ATE468611T1 - Einzelelektrontransistoren und verfahren zur herstellung - Google Patents

Einzelelektrontransistoren und verfahren zur herstellung

Info

Publication number
ATE468611T1
ATE468611T1 AT02756451T AT02756451T ATE468611T1 AT E468611 T1 ATE468611 T1 AT E468611T1 AT 02756451 T AT02756451 T AT 02756451T AT 02756451 T AT02756451 T AT 02756451T AT E468611 T1 ATE468611 T1 AT E468611T1
Authority
AT
Austria
Prior art keywords
insulating layer
electrode
nanoparticle
electrodes
substrate
Prior art date
Application number
AT02756451T
Other languages
English (en)
Inventor
Louis Brousseau
Original Assignee
Univ North Carolina State
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ North Carolina State filed Critical Univ North Carolina State
Application granted granted Critical
Publication of ATE468611T1 publication Critical patent/ATE468611T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/7613—Single electron transistors; Coulomb blockade devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G01N27/4146—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS involving nanosized elements, e.g. nanotubes, nanowires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/936—Specified use of nanostructure for electronic or optoelectronic application in a transistor or 3-terminal device
    • Y10S977/937—Single electron transistor
AT02756451T 2001-07-13 2002-07-12 Einzelelektrontransistoren und verfahren zur herstellung ATE468611T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/905,319 US6483125B1 (en) 2001-07-13 2001-07-13 Single electron transistors in which the thickness of an insulating layer defines spacing between electrodes
PCT/US2002/022137 WO2003007384A2 (en) 2001-07-13 2002-07-12 Single-electron transistors and fabrication methods

Publications (1)

Publication Number Publication Date
ATE468611T1 true ATE468611T1 (de) 2010-06-15

Family

ID=25420626

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02756451T ATE468611T1 (de) 2001-07-13 2002-07-12 Einzelelektrontransistoren und verfahren zur herstellung

Country Status (8)

Country Link
US (2) US6483125B1 (de)
EP (1) EP1407492B1 (de)
JP (1) JP4814487B2 (de)
AT (1) ATE468611T1 (de)
AU (1) AU2002322459A1 (de)
DE (1) DE60236436D1 (de)
TW (1) TW557546B (de)
WO (1) WO2003007384A2 (de)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB9724642D0 (en) * 1997-11-21 1998-01-21 British Tech Group Single electron devices
US6653653B2 (en) * 2001-07-13 2003-11-25 Quantum Logic Devices, Inc. Single-electron transistors and fabrication methods in which a projecting feature defines spacing between electrodes
TW531890B (en) * 2002-02-27 2003-05-11 Ind Tech Res Inst Single electron device fabricated from nanoparticle derivatives
WO2004005587A2 (en) * 2002-07-08 2004-01-15 The Regents Of The University Of California Surface nanopatterning
US8070988B2 (en) * 2003-09-09 2011-12-06 International Technology Center Nano-carbon hybrid structures
US7224039B1 (en) 2003-09-09 2007-05-29 International Technology Center Polymer nanocomposite structures for integrated circuits
JP2007526452A (ja) 2003-11-20 2007-09-13 バイオワーン・エルエルシー 生物学的物質を検出する方法及び装置
KR100671813B1 (ko) * 2004-10-15 2007-01-19 세이코 엡슨 가부시키가이샤 박막 패턴 형성 방법, 반도체 장치, 전기 광학 장치, 및전자 기기
JP4297106B2 (ja) * 2005-02-23 2009-07-15 セイコーエプソン株式会社 膜パターンの形成方法及びデバイスの製造方法、電気光学装置及び電子機器
US7309650B1 (en) 2005-02-24 2007-12-18 Spansion Llc Memory device having a nanocrystal charge storage region and method
US7378310B1 (en) 2005-04-27 2008-05-27 Spansion Llc Method for manufacturing a memory device having a nanocrystal charge storage region
US7335594B1 (en) 2005-04-27 2008-02-26 Spansion Llc Method for manufacturing a memory device having a nanocrystal charge storage region
JP4613314B2 (ja) * 2005-05-26 2011-01-19 独立行政法人産業技術総合研究所 単結晶の製造方法
US20070202648A1 (en) * 2006-02-28 2007-08-30 Samsung Electronics Co. Ltd. Memory device and method of manufacturing the same
JP5306377B2 (ja) * 2008-02-11 2013-10-02 クコー ピーティーワイ リミテッド 電子又はホールスピンの制御及び読み取り
ES2636664T3 (es) * 2008-09-02 2017-10-06 The Governing Council Of The University Of Toronto Microelectrodos nanoestructurados y dispositivos de biodetección que los incorporan
EP3314245A4 (de) 2015-06-25 2019-02-27 Roswell Biotechnologies, Inc Biomolekulare sensoren und verfahren
EP3408220A4 (de) 2016-01-28 2019-09-04 Roswell Biotechnologies, Inc Verfahren und vorrichtung zum messen von analyten unter verwendung von grossskaligen molekularelektronischen sensorarrays
JP7080489B2 (ja) 2016-01-28 2022-06-06 ロズウェル バイオテクノロジーズ，インコーポレイテッド 超パラレルｄｎａ配列決定装置
US10737263B2 (en) 2016-02-09 2020-08-11 Roswell Biotechnologies, Inc. Electronic label-free DNA and genome sequencing
US10597767B2 (en) 2016-02-22 2020-03-24 Roswell Biotechnologies, Inc. Nanoparticle fabrication
US9829456B1 (en) 2016-07-26 2017-11-28 Roswell Biotechnologies, Inc. Method of making a multi-electrode structure usable in molecular sensing devices
WO2018132457A1 (en) 2017-01-10 2018-07-19 Roswell Biotechnologies, Inc. Methods and systems for dna data storage
KR20230158636A (ko) 2017-01-19 2023-11-20 로스웰 바이오테크놀로지스 인코포레이티드 2차원 레이어 재료를 포함하는 솔리드 스테이트 시퀀싱 디바이스들
KR20200002897A (ko) 2017-04-25 2020-01-08 로스웰 바이오테크놀로지스 인코포레이티드 분자 센서들을 위한 효소 회로들
US10508296B2 (en) 2017-04-25 2019-12-17 Roswell Biotechnologies, Inc. Enzymatic circuits for molecular sensors
EP4023764A3 (de) 2017-05-09 2022-09-21 Roswell Biotechnologies, Inc. Bindungssondenschaltungen für molekulare sensoren
US11371955B2 (en) 2017-08-30 2022-06-28 Roswell Biotechnologies, Inc. Processive enzyme molecular electronic sensors for DNA data storage
US11100404B2 (en) 2017-10-10 2021-08-24 Roswell Biotechnologies, Inc. Methods, apparatus and systems for amplification-free DNA data storage

Family Cites Families (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB8406955D0 (en) 1984-03-16 1984-04-18 Serono Diagnostics Ltd Assay
DE3513168A1 (de) 1985-04-12 1986-10-16 Thomas 8000 München Dandekar Biosensor bestehend aus einem halbleiter auf silizium oder kohlenstoffbasis (elektronischer teil) und nukleinbasen (od. anderen biol. monomeren)
US4894339A (en) 1985-12-18 1990-01-16 Seitaikinouriyou Kagakuhin Sinseizogijutsu Kenkyu Kumiai Immobilized enzyme membrane for a semiconductor sensor
JPS6350745A (ja) 1986-08-20 1988-03-03 Fuji Photo Film Co Ltd 化学センサ−
DE3827314C1 (de) 1988-08-11 1989-10-19 Christoff Prof. Dr. Braeuchle
US5219577A (en) 1990-06-22 1993-06-15 The Regents Of The University Of California Biologically active composition having a nanocrystalline core
WO1993008464A1 (en) 1991-10-21 1993-04-29 Holm Kennedy James W Method and device for biochemical sensing
US5846708A (en) 1991-11-19 1998-12-08 Massachusetts Institiute Of Technology Optical and electrical methods and apparatus for molecule detection
US5405454A (en) * 1992-03-19 1995-04-11 Matsushita Electric Industrial Co., Ltd. Electrically insulated silicon structure and producing method therefor
US5420746A (en) 1993-04-13 1995-05-30 The United States Of America As Represented By The Secretary Of The Army Single electron device including clusters of pure carbon atoms
US5828076A (en) * 1994-04-19 1998-10-27 Siemens Aktiengesellschaft Microelectronic component and process for its production
JPH0878669A (ja) * 1994-09-02 1996-03-22 Hitachi Ltd 半導体装置および半導体装置の製造方法
JP3149718B2 (ja) 1995-02-03 2001-03-26 松下電器産業株式会社 単電子トランジスタ
US5576563A (en) 1995-04-24 1996-11-19 Motorola Inc. Chemical probe field effect transistor for measuring the surface potential of a gate electrode in response to chemical exposure
DE19522351A1 (de) * 1995-06-20 1997-01-09 Max Planck Gesellschaft Verfahren zur Herstellung von Quantenstrukturen, insbesondere von Quantenpunkten und Tunnelbarrieren sowie Bauelemente mit solchen Quantenstrukturen
KR100272702B1 (ko) 1996-03-26 2000-11-15 윤종용 터널 효과 장치 및 그 제조 방법
DE19621994C1 (de) 1996-05-31 1997-06-12 Siemens Ag Einzelelektron-Speicherzellenanordnung
US6066265A (en) 1996-06-19 2000-05-23 Kionix, Inc. Micromachined silicon probe for scanning probe microscopy
US5747839A (en) 1996-09-30 1998-05-05 Motorola, Inc. Chemical sensing trench field effect transistor
US5922537A (en) 1996-11-08 1999-07-13 N.o slashed.AB Immunoassay, Inc. Nanoparticles biosensor
US6103868A (en) 1996-12-27 2000-08-15 The Regents Of The University Of California Organically-functionalized monodisperse nanocrystals of metals
EP0865078A1 (de) 1997-03-13 1998-09-16 Hitachi Europe Limited Verfahren zum Ablegen von nanometrischen Partikeln
US5900728A (en) 1997-03-20 1999-05-04 International Business Machines Corporation Alternating current magnetic force microscopy system with probe having integrated coil
US5900729A (en) 1997-03-20 1999-05-04 International Business Machines Corporation Magnetic force microscopy probe with integrated coil
US6159620A (en) 1997-03-31 2000-12-12 The Regents Of The University Of California Single-electron solid state electronic device
DE69825939T2 (de) 1997-05-30 2005-09-15 Matsushita Electric Industrial Co., Ltd., Kadoma Anordnung mit Quanten-Schachteln
KR100223807B1 (ko) * 1997-06-04 1999-10-15 구본준 반도체 소자의 제조방법
JP3452764B2 (ja) * 1997-06-11 2003-09-29 科学技術振興事業団 超微細突起構造体の製造方法
US5892252A (en) 1998-02-05 1999-04-06 Motorola, Inc. Chemical sensing trench field effect transistor and method for same
CA2329859A1 (en) 1998-04-20 1999-12-02 Allen C. Templeton Nanometer particles containing a reactive monolayer
US6211530B1 (en) * 1998-06-12 2001-04-03 Motorola, Inc. Sparse-carrier devices and method of fabrication
US6218175B1 (en) * 1998-10-30 2001-04-17 International Business Machines Corporation Nano-devices using block-copolymers
JP2000349275A (ja) * 1999-06-01 2000-12-15 Nec Corp 単一電子素子とその製造方法
JP2003507889A (ja) * 1999-08-18 2003-02-25 ノース・キャロライナ・ステイト・ユニヴァーシティ 化学的にゲート動作する単一電子トランジスタを使用したセンシングデバイス
US6410934B1 (en) * 2001-02-09 2002-06-25 The Board Of Trustees Of The University Of Illinois Silicon nanoparticle electronic switches

Also Published As

Publication number Publication date
EP1407492B1 (de) 2010-05-19
AU2002322459A1 (en) 2003-01-29
WO2003007384A2 (en) 2003-01-23
US6483125B1 (en) 2002-11-19
US20030025133A1 (en) 2003-02-06
EP1407492A2 (de) 2004-04-14
DE60236436D1 (de) 2010-07-01
TW557546B (en) 2003-10-11
US6784082B2 (en) 2004-08-31
JP2005526371A (ja) 2005-09-02
WO2003007384A3 (en) 2003-05-08
JP4814487B2 (ja) 2011-11-16

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