DE602004003476D1 - Kondensator, halbleiterbauelement mit einem kondensator und verfahren zur herstellung derselben - Google Patents

Kondensator, halbleiterbauelement mit einem kondensator und verfahren zur herstellung derselben

Info

Publication number
DE602004003476D1
DE602004003476D1 DE602004003476T DE602004003476T DE602004003476D1 DE 602004003476 D1 DE602004003476 D1 DE 602004003476D1 DE 602004003476 T DE602004003476 T DE 602004003476T DE 602004003476 T DE602004003476 T DE 602004003476T DE 602004003476 D1 DE602004003476 D1 DE 602004003476D1
Authority
DE
Germany
Prior art keywords
condenser
production
semiconductor component
semiconductor
component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE602004003476T
Other languages
English (en)
Other versions
DE602004003476T2 (de
Inventor
Hans-Joachim Barth
Petra Felsner
Erdem Kaltalioglu
Uwe Kerst
Thomas Schafbauer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies AG
Original Assignee
Infineon Technologies AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies AG filed Critical Infineon Technologies AG
Publication of DE602004003476D1 publication Critical patent/DE602004003476D1/de
Application granted granted Critical
Publication of DE602004003476T2 publication Critical patent/DE602004003476T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/228—Terminals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/33—Thin- or thick-film capacitors 
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H01L27/0233—Integrated injection logic structures [I2L]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
DE602004003476T 2003-02-20 2004-02-17 Kondensator, halbleiterbauelement mit einem kondensator und verfahren zur herstellung derselben Expired - Lifetime DE602004003476T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US370535 1999-08-09
US10/370,535 US7268383B2 (en) 2003-02-20 2003-02-20 Capacitor and method of manufacturing a capacitor
PCT/EP2004/050145 WO2004075218A1 (en) 2003-02-20 2004-02-17 Capacitor, semiconductor device with a capacitor and method of manufactuing thereof

Publications (2)

Publication Number Publication Date
DE602004003476D1 true DE602004003476D1 (de) 2007-01-11
DE602004003476T2 DE602004003476T2 (de) 2007-09-20

Family

ID=32868184

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602004003476T Expired - Lifetime DE602004003476T2 (de) 2003-02-20 2004-02-17 Kondensator, halbleiterbauelement mit einem kondensator und verfahren zur herstellung derselben

Country Status (6)

Country Link
US (2) US7268383B2 (de)
EP (1) EP1595268B1 (de)
JP (1) JP2006512787A (de)
CN (1) CN1751367B (de)
DE (1) DE602004003476T2 (de)
WO (1) WO2004075218A1 (de)

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JP4835082B2 (ja) * 2005-09-28 2011-12-14 株式会社デンソー 半導体装置及びその製造方法
CN1953181B (zh) * 2005-10-21 2010-10-13 松下电器产业株式会社 模拟数字转换器
JP4927494B2 (ja) * 2005-10-21 2012-05-09 パナソニック株式会社 アナログディジタル変換器、およびアナログディジタル変換器の設計方法
US20080173981A1 (en) * 2007-01-19 2008-07-24 Chinthakindi Anil K Integrated circuit (ic) chip with one or more vertical plate capacitors and method of making the capacitors
US7456463B2 (en) * 2007-02-06 2008-11-25 International Business Machines Corporation Capacitor having electrodes at different depths to reduce parasitic capacitance
JP4357577B2 (ja) 2007-06-14 2009-11-04 太陽誘電株式会社 コンデンサ及びその製造方法
US20090014832A1 (en) * 2007-07-09 2009-01-15 Peter Baumgartner Semiconductor Device with Reduced Capacitance Tolerance Value
JP4382841B2 (ja) 2007-08-20 2009-12-16 太陽誘電株式会社 コンデンサ及びその製造方法
US10283443B2 (en) 2009-11-10 2019-05-07 Taiwan Semiconductor Manufacturing Co., Ltd. Chip package having integrated capacitor
US8810002B2 (en) * 2009-11-10 2014-08-19 Taiwan Semiconductor Manufacturing Company, Ltd. Vertical metal insulator metal capacitor
US9941195B2 (en) 2009-11-10 2018-04-10 Taiwan Semiconductor Manufacturing Co., Ltd. Vertical metal insulator metal capacitor
US9343237B2 (en) 2009-11-10 2016-05-17 Taiwan Semiconductor Manufacturing Company, Ltd. Vertical metal insulator metal capacitor
US8877601B2 (en) * 2010-09-21 2014-11-04 Freescale Semiconductor, Inc. Lateral capacitor and method of making
CN102543729B (zh) * 2010-12-31 2014-03-12 中芯国际集成电路制造(上海)有限公司 电容的形成方法及其电容结构
CN102446892B (zh) * 2011-10-12 2013-06-26 上海华力微电子有限公司 一种金属-氧化物-金属电容及其制作方法
JP5863381B2 (ja) * 2011-10-17 2016-02-16 ルネサスエレクトロニクス株式会社 半導体装置及び半導体装置の製造方法
US20130334657A1 (en) * 2012-06-15 2013-12-19 Taiwan Semiconductor Manufacturing Co., Ltd. Planar interdigitated capacitor structures and methods of forming the same
CN103515350B (zh) * 2012-06-18 2016-02-10 上海华虹宏力半导体制造有限公司 垂直金属/绝缘层/金属mim电容及其制造方法
US8901711B1 (en) 2013-08-07 2014-12-02 International Business Machines Corporation Horizontal metal-insulator-metal capacitor
KR102193685B1 (ko) 2014-05-02 2020-12-21 삼성전자주식회사 수직 구조의 비휘발성 메모리 소자
CN105321886B (zh) 2014-05-29 2019-07-05 联华电子股份有限公司 电容器结构及其制造方法
US20160343796A1 (en) * 2015-05-22 2016-11-24 Mediatek Inc. Capacitor structure and method for forming the same
US9881738B2 (en) * 2015-08-05 2018-01-30 Globalfoundries Inc. Capacitor structures with embedded electrodes and fabrication methods thereof
KR101748949B1 (ko) * 2015-09-18 2017-06-21 서울대학교산학협력단 반도체 메모리 소자 및 이의 제조 방법
CN106409809B (zh) * 2016-11-25 2019-04-26 新昌县峰特年智能科技有限公司 一种带有电容器的半导体器件
CN106340509B (zh) * 2016-11-25 2019-01-15 广西天融电气科技有限公司 一种半导体器件的制造方法
CN114121494B (zh) * 2021-11-30 2023-04-18 上海交通大学 3d多层高介电常数高功率密度超级电容器和微加工方法

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US6531730B2 (en) * 1993-08-10 2003-03-11 Micron Technology, Inc. Capacitor compatible with high dielectric constant materials having a low contact resistance layer and the method for forming same
US5625232A (en) * 1994-07-15 1997-04-29 Texas Instruments Incorporated Reliability of metal leads in high speed LSI semiconductors using dummy vias
JPH08273979A (ja) 1995-03-31 1996-10-18 Sumitomo Metal Ind Ltd セラミックスコンデンサアレイ
JP3432963B2 (ja) * 1995-06-15 2003-08-04 沖電気工業株式会社 半導体集積回路
JP3535615B2 (ja) * 1995-07-18 2004-06-07 株式会社ルネサステクノロジ 半導体集積回路装置
KR0156646B1 (ko) * 1995-10-13 1998-10-15 문정환 반도체 기억소자의 캐패시터 제조방법
US6346741B1 (en) * 1997-11-20 2002-02-12 Advanced Technology Materials, Inc. Compositions and structures for chemical mechanical polishing of FeRAM capacitors and method of fabricating FeRAM capacitors using same
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US6255186B1 (en) * 1998-05-21 2001-07-03 Micron Technology, Inc. Methods of forming integrated circuitry and capacitors having a capacitor electrode having a base and a pair of walls projecting upwardly therefrom
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DE19950364A1 (de) 1999-10-19 2001-04-26 Infineon Technologies Ag Integrierte Schaltungsanordnung mit mindestens einem Kondensator und Verfahren zu deren Herstellung
US6117747A (en) * 1999-11-22 2000-09-12 Chartered Semiconductor Manufacturing Ltd. Integration of MOM capacitor into dual damascene process
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US6822312B2 (en) * 2000-04-07 2004-11-23 Koninklijke Philips Electronics N.V. Interdigitated multilayer capacitor structure for deep sub-micron CMOS
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JP2002043306A (ja) 2000-07-25 2002-02-08 Fujitsu Ltd 層間絶縁膜材料並びにそれを用いた半導体装置とその製造方法
JP4895420B2 (ja) * 2000-08-10 2012-03-14 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US6524926B1 (en) * 2000-11-27 2003-02-25 Lsi Logic Corporation Metal-insulator-metal capacitor formed by damascene processes between metal interconnect layers and method of forming same
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Also Published As

Publication number Publication date
US20040164339A1 (en) 2004-08-26
US7268383B2 (en) 2007-09-11
US7615440B2 (en) 2009-11-10
EP1595268A1 (de) 2005-11-16
DE602004003476T2 (de) 2007-09-20
CN1751367B (zh) 2010-06-16
EP1595268B1 (de) 2006-11-29
JP2006512787A (ja) 2006-04-13
WO2004075218A1 (en) 2004-09-02
CN1751367A (zh) 2006-03-22
US20070294871A1 (en) 2007-12-27

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