JP2008532260A5 - - Google Patents

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Publication number
JP2008532260A5
JP2008532260A5 JP2007552129A JP2007552129A JP2008532260A5 JP 2008532260 A5 JP2008532260 A5 JP 2008532260A5 JP 2007552129 A JP2007552129 A JP 2007552129A JP 2007552129 A JP2007552129 A JP 2007552129A JP 2008532260 A5 JP2008532260 A5 JP 2008532260A5
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JP
Japan
Prior art keywords
insulating layer
forming
nitrogen content
forming step
nanocrystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2007552129A
Other languages
English (en)
Japanese (ja)
Other versions
JP2008532260A (ja
JP4980931B2 (ja
Filing date
Publication date
Priority claimed from US11/043,826 external-priority patent/US7361567B2/en
Application filed filed Critical
Publication of JP2008532260A publication Critical patent/JP2008532260A/ja
Publication of JP2008532260A5 publication Critical patent/JP2008532260A5/ja
Application granted granted Critical
Publication of JP4980931B2 publication Critical patent/JP4980931B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2007552129A 2005-01-26 2005-12-14 不揮発性ナノ結晶メモリ及びその方法 Expired - Fee Related JP4980931B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/043,826 2005-01-26
US11/043,826 US7361567B2 (en) 2005-01-26 2005-01-26 Non-volatile nanocrystal memory and method therefor
PCT/US2005/045207 WO2006080999A2 (en) 2005-01-26 2005-12-14 Non-volatile nanocrystal memory and method therefor

Publications (3)

Publication Number Publication Date
JP2008532260A JP2008532260A (ja) 2008-08-14
JP2008532260A5 true JP2008532260A5 (enExample) 2009-02-19
JP4980931B2 JP4980931B2 (ja) 2012-07-18

Family

ID=36697390

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007552129A Expired - Fee Related JP4980931B2 (ja) 2005-01-26 2005-12-14 不揮発性ナノ結晶メモリ及びその方法

Country Status (9)

Country Link
US (1) US7361567B2 (enExample)
EP (1) EP1844492B1 (enExample)
JP (1) JP4980931B2 (enExample)
KR (1) KR101219067B1 (enExample)
CN (1) CN101438392A (enExample)
AT (1) ATE473515T1 (enExample)
DE (1) DE602005022229D1 (enExample)
TW (1) TWI407492B (enExample)
WO (1) WO2006080999A2 (enExample)

Families Citing this family (25)

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Publication number Priority date Publication date Assignee Title
KR100673205B1 (ko) * 2004-11-24 2007-01-22 주식회사 하이닉스반도체 플래쉬 메모리소자의 제조방법
US20060166435A1 (en) * 2005-01-21 2006-07-27 Teo Lee W Synthesis of GE nanocrystal memory cell and using a block layer to control oxidation kinetics
US7338894B2 (en) * 2005-01-26 2008-03-04 Freescale Semiconductor, Inc. Semiconductor device having nitridated oxide layer and method therefor
JP2007036025A (ja) * 2005-07-28 2007-02-08 Nec Electronics Corp 不揮発性メモリ半導体装置およびその製造方法
US7525149B2 (en) * 2005-08-24 2009-04-28 Micron Technology, Inc. Combined volatile and non-volatile memory device with graded composition insulator stack
TWI289336B (en) * 2005-11-07 2007-11-01 Ind Tech Res Inst Nanocrystal memory component, manufacturing method thereof and memory comprising the same
US7767588B2 (en) * 2006-02-28 2010-08-03 Freescale Semiconductor, Inc. Method for forming a deposited oxide layer
US7773493B2 (en) * 2006-09-29 2010-08-10 Intel Corporation Probe-based storage device
US8686490B2 (en) * 2006-12-20 2014-04-01 Sandisk Corporation Electron blocking layers for electronic devices
US20080150004A1 (en) * 2006-12-20 2008-06-26 Nanosys, Inc. Electron Blocking Layers for Electronic Devices
US7847341B2 (en) 2006-12-20 2010-12-07 Nanosys, Inc. Electron blocking layers for electronic devices
US20080150009A1 (en) * 2006-12-20 2008-06-26 Nanosys, Inc. Electron Blocking Layers for Electronic Devices
US7846793B2 (en) * 2007-10-03 2010-12-07 Applied Materials, Inc. Plasma surface treatment for SI and metal nanocrystal nucleation
US7871886B2 (en) 2008-12-19 2011-01-18 Freescale Semiconductor, Inc. Nanocrystal memory with differential energy bands and method of formation
US7799634B2 (en) * 2008-12-19 2010-09-21 Freescale Semiconductor, Inc. Method of forming nanocrystals
US8021970B2 (en) * 2009-03-20 2011-09-20 Freescale Semiconductor, Inc. Method of annealing a dielectric layer
JP6125846B2 (ja) * 2012-03-22 2017-05-10 株式会社日立国際電気 半導体装置の製造方法、基板処理方法、基板処理装置およびプログラム
CN102709315A (zh) * 2012-05-22 2012-10-03 上海华力微电子有限公司 一种具有锥形能带的be-sonos结构器件及形成方法
CN102709330B (zh) * 2012-05-22 2016-04-27 上海华力微电子有限公司 一种具有低操作电压的be-sonos结构器件及形成方法
US8994006B2 (en) * 2012-10-02 2015-03-31 International Business Machines Corporation Non-volatile memory device employing semiconductor nanoparticles
US8895397B1 (en) 2013-10-15 2014-11-25 Globalfoundries Singapore Pte. Ltd. Methods for forming thin film storage memory cells
US9171858B2 (en) 2013-12-30 2015-10-27 Globalfoundries Singapore Pte. Ltd. Multi-level memory cells and methods for forming multi-level memory cells
US9953841B2 (en) * 2015-05-08 2018-04-24 Macronix International Co., Ltd. Semiconductor device and method of fabricating the same
DE102020100099B4 (de) * 2019-09-30 2025-09-11 Taiwan Semiconductor Manufacturing Co., Ltd. Gatestrukturen in halbleitervorrichtungen und deren herstellung
US11756832B2 (en) * 2019-09-30 2023-09-12 Taiwan Semiconductor Manufacturing Company, Ltd. Gate structures in semiconductor devices

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6320784B1 (en) * 2000-03-14 2001-11-20 Motorola, Inc. Memory cell and method for programming thereof
US6297095B1 (en) * 2000-06-16 2001-10-02 Motorola, Inc. Memory device that includes passivated nanoclusters and method for manufacture
US6413819B1 (en) * 2000-06-16 2002-07-02 Motorola, Inc. Memory device and method for using prefabricated isolated storage elements
AU2001263370A1 (en) * 2000-06-16 2002-01-02 Motorola, Inc. Memory device including nanoclusters and method for manufacture
TW525263B (en) * 2000-09-28 2003-03-21 Chartered Semiconductor Mfg Formation of interfacial oxide layer at the Si3N4/Si interface by H2/O2 annealing
US6444545B1 (en) * 2000-12-19 2002-09-03 Motorola, Inc. Device structure for storing charge and method therefore
JP2002261175A (ja) * 2000-12-28 2002-09-13 Sony Corp 不揮発性半導体記憶装置およびその製造方法
JP2002231834A (ja) * 2001-02-02 2002-08-16 Ricoh Co Ltd 半導体記憶装置
US6713127B2 (en) * 2001-12-28 2004-03-30 Applied Materials, Inc. Methods for silicon oxide and oxynitride deposition using single wafer low pressure CVD
TW569377B (en) * 2002-03-20 2004-01-01 Taiwan Semiconductor Mfg Improvement method for thickness uniformity of super-thin nitridation gate dielectric
JP2004207613A (ja) * 2002-12-26 2004-07-22 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
US7338894B2 (en) * 2005-01-26 2008-03-04 Freescale Semiconductor, Inc. Semiconductor device having nitridated oxide layer and method therefor

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