JP2007123825A5 - - Google Patents

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Publication number
JP2007123825A5
JP2007123825A5 JP2006176863A JP2006176863A JP2007123825A5 JP 2007123825 A5 JP2007123825 A5 JP 2007123825A5 JP 2006176863 A JP2006176863 A JP 2006176863A JP 2006176863 A JP2006176863 A JP 2006176863A JP 2007123825 A5 JP2007123825 A5 JP 2007123825A5
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JP
Japan
Prior art keywords
gas
semiconductor substrate
manufacturing
semiconductor device
nitride film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2006176863A
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English (en)
Japanese (ja)
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JP2007123825A (ja
JP5283833B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from JP2006176863A external-priority patent/JP5283833B2/ja
Priority to JP2006176863A priority Critical patent/JP5283833B2/ja
Priority to EP06783160A priority patent/EP1929513A1/en
Priority to PCT/JP2006/317385 priority patent/WO2007037094A1/en
Priority to KR1020077017030A priority patent/KR100880309B1/ko
Priority to US11/547,691 priority patent/US7772129B2/en
Publication of JP2007123825A publication Critical patent/JP2007123825A/ja
Publication of JP2007123825A5 publication Critical patent/JP2007123825A5/ja
Priority to US12/801,912 priority patent/US8557717B2/en
Publication of JP5283833B2 publication Critical patent/JP5283833B2/ja
Application granted granted Critical
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2006176863A 2005-09-29 2006-06-27 半導体装置の製造方法 Expired - Fee Related JP5283833B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2006176863A JP5283833B2 (ja) 2005-09-29 2006-06-27 半導体装置の製造方法
US11/547,691 US7772129B2 (en) 2005-09-29 2006-08-28 Method for manufacturing a semiconductor device
PCT/JP2006/317385 WO2007037094A1 (en) 2005-09-29 2006-08-28 Method for manufacturing a semiconductor device with nitride and oxide layers
KR1020077017030A KR100880309B1 (ko) 2005-09-29 2006-08-28 반도체 장치의 제조 방법
EP06783160A EP1929513A1 (en) 2005-09-29 2006-08-28 Method for manufacturing a semiconductor device with nitride and oxide layers
US12/801,912 US8557717B2 (en) 2005-09-29 2010-07-01 Method for manufacturing a semiconductor device

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2005284057 2005-09-29
JP2005284057 2005-09-29
JP2006176863A JP5283833B2 (ja) 2005-09-29 2006-06-27 半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2007123825A JP2007123825A (ja) 2007-05-17
JP2007123825A5 true JP2007123825A5 (enExample) 2007-08-16
JP5283833B2 JP5283833B2 (ja) 2013-09-04

Family

ID=37651105

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006176863A Expired - Fee Related JP5283833B2 (ja) 2005-09-29 2006-06-27 半導体装置の製造方法

Country Status (5)

Country Link
US (2) US7772129B2 (enExample)
EP (1) EP1929513A1 (enExample)
JP (1) JP5283833B2 (enExample)
KR (1) KR100880309B1 (enExample)
WO (1) WO2007037094A1 (enExample)

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JP2007288069A (ja) * 2006-04-19 2007-11-01 Hitachi Kokusai Electric Inc 半導体装置の製造方法
US7960293B2 (en) * 2006-05-31 2011-06-14 Tokyo Electron Limited Method for forming insulating film and method for manufacturing semiconductor device
JP4861204B2 (ja) 2007-01-22 2012-01-25 株式会社東芝 半導体装置およびその製造方法
JP2009054951A (ja) * 2007-08-29 2009-03-12 Toshiba Corp 不揮発性半導体記憶素子及びその製造方法
JP4594973B2 (ja) 2007-09-26 2010-12-08 株式会社東芝 不揮発性半導体記憶装置
JP4611414B2 (ja) * 2007-12-26 2011-01-12 株式会社日立国際電気 半導体装置の製造方法、基板処理方法および基板処理装置
JP5348898B2 (ja) 2008-01-22 2013-11-20 株式会社東芝 半導体装置およびその製造方法
JP2009252774A (ja) * 2008-04-01 2009-10-29 Toshiba Corp 半導体記憶装置およびその製造方法
JP2010016067A (ja) * 2008-07-01 2010-01-21 Sony Corp 不揮発性半導体メモリデバイス、その製造方法および動作方法
JP5443873B2 (ja) * 2008-07-28 2014-03-19 株式会社東芝 半導体装置及びその製造方法
WO2010026625A1 (ja) * 2008-09-02 2010-03-11 株式会社 東芝 不揮発性半導体記憶装置
US8524616B2 (en) * 2008-11-12 2013-09-03 Microchip Technology Incorporated Method of nonstoichiometric CVD dielectric film surface passivation for film roughness control
JP2010177323A (ja) * 2009-01-28 2010-08-12 Toshiba Corp 不揮発性半導体記憶装置およびその製造方法
CN102498561B (zh) * 2009-09-17 2014-12-10 株式会社东芝 半导体装置的制造方法
JP5150606B2 (ja) * 2009-11-16 2013-02-20 株式会社東芝 不揮発性半導体記憶装置
WO2012060379A1 (ja) * 2010-11-04 2012-05-10 株式会社日立国際電気 半導体装置の製造方法、基板処理方法および基板処理装置
US8664729B2 (en) * 2011-12-14 2014-03-04 Taiwan Semiconductor Manufacturing Company, Ltd. Methods and apparatus for reduced gate resistance finFET
US10468412B2 (en) * 2016-06-28 2019-11-05 International Business Machines Corporation Formation of a semiconductor device with selective nitride grown on conductor
US10468409B2 (en) * 2018-03-14 2019-11-05 Taiwan Semiconductor Manufacturing Co., Ltd. FinFET device with oxidation-resist STI liner structure
US10957604B2 (en) 2018-10-31 2021-03-23 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method
US11302827B2 (en) * 2020-01-23 2022-04-12 Nanya Technology Corp. Semiconductor device with sidewall oxidized dielectric and method for fabricating the same

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JP4358504B2 (ja) * 2002-12-12 2009-11-04 忠弘 大見 不揮発性半導体記憶装置の製造方法
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JP3845073B2 (ja) * 2003-05-27 2006-11-15 株式会社東芝 半導体装置
JP2005089791A (ja) * 2003-09-12 2005-04-07 Sekisui Chem Co Ltd シリコン窒化膜形成方法
JP3887364B2 (ja) * 2003-09-19 2007-02-28 株式会社東芝 半導体装置の製造方法
KR100543209B1 (ko) 2003-12-16 2006-01-20 주식회사 하이닉스반도체 Ｓｏｎｏｓ 구조를 갖는 트랜지스터 제조 방법
JP2006216897A (ja) 2005-02-07 2006-08-17 Toshiba Corp 半導体装置及びその製造方法

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