CN106409809A - 一种带有电容器的半导体器件 - Google Patents
一种带有电容器的半导体器件 Download PDFInfo
- Publication number
- CN106409809A CN106409809A CN201611054501.3A CN201611054501A CN106409809A CN 106409809 A CN106409809 A CN 106409809A CN 201611054501 A CN201611054501 A CN 201611054501A CN 106409809 A CN106409809 A CN 106409809A
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- CN
- China
- Prior art keywords
- capacitor
- semiconductor devices
- layer
- screen layer
- capacitor according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
- H01L23/5225—Shielding layers formed together with wiring layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
- H01L23/5223—Capacitor integral with wiring layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201611054501.3A CN106409809B (zh) | 2016-11-25 | 2016-11-25 | 一种带有电容器的半导体器件 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201611054501.3A CN106409809B (zh) | 2016-11-25 | 2016-11-25 | 一种带有电容器的半导体器件 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN106409809A true CN106409809A (zh) | 2017-02-15 |
CN106409809B CN106409809B (zh) | 2019-04-26 |
Family
ID=58081753
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201611054501.3A Expired - Fee Related CN106409809B (zh) | 2016-11-25 | 2016-11-25 | 一种带有电容器的半导体器件 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN106409809B (zh) |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1751367A (zh) * | 2003-02-20 | 2006-03-22 | 因芬尼昂技术股份公司 | 电容器及制造电容器的方法 |
US20060197133A1 (en) * | 2005-03-02 | 2006-09-07 | Samsung Electronics Co., Ltd. | MIM capacitor including ground shield layer |
US20070045665A1 (en) * | 2005-08-29 | 2007-03-01 | Byung-Jun Park | CMOS image sensor of preventing optical crosstalk and method of manufacturing the same |
CN104425442A (zh) * | 2013-09-09 | 2015-03-18 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件及其制造方法 |
CN104425440A (zh) * | 2013-08-27 | 2015-03-18 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件及其形成方法 |
CN105514093A (zh) * | 2016-01-22 | 2016-04-20 | 天津大学 | 基于硅通孔技术的半导体电容器及其制造方法、封装结构 |
-
2016
- 2016-11-25 CN CN201611054501.3A patent/CN106409809B/zh not_active Expired - Fee Related
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1751367A (zh) * | 2003-02-20 | 2006-03-22 | 因芬尼昂技术股份公司 | 电容器及制造电容器的方法 |
US20060197133A1 (en) * | 2005-03-02 | 2006-09-07 | Samsung Electronics Co., Ltd. | MIM capacitor including ground shield layer |
US20070045665A1 (en) * | 2005-08-29 | 2007-03-01 | Byung-Jun Park | CMOS image sensor of preventing optical crosstalk and method of manufacturing the same |
CN104425440A (zh) * | 2013-08-27 | 2015-03-18 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件及其形成方法 |
CN104425442A (zh) * | 2013-09-09 | 2015-03-18 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件及其制造方法 |
CN105514093A (zh) * | 2016-01-22 | 2016-04-20 | 天津大学 | 基于硅通孔技术的半导体电容器及其制造方法、封装结构 |
Also Published As
Publication number | Publication date |
---|---|
CN106409809B (zh) | 2019-04-26 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20190401 Address after: 312500 Chenjiawu No. 27, Fangquan Village, Xiaojiang Town, Xinchang County, Shaoxing City, Zhejiang Province (Residence Declaration) Applicant after: Xinchang Fengtian Intelligent Technology Co., Ltd. Address before: 226300 window of science and technology, No. 266, New Century Avenue, Nantong hi tech Zone, Nantong, Jiangsu Applicant before: Nantong Voight Optoelectronics Technology Co., Ltd. |
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TA01 | Transfer of patent application right | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20190426 Termination date: 20201125 |
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CF01 | Termination of patent right due to non-payment of annual fee |