JP2008171871A5 - - Google Patents

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Publication number
JP2008171871A5
JP2008171871A5 JP2007001303A JP2007001303A JP2008171871A5 JP 2008171871 A5 JP2008171871 A5 JP 2008171871A5 JP 2007001303 A JP2007001303 A JP 2007001303A JP 2007001303 A JP2007001303 A JP 2007001303A JP 2008171871 A5 JP2008171871 A5 JP 2008171871A5
Authority
JP
Japan
Prior art keywords
semiconductor layer
optical sensor
electrode
sensor element
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2007001303A
Other languages
English (en)
Japanese (ja)
Other versions
JP2008171871A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2007001303A priority Critical patent/JP2008171871A/ja
Priority claimed from JP2007001303A external-priority patent/JP2008171871A/ja
Priority to TW096141507A priority patent/TW200836333A/zh
Priority to US12/000,402 priority patent/US8097927B2/en
Priority to KR1020070134297A priority patent/KR20080065535A/ko
Priority to EP07024987A priority patent/EP1944806A3/en
Priority to CN2007101597397A priority patent/CN101221994B/zh
Publication of JP2008171871A publication Critical patent/JP2008171871A/ja
Publication of JP2008171871A5 publication Critical patent/JP2008171871A5/ja
Pending legal-status Critical Current

Links

JP2007001303A 2007-01-09 2007-01-09 高感度光センサ素子及びそれを用いた光センサ装置 Pending JP2008171871A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2007001303A JP2008171871A (ja) 2007-01-09 2007-01-09 高感度光センサ素子及びそれを用いた光センサ装置
TW096141507A TW200836333A (en) 2007-01-09 2007-11-02 Highly sensitive photo-sensing element and photo-sensing device using the same
US12/000,402 US8097927B2 (en) 2007-01-09 2007-12-12 Highly sensitive photo-sensing element and photo-sensing device using the same
KR1020070134297A KR20080065535A (ko) 2007-01-09 2007-12-20 고감도 광 센서 소자 및 그를 이용한 광 센서 장치
EP07024987A EP1944806A3 (en) 2007-01-09 2007-12-21 Highly sensitive photo-sensing element and photo-sensing device using the same
CN2007101597397A CN101221994B (zh) 2007-01-09 2007-12-21 高灵敏度光传感元件和使用该元件的光传感装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007001303A JP2008171871A (ja) 2007-01-09 2007-01-09 高感度光センサ素子及びそれを用いた光センサ装置

Publications (2)

Publication Number Publication Date
JP2008171871A JP2008171871A (ja) 2008-07-24
JP2008171871A5 true JP2008171871A5 (enExample) 2009-10-08

Family

ID=39325514

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007001303A Pending JP2008171871A (ja) 2007-01-09 2007-01-09 高感度光センサ素子及びそれを用いた光センサ装置

Country Status (6)

Country Link
US (1) US8097927B2 (enExample)
EP (1) EP1944806A3 (enExample)
JP (1) JP2008171871A (enExample)
KR (1) KR20080065535A (enExample)
CN (1) CN101221994B (enExample)
TW (1) TW200836333A (enExample)

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TW200825563A (en) * 2006-12-11 2008-06-16 Innolux Display Corp Light supply device and liquid crystal display device using the same
US8030655B2 (en) 2007-12-03 2011-10-04 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor, display device having thin film transistor
JP5527966B2 (ja) * 2007-12-28 2014-06-25 株式会社半導体エネルギー研究所 薄膜トランジスタ
EP2151811A3 (en) * 2008-08-08 2010-07-21 Semiconductor Energy Laboratory Co, Ltd. Display device and electronic device
US7965329B2 (en) * 2008-09-09 2011-06-21 Omnivision Technologies, Inc. High gain read circuit for 3D integrated pixel
WO2010038419A1 (ja) * 2008-09-30 2010-04-08 シャープ株式会社 半導体装置およびその製造方法ならびに表示装置
US8460954B2 (en) 2008-10-27 2013-06-11 Sharp Kabushiki Kaisha Semiconductor device, method for manufacturing same, and display device
US8415678B2 (en) 2009-05-21 2013-04-09 Sharp Kabushiki Kaisha Semiconductor device and display device
WO2010150573A1 (ja) * 2009-06-25 2010-12-29 シャープ株式会社 表示装置
JP5222240B2 (ja) * 2009-07-09 2013-06-26 株式会社ジャパンディスプレイイースト 光センサ回路、および光センサアレイ
KR101641618B1 (ko) 2009-08-05 2016-07-22 삼성디스플레이 주식회사 가시광 차단 부재, 가시광 차단 부재를 포함하는 적외선 센서 및 적외선 센서를 포함하는 액정 표시 장치
KR101610846B1 (ko) 2009-09-08 2016-04-11 삼성디스플레이 주식회사 표시 장치 및 그 제조 방법
CN105789321B (zh) * 2010-03-26 2019-08-20 株式会社半导体能源研究所 半导体装置的制造方法
US8686480B2 (en) 2010-04-16 2014-04-01 Sharp Kabushiki Kaisha Semiconductor device and method for manufacturing same
JP5669439B2 (ja) * 2010-05-21 2015-02-12 株式会社半導体エネルギー研究所 半導体基板の作製方法
KR101735587B1 (ko) 2010-09-06 2017-05-25 삼성디스플레이 주식회사 포토 센서, 포토 센서 제조 방법 및 표시 장치
WO2013018625A1 (ja) * 2011-07-29 2013-02-07 シャープ株式会社 表示装置
CN102693988B (zh) * 2012-05-29 2014-12-31 上海丽恒光微电子科技有限公司 光电二极管阵列及其形成方法
CN102790069B (zh) * 2012-07-26 2014-09-10 北京京东方光电科技有限公司 一种传感器及其制造方法
CN102790063B (zh) * 2012-07-26 2017-10-17 北京京东方光电科技有限公司 一种传感器及其制造方法
US9766754B2 (en) 2013-08-27 2017-09-19 Samsung Display Co., Ltd. Optical sensing array embedded in a display and method for operating the array
US9401383B2 (en) * 2014-03-13 2016-07-26 Karim Sallaudin Karim Photoconductive element for radiation detection in a radiography imaging system
JP6171997B2 (ja) * 2014-03-14 2017-08-02 ソニー株式会社 固体撮像素子およびその駆動方法、並びに電子機器
CN103956340A (zh) * 2014-05-08 2014-07-30 中国科学院半导体研究所 采用后端cmos工艺三维光电集成的方法
CN105487724B (zh) * 2014-09-19 2020-05-05 三星显示有限公司 显示装置、其操作方法及制造其中的光学感测阵列的方法
EP3009921B1 (en) * 2014-10-16 2019-05-22 Samsung Display Co., Ltd. Display comprising an optical sensing array and method for operating the same
CN105093259B (zh) * 2015-08-14 2018-12-18 京东方科技集团股份有限公司 射线探测器
CN109727974B (zh) * 2019-01-03 2021-10-08 京东方科技集团股份有限公司 感光组件、其制备方法以及感光基板
CN109655877B (zh) * 2019-01-04 2020-12-01 京东方科技集团股份有限公司 平板探测器的像素结构、平板探测器及摄像系统
US11393866B2 (en) 2019-09-30 2022-07-19 Taiwan Semiconductor Manufacturing Company, Ltd. Method for forming an image sensor
WO2023230751A1 (zh) * 2022-05-30 2023-12-07 京东方科技集团股份有限公司 射线探测器及制备方法、电子设备

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US670184A (en) * 1900-06-09 1901-03-19 Walter B Morrison Radiant-heat bath.
JP2603285B2 (ja) * 1988-02-26 1997-04-23 日本電信電話株式会社 光導電型イメージセンサの製造方法
JPH022168A (ja) * 1988-06-15 1990-01-08 Sony Corp ラインセンサ
AU2001245916A1 (en) 2000-03-22 2001-10-03 Aegis Semiconductor A semitransparent optical detector with a transparent conductor and method of making
JP4709442B2 (ja) 2001-08-28 2011-06-22 株式会社 日立ディスプレイズ 薄膜トランジスタの製造方法
GB0219771D0 (en) 2002-08-24 2002-10-02 Koninkl Philips Electronics Nv Manufacture of electronic devices comprising thin-film circuit elements
JP4737956B2 (ja) 2003-08-25 2011-08-03 東芝モバイルディスプレイ株式会社 表示装置および光電変換素子
US7495272B2 (en) * 2003-10-06 2009-02-24 Semiconductor Energy Labortaory Co., Ltd. Semiconductor device having photo sensor element and amplifier circuit
KR20070003784A (ko) * 2003-12-15 2007-01-05 코닌클리케 필립스 일렉트로닉스 엔.브이. 광센서를 가지는 능동 매트릭스 픽셀 디바이스
JP4045446B2 (ja) 2004-02-12 2008-02-13 カシオ計算機株式会社 トランジスタアレイ及び画像処理装置
WO2005104234A1 (ja) * 2004-04-19 2005-11-03 Hitachi, Ltd. 撮影機能一体型表示装置
JP2006330322A (ja) * 2005-05-26 2006-12-07 Toshiba Matsushita Display Technology Co Ltd 液晶表示装置

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