ATE545156T1 - Einzelelektrontransistoren und verfahren zur herstellung in welchen ein vorspringendes teil das raum zwischen die elektroden definiert - Google Patents

Einzelelektrontransistoren und verfahren zur herstellung in welchen ein vorspringendes teil das raum zwischen die elektroden definiert

Info

Publication number
ATE545156T1
ATE545156T1 AT02759144T AT02759144T ATE545156T1 AT E545156 T1 ATE545156 T1 AT E545156T1 AT 02759144 T AT02759144 T AT 02759144T AT 02759144 T AT02759144 T AT 02759144T AT E545156 T1 ATE545156 T1 AT E545156T1
Authority
AT
Austria
Prior art keywords
electrodes
projecting feature
electrode
production
space
Prior art date
Application number
AT02759144T
Other languages
English (en)
Inventor
Louis C Brousseau Iii
Original Assignee
Quantum Logic Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Quantum Logic Devices Inc filed Critical Quantum Logic Devices Inc
Application granted granted Critical
Publication of ATE545156T1 publication Critical patent/ATE545156T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N99/00—Subject matter not provided for in other groups of this subclass
    • H10N99/05—Devices based on quantum mechanical effects, e.g. quantum interference devices or metal single-electron transistors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/7613—Single electron transistors; Coulomb blockade devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/962—Quantum dots and lines
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/936—Specified use of nanostructure for electronic or optoelectronic application in a transistor or 3-terminal device
    • Y10S977/937—Single electron transistor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24479—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness
    • Y10T428/24612—Composite web or sheet
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24479—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness
    • Y10T428/24612—Composite web or sheet
    • Y10T428/2462—Composite web or sheet with partial filling of valleys on outer surface
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24628—Nonplanar uniform thickness material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24628—Nonplanar uniform thickness material
    • Y10T428/24669—Aligned or parallel nonplanarities
    • Y10T428/24678—Waffle-form

Landscapes

  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Theoretical Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Computer Hardware Design (AREA)
  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
AT02759144T 2001-07-13 2002-07-12 Einzelelektrontransistoren und verfahren zur herstellung in welchen ein vorspringendes teil das raum zwischen die elektroden definiert ATE545156T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/905,471 US6653653B2 (en) 2001-07-13 2001-07-13 Single-electron transistors and fabrication methods in which a projecting feature defines spacing between electrodes
PCT/US2002/022260 WO2003007385A1 (en) 2001-07-13 2002-07-12 Single-electron transistors and fabrication methods in which a projecting feature defines spacing between electrodes

Publications (1)

Publication Number Publication Date
ATE545156T1 true ATE545156T1 (de) 2012-02-15

Family

ID=25420883

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02759144T ATE545156T1 (de) 2001-07-13 2002-07-12 Einzelelektrontransistoren und verfahren zur herstellung in welchen ein vorspringendes teil das raum zwischen die elektroden definiert

Country Status (6)

Country Link
US (2) US6653653B2 (de)
EP (1) EP1407493B1 (de)
JP (1) JP4343683B2 (de)
AT (1) ATE545156T1 (de)
TW (1) TW558740B (de)
WO (1) WO2003007385A1 (de)

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SG121707A1 (en) * 2002-03-04 2006-05-26 Micron Technology Inc Method and apparatus for flip-chip packaging providing testing capability
US6975035B2 (en) * 2002-03-04 2005-12-13 Micron Technology, Inc. Method and apparatus for dielectric filling of flip chip on interposer assembly
SG115455A1 (en) * 2002-03-04 2005-10-28 Micron Technology Inc Methods for assembly and packaging of flip chip configured dice with interposer
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US20040036170A1 (en) * 2002-08-20 2004-02-26 Lee Teck Kheng Double bumping of flexible substrate for first and second level interconnects
US7208784B2 (en) * 2003-10-07 2007-04-24 Quantum Logic Devices, Inc. Single-electron transistor for detecting biomolecules
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KR100708644B1 (ko) * 2004-02-26 2007-04-17 삼성에스디아이 주식회사 박막 트랜지스터, 이를 구비한 평판 표시장치, 박막트랜지스터의 제조방법, 평판 표시장치의 제조방법, 및도너 시트의 제조방법
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US6946693B1 (en) * 2004-04-27 2005-09-20 Wisconsin Alumni Research Foundation Electromechanical electron transfer devices
JP4112597B2 (ja) * 2004-09-30 2008-07-02 独立行政法人科学技術振興機構 自己組織化材料のパターニング方法、及び自己組織化材料パターニング基板とその生産方法、並びに自己組織化材料パターニング基板を用いたフォトマスク
JP4613314B2 (ja) * 2005-05-26 2011-01-19 独立行政法人産業技術総合研究所 単結晶の製造方法
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Also Published As

Publication number Publication date
EP1407493B1 (de) 2012-02-08
EP1407493A1 (de) 2004-04-14
JP4343683B2 (ja) 2009-10-14
JP2004535677A (ja) 2004-11-25
US20030012930A1 (en) 2003-01-16
US20040113144A1 (en) 2004-06-17
US6653653B2 (en) 2003-11-25
WO2003007385A1 (en) 2003-01-23
TW558740B (en) 2003-10-21

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