JP5401817B2 - 半導体装置の製造方法及び半導体装置 - Google Patents
半導体装置の製造方法及び半導体装置 Download PDFInfo
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- JP5401817B2 JP5401817B2 JP2008078122A JP2008078122A JP5401817B2 JP 5401817 B2 JP5401817 B2 JP 5401817B2 JP 2008078122 A JP2008078122 A JP 2008078122A JP 2008078122 A JP2008078122 A JP 2008078122A JP 5401817 B2 JP5401817 B2 JP 5401817B2
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Description
図1は、本発明の第1実施例に係る半導体装置1000の構造を示す。図1Aは、半導体装置1000の平面図である。図1Bは、図1AのX−X´線に沿った断面図である。
ソースパワーを例えば2000W、バイアスパワーを例えば300W、反応圧力を例えば10mTorr、Ar流量を例えば90〜99sccm、エッチング速度を例えば500nm/min、ウエハ温度を例えば20〜250℃として設定する。なお、導電性パッド260及び第2導電膜270のエッチング速度を速めるために塩素ガスを例えば1〜10sccm添加することが望ましい。
以下、本発明の第2実施例に係る半導体装置について添付の図面を参照して具体的に説明する。
以下、本発明の第3実施例に係る半導体装置について添付の図面を参照して具体的に説明する。
以下、本発明の第4実施例に係る半導体装置4000の製造方法及び半導体装置4000について添付の図面を参照して具体的に説明する。第4実施例の半導体装置4000の製造方法及び半導体装置4000によれば、パッド電極801における密着膜324は第2導電膜400と同じ材料で形成されているため、水素吸蔵膜334との密着性を更に向上させることができる。そのため、半導体装置4000における強誘電体膜を有するキャパシタ510の信頼性を向上させることができる。
(付記1)
半導体基板の上方に電極間に挟まれた強誘電体膜を備えたキャパシタを形成する工程と、
前記半導体基板の上方に前記キャパシタの前記電極と電気的に接続されるパッド電極を形成する工程と、
前記半導体基板の上方に前記パッド電極を保護する保護膜を形成する工程と、
前記保護膜に前記パッド電極の少なくとも一部が露出する開口部を形成する工程と、
前記パッド電極の表面に測定端子を当てる工程と、
前記測定端子を当てた前記パッド電極の前記表面をエッチングする工程と、
前記保護膜と前記パッド電極の前記開口部を覆う水素吸蔵膜を形成する工程と、
を含むことを特徴とする半導体装置の製造方法。
(付記2)
前記パッド電極は、TiN膜からなる第1導電膜、前記開口部において窪み及び平坦部を有する導電性パッド、及び前記平坦部に形成されたTiN膜からなる第2導電膜が順次積層されて形成されることを特徴とする付記1に記載の半導体装置の製造方法。
(付記3)
前記パッド電極は、TiN膜からなる第1導電膜、第1導電性パッド、TiN膜からなる第2導電膜、第2導電性パッド及びTiN膜からなる第3導電膜が順次積層されて形成され、前記第2導電性パッド及び前記第2導電膜を露出する前記開口部において窪みを有することを特徴とする付記1に記載の半導体装置の製造方法。
(付記4)
前記水素吸蔵膜を形成する工程は、
Ti膜又はTiN膜を形成する工程と、
前記Ti膜又はTiN膜上にPd膜を形成する工程と、
を含むことを特徴とする付記1乃至付記3のいずれか1項に記載の半導体装置の製造方法。
(付記5)
前記強誘電体膜は、チタン酸ジルコン酸鉛からなることを特徴とする付記1乃至付記4のいずれか1項に記載の半導体装置の製造方法。
(付記6)
前記水素吸蔵膜上に、ボンディングワイヤ又はスタッドバンプを接続する工程と、を更に有することを特徴とする付記1乃至付記5のいずれか1項に記載の半導体装置の製造方法。
(付記7)
半導体基板の上方に形成され、電極と前記電極に挟まれた強誘電体膜を備えたキャパシタと、
前記キャパシタの前記電極と電気的に接続され、前記半導体基板の上方に形成され、表面に窪みを有するパッド電極と、
前記パッド電極の内、表面の窪み以外の部分を保護する保護膜と、
前記保護膜と前記パッド電極の前記窪みを覆う水素吸蔵膜と
を含むことを特徴とする半導体装置。
(付記8)
前記パッド電極は、TiN膜からなる第1導電膜、前記窪み及び平坦部を有する導電性パッド、及び前記平坦部に形成されたTiN膜からなる第2導電膜が順次積層されて形成されることを特徴とする付記7記載の半導体装置。
(付記9)
前記パッド電極は、TiN膜からなる第1導電膜、第1導電性パッド、TiN膜からなる第2導電膜、第2導電性パッド及びTiN膜からなる第3導電膜が順次積層されて形成され、前記第2導電性パッド及び前記第2導電膜を露出する前記窪みを有することを特徴とすることを特徴とする付記7記載の半導体装置。
(付記10)
前記パッド電極それぞれを覆う部分と前記キャパシタの上方を覆う部分に分割された水素吸蔵膜を更に含むことを特徴とする付記7乃至付記9のいずれか1項に記載の半導体装置。
(付記11)
前記導電膜は、前記Al膜又はAl合金の最表面に接するTi膜を含む付記7乃至付記10のいずれか1項に記載の半導体装置。
(付記12)
前記導電膜と同一の膜で形成され、前記キャパシタ上方で、前記導電性パッド保護膜とは電気的に分離された状態で前記保護膜上に延在する導電性キャパシタ保護膜をさらに有することを特徴とする付記7乃至付記11のいずれか1項に記載の半導体装置。
(付記13)
前記導電性パッド保護膜を介し、前記パッド電極構造に接続されたスタッドバンプまたはボンディングワイヤと、を更に有することを特徴とする付記7乃至付記12のいずれか1項に記載の半導体装置の製造方法。
110 下部電極
120 強誘電体膜
130 上部電極
140 第1層間絶縁膜
151 第1コンタクトプラグ
152 第1コンタクトプラグ
160 第1金属配線
170 第2層間絶縁膜
180 第2コンタクトプラグ
190 第2金属配線
200 第3層間絶縁膜
210 第3コンタクトプラグ
220 第3金属配線
230 第4層間絶縁膜
240 第4コンタクトプラグ
250 第1導電膜
251 TiN膜
260 導電性パッド
261 Al合金膜
270 第2導電膜
271 TiN膜
280 第1保護膜
290 第2保護膜
300 第3保護膜
310、311、312、313、314,315 開口部
320、324 密着膜
321、322 Ti膜
323 TiN膜
330、334 水素吸蔵膜
331、332 水素吸蔵膜
333 Pd膜
340 ボンディングワイヤ
341 スタッドバンプ
350、351、352、353 レジスト
360 測定端子
380 第1導電膜
381 TiN膜
390 第1導電性パッド
391 Al合金膜
400 第2導電膜
401 TiN膜
410 第2導電性パッド
411 Al合金膜
420 第3導電膜
421 TiN膜
500 強誘電体メモリ(FRAM)回路部
510 強誘電体膜を有するキャパシタ
600 LOGIC回路部
700 周辺回路部
800、801 パッド電極
1000、2000、3000、4000 半導体装置
Claims (10)
- 半導体基板の上方に電極間に挟まれた強誘電体膜を備えたキャパシタを形成する工程と、
前記半導体基板の上方に前記キャパシタの前記電極と電気的に接続されるパッド電極を形成する工程と、
前記半導体基板の上方に前記パッド電極を保護する保護膜を形成する工程と、
前記保護膜に前記パッド電極の少なくとも一部が露出する開口部を形成する工程と、
前記開口部の前記パッド電極の表面に測定端子を当てる工程と、
前記測定端子を当てた前記パッド電極の前記表面及び前記開口部の前記保護膜をエッチングして、前記パッド電極に窪みを形成する工程と、
前記エッチングにより形成された前記保護膜の側面と前記窪みを覆う水素吸蔵膜を形成する工程と、
を含み、
前記窪みの表面には角がなく、前記保護膜の前記側面と前記窪みの前記表面は連続的に繋がり、角のない連続面を構成することを特徴とする半導体装置の製造方法。 - 前記パッド電極は、TiN膜からなる第1導電膜、前記開口部において前記窪み及び平坦部を有する導電性パッド、及び前記平坦部に形成されたTiN膜からなる第2導電膜が順次積層されて形成されることを特徴とする請求項1に記載の半導体装置の製造方法。
- 前記パッド電極は、TiN膜からなる第1導電膜、第1導電性パッド、TiN膜からなる第2導電膜、第2導電性パッド及びTiN膜からなる第3導電膜が順次積層されて形成され、前記第2導電性パッド及び前記第2導電膜を露出する前記開口部において前記窪みを有することを特徴とする請求項1に記載の半導体装置の製造方法。
- 前記水素吸蔵膜を形成する工程は、
Ti膜又はTiN膜を形成する工程と、
前記Ti膜又はTiN膜上にPd膜を形成する工程と、
を含むことを特徴とする請求項1乃至請求項3のいずれか1項に記載の半導体装置の製造方法。 - 前記強誘電体膜は、チタン酸ジルコン酸鉛からなることを特徴とする請求項1乃至請求項4のいずれか1項に記載の半導体装置の製造方法。
- 半導体基板の上方に形成され、電極と前記電極に挟まれた強誘電体膜を備えたキャパシタと、
前記キャパシタの前記電極と電気的に接続され、前記半導体基板の上方に形成され、表面に窪みを有するパッド電極と、
前記パッド電極の内、表面の窪み以外の部分を保護し、前記窪みを露出する開口部を有する保護膜と、
前記開口部の前記保護膜の側面と前記窪みを覆う水素吸蔵膜と
を含み、
前記窪みの表面には角がなく、
前記保護膜の前記側面と前記窪みの前記表面は連続的に繋がり、角のない連続面を構成することを特徴とする半導体装置。 - 前記パッド電極は、TiN膜からなる第1導電膜、前記窪み及び平坦部を有する導電性パッド、及び前記平坦部に形成されたTiN膜からなる第2導電膜が順次積層されて形成されることを特徴とする請求項6に記載の半導体装置。
- 前記パッド電極は、TiN膜からなる第1導電膜、第1導電性パッド、TiN膜からなる第2導電膜、第2導電性パッド及びTiN膜からなる第3導電膜が順次積層されて形成され、前記第2導電性パッド及び前記第2導電膜を露出する前記窪みを有することを特徴とする請求項6に記載の半導体装置。
- 前記パッド電極それぞれを覆う部分と前記キャパシタの上方を覆う部分に分割された水素吸蔵膜を更に含むことを特徴とする請求項6乃至請求項8のいずれか1項に記載の半導体装置。
- 前記パッド電極と前記水素吸蔵膜との間にあって前記窪みを覆うTi膜を更に有することを特徴とする請求項6乃至請求項8のいずれか1項に記載の半導体装置。
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US10586909B2 (en) | 2016-10-11 | 2020-03-10 | Massachusetts Institute Of Technology | Cryogenic electronic packages and assemblies |
US10867944B2 (en) * | 2019-03-27 | 2020-12-15 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor structure and manufacturing method thereof |
US10879138B1 (en) * | 2019-06-14 | 2020-12-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor packaging structure including interconnection to probe pad with probe mark and method of manufacturing the same |
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