JP5136052B2 - 半導体装置及びその製造方法 - Google Patents
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Description
次に、本発明の第1の実施形態について説明する。但し、ここでは、便宜上、半導体装置の断面構造については、その製造方法と共に説明する。図2A乃至図2Uは、本発明の第1の実施形態に係る強誘電体メモリ(半導体装置)の製造方法を工程順に示す断面図である。
次いで、アルゴン及び酸素雰囲気にて、例えば600℃〜800℃、10秒間〜100秒間の熱処理を行う。この結果、強誘電体膜38を構成する強誘電体材料が完全に結晶化すると共に、強誘電体膜38とIrOX膜40aとの界面が平滑(フラット)になる。次いで、例えばスパッタ法又はMOCVD法により、例えば膜厚が150nm〜250nmのIrOY膜40bを形成する。この際、工程劣化を抑えるために、IrOY膜40bの酸素の組成比Yが、IrOX膜40aの酸素の組成比Xより高くなるようにする。IrOX膜40a及びIrOY膜40bから強誘電体キャパシタの上部電極膜40が構成される。
Stress)試験(JEDEC規格等)においても、良好な試験結果を得ることができる。
次に、本発明の第2の実施形態について説明する。但し、ここでも、便宜上、半導体装置の断面構造については、その製造方法と共に説明する。図5A乃至図5Cは、本発明の第2の実施形態に係る強誘電体メモリ(半導体装置)の製造方法を工程順に示す断面図である。
次に、本発明の第3の実施形態について説明する。図7は、本発明の第3の実施形態に係る強誘電体メモリ(半導体装置)を示す断面図である。
次に、本発明の第4の実施形態について説明する。図8は、本発明の第4の実施形態に係る強誘電体メモリ(半導体装置)を示す断面図である。
次に、本発明の第5の実施形態について説明する。図9は、本発明の第5の実施形態に係る強誘電体メモリ(半導体装置)を示す断面図である。
次に、本発明の第6の実施形態について説明する。図10は、本発明の第6の実施形態に係る強誘電体メモリ(半導体装置)を示す断面図である。
次に、本発明の第7の実施形態について説明する。図11は、本発明の第7の実施形態に係る強誘電体メモリ(半導体装置)を示す断面図である。
次に、本発明の第8の実施形態について説明する。第1〜第7の実施形態では、強誘電体キャパシタ42の構造がプレーナ型とされているが、第8の実施形態には、構造がスタック型の強誘電体キャパシタが設けられている。以下、第8の実施形態について詳細に説明するが、便宜上、その断面構造については、その製造方法と共に説明する。図12A乃至図12Dは、本発明の第8の実施形態に係る強誘電体メモリ(半導体装置)の製造方法を工程順に示す断面図である。
次に、本発明の第9の実施形態について説明する。図13は、本発明の第9の実施形態に係る強誘電体メモリ(半導体装置)を示す断面図である。
Claims (8)
- 半導体基板の上方に形成された強誘電体キャパシタと、
前記強誘電体キャパシタを覆うバリア膜と、
を有する半導体装置であって、
前記バリア膜は積層体であって、下層がアルミニウム酸化膜であり、上層がチタン酸化膜であることを特徴とする半導体装置。 - 前記強誘電体キャパシタが、
下部電極と、
前記下部電極上に形成された強誘電体膜と、
前記強誘電体膜上に形成された上部電極と、
を有し、
前記積層体のうち、
前記下層が、少なくとも前記強誘電体キャパシタの前記強誘電体膜の側面を覆い、
前記上層が、前記強誘電体キャパシタの全面を覆うことを特徴とする請求項1に記載の半導体装置。 - 半導体基板の上方に形成された強誘電体キャパシタと、
前記強誘電体キャパシタの上方に形成された層間絶縁膜と、
前記層間絶縁膜より上方の平坦化された面上に形成されたバリア膜と、
を有する半導体装置であって、
前記バリア膜は積層体であって、下層がアルミニウム酸化膜であり、上層がチタン酸化膜であることを特徴とする半導体装置。 - 半導体基板の上方に形成された強誘電体キャパシタと、
前記強誘電体キャパシタに接続された第1の配線と、
前記第1の配線より上方の平坦化された面上に形成されたバリア膜と、
を有する半導体装置であって、
前記バリア膜は積層体であって、下層がアルミニウム酸化膜であり、上層がチタン酸化膜であることを特徴とする半導体装置。 - 前記バリア膜は、前記第1の配線を直接覆う前記積層体であることを特徴とする請求項4に記載の半導体装置。
- 前記第1の配線及び前記バリア膜の上方に形成された第2の配線を有することを特徴とする請求項4に記載の半導体装置。
- 半導体基板の上方に強誘電体キャパシタを形成する工程と、
前記強誘電体キャパシタを直接覆う第1のバリア膜を形成する工程と、
前記強誘電体キャパシタの上方に層間絶縁膜を形成する工程と、
前記層間絶縁膜より上方の平坦化された面上に第2のバリア膜を形成する工程と、
前記強誘電体キャパシタに接続される配線を形成する工程と、
前記配線より上方の平坦化された面上に第3のバリア膜を形成する工程と、
を有し、
前記第1のバリア膜、前記第2のバリア膜及び前記第3のバリア膜の少なくとも一つは積層体であって、
前記積層体は、アルミニウム酸化膜と、前記アルミニウム酸化膜より上方に形成されたチタン酸化膜と、からなることを特徴とする半導体装置の製造方法。 - 前記強誘電体キャパシタを形成する工程は、
下部電極膜を形成する工程と、
前記下部電極膜の上面に強誘電体膜を形成する工程と、
前記強誘電体膜の上面に上部電極膜を形成する工程と、
前記上部電極膜をパターニングして上部電極を形成する工程と、
前記上部電極の形成後に、前記下部電極膜上で前記強誘電体膜をパターニングする工程と、
前記強誘電体膜のパターニング後に、少なくとも前記強誘電体膜を覆う前記アルミニウム酸化膜を形成する工程と、
前記アルミニウム酸化膜及び前記下部電極膜をパターニングして下部電極を形成する工程と、
を有し、
前記下部電極の形成後に、前記強誘電体キャパシタの全体を覆う前記チタン酸化膜を形成する工程を有することを特徴とする請求項7に記載の半導体装置の製造方法。
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PCT/JP2005/010188 WO2006129366A1 (ja) | 2005-06-02 | 2005-06-02 | 半導体装置及びその製造方法 |
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JP5136052B2 true JP5136052B2 (ja) | 2013-02-06 |
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EP (2) | EP2267758B1 (ja) |
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WO2007063573A1 (ja) * | 2005-11-29 | 2007-06-07 | Fujitsu Limited | 半導体装置とその製造方法 |
JP4821516B2 (ja) * | 2006-08-31 | 2011-11-24 | 旭光電機株式会社 | 多関節構造体 |
JP5163641B2 (ja) * | 2007-02-27 | 2013-03-13 | 富士通セミコンダクター株式会社 | 半導体記憶装置、半導体記憶装置の製造方法、およびパッケージ樹脂形成方法 |
US20080237540A1 (en) * | 2007-03-19 | 2008-10-02 | Nanosys, Inc. | Methods for encapsulating nanocrystals |
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JP2009099676A (ja) * | 2007-10-15 | 2009-05-07 | Fujitsu Ltd | 半導体装置とその製造方法 |
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EP2267758A3 (en) | 2011-03-02 |
CN101189721B (zh) | 2015-04-01 |
US8441101B2 (en) | 2013-05-14 |
WO2006129366A1 (ja) | 2006-12-07 |
US20080073685A1 (en) | 2008-03-27 |
JPWO2006129366A1 (ja) | 2008-12-25 |
US20120220057A1 (en) | 2012-08-30 |
EP2267758B1 (en) | 2015-09-09 |
EP1887624A1 (en) | 2008-02-13 |
EP1887624A4 (en) | 2010-07-28 |
US20110210424A1 (en) | 2011-09-01 |
EP2267758A2 (en) | 2010-12-29 |
CN101189721A (zh) | 2008-05-28 |
US8852961B2 (en) | 2014-10-07 |
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