KR100880309B1 - 반도체 장치의 제조 방법 - Google Patents
반도체 장치의 제조 방법 Download PDFInfo
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- KR100880309B1 KR100880309B1 KR1020077017030A KR20077017030A KR100880309B1 KR 100880309 B1 KR100880309 B1 KR 100880309B1 KR 1020077017030 A KR1020077017030 A KR 1020077017030A KR 20077017030 A KR20077017030 A KR 20077017030A KR 100880309 B1 KR100880309 B1 KR 100880309B1
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- Prior art keywords
- gas
- nitride film
- semiconductor substrate
- film
- partial pressure
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 131
- 239000004065 semiconductor Substances 0.000 title claims abstract description 121
- 238000000034 method Methods 0.000 title claims description 68
- 150000004767 nitrides Chemical class 0.000 claims abstract description 184
- 239000000758 substrate Substances 0.000 claims abstract description 171
- 238000010790 dilution Methods 0.000 claims abstract description 108
- 239000012895 dilution Substances 0.000 claims abstract description 108
- 238000005121 nitriding Methods 0.000 claims abstract description 87
- 239000012298 atmosphere Substances 0.000 claims abstract description 63
- 239000007789 gas Substances 0.000 claims description 305
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 111
- 229910052757 nitrogen Inorganic materials 0.000 claims description 60
- 229910052760 oxygen Inorganic materials 0.000 claims description 41
- 238000010438 heat treatment Methods 0.000 claims description 28
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- 230000001590 oxidative effect Effects 0.000 claims description 14
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- LPQOADBMXVRBNX-UHFFFAOYSA-N ac1ldcw0 Chemical group Cl.C1CN(C)CCN1C1=C(F)C=C2C(=O)C(C(O)=O)=CN3CCSC1=C32 LPQOADBMXVRBNX-UHFFFAOYSA-N 0.000 claims description 10
- 238000007667 floating Methods 0.000 claims description 5
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- 230000007547 defect Effects 0.000 abstract description 42
- 239000010408 film Substances 0.000 description 432
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 209
- 229910052710 silicon Inorganic materials 0.000 description 209
- 239000010703 silicon Substances 0.000 description 203
- 239000010410 layer Substances 0.000 description 114
- 229910052581 Si3N4 Inorganic materials 0.000 description 104
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 104
- 229910052814 silicon oxide Inorganic materials 0.000 description 59
- 238000007254 oxidation reaction Methods 0.000 description 53
- 230000003647 oxidation Effects 0.000 description 52
- 239000001301 oxygen Substances 0.000 description 39
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 38
- 230000008859 change Effects 0.000 description 30
- 238000007865 diluting Methods 0.000 description 30
- 238000010586 diagram Methods 0.000 description 29
- 230000000694 effects Effects 0.000 description 29
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- 230000015572 biosynthetic process Effects 0.000 description 17
- 229910052734 helium Inorganic materials 0.000 description 15
- 239000000463 material Substances 0.000 description 15
- 239000001307 helium Substances 0.000 description 14
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- 230000003746 surface roughness Effects 0.000 description 13
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- 238000005229 chemical vapour deposition Methods 0.000 description 12
- 239000001257 hydrogen Substances 0.000 description 12
- 229910052739 hydrogen Inorganic materials 0.000 description 12
- 229910001873 dinitrogen Inorganic materials 0.000 description 11
- 125000004433 nitrogen atom Chemical group N* 0.000 description 11
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 11
- 238000009826 distribution Methods 0.000 description 10
- 238000009413 insulation Methods 0.000 description 10
- 229910004298 SiO 2 Inorganic materials 0.000 description 9
- 238000002955 isolation Methods 0.000 description 9
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- 238000001020 plasma etching Methods 0.000 description 8
- DYCJFJRCWPVDHY-LSCFUAHRSA-N NBMPR Chemical compound O[C@@H]1[C@H](O)[C@@H](CO)O[C@H]1N1C2=NC=NC(SCC=3C=CC(=CC=3)[N+]([O-])=O)=C2N=C1 DYCJFJRCWPVDHY-LSCFUAHRSA-N 0.000 description 6
- 229910007991 Si-N Inorganic materials 0.000 description 6
- 229910006294 Si—N Inorganic materials 0.000 description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 6
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- 150000002831 nitrogen free-radicals Chemical class 0.000 description 5
- 150000003254 radicals Chemical class 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- -1 for example Substances 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 3
- 238000004435 EPR spectroscopy Methods 0.000 description 3
- 229910018557 Si O Inorganic materials 0.000 description 3
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 3
- 125000004429 atom Chemical group 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 3
- 229910001882 dioxygen Inorganic materials 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 230000008439 repair process Effects 0.000 description 3
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 238000001179 sorption measurement Methods 0.000 description 3
- 238000010301 surface-oxidation reaction Methods 0.000 description 3
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- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910008045 Si-Si Inorganic materials 0.000 description 2
- 229910006411 Si—Si Inorganic materials 0.000 description 2
- 102220604669 Transcription factor Sp1_S59A_mutation Human genes 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 2
- 239000007800 oxidant agent Substances 0.000 description 2
- 238000010791 quenching Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 2
- 229910021342 tungsten silicide Inorganic materials 0.000 description 2
- 229910006360 Si—O—N Inorganic materials 0.000 description 1
- 102220604668 Transcription factor Sp1_S56A_mutation Human genes 0.000 description 1
- UMVBXBACMIOFDO-UHFFFAOYSA-N [N].[Si] Chemical compound [N].[Si] UMVBXBACMIOFDO-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 238000010306 acid treatment Methods 0.000 description 1
- LDDQLRUQCUTJBB-UHFFFAOYSA-N ammonium fluoride Chemical compound [NH4+].[F-] LDDQLRUQCUTJBB-UHFFFAOYSA-N 0.000 description 1
- 230000003466 anti-cipated effect Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000000802 nitrating effect Effects 0.000 description 1
- 238000006902 nitrogenation reaction Methods 0.000 description 1
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- 238000005498 polishing Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- 239000010409 thin film Substances 0.000 description 1
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
- C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
- C23C8/08—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases only one element being applied
- C23C8/24—Nitriding
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
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- H01L21/0214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being a silicon oxynitride, e.g. SiON or SiON:H
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- H01L21/02321—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer
- H01L21/02323—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of oxygen
- H01L21/02326—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of oxygen into a nitride layer, e.g. changing SiN to SiON
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
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- H01L21/3143—Inorganic layers composed of alternated layers or of mixtures of nitrides and oxides or of oxinitrides, e.g. formation of oxinitride by oxidation of nitride layers
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Abstract
Description
Claims (23)
- 반도체 기판의 표면을 질화하는 제1 질화 가스와, 제조 중에 상기 반도체 기판과 실질적으로 반응하지 않는 제1 희석 가스를 포함하고, 상기 제1 희석 가스의 분압과 상기 제1 질화 가스의 분압의 합과, 상기 제1 질화 가스의 분압과의 비가 5 이상이고 또한 전체 압력이 3Torr 이상 40Torr 이하인 분위기 속에 상기 반도체 기판을 두고, 상기 반도체 기판의 표면에 질화막을 형성하는 공정을 구비하고, 상기 제1 희석 가스는, N2 가스를 포함하는 것을 특징으로 하는 반도체 장치의 제조 방법.
- 제1항에 있어서,상기 제1 질화 가스는, NH3, 래디컬 N*, 래디컬 N2 * 중 어느 하나인 것을 특징으로 하는 반도체 장치의 제조 방법.
- 제1항에 있어서,상기 분위기의 전체 압력이 3Torr 이상 30Torr 이하인 것을 특징으로 하는 반도체 장치의 제조 방법.
- 삭제
- 제1항에 있어서,상기 제1 희석 가스는, 상기 반도체 기판과 상기 질화막의 계면의 원자 진동 에너지에 가까운 고유 진동 에너지를 갖는 성분을 포함하는 것을 특징으로 하는 반도체 장치의 제조 방법.
- 제1항에 있어서,상기 반도체 기판의 표면에 상기 질화막을 형성한 후, 상기 반도체 기판을, 상기 반도체 기판과 실질적으로 반응하지 않는 가스의 분위기 속에 두고, 열 처리하는 공정을 더 구비한 것을 특징으로 하는 반도체 장치의 제조 방법.
- 제6항에 있어서,상기 반도체 기판과 실질적으로 반응하지 않는 가스는 N2 가스 또는 He 가스 중 어느 하나인 것을 특징으로 하는 반도체 장치의 제조 방법.
- 제1항에 있어서,상기 질화막을 형성하는 분위기는, 상기 제1 희석 가스의 분압과 상기 제1 질화 가스의 분압의 합과, 상기 제1 질화 가스의 분압과의 비가 10000 이하인 것을 특징으로 하는 반도체 장치의 제조 방법.
- 제1항에 있어서,상기 질화막은 700℃ 이상 850℃ 이하의 온도에서 형성하는 것을 특징으로 하는 반도체 장치의 제조 방법.
- 반도체 기판의 표면을 질화하는 제1 질화 가스와, 제조 중에 상기 반도체 기판과 실질적으로 반응하지 않는 제1 희석 가스를 포함하고, 상기 제1 희석 가스의 분압과 상기 제1 질화 가스의 분압의 합과, 상기 제1 질화 가스의 분압과의 비가 5 이상이고 또한 전체 압력이 3Torr 이상 40Torr 이하인 분위기 속에 상기 반도체 기판을 두고, 상기 반도체 기판의 표면에 질화막을 형성하는 공정과,래디컬한 제2 질화 가스의 분위기 속에, 표면에 상기 질화막이 형성된 상기 반도체 기판을 두고, 상기 반도체 기판과 상기 질화막 사이에 제1 질화층을 형성함과 함께 상기 질화막 위에 제2 질화층을 형성하는 공정을 구비한 것을 특징으로 하는 반도체 장치의 제조 방법.
- 제10항에 있어서,상기 질화막의 막 두께는, 4Å 이상 1㎚ 이하인 것을 특징으로 하는 반도체 장치의 제조 방법.
- 제10항에 있어서,상기 제2 질화 가스는, N* 또는 N2 * 중 어느 하나인 것을 특징으로 하는 반도체 장치의 제조 방법.
- 반도체 기판의 표면을 질화하는 제1 질화 가스와, 제조 중에 상기 반도체 기판과 실질적으로 반응하지 않는 제1 희석 가스를 포함하고, 상기 제1 희석 가스의 분압과 상기 제1 질화 가스의 분압의 합과, 상기 제1 질화 가스의 분압과의 비가 5 이상이고 또한 전체 압력이 3Torr 이상 40Torr 이하인 분위기 속에 상기 반도체 기판을 두고, 상기 반도체 기판의 표면에 질화막을 형성하는 공정과,표면에 상기 질화막이 형성된 상기 반도체 기판을, 산화 가스와, 제조 중에 상기 반도체 기판과 실질적으로 반응하지 않는 제2 희석 가스를 포함하는 분위기 속에 두고, 상기 반도체 기판과 상기 질화막 사이에 제1 산질화층을 형성함과 함께 상기 질화막의 표면에 제2 산질화층을 형성하는 공정을 구비한 것을 특징으로 하는 반도체 장치의 제조 방법.
- 제13항에 있어서,상기 산화 가스는, O2, N2O, NO, O* 중 어느 하나인 것을 특징으로 하는 반도체 장치의 제조 방법.
- 제13항에 있어서,상기 제2 희석 가스는 N2 가스인 것을 특징으로 하는 반도체 장치의 제조 방법.
- 제13항에 있어서,상기 질화막을 형성하는 공정과 상기 제1 산질화층을 형성하는 공정 사이에, 표면에 상기 질화막이 형성된 상기 반도체 기판을, 상기 반도체 기판과 실질적으로 반응하지 않는 가스의 분위기 속에 두고, 제1 열 처리하는 공정을 더 구비한 것을 특징으로 하는 반도체 장치의 제조 방법.
- 제13항에 있어서,상기 제1 및 제2 산질화층을 형성하는 공정은, 800℃ 이상 950℃ 이하인 것을 특징으로 하는 반도체 장치의 제조 방법.
- 제13항에 있어서,상기 제1 및 제2 산질화층을 형성한 후, 상기 반도체 기판을, 상기 반도체 기판과 실질적으로 반응하지 않는 가스의 분위기 속에 두고, 제2 열 처리하는 공정을 더 구비한 것을 특징으로 하는 반도체 장치의 제조 방법.
- 제18항에 있어서,상기 반도체 기판과 실질적으로 반응하지 않는 가스는 N2 가스 또는 He 가스 중 어느 하나인 것을 특징으로 하는 반도체 장치의 제조 방법.
- 제18항에 있어서,상기 제1 및 제2 산질화층을 형성한 후, 상기 제2 열 처리를 하기 전에, 상기 제2 산질화층에 질소를 도입하는 공정을 더 구비한 것을 특징으로 하는 반도체 장치의 제조 방법.
- 제1항에 있어서,상기 질화막은, 플로팅 게이트형 불휘발성 메모리의 터널 절연막에 포함되는 것을 특징으로 하는 반도체 장치의 제조 방법.
- 반도체 기판의 표면을 질화하는 제1 질화 가스와, 제조 중에 상기 반도체 기판과 실질적으로 반응하지 않는 제1 희석 가스를 포함하고, 상기 제1 희석 가스의 분압과 상기 제1 질화 가스의 분압의 합과, 상기 제1 질화 가스의 분압과의 비가 5 이상이고 또한 전체 압력이 3Torr 이상 40Torr 이하인 분위기 속에 상기 반도체 기판을 두고, 상기 반도체 기판의 표면에 질화막을 형성하는 공정을 구비하고, 상기 질화막은, MONOS형 불휘발성 메모리의 터널 절연막에 포함되는 것을 특징으로 하는 반도체 장치의 제조 방법.
- 반도체 기판의 표면을 질화하는 제1 질화 가스와, 제조 중에 상기 반도체 기판과 실질적으로 반응하지 않는 제1 희석 가스를 포함하고, 상기 제1 희석 가스의 분압과 상기 제1 질화 가스의 분압의 합과, 상기 제1 질화 가스의 분압과의 비가 5 이상이고 또한 전체 압력이 3Torr 이상 40Torr 이하인 분위기 속에 상기 반도체 기판을 두고, 상기 반도체 기판의 표면에 질화막을 형성하는 공정을 구비하고, 상기 질화막은, MISFET의 게이트 절연막에 포함되는 것을 특징으로 하는 반도체 장치의 제조 방법.
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JP2007288069A (ja) * | 2006-04-19 | 2007-11-01 | Hitachi Kokusai Electric Inc | 半導体装置の製造方法 |
WO2007139141A1 (ja) * | 2006-05-31 | 2007-12-06 | Tokyo Electron Limited | 絶縁膜の形成方法および半導体装置の製造方法 |
JP4861204B2 (ja) | 2007-01-22 | 2012-01-25 | 株式会社東芝 | 半導体装置およびその製造方法 |
JP2009054951A (ja) * | 2007-08-29 | 2009-03-12 | Toshiba Corp | 不揮発性半導体記憶素子及びその製造方法 |
JP4594973B2 (ja) | 2007-09-26 | 2010-12-08 | 株式会社東芝 | 不揮発性半導体記憶装置 |
JP4611414B2 (ja) * | 2007-12-26 | 2011-01-12 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理方法および基板処理装置 |
JP5348898B2 (ja) | 2008-01-22 | 2013-11-20 | 株式会社東芝 | 半導体装置およびその製造方法 |
JP2009252774A (ja) * | 2008-04-01 | 2009-10-29 | Toshiba Corp | 半導体記憶装置およびその製造方法 |
JP2010016067A (ja) * | 2008-07-01 | 2010-01-21 | Sony Corp | 不揮発性半導体メモリデバイス、その製造方法および動作方法 |
JP5443873B2 (ja) * | 2008-07-28 | 2014-03-19 | 株式会社東芝 | 半導体装置及びその製造方法 |
WO2010026625A1 (ja) * | 2008-09-02 | 2010-03-11 | 株式会社 東芝 | 不揮発性半導体記憶装置 |
US8524616B2 (en) * | 2008-11-12 | 2013-09-03 | Microchip Technology Incorporated | Method of nonstoichiometric CVD dielectric film surface passivation for film roughness control |
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JP5150606B2 (ja) * | 2009-11-16 | 2013-02-20 | 株式会社東芝 | 不揮発性半導体記憶装置 |
WO2012060379A1 (ja) * | 2010-11-04 | 2012-05-10 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理方法および基板処理装置 |
US8664729B2 (en) | 2011-12-14 | 2014-03-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods and apparatus for reduced gate resistance finFET |
US10468412B2 (en) * | 2016-06-28 | 2019-11-05 | International Business Machines Corporation | Formation of a semiconductor device with selective nitride grown on conductor |
US10468409B2 (en) * | 2018-03-14 | 2019-11-05 | Taiwan Semiconductor Manufacturing Co., Ltd. | FinFET device with oxidation-resist STI liner structure |
US10957604B2 (en) | 2018-10-31 | 2021-03-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device and method |
US11302827B2 (en) * | 2020-01-23 | 2022-04-12 | Nanya Technology Corp. | Semiconductor device with sidewall oxidized dielectric and method for fabricating the same |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020040847A1 (en) * | 2000-03-13 | 2002-04-11 | Tadahiro Ohmi | Method of forming a dielectric film |
KR20050060268A (ko) * | 2003-12-16 | 2005-06-22 | 주식회사 하이닉스반도체 | Sonos 구조를 갖는 트랜지스터 제조 방법 |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6035819B2 (ja) * | 1980-10-29 | 1985-08-16 | 日本電気株式会社 | X線露光用マスクの製造方法 |
JPS5913335A (ja) * | 1982-07-14 | 1984-01-24 | Toshiba Corp | 窒化膜形成方法 |
JPH0215630A (ja) * | 1988-07-01 | 1990-01-19 | Nec Corp | 半導体装置の保護膜形成方法 |
JP3040556B2 (ja) * | 1991-10-22 | 2000-05-15 | 沖電気工業株式会社 | 半導体装置の絶縁膜形成方法 |
JP3899150B2 (ja) * | 1996-12-05 | 2007-03-28 | シャープ株式会社 | 絶縁膜の形成方法 |
JP3326718B2 (ja) * | 1999-03-19 | 2002-09-24 | 富士通株式会社 | 半導体装置の製造方法 |
US20020137362A1 (en) * | 1999-07-29 | 2002-09-26 | Rajarao Jammy | Method for forming crystalline silicon nitride |
JP2001176870A (ja) | 1999-12-21 | 2001-06-29 | Toyota Motor Corp | 窒化膜形成方法 |
JP2002151486A (ja) * | 2000-10-30 | 2002-05-24 | Applied Materials Inc | 基体処理方法及び装置並びに基体処理装置の運転方法 |
JP2002368122A (ja) * | 2001-06-12 | 2002-12-20 | Nec Corp | 半導体装置及びその製造方法 |
US6503846B1 (en) * | 2001-06-20 | 2003-01-07 | Texas Instruments Incorporated | Temperature spike for uniform nitridization of ultra-thin silicon dioxide layers in transistor gates |
WO2003015151A1 (en) * | 2001-08-02 | 2003-02-20 | Tokyo Electron Limited | Base material treating method and electron device-use material |
US20030040171A1 (en) * | 2001-08-22 | 2003-02-27 | Weimer Ronald A. | Method of composite gate formation |
JP2005235792A (ja) * | 2002-02-27 | 2005-09-02 | Tokyo Electron Ltd | 基板処理方法 |
JP2003264190A (ja) | 2002-03-08 | 2003-09-19 | Toshiba Corp | 半導体装置及びその製造方法 |
JP4164324B2 (ja) * | 2002-09-19 | 2008-10-15 | スパンション エルエルシー | 半導体装置の製造方法 |
JP4358504B2 (ja) * | 2002-12-12 | 2009-11-04 | 忠弘 大見 | 不揮発性半導体記憶装置の製造方法 |
JP4537957B2 (ja) * | 2003-01-24 | 2010-09-08 | 秀行 桑原 | 表面にAlN域を有するアルミニウム材料及びその製造方法 |
JP3845073B2 (ja) * | 2003-05-27 | 2006-11-15 | 株式会社東芝 | 半導体装置 |
JP2005089791A (ja) * | 2003-09-12 | 2005-04-07 | Sekisui Chem Co Ltd | シリコン窒化膜形成方法 |
JP3887364B2 (ja) * | 2003-09-19 | 2007-02-28 | 株式会社東芝 | 半導体装置の製造方法 |
JP2006216897A (ja) | 2005-02-07 | 2006-08-17 | Toshiba Corp | 半導体装置及びその製造方法 |
-
2006
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Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020040847A1 (en) * | 2000-03-13 | 2002-04-11 | Tadahiro Ohmi | Method of forming a dielectric film |
KR20050060268A (ko) * | 2003-12-16 | 2005-06-22 | 주식회사 하이닉스반도체 | Sonos 구조를 갖는 트랜지스터 제조 방법 |
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EP1929513A1 (en) | 2008-06-11 |
US7772129B2 (en) | 2010-08-10 |
WO2007037094A1 (en) | 2007-04-05 |
JP2007123825A (ja) | 2007-05-17 |
US8557717B2 (en) | 2013-10-15 |
US20110003481A1 (en) | 2011-01-06 |
JP5283833B2 (ja) | 2013-09-04 |
KR20070097543A (ko) | 2007-10-04 |
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