JP2003347522A5 - - Google Patents

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Publication number
JP2003347522A5
JP2003347522A5 JP2002151301A JP2002151301A JP2003347522A5 JP 2003347522 A5 JP2003347522 A5 JP 2003347522A5 JP 2002151301 A JP2002151301 A JP 2002151301A JP 2002151301 A JP2002151301 A JP 2002151301A JP 2003347522 A5 JP2003347522 A5 JP 2003347522A5
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JP
Japan
Prior art keywords
semiconductor
semiconductor substrate
crystal orientation
layer
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002151301A
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English (en)
Japanese (ja)
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JP2003347522A (ja
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Publication date
Application filed filed Critical
Priority to JP2002151301A priority Critical patent/JP2003347522A/ja
Priority claimed from JP2002151301A external-priority patent/JP2003347522A/ja
Publication of JP2003347522A publication Critical patent/JP2003347522A/ja
Publication of JP2003347522A5 publication Critical patent/JP2003347522A5/ja
Pending legal-status Critical Current

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JP2002151301A 2002-05-24 2002-05-24 半導体装置およびその製造方法 Pending JP2003347522A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002151301A JP2003347522A (ja) 2002-05-24 2002-05-24 半導体装置およびその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002151301A JP2003347522A (ja) 2002-05-24 2002-05-24 半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
JP2003347522A JP2003347522A (ja) 2003-12-05
JP2003347522A5 true JP2003347522A5 (enExample) 2005-09-29

Family

ID=29768933

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002151301A Pending JP2003347522A (ja) 2002-05-24 2002-05-24 半導体装置およびその製造方法

Country Status (1)

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JP (1) JP2003347522A (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2856192B1 (fr) * 2003-06-11 2005-07-29 Soitec Silicon On Insulator Procede de realisation de structure heterogene et structure obtenue par un tel procede
JP2007012897A (ja) * 2005-06-30 2007-01-18 Nec Electronics Corp 半導体装置およびその製造方法
JP4648134B2 (ja) * 2005-09-02 2011-03-09 大日本印刷株式会社 Ｓｏｉ基板、荷電粒子線露光用マスクブランクスおよび荷電粒子線露光用マスク
JP5107539B2 (ja) * 2006-08-03 2012-12-26 新光電気工業株式会社 半導体装置および半導体装置の製造方法
JP4888276B2 (ja) * 2007-08-09 2012-02-29 三菱電機株式会社 半導体ウエハ装置
JP5665599B2 (ja) 2011-02-24 2015-02-04 株式会社東芝 半導体装置および半導体装置の製造方法
FR2985369B1 (fr) * 2011-12-29 2014-01-10 Commissariat Energie Atomique Procede de fabrication d'une structure multicouche sur un support
US9331153B2 (en) * 2013-12-13 2016-05-03 Raytheon Company Methods and structures for forming microstrip transmission lines on thin silicon on insulator (SOI) wafers
JP6617718B2 (ja) * 2014-12-10 2019-12-11 株式会社ニコン 基板重ね合わせ装置および基板処理方法

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