JP4628004B2 - 薄膜トランジスタの作製方法 - Google Patents

薄膜トランジスタの作製方法 Download PDF

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Publication number
JP4628004B2
JP4628004B2 JP2004092093A JP2004092093A JP4628004B2 JP 4628004 B2 JP4628004 B2 JP 4628004B2 JP 2004092093 A JP2004092093 A JP 2004092093A JP 2004092093 A JP2004092093 A JP 2004092093A JP 4628004 B2 JP4628004 B2 JP 4628004B2
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Japan
Prior art keywords
layer
electrode layer
gate electrode
recess
insulating layer
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Expired - Fee Related
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JP2004092093A
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Japanese (ja)
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JP2005277323A5 (enExample
JP2005277323A (ja
Inventor
達也 本田
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2004092093A priority Critical patent/JP4628004B2/ja
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Publication of JP2005277323A5 publication Critical patent/JP2005277323A5/ja
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  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2004092093A 2004-03-26 2004-03-26 薄膜トランジスタの作製方法 Expired - Fee Related JP4628004B2 (ja)

Priority Applications (1)

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JP2004092093A JP4628004B2 (ja) 2004-03-26 2004-03-26 薄膜トランジスタの作製方法

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JP2004092093A JP4628004B2 (ja) 2004-03-26 2004-03-26 薄膜トランジスタの作製方法

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JP2005277323A JP2005277323A (ja) 2005-10-06
JP2005277323A5 JP2005277323A5 (enExample) 2007-05-17
JP4628004B2 true JP4628004B2 (ja) 2011-02-09

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JP2004092093A Expired - Fee Related JP4628004B2 (ja) 2004-03-26 2004-03-26 薄膜トランジスタの作製方法

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Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI517378B (zh) 2005-10-17 2016-01-11 半導體能源研究所股份有限公司 半導體裝置及其製造方法
JP2007220360A (ja) * 2006-02-14 2007-08-30 Tokyo Electron Ltd 発光素子、発光素子の製造方法および基板処理装置
JP5371144B2 (ja) * 2007-06-29 2013-12-18 株式会社半導体エネルギー研究所 半導体装置及び半導体装置の作製方法、並びに電子機器
TWI500159B (zh) 2008-07-31 2015-09-11 Semiconductor Energy Lab 半導體裝置和其製造方法
US8106400B2 (en) * 2008-10-24 2012-01-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR101432764B1 (ko) * 2008-11-13 2014-08-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치의 제조방법
KR102556313B1 (ko) * 2008-11-21 2023-07-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
KR101752640B1 (ko) 2009-03-27 2017-06-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치
KR102221207B1 (ko) 2009-09-04 2021-03-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치 및 발광 장치를 제작하기 위한 방법
KR102142835B1 (ko) * 2009-10-09 2020-08-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011046048A1 (en) 2009-10-16 2011-04-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
CN102576734B (zh) * 2009-10-21 2015-04-22 株式会社半导体能源研究所 显示装置和包括显示装置的电子设备
KR102481935B1 (ko) 2009-11-06 2022-12-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
JP5683125B2 (ja) * 2010-03-24 2015-03-11 莉立 范 電極の敷設方法とその構造
CN103762167A (zh) * 2011-12-31 2014-04-30 广东中显科技有限公司 一种搭桥晶粒多晶硅薄膜晶体管及其制造方法
JP6536634B2 (ja) * 2017-07-28 2019-07-03 セイコーエプソン株式会社 電気光学装置および電子機器

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100206877B1 (ko) * 1995-12-28 1999-07-01 구본준 박막트랜지스터 제조방법
JP2003249658A (ja) * 2002-02-26 2003-09-05 Seiko Epson Corp 有機半導体装置

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JP2005277323A (ja) 2005-10-06

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