JP6617718B2 - 基板重ね合わせ装置および基板処理方法 - Google Patents
基板重ね合わせ装置および基板処理方法 Download PDFInfo
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Description
特許文献1 特開2013−098186号公報
Claims (24)
- 第1の構造物を有して第1保持部に保持された第1基板と第2の構造物を有して第2保持部に保持された第2基板とが接触する接触領域を、前記第1基板および前記第2基板の一部に形成した後、前記第1保持部による前記第1基板の前記保持を解除することによって、前記接触領域を前記一部から広げて前記第1基板と前記第2基板とを互いに重ね合わせる基板重ね合わせ装置であって、
前記接触領域が広がるときに、少なくとも前記第1基板の複数の方向に生じる変形量が異なり、
前記変形量の違いによる前記第1の構造物および前記第2の構造物の間の位置ずれを抑制する抑制部を備える基板重ね合わせ装置。 - 前記抑制部は、前記位置ずれの量が所定の値以下になるように前記位置ずれを抑制する請求項1に記載の基板重ね合わせ装置。
- 前記抑制部は、前記第1基板の前記位置ずれが生じる前記方向に応じて前記第2基板を変形させる請求項1または2に記載の基板重ね合わせ装置。
- 前記抑制部は、前記第2保持部に設けられ、前記第2基板を保持する保持面の複数の部分の高さ位置を調節する調節部を有する請求項3に記載の基板重ね合わせ装置。
- 前記調節部は、前記保持面に沿って配置され、前記第2基板の厚さ方向に変位する複数のアクチュエータを有し、前記複数のアクチュエータは、前記位置ずれの量に関連した変位量で駆動する請求項4に記載の基板重ね合わせ装置。
- 前記抑制部は、少なくとも前記第2保持部に設けられ、それぞれが前記位置ずれの量に関連した高さ位置を有する複数の部分を有し前記第2基板を保持する保持面を有する請求項3に記載の基板重ね合わせ装置。
- 少なくとも前記第2保持部は、前記第2基板を保持した状態で搬送される基板ホルダであり、前記保持面は、前記基板ホルダの前記第2基板を保持する面である請求項6に記載の基板重ね合わせ装置。
- 前記抑制部は、前記第1基板の前記変形量が他の前記方向よりも大きい前記方向に対応する領域の前記第2基板への接触の進行を制御する請求項1から7のいずれか一項に記載の基板重ね合わせ装置。
- 少なくとも前記第1保持部は、前記第1基板を吸着する複数の吸着領域を有し、
前記抑制部は、前記第1基板および前記第2基板の重ね合わせ時に、前記第1基板および前記第2基板の接触の進行度合いに応じて前記複数の吸着領域への前記第1基板の吸着を前記一部から順次開放する請求項8に記載の基板重ね合わせ装置。 - 前記抑制部は、前記第1基板および前記第2基板が一部において接触した後に、前記第1基板および前記第2基板が接触していない領域において、前記第1基板および前記第2基板の少なくとも一方を他方の基板に向けて前記位置ずれの量に関連した加圧力で加圧する加圧部を有する請求項8に記載の基板重ね合わせ装置。
- 前記加圧部は、前記第1基板および前記第2基板の少なくとも一方の一部に向かって流体を噴射する噴射部を含む請求項10に記載の基板重ね合わせ装置。
- 前記抑制部は、前記第1基板および前記第2基板の周囲の圧力を前記第1基板の前記変形量の分布に応じて調整する気圧調整部を有する請求項1から11のいずれか一項に記載の基板重ね合わせ装置。
- 前記抑制部は、前記第1基板の前記変形量が最も小さい前記方向における前記変形量を基準として前記位置ずれを抑制する請求項1から12のいずれか一項に記載の基板重ね合わせ装置。
- 第1の構造物を有して第1保持部に保持された第1基板と第2の構造物を有して第2保持部に保持された第2基板とが接触する接触領域を、前記第1基板および前記第2基板の一部に形成した後、前記第1保持部による前記第1基板の前記保持を解除することによって、前記接触領域を前記一部から広げて前記第1基板と前記第2基板とを互いに重ね合わせる基板処理方法であって、
前記接触領域が広がるときに、少なくとも前記第1基板の複数の方向に生じる変形量が異なり、
前記変形量の違いによる前記第1の構造物および前記第2の構造物の間の位置ずれを抑制する抑制段階を含む基板処理方法。 - 前記抑制段階は、前記位置ずれの量が所定の値以下になるように前記位置ずれを抑制する請求項14に記載の基板処理方法。
- 前記抑制段階は、前記第1基板の前記位置ずれが生じている前記方向に対応させて前記第2基板を変形させる請求項14または15に記載の基板処理方法。
- 前記抑制段階は、少なくとも前記第2基板において、前記第1基板の変形後の回路の位置に対応する位置に回路を形成する段階を含む請求項14に記載の基板処理方法。
- 前記抑制段階は、前記第1基板の前記変形量に応じた間隔で前記回路を繰り返し露光する段階を含む請求項17に記載の基板処理方法。
- 前記抑制段階は、前記第1基板の弾性率を部分的に変化させる構造物を少なくとも前記第1基板に形成する段階を含む請求項14から18のいずれか一項に記載の基板処理方法。
- 前記構造物を前記第1基板のスクライブライン上に形成する請求項19に記載の基板処理方法。
- 前記抑制段階は、
前互いに対応する前記方向の前記変形量の差が所定の値以下である前記第1基板および前記第2基板を選択する段階と、
前記第1基板および前記第2基板の重ね合わせ時に、第1の保持部への前記第1基板の保持および第2の保持部への前記第2基板の保持をそれぞれ開放する段階と、
を有する請求項14から20のいずれか一項に記載の基板処理方法。 - 前記第1基板および前記第2基板のそれぞれの接合面を活性化させる活性化段階を有し、
前記抑制段階は、前記活性化段階において、前記第1基板の前記変形量に応じて前記第1基板および前記第2基板の少なくとも一方の活性化度合を調整する請求項14から21のいずれか一項に記載の基板処理方法。 - 互いに重ね合される二つの基板のうち、前記二つの基板をそれぞれ保持する保持部に保持されていない状態での歪量および反り量の少なくとも一方が相対的に小さい方の基板を前記第1基板とする段階を含む請求項14から22のいずれか一項に記載の基板処理方法。
- 互いに重ね合される二つの基板のうち前記変形量の差が小さい方の基板を前記第1基板とする段階を含む請求項14から23のいずれか一項に記載の基板処理方法。
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