DE60239493D1 - Halbleiterbauelement und verfahren zu seiner herstellung - Google Patents

Halbleiterbauelement und verfahren zu seiner herstellung

Info

Publication number
DE60239493D1
DE60239493D1 DE60239493T DE60239493T DE60239493D1 DE 60239493 D1 DE60239493 D1 DE 60239493D1 DE 60239493 T DE60239493 T DE 60239493T DE 60239493 T DE60239493 T DE 60239493T DE 60239493 D1 DE60239493 D1 DE 60239493D1
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Germany
Prior art keywords
production
semiconductor component
semiconductor
component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60239493T
Other languages
English (en)
Inventor
Shuichi Chiba
Masahiko Ishiguri
Koichi Murata
Eiji Watanabe
Michiaki Tamagawa
Akira Satoh
Yasushi Toida
Kazuhiro Misawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Semiconductor Ltd
Original Assignee
Fujitsu Semiconductor Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Semiconductor Ltd filed Critical Fujitsu Semiconductor Ltd
Application granted granted Critical
Publication of DE60239493D1 publication Critical patent/DE60239493D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
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DE60239493T 2002-06-21 2002-06-21 Halbleiterbauelement und verfahren zu seiner herstellung Expired - Lifetime DE60239493D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2002/006245 WO2004001839A1 (ja) 2002-06-21 2002-06-21 半導体装置及びその製造方法

Publications (1)

Publication Number Publication Date
DE60239493D1 true DE60239493D1 (de) 2011-04-28

Family

ID=29727367

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60239493T Expired - Lifetime DE60239493D1 (de) 2002-06-21 2002-06-21 Halbleiterbauelement und verfahren zu seiner herstellung

Country Status (8)

Country Link
US (1) US7095045B2 (de)
EP (1) EP1517364B1 (de)
JP (1) JP3978449B2 (de)
KR (1) KR100643645B1 (de)
CN (2) CN100382262C (de)
DE (1) DE60239493D1 (de)
TW (1) TW546841B (de)
WO (1) WO2004001839A1 (de)

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WO2004093184A1 (ja) * 2003-04-15 2004-10-28 Fujitsu Limited 半導体装置及びその製造方法
TWI263856B (en) 2004-11-22 2006-10-11 Au Optronics Corp IC chip, IC assembly and flat display
DE102005051857A1 (de) * 2005-05-25 2007-02-22 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. UBM-PAD, Lötkontakt und Verfahren zur Herstellung einer Lötverbindung
JP4998270B2 (ja) 2005-12-27 2012-08-15 富士通セミコンダクター株式会社 半導体装置とその製造方法
KR100859641B1 (ko) * 2006-02-20 2008-09-23 주식회사 네패스 금속간 화합물 성장을 억제시킨 솔더 범프가 형성된 반도체칩 및 제조 방법
JP5050384B2 (ja) 2006-03-31 2012-10-17 富士通セミコンダクター株式会社 半導体装置およびその製造方法
JP5238206B2 (ja) * 2006-09-26 2013-07-17 株式会社フジクラ 配線基板、電子部品およびその製造方法
KR100857365B1 (ko) * 2007-02-28 2008-09-05 주식회사 네패스 반도체 장치의 범프 구조물
CN101431037B (zh) * 2007-11-06 2011-03-30 宏茂微电子(上海)有限公司 晶圆级封装结构的制作方法
JP5627835B2 (ja) * 2007-11-16 2014-11-19 ローム株式会社 半導体装置および半導体装置の製造方法
TWI394253B (zh) * 2009-03-25 2013-04-21 Advanced Semiconductor Eng 具有凸塊之晶片及具有凸塊之晶片之封裝結構
JP2011165862A (ja) * 2010-02-09 2011-08-25 Sony Corp 半導体装置、チップ・オン・チップの実装構造、半導体装置の製造方法及びチップ・オン・チップの実装構造の形成方法
US8492892B2 (en) 2010-12-08 2013-07-23 International Business Machines Corporation Solder bump connections
US9941176B2 (en) * 2012-05-21 2018-04-10 Taiwan Semiconductor Manufacturing Company, Ltd. Selective solder bump formation on wafer
US9537066B2 (en) * 2013-07-30 2017-01-03 Dowa Electronics Materials Co., Ltd. Method of manufacturing semiconductor light emitting device, and semiconductor light emitting device
US8779604B1 (en) * 2013-11-06 2014-07-15 Chipmos Technologies Inc. Semiconductor structure and manufacturing method thereof
JP6450560B2 (ja) * 2014-10-24 2019-01-09 新日本無線株式会社 半導体装置およびその製造方法
CN108962431A (zh) * 2017-05-23 2018-12-07 昊佰电子科技（上海）有限公司 一种单层导电布及用于该单层导电布的模切装置
CN112366131B (zh) * 2020-10-21 2023-01-03 武汉新芯集成电路制造有限公司 一种半导体器件的制造方法

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JPWO2004001839A1 (ja) 2005-10-27
EP1517364B1 (de) 2011-03-16
CN100382262C (zh) 2008-04-16
EP1517364A1 (de) 2005-03-23
CN100536103C (zh) 2009-09-02
CN1628379A (zh) 2005-06-15
KR20040111695A (ko) 2004-12-31
WO2004001839A1 (ja) 2003-12-31
EP1517364A4 (de) 2006-06-07
KR100643645B1 (ko) 2006-11-10
CN101145533A (zh) 2008-03-19
TW546841B (en) 2003-08-11
JP3978449B2 (ja) 2007-09-19

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