DE60236436D1 - Einzelelektrontransistoren und verfahren zur herstellung - Google Patents

Einzelelektrontransistoren und verfahren zur herstellung

Info

Publication number
DE60236436D1
DE60236436D1 DE60236436T DE60236436T DE60236436D1 DE 60236436 D1 DE60236436 D1 DE 60236436D1 DE 60236436 T DE60236436 T DE 60236436T DE 60236436 T DE60236436 T DE 60236436T DE 60236436 D1 DE60236436 D1 DE 60236436D1
Authority
DE
Germany
Prior art keywords
insulating layer
electrode
nanoparticle
electrodes
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60236436T
Other languages
English (en)
Inventor
Louis C Brousseau
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
North Carolina State University
University of California
Original Assignee
North Carolina State University
University of California
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by North Carolina State University, University of California filed Critical North Carolina State University
Application granted granted Critical
Publication of DE60236436D1 publication Critical patent/DE60236436D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G01N27/4146—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS involving nanosized elements, e.g. nanotubes, nanowires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/7613—Single electron transistors; Coulomb blockade devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/936—Specified use of nanostructure for electronic or optoelectronic application in a transistor or 3-terminal device
    • Y10S977/937—Single electron transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Analytical Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Molecular Biology (AREA)
  • Computer Hardware Design (AREA)
  • Electrochemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Bipolar Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
DE60236436T 2001-07-13 2002-07-12 Einzelelektrontransistoren und verfahren zur herstellung Expired - Fee Related DE60236436D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/905,319 US6483125B1 (en) 2001-07-13 2001-07-13 Single electron transistors in which the thickness of an insulating layer defines spacing between electrodes
PCT/US2002/022137 WO2003007384A2 (en) 2001-07-13 2002-07-12 Single-electron transistors and fabrication methods

Publications (1)

Publication Number Publication Date
DE60236436D1 true DE60236436D1 (de) 2010-07-01

Family

ID=25420626

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60236436T Expired - Fee Related DE60236436D1 (de) 2001-07-13 2002-07-12 Einzelelektrontransistoren und verfahren zur herstellung

Country Status (8)

Country Link
US (2) US6483125B1 (de)
EP (1) EP1407492B1 (de)
JP (1) JP4814487B2 (de)
AT (1) ATE468611T1 (de)
AU (1) AU2002322459A1 (de)
DE (1) DE60236436D1 (de)
TW (1) TW557546B (de)
WO (1) WO2003007384A2 (de)

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JP4297106B2 (ja) * 2005-02-23 2009-07-15 セイコーエプソン株式会社 膜パターンの形成方法及びデバイスの製造方法、電気光学装置及び電子機器
US7309650B1 (en) 2005-02-24 2007-12-18 Spansion Llc Memory device having a nanocrystal charge storage region and method
US7378310B1 (en) 2005-04-27 2008-05-27 Spansion Llc Method for manufacturing a memory device having a nanocrystal charge storage region
US7335594B1 (en) 2005-04-27 2008-02-26 Spansion Llc Method for manufacturing a memory device having a nanocrystal charge storage region
JP4613314B2 (ja) * 2005-05-26 2011-01-19 独立行政法人産業技術総合研究所 単結晶の製造方法
US20070202648A1 (en) * 2006-02-28 2007-08-30 Samsung Electronics Co. Ltd. Memory device and method of manufacturing the same
EP2248157B1 (de) * 2008-02-11 2019-09-04 Qucor Pty Ltd Steuerung und auslesen von elektronen- oder löcherspinn
CA2735735C (en) * 2008-09-02 2016-11-22 The Governing Council Of The University Of Toronto Nanostructured microelectrodes and biosensing devices incorporating the same
CA3021580A1 (en) 2015-06-25 2016-12-29 Barry L. Merriman Biomolecular sensors and methods
CN109328301B (zh) 2016-01-28 2021-03-12 罗斯韦尔生物技术股份有限公司 大规模并行dna测序装置
JP7280590B2 (ja) 2016-01-28 2023-05-24 ロズウェル バイオテクノロジーズ，インコーポレイテッド 大スケールの分子電子工学センサアレイを使用する被分析物を測定するための方法および装置
JP6854532B2 (ja) 2016-02-09 2021-04-07 ロズウェル バイオテクノロジーズ，インコーポレイテッド 電子的、標識フリーのｄｎａおよびゲノムシークエンシング
US10597767B2 (en) 2016-02-22 2020-03-24 Roswell Biotechnologies, Inc. Nanoparticle fabrication
US9829456B1 (en) 2016-07-26 2017-11-28 Roswell Biotechnologies, Inc. Method of making a multi-electrode structure usable in molecular sensing devices
KR102622275B1 (ko) 2017-01-10 2024-01-05 로스웰 바이오테크놀로지스 인코포레이티드 Dna 데이터 저장을 위한 방법들 및 시스템들
WO2018136148A1 (en) 2017-01-19 2018-07-26 Roswell Biotechnologies, Inc. Solid state sequencing devices comprising two dimensional layer materials
US10508296B2 (en) 2017-04-25 2019-12-17 Roswell Biotechnologies, Inc. Enzymatic circuits for molecular sensors
KR102692957B1 (ko) 2017-04-25 2024-08-06 로스웰 엠이 아이엔씨. 분자 센서들을 위한 효소 회로들
EP4023764A3 (de) 2017-05-09 2022-09-21 Roswell Biotechnologies, Inc. Bindungssondenschaltungen für molekulare sensoren
WO2019046589A1 (en) 2017-08-30 2019-03-07 Roswell Biotechnologies, Inc. PROCESSIVE ENZYME MOLECULAR ELECTRONIC SENSORS FOR STORING DNA DATA
WO2019075100A1 (en) 2017-10-10 2019-04-18 Roswell Biotechnologies, Inc. METHODS, APPARATUS AND SYSTEMS FOR STORING DNA DATA WITHOUT AMPLIFICATION

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Also Published As

Publication number Publication date
EP1407492B1 (de) 2010-05-19
WO2003007384A3 (en) 2003-05-08
JP2005526371A (ja) 2005-09-02
JP4814487B2 (ja) 2011-11-16
EP1407492A2 (de) 2004-04-14
ATE468611T1 (de) 2010-06-15
US6483125B1 (en) 2002-11-19
US20030025133A1 (en) 2003-02-06
AU2002322459A1 (en) 2003-01-29
US6784082B2 (en) 2004-08-31
WO2003007384A2 (en) 2003-01-23
TW557546B (en) 2003-10-11

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Legal Events

Date Code Title Description
8339 Ceased/non-payment of the annual fee