CN106409809B - 一种带有电容器的半导体器件 - Google Patents
一种带有电容器的半导体器件 Download PDFInfo
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- CN106409809B CN106409809B CN201611054501.3A CN201611054501A CN106409809B CN 106409809 B CN106409809 B CN 106409809B CN 201611054501 A CN201611054501 A CN 201611054501A CN 106409809 B CN106409809 B CN 106409809B
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- capacitor
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- semiconductor devices
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- mim capacitor
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- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
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Abstract
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201611054501.3A CN106409809B (zh) | 2016-11-25 | 2016-11-25 | 一种带有电容器的半导体器件 |
Applications Claiming Priority (1)
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CN201611054501.3A CN106409809B (zh) | 2016-11-25 | 2016-11-25 | 一种带有电容器的半导体器件 |
Publications (2)
Publication Number | Publication Date |
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CN106409809A CN106409809A (zh) | 2017-02-15 |
CN106409809B true CN106409809B (zh) | 2019-04-26 |
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CN201611054501.3A Expired - Fee Related CN106409809B (zh) | 2016-11-25 | 2016-11-25 | 一种带有电容器的半导体器件 |
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Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104425442A (zh) * | 2013-09-09 | 2015-03-18 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件及其制造方法 |
CN104425440A (zh) * | 2013-08-27 | 2015-03-18 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件及其形成方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7268383B2 (en) * | 2003-02-20 | 2007-09-11 | Infineon Technologies Ag | Capacitor and method of manufacturing a capacitor |
KR100640065B1 (ko) * | 2005-03-02 | 2006-10-31 | 삼성전자주식회사 | 그라운드 실드층을 포함하는 mim 커패시터 |
KR100699863B1 (ko) * | 2005-08-29 | 2007-03-27 | 삼성전자주식회사 | 크로스토크를 방지할 수 있는 cmos 이미지 센서 및 그제조방법 |
CN105514093B (zh) * | 2016-01-22 | 2018-09-18 | 天津大学 | 基于硅通孔技术的半导体电容器及其制造方法、封装结构 |
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2016
- 2016-11-25 CN CN201611054501.3A patent/CN106409809B/zh not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN104425440A (zh) * | 2013-08-27 | 2015-03-18 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件及其形成方法 |
CN104425442A (zh) * | 2013-09-09 | 2015-03-18 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件及其制造方法 |
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Publication number | Publication date |
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CN106409809A (zh) | 2017-02-15 |
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Legal Events
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C06 | Publication | ||
PB01 | Publication | ||
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TA01 | Transfer of patent application right |
Effective date of registration: 20190401 Address after: 312500 Chenjiawu No. 27, Fangquan Village, Xiaojiang Town, Xinchang County, Shaoxing City, Zhejiang Province (Residence Declaration) Applicant after: Xinchang Fengtian Intelligent Technology Co., Ltd. Address before: 226300 window of science and technology, No. 266, New Century Avenue, Nantong hi tech Zone, Nantong, Jiangsu Applicant before: Nantong Voight Optoelectronics Technology Co., Ltd. |
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GR01 | Patent grant | ||
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CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20190426 Termination date: 20201125 |
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CF01 | Termination of patent right due to non-payment of annual fee |