JP2009239090A - パッドと半導体装置の製造方法 - Google Patents
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Abstract
【解決手段】開口面以外がパシベーション膜40、41で覆われたパッド37bにおいて、半導体装置に設けられた三角形状又は台形状の第1の金属膜37xと、第1の金属膜37x上であって、パッド37bの開口面の一部分に開口41aの側面と接するように形成された第2の金属膜37yとを備えたパッドとする。
【選択図】図16
Description
本実施形態では、パッドが形成される半導体装置としてFeRAMを例にして説明するが、本発明はFeRAMに限定されず、半導体装置としてDRAM、フラッシュメモリ、ロジック素子等を製造してもよい。
本実施形態では、第1実施形態で得られた半導体装置に対して行われる電気的試験について説明する。
図31〜図35は、本発明の第3実施形態に係る半導体装置の製造方法を工程順に示す断面図である。なお、これらの断面図は、第1実施形態で説明したパッド形成領域IIの拡大断面図に相当する。また、図31〜図35において、第1実施形態で説明したのと同じ要素には第1実施形態と同じ符号を付し、以下ではその説明を省略する。
次に、第1〜3実施形態に対する比較例について説明する。
半導体装置に設けられた三角形状又は台形状の第1の金属膜と、
前記第1の金属膜上であって、前記パッドの開口面の一部分に前記開口の側面と接するように形成された第2の金属膜と、
を備えたことを特徴とするパッド。
前記絶縁膜の上に、第1の金属膜と第2の金属膜とを積層してなる三角形状又は台形状のパッドを形成する工程と、
前記第2の金属膜をパターニングして、前記パッドの中央部分に前記第1の金属膜を露出させると共に、前記パッドの周縁部分に前記第2の金属膜を残す工程と、
前記パッドと前記絶縁膜の上にパシベーション膜を形成する工程と、
前記パシベーション膜をパターニングして、該パシベーション膜に前記第1の金属膜と前記第2の金属膜とが露出する開口を形成する工程と、
を有することを特徴とする半導体装置の製造方法。
前記第3の金属膜をパターニングすることにより、前記パッドの中央部分に前記第1の金属膜を露出させると共に、前記パッドの周縁部分に前記第3の金属膜を前記2の金属膜からはみ出るように残す工程を更に有することを特徴とする付記8に記載の半導体装置の製造方法。
Claims (5)
- 開口面以外がパシベーション膜で覆われたパッドにおいて、
半導体装置に設けられた三角形状又は台形状の第1の金属膜と、
前記第1の金属膜上であって、前記パッドの開口面の一部分に前記開口の側面と接するように形成された第2の金属膜と、
を備えたことを特徴とするパッド。 - 前記第2の金属膜は、前記第1の金属膜上において、前記三角形状の頂点部又は前記台形状の上辺部付近の一部分に形成されたことを特徴とする請求項1に記載のパッド。
- 前記第1の金属膜の上であって前記第2の金属膜の下に、第3の金属膜が前記第2の金属膜からはみ出して形成されたことを特徴とする請求項1又は請求項2に記載のパッド。
- 前記第2の金属膜は前記第1の金属膜よりも硬く、前記第3の金属膜は前記第2の金属膜よりも硬いことを特徴とする請求項3に記載のパッド。
- 半導体基板の上方に絶縁膜を形成する工程と、
前記絶縁膜の上に、第1の金属膜と第2の金属膜とを積層してなる三角形状又は台形状のパッドを形成する工程と、
前記第2の金属膜をパターニングして、前記パッドの中央部分に前記第1の金属膜を露出させると共に、前記パッドの周縁部分に前記第2の金属膜を残す工程と、
前記パッドと前記絶縁膜の上にパシベーション膜を形成する工程と、
前記パシベーション膜をパターニングして、該パシベーション膜に前記第1の金属膜と前記第2の金属膜とが露出する開口を形成する工程と、
を有することを特徴とする半導体装置の製造方法。
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Cited By (1)
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JP2014165219A (ja) * | 2013-02-21 | 2014-09-08 | Renesas Electronics Corp | 半導体装置の製造方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56132762U (ja) * | 1980-03-10 | 1981-10-08 | ||
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JPH10270512A (ja) * | 1997-03-24 | 1998-10-09 | Nec Kyushu Ltd | 半導体装置の製造方法 |
JPH10325844A (ja) * | 1997-05-23 | 1998-12-08 | Mitsubishi Electric Corp | 集積回路テスト用プローブパッド |
JP2008198819A (ja) * | 2007-02-14 | 2008-08-28 | Matsushita Electric Ind Co Ltd | 半導体装置及びその評価方法 |
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JPH10270512A (ja) * | 1997-03-24 | 1998-10-09 | Nec Kyushu Ltd | 半導体装置の製造方法 |
JPH10325844A (ja) * | 1997-05-23 | 1998-12-08 | Mitsubishi Electric Corp | 集積回路テスト用プローブパッド |
JP2008198819A (ja) * | 2007-02-14 | 2008-08-28 | Matsushita Electric Ind Co Ltd | 半導体装置及びその評価方法 |
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JP2014165219A (ja) * | 2013-02-21 | 2014-09-08 | Renesas Electronics Corp | 半導体装置の製造方法 |
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