JP2003347522A - 半導体装置およびその製造方法 - Google Patents
半導体装置およびその製造方法Info
- Publication number
- JP2003347522A JP2003347522A JP2002151301A JP2002151301A JP2003347522A JP 2003347522 A JP2003347522 A JP 2003347522A JP 2002151301 A JP2002151301 A JP 2002151301A JP 2002151301 A JP2002151301 A JP 2002151301A JP 2003347522 A JP2003347522 A JP 2003347522A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- semiconductor
- semiconductor substrate
- soi
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 243
- 238000004519 manufacturing process Methods 0.000 title abstract description 45
- 239000000758 substrate Substances 0.000 claims abstract description 331
- 239000013078 crystal Substances 0.000 claims abstract description 35
- 238000000034 method Methods 0.000 claims description 39
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 21
- 229910052760 oxygen Inorganic materials 0.000 claims description 21
- 239000001301 oxygen Substances 0.000 claims description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 17
- 229910052814 silicon oxide Inorganic materials 0.000 abstract description 17
- 239000010410 layer Substances 0.000 description 58
- 239000010408 film Substances 0.000 description 37
- 235000012431 wafers Nutrition 0.000 description 37
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 30
- 229910052710 silicon Inorganic materials 0.000 description 30
- 239000010703 silicon Substances 0.000 description 30
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 20
- 230000000694 effects Effects 0.000 description 14
- 238000010438 heat treatment Methods 0.000 description 14
- 239000011229 interlayer Substances 0.000 description 12
- 238000000137 annealing Methods 0.000 description 6
- 230000007547 defect Effects 0.000 description 6
- 238000002955 isolation Methods 0.000 description 5
- 238000005498 polishing Methods 0.000 description 5
- 229910052796 boron Inorganic materials 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000001556 precipitation Methods 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 230000001629 suppression Effects 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 239000002244 precipitate Substances 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 1
- 101000592773 Halobacterium salinarum (strain ATCC 700922 / JCM 11081 / NRC-1) 50S ribosomal protein L22 Proteins 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- IVHJCRXBQPGLOV-UHFFFAOYSA-N azanylidynetungsten Chemical compound [W]#N IVHJCRXBQPGLOV-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Landscapes
- Thin Film Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002151301A JP2003347522A (ja) | 2002-05-24 | 2002-05-24 | 半導体装置およびその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002151301A JP2003347522A (ja) | 2002-05-24 | 2002-05-24 | 半導体装置およびその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2003347522A true JP2003347522A (ja) | 2003-12-05 |
| JP2003347522A5 JP2003347522A5 (enExample) | 2005-09-29 |
Family
ID=29768933
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002151301A Pending JP2003347522A (ja) | 2002-05-24 | 2002-05-24 | 半導体装置およびその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2003347522A (enExample) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005005708A (ja) * | 2003-06-11 | 2005-01-06 | Soi Tec Silicon On Insulator Technologies | 異質構造の製造方法 |
| JP2007012897A (ja) * | 2005-06-30 | 2007-01-18 | Nec Electronics Corp | 半導体装置およびその製造方法 |
| JP2007067329A (ja) * | 2005-09-02 | 2007-03-15 | Dainippon Printing Co Ltd | Ｓｏｉ基板、荷電粒子線露光用マスクブランクスおよび荷電粒子線露光用マスク |
| JP2008041837A (ja) * | 2006-08-03 | 2008-02-21 | Shinko Electric Ind Co Ltd | 半導体装置および半導体装置の製造方法 |
| JP2009040639A (ja) * | 2007-08-09 | 2009-02-26 | Mitsubishi Electric Corp | 半導体ウエハ装置 |
| JP2012175049A (ja) * | 2011-02-24 | 2012-09-10 | Toshiba Corp | 半導体装置および半導体装置の製造方法 |
| JP2015510256A (ja) * | 2011-12-29 | 2015-04-02 | コミサリア ア エナジー アトミック エ オックス エナジーズ オルタネティヴ | 多層構造体を基板に製造する方法 |
| JP2017510055A (ja) * | 2013-12-13 | 2017-04-06 | レイセオン カンパニー | 薄いシリコンオン絶縁体（ｓｏｉ）ウェハー上にマイクロストリップ伝送ラインを形成するための方法及び構造体 |
| JP2022088667A (ja) * | 2014-12-10 | 2022-06-14 | 株式会社ニコン | 基板重ね合わせ装置および基板処理方法 |
-
2002
- 2002-05-24 JP JP2002151301A patent/JP2003347522A/ja active Pending
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005005708A (ja) * | 2003-06-11 | 2005-01-06 | Soi Tec Silicon On Insulator Technologies | 異質構造の製造方法 |
| JP2007012897A (ja) * | 2005-06-30 | 2007-01-18 | Nec Electronics Corp | 半導体装置およびその製造方法 |
| JP2007067329A (ja) * | 2005-09-02 | 2007-03-15 | Dainippon Printing Co Ltd | Ｓｏｉ基板、荷電粒子線露光用マスクブランクスおよび荷電粒子線露光用マスク |
| JP2008041837A (ja) * | 2006-08-03 | 2008-02-21 | Shinko Electric Ind Co Ltd | 半導体装置および半導体装置の製造方法 |
| JP2009040639A (ja) * | 2007-08-09 | 2009-02-26 | Mitsubishi Electric Corp | 半導体ウエハ装置 |
| JP2012175049A (ja) * | 2011-02-24 | 2012-09-10 | Toshiba Corp | 半導体装置および半導体装置の製造方法 |
| US8980671B2 (en) | 2011-02-24 | 2015-03-17 | Kabushiki Kaisha Toshiba | Semiconductor device and manufacturing method of semiconductor device |
| JP2015510256A (ja) * | 2011-12-29 | 2015-04-02 | コミサリア ア エナジー アトミック エ オックス エナジーズ オルタネティヴ | 多層構造体を基板に製造する方法 |
| JP2017510055A (ja) * | 2013-12-13 | 2017-04-06 | レイセオン カンパニー | 薄いシリコンオン絶縁体（ｓｏｉ）ウェハー上にマイクロストリップ伝送ラインを形成するための方法及び構造体 |
| JP2022088667A (ja) * | 2014-12-10 | 2022-06-14 | 株式会社ニコン | 基板重ね合わせ装置および基板処理方法 |
| JP7494875B2 (ja) | 2014-12-10 | 2024-06-04 | 株式会社ニコン | 基板重ね合わせ装置および基板処理方法 |
| US12100667B2 (en) | 2014-12-10 | 2024-09-24 | Nikon Corporation | Apparatus for stacking substrates and method for the same |
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