ATE326768T1 - Verfahren zur herstellung von einem gatter- dielektrikum mit veränderlicher dielektrizitätskonstante - Google Patents

Verfahren zur herstellung von einem gatter- dielektrikum mit veränderlicher dielektrizitätskonstante

Info

Publication number
ATE326768T1
ATE326768T1 AT02368011T AT02368011T ATE326768T1 AT E326768 T1 ATE326768 T1 AT E326768T1 AT 02368011 T AT02368011 T AT 02368011T AT 02368011 T AT02368011 T AT 02368011T AT E326768 T1 ATE326768 T1 AT E326768T1
Authority
AT
Austria
Prior art keywords
dielectric layer
variable
producing
low
gate dielectric
Prior art date
Application number
AT02368011T
Other languages
English (en)
Inventor
Lap Chan
Elgin Quek
Ravi Sundaresan
Yang Pan
Meng Lee James Yong
Leung Ying Keung
Pradeep Ramachandramurthy
Zheng Jia Zhen
Original Assignee
Chartered Semiconductor Mfg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Chartered Semiconductor Mfg filed Critical Chartered Semiconductor Mfg
Application granted granted Critical
Publication of ATE326768T1 publication Critical patent/ATE326768T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
    • H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
    • H01L21/28194—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation by deposition, e.g. evaporation, ALD, CVD, sputtering, laser deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
    • H01L29/42376—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the length or the sectional shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
    • H01L29/512—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures the variation being parallel to the channel plane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/517—Insulating materials associated therewith the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
    • H01L29/66583—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with initial gate mask or masking layer complementary to the prospective gate location, e.g. with dummy source and drain contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/518—Insulating materials associated therewith the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Formation Of Insulating Films (AREA)
AT02368011T 2001-01-26 2002-01-25 Verfahren zur herstellung von einem gatter- dielektrikum mit veränderlicher dielektrizitätskonstante ATE326768T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/769,811 US6436774B1 (en) 2001-01-26 2001-01-26 Method for forming variable-K gate dielectric

Publications (1)

Publication Number Publication Date
ATE326768T1 true ATE326768T1 (de) 2006-06-15

Family

ID=25086569

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02368011T ATE326768T1 (de) 2001-01-26 2002-01-25 Verfahren zur herstellung von einem gatter- dielektrikum mit veränderlicher dielektrizitätskonstante

Country Status (7)

Country Link
US (2) US6436774B1 (de)
EP (1) EP1227513B1 (de)
JP (1) JP4255235B2 (de)
AT (1) ATE326768T1 (de)
DE (1) DE60211396T2 (de)
SG (2) SG108291A1 (de)
TW (1) TW510013B (de)

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JP2001291861A (ja) * 2000-04-05 2001-10-19 Nec Corp Ｍｏｓトランジスタ、トランジスタ製造方法
US6586791B1 (en) * 2000-07-19 2003-07-01 3M Innovative Properties Company Transistor insulator layer incorporating superfine ceramic particles
FR2849531A1 (fr) 2002-12-27 2004-07-02 St Microelectronics Sa Procede de formation d'une region localisee d'un materiau difficilement gravable
US20050045961A1 (en) * 2003-08-29 2005-03-03 Barnak John P. Enhanced gate structure
US6885072B1 (en) * 2003-11-18 2005-04-26 Applied Intellectual Properties Co., Ltd. Nonvolatile memory with undercut trapping structure
KR100561998B1 (ko) * 2003-12-31 2006-03-22 동부아남반도체 주식회사 이미지 센서의 제조방법
US20050259467A1 (en) * 2004-05-18 2005-11-24 Micron Technology, Inc. Split gate flash memory cell with ballistic injection
US7196935B2 (en) * 2004-05-18 2007-03-27 Micron Technolnology, Inc. Ballistic injection NROM flash memory
US20060043462A1 (en) * 2004-08-27 2006-03-02 Micron Technology, Inc. Stepped gate configuration for non-volatile memory
DE102004044667A1 (de) * 2004-09-15 2006-03-16 Infineon Technologies Ag Halbleiterbauelement sowie zugehöriges Herstellungsverfahren
DE102005051417A1 (de) * 2005-10-27 2007-05-03 X-Fab Semiconductor Foundries Ag Simulations- bzw. Layoutverfahren für vertikale Leistungstransistoren mit variierbarer Kanalweite und variierbarer Gate-Drain-Kapazität
KR100707678B1 (ko) * 2005-12-29 2007-04-13 동부일렉트로닉스 주식회사 반도체 소자의 게이트 구조 및 그 제조 방법
DE102006035667B4 (de) * 2006-07-31 2010-10-21 Advanced Micro Devices, Inc., Sunnyvale Verfahren zum Verbessern der Lithographieeigenschaften während der Gateherstellung in Halbleitern mit einer ausgeprägten Oberflächentopographie
US8420460B2 (en) * 2008-03-26 2013-04-16 International Business Machines Corporation Method, structure and design structure for customizing history effects of SOI circuits
US8410554B2 (en) 2008-03-26 2013-04-02 International Business Machines Corporation Method, structure and design structure for customizing history effects of SOI circuits
JP4548521B2 (ja) 2008-07-09 2010-09-22 ソニー株式会社 半導体装置の製造方法及び半導体装置
US8629506B2 (en) * 2009-03-19 2014-01-14 International Business Machines Corporation Replacement gate CMOS
JP5616665B2 (ja) * 2010-03-30 2014-10-29 ローム株式会社 半導体装置
US9515164B2 (en) 2014-03-06 2016-12-06 International Business Machines Corporation Methods and structure to form high K metal gate stack with single work-function metal
CN105655254B (zh) * 2014-11-13 2019-05-28 中芯国际集成电路制造(上海)有限公司 晶体管的形成方法
US9515158B1 (en) * 2015-10-20 2016-12-06 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structure with insertion layer and method for manufacturing the same
EP3179514B1 (de) * 2015-12-11 2024-01-24 IMEC vzw Transistorvorrichtung mit einer reduzierten injektionswirkung von heissen ladungsträgern
US20180138307A1 (en) * 2016-11-17 2018-05-17 Globalfoundries Inc. Tunnel finfet with self-aligned gate
US10276679B2 (en) * 2017-05-30 2019-04-30 Vanguard International Semiconductor Corporation Semiconductor device and method for manufacturing the same
US11469307B2 (en) 2020-09-29 2022-10-11 Taiwan Semiconductor Manufacturing Company, Ltd. Thicker corner of a gate dielectric structure around a recessed gate electrode for an MV device

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US4196507A (en) 1978-08-25 1980-04-08 Rca Corporation Method of fabricating MNOS transistors having implanted channels
US5324683A (en) * 1993-06-02 1994-06-28 Motorola, Inc. Method of forming a semiconductor structure having an air region
US5688704A (en) * 1995-11-30 1997-11-18 Lucent Technologies Inc. Integrated circuit fabrication
US5677217A (en) 1996-08-01 1997-10-14 Vanguard International Semiconductor Corporation Method for fabricating a mosfet device, with local channel doping and a titanium silicide gate
US5920103A (en) 1997-06-20 1999-07-06 Advanced Micro Devices, Inc. Asymmetrical transistor having a gate dielectric which is substantially resistant to hot carrier injection
US5960270A (en) * 1997-08-11 1999-09-28 Motorola, Inc. Method for forming an MOS transistor having a metallic gate electrode that is formed after the formation of self-aligned source and drain regions
KR100236098B1 (ko) 1997-09-06 1999-12-15 김영환 반도체소자 및 그 제조방법
US6140691A (en) * 1997-12-19 2000-10-31 Advanced Micro Devices, Inc. Trench isolation structure having a low K dielectric material isolated from a silicon-based substrate
US6008109A (en) * 1997-12-19 1999-12-28 Advanced Micro Devices, Inc. Trench isolation structure having a low K dielectric encapsulated by oxide
US6087208A (en) * 1998-03-31 2000-07-11 Advanced Micro Devices, Inc. Method for increasing gate capacitance by using both high and low dielectric gate material
US20010020723A1 (en) * 1998-07-07 2001-09-13 Mark I. Gardner Transistor having a transition metal oxide gate dielectric and method of making same
JP4237332B2 (ja) * 1999-04-30 2009-03-11 株式会社東芝 半導体装置の製造方法
US6297106B1 (en) * 1999-05-07 2001-10-02 Chartered Semiconductor Manufacturing Ltd. Transistors with low overlap capacitance

Also Published As

Publication number Publication date
JP2002270835A (ja) 2002-09-20
EP1227513A3 (de) 2003-08-06
US20020173106A1 (en) 2002-11-21
DE60211396T2 (de) 2007-05-03
EP1227513A2 (de) 2002-07-31
DE60211396D1 (de) 2006-06-22
TW510013B (en) 2002-11-11
SG108291A1 (en) 2005-01-28
SG137692A1 (en) 2007-12-28
EP1227513B1 (de) 2006-05-17
JP4255235B2 (ja) 2009-04-15
US20020100947A1 (en) 2002-08-01
US6709934B2 (en) 2004-03-23
US6436774B1 (en) 2002-08-20

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