JP4998270B2 - 半導体装置とその製造方法 - Google Patents
半導体装置とその製造方法 Download PDFInfo
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- JP4998270B2 JP4998270B2 JP2007551841A JP2007551841A JP4998270B2 JP 4998270 B2 JP4998270 B2 JP 4998270B2 JP 2007551841 A JP2007551841 A JP 2007551841A JP 2007551841 A JP2007551841 A JP 2007551841A JP 4998270 B2 JP4998270 B2 JP 4998270B2
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- film
- pad
- interlayer insulating
- semiconductor device
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19041—Component type being a capacitor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
Description
半導体基板と、
前記半導体基板に形成された複数の半導体素子を含む回路部と、
前記回路部を覆って、前記半導体基板上に形成され、最上層に開口を有するパッシベーション膜を含む、絶縁積層と、
前記絶縁積層中に形成された強誘電体キャパシタと、
前記絶縁積層中に形成され、前記半導体素子、前記強誘電体キャパシタに接続された配線構造と、
前記配線構造に接続されて前記絶縁積層中に形成され、前記パッシベーション膜の開口において露出されたパッド電極構造と、
Pd膜を含み、前記パッシベーション膜の開口を介して前記パッド電極構造を覆い、前記パッシベーション膜上に延在する導電性パッド保護膜と、
前記導電性パッド保護膜と同一の膜で形成され、前記導電性パッド保護膜とは電気的に分離された状態で、前記強誘電体キャパシタ上方を含んで前記パッシベーション膜上に延在する導電性キャパシタ保護膜と、
を有する半導体装置
が提供される。
図4A−4Kは、第1の実施例による半導体装置の製造方法の主要工程を概略的に示す断面図である。
以下、本発明の特徴を付記する。
(付記1)
半導体基板と、
前記半導体基板に形成された複数の半導体素子を含む回路部と、
前記回路部を覆って、前記半導体基板上に形成され、最上層に開口を有するパッシベーション膜を含む、絶縁積層と、
前記絶縁積層中に形成された強誘電体キャパシタと、
前記絶縁積層中に形成され、前記半導体素子、前記強誘電体キャパシタに接続された配線構造と、
前記配線構造に接続されて前記絶縁積層中に形成され、前記パッシベーション膜の開口において露出されたパッド電極構造と、
Pd膜を含み、前記パッシベーション膜の開口を介して前記パッド電極構造を覆い、前記パッシベーション膜上に延在する導電性パッド保護膜と、
前記導電性パッド保護膜を介し、前記パッド電極構造に接続されたスタッドバンプまたはボンディングワイヤと、
を有する半導体装置。
(付記2)
前記パッド電極構造は、アルミニウム又はアルミニウム合金の最表面を有し、前記最表面は針当てによって形成された傷を有する付記1記載の半導体装置。
(付記3)
前記導電性パッド保護膜は、前記傷表面を覆う付記2記載の半導体装置。
(付記4)
前記導電性パッド保護膜は、前記アルミニウム又はアルミニウム合金の最表面に接するTi膜を含む付記3記載の半導体装置。
(付記5)
前記導電性パッド保護膜は、前記Pd膜と前記Ti膜の間に、TiN膜またはTi−Al−N膜を含む付記4記載の半導体装置。
(付記6)
前記導電性パッド保護膜と同一の膜で形成され、前記強誘電体キャパシタ上方で、前記導電性パッド保護膜とは電気的に分離された状態で前記パッシベーション膜上に延在する導電性キャパシタ保護膜をさらに有する付記1〜5のいずれか1項記載の半導体装置。
(付記7)
半導体基板と、
前記半導体基板に形成された複数の半導体素子を含む回路部と、
前記回路部を覆って、前記半導体基板上に形成され、最上層に開口を有するパッシベーション膜を含む、絶縁積層と、
前記絶縁積層中に形成された強誘電体キャパシタと、
前記絶縁積層中に形成され、前記半導体素子、前記強誘電体キャパシタに接続された配線構造と、
前記配線構造に接続されて前記絶縁積層中に形成され、前記パッシベーション膜の開口において露出されたパッド電極構造と、
Pd膜を含み、前記パッシベーション膜の開口を介して前記パッド電極構造を覆い、前記パッシベーション膜上に延在する導電性パッド保護膜と、
前記導電性パッド保護膜と同一の膜で形成され、前記導電性パッド保護膜とは電気的に分離された状態で、前記強誘電体キャパシタ上方を含んで前記パッシベーション膜上に延在する導電性キャパシタ保護膜と、
を有する半導体装置。
(付記8)
前記導電性キャパシタ保護膜は、前記導電性パッド保護膜とスリットによって分離されている付記7記載の半導体装置。
(付記9)
前記パッド電極構造は、アルミニウム又はアルミニウム合金の最表面を有し、前記最表面は針当てによって形成された傷を有する付記7または8記載の半導体装置。
(付記10)
前記導電性パッド保護膜は、前記傷表面を覆う付記9記載の半導体装置。
(付記11)
前記導電性パッド保護膜は、前記アルミニウム又はアルミニウム合金の最表面に接するTi膜を含む付記10記載の半導体装置。
(付記12)
前記導電性パッド保護膜は、前記Pd膜と前記Ti膜の間に、TiN膜またはTi−Al−N膜を含む付記11記載の半導体装置。
(付記13)
前記導電性パッド保護膜上に形成されたメッキバンプをさらに有する付記7記載の半導体装置。
(付記14)
前記メッキバンプは金で形成されている付記13記載の半導体装置。
(付記15)
前記パッド電極構造は、アルミニウム又はアルミニウム合金の最表面を有し、前記最表面は針当てによって形成された傷を有する付記13または14記載の半導体装置。
(付記16)
前記導電性パッド保護膜は、前記傷表面を覆う付記15記載の半導体装置。
(付記17)
前記導電性パッド保護膜は、前記アルミニウム又はアルミニウム合金の最表面に接するTi膜を含む付記16記載の半導体装置。
(付記18)
(あ)複数のチップ領域を含む半導体基板の各チップ領域に複数の半導体素子を形成する工程と、
(い)前記複数の半導体素子を覆って、前記半導体基板上に下部層間絶縁膜を形成する工程と、
(う)前記下部層間絶縁膜上に、強誘電体キャパシタを形成する工程と、
(え)前記強誘電体キャパシタを覆って、前記下部層間絶縁膜上に多層層間絶縁膜を形成する工程と、
(お)前記半導体素子および前記強誘電体キャパシタに接続され、前記下部層間絶縁膜および多層層間絶縁膜の中またはその表面に配置された配線構造を形成する工程と、
(か)前記多層層間絶縁膜の中およびその表面に配置され、前記配線構造に接続されたパッド電極構造を形成する工程と、
(き)前記パッド電極構造を露出する開口を有するパッシベーション膜を前記多層層間絶縁膜上に形成する工程と、
(く)前記パッド電極構造に針を当てて検査を行う工程と、
(け)Pd膜を含み、前記パッシベーション膜の開口を介して検査後の前記パッド電極構造を覆い、前記パッシベーション膜上に延在する導電性パッド保護膜を形成する工程と、
(こ)前記導電性パッド保護膜上に、ボンディングワイヤを接続する工程と、
を含む半導体装置の製造方法。
(付記19)
前記工程(け)が、
(けー1)Ti膜を形成する工程と、
(けー2)前記Ti膜上にPd膜を形成する工程と、
を含む付記18記載の半導体装置の製造方法。
(付記20)
(あ)複数のチップ領域を含む半導体基板の各チップ領域に複数の半導体素子を形成する工程と、
(い)前記複数の半導体素子を覆って、前記半導体基板上に下部層間絶縁膜を形成する工程と、
(う)前記下部層間絶縁膜上に、強誘電体キャパシタを形成する工程と、
(え)前記強誘電体キャパシタを覆って、前記下部層間絶縁膜上に多層層間絶縁膜を形成する工程と、
(お)前記半導体素子および前記強誘電体キャパシタに接続され、前記下部層間絶縁膜および多層層間絶縁膜の中またはその表面に配置された配線構造を形成する工程と、
(か)前記多層層間絶縁膜の中およびその表面に配置され、前記配線構造に接続されたパッド電極構造を形成する工程と、
(き)前記パッド電極構造を露出する開口を有するパッシベーション膜を前記多層層間絶縁膜上に形成する工程と、
(く)前記パッド電極構造に針を当てて検査を行う工程と、
(け)Pd膜を含み、前記パッシベーション膜の開口を介して検査後の前記パッド電極構造を覆う導電性パッド保護膜を、前記パッシベーション膜上に形成する工程と、
(こ)前記導電性パッド保護膜を、前記パッド電極それぞれを覆う部分と前記強誘電体キャパシタ上方を覆う部分に分割する工程、
を含む半導体装置の製造方法。
Claims (7)
- 半導体基板と、
前記半導体基板に形成された複数の半導体素子を含む回路部と、
前記回路部を覆って、前記半導体基板上に形成され、最上層に開口を有するパッシベーション膜を含む、絶縁積層と、
前記絶縁積層中に形成された強誘電体キャパシタと、
前記絶縁積層中に形成され、前記半導体素子、前記強誘電体キャパシタに接続された配線構造と、
前記配線構造に接続されて前記絶縁積層中に形成され、前記パッシベーション膜の開口において露出されたパッド電極構造と、
Pd膜を含み、前記パッシベーション膜の開口を介して前記パッド電極構造を覆い、前記パッシベーション膜上に延在する導電性パッド保護膜と、
前記導電性パッド保護膜と同一の膜で形成され、前記導電性パッド保護膜とは電気的に分離された状態で、前記強誘電体キャパシタ上方を含んで前記パッシベーション膜上に延在する導電性キャパシタ保護膜と、
を有する半導体装置。 - 前記パッド電極構造は、アルミニウム又はアルミニウム合金の最表面を有し、前記最表面は針当てによって形成された傷を有する請求項1記載の半導体装置。
- 前記導電性パッド保護膜は、前記アルミニウム又はアルミニウム合金の最表面に接するTi膜を含む請求項2記載の半導体装置。
- 前記導電性パッド保護膜は、前記Pd膜と前記Ti膜の間に、TiN膜またはTi−Al−N膜を含む請求項3記載の半導体装置。
- 前記導電性パッド保護膜上に形成されたメッキバンプをさらに有する請求項1記載の半導体装置。
- 前記メッキバンプは金で形成されている請求項5記載の半導体装置。
- (あ)複数のチップ領域を含む半導体基板の各チップ領域に複数の半導体素子を形成する工程と、
(い)前記複数の半導体素子を覆って、前記半導体基板上に下部層間絶縁膜を形成する工程と、
(う)前記下部層間絶縁膜上に、強誘電体キャパシタを形成する工程と、
(え)前記強誘電体キャパシタを覆って、前記下部層間絶縁膜上に多層層間絶縁膜を形成する工程と、
(お)前記半導体素子および前記強誘電体キャパシタに接続され、前記下部層間絶縁膜および多層層間絶縁膜の中またはその表面に配置された配線構造を形成する工程と、
(か)前記多層層間絶縁膜の中およびその表面に配置され、前記配線構造に接続されたパッド電極構造を形成する工程と、
(き)前記パッド電極構造を露出する開口を有するパッシベーション膜を前記多層層間絶縁膜上に形成する工程と、
(く)前記パッド電極構造に針を当てて検査を行う工程と、
(け)Pd膜を含み、前記パッシベーション膜の開口を介して検査後の前記パッド電極構造を覆う導電性パッド保護膜を、前記パッシベーション膜上に形成する工程と、
(こ)前記導電性パッド保護膜を、前記パッド電極それぞれを覆う部分と前記強誘電体キャパシタ上方を覆う部分に分割する工程、
を含む半導体装置の製造方法。
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JPH04102367A (ja) * | 1990-08-21 | 1992-04-03 | Seiko Epson Corp | 半導体装置、半導体メモリ及び半導体装置の製造方法 |
JPH0855850A (ja) * | 1994-03-11 | 1996-02-27 | Ramtron Internatl Corp | 硬質セラミック材料等を用いた不活性化方法及び構造 |
JPH0864634A (ja) * | 1994-08-23 | 1996-03-08 | Hitachi Ltd | 半導体装置およびその製造方法 |
JPH10247664A (ja) * | 1997-03-04 | 1998-09-14 | Hitachi Ltd | 半導体集積回路装置およびその製造方法 |
JP2003297869A (ja) * | 2002-04-05 | 2003-10-17 | Rohm Co Ltd | バンプ電極を備えている電子部品及びその製造方法 |
JP2005175204A (ja) * | 2003-12-11 | 2005-06-30 | Fujitsu Ltd | 半導体装置およびその製造方法 |
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JP4118029B2 (ja) | 2001-03-09 | 2008-07-16 | 富士通株式会社 | 半導体集積回路装置とその製造方法 |
JP2003270608A (ja) | 2002-03-15 | 2003-09-25 | Mecc Co Ltd | 液晶表示パネル検査装置 |
EP1517364B1 (en) * | 2002-06-21 | 2011-03-16 | Fujitsu Semiconductor Limited | Semiconductor device and its producing method |
US7741714B2 (en) * | 2004-11-02 | 2010-06-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Bond pad structure with stress-buffering layer capping interconnection metal layer |
JP5050384B2 (ja) * | 2006-03-31 | 2012-10-17 | 富士通セミコンダクター株式会社 | 半導体装置およびその製造方法 |
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Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS615562A (ja) * | 1984-06-20 | 1986-01-11 | Hitachi Ltd | 半導体装置 |
JPH04102367A (ja) * | 1990-08-21 | 1992-04-03 | Seiko Epson Corp | 半導体装置、半導体メモリ及び半導体装置の製造方法 |
JPH0855850A (ja) * | 1994-03-11 | 1996-02-27 | Ramtron Internatl Corp | 硬質セラミック材料等を用いた不活性化方法及び構造 |
JPH0864634A (ja) * | 1994-08-23 | 1996-03-08 | Hitachi Ltd | 半導体装置およびその製造方法 |
JPH10247664A (ja) * | 1997-03-04 | 1998-09-14 | Hitachi Ltd | 半導体集積回路装置およびその製造方法 |
JP2003297869A (ja) * | 2002-04-05 | 2003-10-17 | Rohm Co Ltd | バンプ電極を備えている電子部品及びその製造方法 |
JP2005175204A (ja) * | 2003-12-11 | 2005-06-30 | Fujitsu Ltd | 半導体装置およびその製造方法 |
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US20090008783A1 (en) | 2009-01-08 |
US20120056322A1 (en) | 2012-03-08 |
US20150054129A1 (en) | 2015-02-26 |
US8906705B2 (en) | 2014-12-09 |
US8076780B2 (en) | 2011-12-13 |
JPWO2007074529A1 (ja) | 2009-06-04 |
US9059033B2 (en) | 2015-06-16 |
WO2007074529A1 (ja) | 2007-07-05 |
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