CN100382262C - 半导体装置及其制造方法 - Google Patents
半导体装置及其制造方法 Download PDFInfo
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- CN100382262C CN100382262C CNB028291050A CN02829105A CN100382262C CN 100382262 C CN100382262 C CN 100382262C CN B028291050 A CNB028291050 A CN B028291050A CN 02829105 A CN02829105 A CN 02829105A CN 100382262 C CN100382262 C CN 100382262C
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- 238000000034 method Methods 0.000 title claims description 42
- 239000000523 sample Substances 0.000 claims description 46
- 239000000758 substrate Substances 0.000 claims description 26
- 238000004519 manufacturing process Methods 0.000 claims description 14
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 10
- 239000012528 membrane Substances 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 229910052763 palladium Inorganic materials 0.000 claims description 5
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 235000011837 pasties Nutrition 0.000 claims description 2
- 229920001721 polyimide Polymers 0.000 claims description 2
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- 239000010410 layer Substances 0.000 description 66
- 230000015572 biosynthetic process Effects 0.000 description 15
- 229910045601 alloy Inorganic materials 0.000 description 11
- 239000000956 alloy Substances 0.000 description 11
- 229910052718 tin Inorganic materials 0.000 description 9
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 7
- 229910020836 Sn-Ag Inorganic materials 0.000 description 5
- 229910020988 Sn—Ag Inorganic materials 0.000 description 5
- 229910020816 Sn Pb Inorganic materials 0.000 description 4
- 229910020922 Sn-Pb Inorganic materials 0.000 description 4
- 229910008783 Sn—Pb Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 230000000875 corresponding effect Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
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- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- 239000012790 adhesive layer Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910052745 lead Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 208000034656 Contusions Diseases 0.000 description 1
- 229910000978 Pb alloy Inorganic materials 0.000 description 1
- 229910020220 Pb—Sn Inorganic materials 0.000 description 1
- 229910008599 TiW Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
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- 238000010894 electron beam technology Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000000053 physical method Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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Abstract
Description
Claims (9)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2002/006245 WO2004001839A1 (ja) | 2002-06-21 | 2002-06-21 | 半導体装置及びその製造方法 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2007101807338A Division CN100536103C (zh) | 2002-06-21 | 2002-06-21 | 半导体装置的制造方法 |
Publications (2)
Publication Number | Publication Date |
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CN1628379A CN1628379A (zh) | 2005-06-15 |
CN100382262C true CN100382262C (zh) | 2008-04-16 |
Family
ID=29727367
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB028291050A Expired - Fee Related CN100382262C (zh) | 2002-06-21 | 2002-06-21 | 半导体装置及其制造方法 |
CNB2007101807338A Expired - Fee Related CN100536103C (zh) | 2002-06-21 | 2002-06-21 | 半导体装置的制造方法 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2007101807338A Expired - Fee Related CN100536103C (zh) | 2002-06-21 | 2002-06-21 | 半导体装置的制造方法 |
Country Status (8)
Country | Link |
---|---|
US (1) | US7095045B2 (zh) |
EP (1) | EP1517364B1 (zh) |
JP (1) | JP3978449B2 (zh) |
KR (1) | KR100643645B1 (zh) |
CN (2) | CN100382262C (zh) |
DE (1) | DE60239493D1 (zh) |
TW (1) | TW546841B (zh) |
WO (1) | WO2004001839A1 (zh) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4213672B2 (ja) * | 2003-04-15 | 2009-01-21 | 富士通マイクロエレクトロニクス株式会社 | 半導体装置及びその製造方法 |
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- 2002-06-21 WO PCT/JP2002/006245 patent/WO2004001839A1/ja active Application Filing
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- 2002-06-21 CN CNB2007101807338A patent/CN100536103C/zh not_active Expired - Fee Related
- 2002-06-21 EP EP02738780A patent/EP1517364B1/en not_active Expired - Fee Related
- 2002-06-21 DE DE60239493T patent/DE60239493D1/de not_active Expired - Lifetime
- 2002-06-21 KR KR1020047019063A patent/KR100643645B1/ko not_active IP Right Cessation
- 2002-06-27 TW TW091114197A patent/TW546841B/zh not_active IP Right Cessation
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Publication number | Publication date |
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EP1517364A1 (en) | 2005-03-23 |
JP3978449B2 (ja) | 2007-09-19 |
TW546841B (en) | 2003-08-11 |
KR100643645B1 (ko) | 2006-11-10 |
KR20040111695A (ko) | 2004-12-31 |
DE60239493D1 (de) | 2011-04-28 |
CN101145533A (zh) | 2008-03-19 |
US7095045B2 (en) | 2006-08-22 |
US20050151250A1 (en) | 2005-07-14 |
EP1517364B1 (en) | 2011-03-16 |
CN100536103C (zh) | 2009-09-02 |
CN1628379A (zh) | 2005-06-15 |
WO2004001839A1 (ja) | 2003-12-31 |
EP1517364A4 (en) | 2006-06-07 |
JPWO2004001839A1 (ja) | 2005-10-27 |
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