JP7494875B2 - 基板重ね合わせ装置および基板処理方法 - Google Patents
基板重ね合わせ装置および基板処理方法 Download PDFInfo
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- JP7494875B2 JP7494875B2 JP2022064241A JP2022064241A JP7494875B2 JP 7494875 B2 JP7494875 B2 JP 7494875B2 JP 2022064241 A JP2022064241 A JP 2022064241A JP 2022064241 A JP2022064241 A JP 2022064241A JP 7494875 B2 JP7494875 B2 JP 7494875B2
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Description
特許文献1 特開2013-098186号公報
Claims (9)
- 結晶方位を有する複数の基板を露光し、前記基板に構造物を形成する露光装置と、
前記構造物が形成された複数の基板のうち2つの基板の間の一部を接触させた後、前記接触した領域を拡大させ、前記2つの基板を積層して積層基板を製造する積層装置と、
積層された前記2つの基板における構造物の間の位置ずれを計測する計測部と、を備え、
前記積層装置は、前記2つの基板における構造物の間の位置ずれを抑制するように、前記2つの基板の間で、前記結晶方位を互いに異ならせて重ね合わせ、
前記露光装置は、前記2つの基板とは異なる基板を露光する際に、前記計測部の計測結果に基づいて制御される基板処理システム。 - 前記計測結果に基づいて、前記露光装置が前記2つの基板とは異なる基板を露光するために用いる補正量を算出する請求項1に記載の基板処理システム。
- 前記位置ずれは、前記2つの基板間で接合波が進行することにより生じ、かつ前記接触した領域の拡大方向に応じた前記2つの基板の間の不均一な変形量の違いに起因する前記2つの基板における構造物の間の位置ずれを含む請求項1または2に記載の基板処理システム。
- 前記位置ずれは、前記2つの基板の少なくとも一方に生じる変形により生じる位置ずれを含む請求項2または3に記載の基板処理システム。
- 前記露光装置は、前記計測結果に基づいて、前記2つの基板の少なくとも一方において、露光する構造物の位置が面内の方向によって異なるよう制御される請求項1から4のいずれか1項に記載の基板処理システム。
- 前記露光装置は、前記計測結果に基づいて、前記2つの基板の少なくとも一方において、中心から周縁部に向けて、露光される構造物間の間隔が大きくなるように制御される請求項1から5のいずれか1項に記載の基板処理システム。
- 前記露光装置は、前記計測結果に基づいて、前記2つの基板の少なくとも一方において、一つのショット内の複数のチップ間の間隔および形状の少なくとも一方を変化させて露光することにより構造物を形成するように制御される請求項1から6のいずれか1項に記載の基板処理システム。
- 前記露光装置は、前記計測結果に基づいて、前記2つの基板の少なくとも一方の弾性率を部分的に変化させる構造物を形成するように制御される請求項1から7のいずれか1項に記載の基板処理システム。
- 結晶方位を有する複数の基板を露光し、前記基板に構造物を形成する段階と、
前記構造物が形成された複数の基板のうち2つの基板の間の一部を接触させた後、前記接触した領域を拡大させ、前記2つの基板を積層して積層基板を製造する段階と、
積層された前記2つの基板における構造物の間の位置ずれを計測する段階と
を備え、
前記積層基板を製造する段階は、前記2つの基板における構造物の間の位置ずれを抑制するように、前記2つの基板の間で、前記結晶方位を互いに異ならせて重ね合わせ、
前記基板に構造物を形成する段階は、前記2つの基板とは異なる基板を露光する際に、前記計測する段階の計測結果に基づいて制御される基板処理方法。
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