonplanar transistors with metal gate electrodes
JP4852694B2 (ja) * 2004-03-02 2012-01-11 独立行政法人産業技術総合研究所 半導体集積回路およびその製造方法
KR100560818B1 (ko) * 2004-06-02 2006-03-13 삼성전자주식회사 반도체 소자 및 그 제조 방법
US7422946B2 (en) * 2004-09-29 2008-09-09 Intel Corporation Independently accessed double-gate and tri-gate transistors in same process flow

Also Published As

Publication number Publication date
US7919364B2 (en) 2011-04-05
WO2008007331A2 (en) 2008-01-17
CN101490822A (zh) 2009-07-22
EP2041780A2 (de) 2009-04-01
WO2008007331A3 (en) 2008-03-06
CN101490822B (zh) 2011-03-16
EP2041780B1 (de) 2012-02-01
US20090209092A1 (en) 2009-08-20

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