JP2012509581A5 - - Google Patents

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Publication number
JP2012509581A5
JP2012509581A5 JP2011536838A JP2011536838A JP2012509581A5 JP 2012509581 A5 JP2012509581 A5 JP 2012509581A5 JP 2011536838 A JP2011536838 A JP 2011536838A JP 2011536838 A JP2011536838 A JP 2011536838A JP 2012509581 A5 JP2012509581 A5 JP 2012509581A5
Authority
JP
Japan
Prior art keywords
substrate
manufacturing
stoving
bonding
sapphire
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2011536838A
Other languages
English (en)
Japanese (ja)
Other versions
JP2012509581A (ja
Filing date
Publication date
Priority claimed from FR0857854A external-priority patent/FR2938702B1/fr
Application filed filed Critical
Publication of JP2012509581A publication Critical patent/JP2012509581A/ja
Publication of JP2012509581A5 publication Critical patent/JP2012509581A5/ja
Withdrawn legal-status Critical Current

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JP2011536838A 2008-11-19 2009-11-16 ヘテロ構造を作製するためのサファイア基板の表面の前処理 Withdrawn JP2012509581A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR0857854 2008-11-19
FR0857854A FR2938702B1 (fr) 2008-11-19 2008-11-19 Preparation de surface d'un substrat saphir pour la realisation d'heterostructures
PCT/EP2009/065202 WO2010057842A1 (en) 2008-11-19 2009-11-16 Preparing a surface of a sapphire substrate for fabricating heterostructures

Publications (2)

Publication Number Publication Date
JP2012509581A JP2012509581A (ja) 2012-04-19
JP2012509581A5 true JP2012509581A5 (enExample) 2012-12-06

Family

ID=40796247

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011536838A Withdrawn JP2012509581A (ja) 2008-11-19 2009-11-16 ヘテロ構造を作製するためのサファイア基板の表面の前処理

Country Status (7)

Country Link
US (1) US20120015497A1 (enExample)
EP (1) EP2359391A1 (enExample)
JP (1) JP2012509581A (enExample)
KR (1) KR20110086038A (enExample)
CN (1) CN102217037A (enExample)
FR (1) FR2938702B1 (enExample)
WO (1) WO2010057842A1 (enExample)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103477420B (zh) 2011-04-08 2016-11-16 Ev集团E·索尔纳有限责任公司 永久性粘合晶片的方法
FR2977260B1 (fr) 2011-06-30 2013-07-19 Soitec Silicon On Insulator Procede de fabrication d'une couche epitaxiale epaisse de nitrure de gallium sur un substrat de silicium ou analogue et couche obtenue par ledit procede
US8778737B2 (en) 2011-10-31 2014-07-15 International Business Machines Corporation Flattened substrate surface for substrate bonding
US10052848B2 (en) 2012-03-06 2018-08-21 Apple Inc. Sapphire laminates
WO2014015899A1 (de) * 2012-07-24 2014-01-30 Ev Group E. Thallner Gmbh Verfahren und vorrichtung zum permanenten bonden von wafern
US9221289B2 (en) 2012-07-27 2015-12-29 Apple Inc. Sapphire window
US9232672B2 (en) 2013-01-10 2016-01-05 Apple Inc. Ceramic insert control mechanism
US9608433B2 (en) * 2013-03-14 2017-03-28 Hubbell Incorporated GFCI test monitor circuit
SG11201508969QA (en) * 2013-05-01 2015-12-30 Shinetsu Chemical Co Method for producing hybrid substrate, and hybrid substrate
US9678540B2 (en) 2013-09-23 2017-06-13 Apple Inc. Electronic component embedded in ceramic material
US9632537B2 (en) 2013-09-23 2017-04-25 Apple Inc. Electronic component embedded in ceramic material
US9154678B2 (en) 2013-12-11 2015-10-06 Apple Inc. Cover glass arrangement for an electronic device
US9225056B2 (en) 2014-02-12 2015-12-29 Apple Inc. Antenna on sapphire structure
FR3034252B1 (fr) * 2015-03-24 2018-01-19 Soitec Procede de reduction de la contamination metallique sur la surface d'un substrat
US10406634B2 (en) 2015-07-01 2019-09-10 Apple Inc. Enhancing strength in laser cutting of ceramic components
FR3042649B1 (fr) * 2015-10-20 2019-06-21 Soitec Procede de fabrication d'une structure hybride
KR102701964B1 (ko) * 2016-02-16 2024-09-02 에베 그룹 에. 탈너 게엠베하 기판을 접합하기 위한 방법 및 장치
FR3068508B1 (fr) * 2017-06-30 2019-07-26 Soitec Procede de transfert d'une couche mince sur un substrat support presentant des coefficients de dilatation thermique differents
CN108493321A (zh) * 2018-03-26 2018-09-04 华灿光电（浙江）有限公司 一种发光二极管芯片及其制备方法
CN111041423B (zh) * 2019-12-10 2021-11-19 太原理工大学 蓝宝石表面结构与成分梯度层设计改善其焊接性能的方法
CN119812021B (zh) * 2024-12-27 2025-06-27 杭州芯聚半导体有限公司 一种蓝宝石衬底与硅衬底热压键合涨缩问题的改善方法

Family Cites Families (18)

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Publication number Priority date Publication date Assignee Title
US5849627A (en) * 1990-02-07 1998-12-15 Harris Corporation Bonded wafer processing with oxidative bonding
JPH0636413B2 (ja) * 1990-03-29 1994-05-11 信越半導体株式会社 半導体素子形成用基板の製造方法
JPH05235312A (ja) * 1992-02-19 1993-09-10 Fujitsu Ltd 半導体基板及びその製造方法
US5441591A (en) * 1993-06-07 1995-08-15 The United States Of America As Represented By The Secretary Of The Navy Silicon to sapphire bond
JP3250721B2 (ja) * 1995-12-12 2002-01-28 キヤノン株式会社 Ｓｏｉ基板の製造方法
US6180496B1 (en) * 1997-08-29 2001-01-30 Silicon Genesis Corporation In situ plasma wafer bonding method
US6423613B1 (en) * 1998-11-10 2002-07-23 Micron Technology, Inc. Low temperature silicon wafer bond process with bulk material bond strength
US6281146B1 (en) * 1999-09-15 2001-08-28 Taiwan Semiconductor Manufacturing Company Plasma enhanced chemical vapor deposition (PECVD) method for forming microelectronic layer with enhanced film thickness uniformity
US6563133B1 (en) * 2000-08-09 2003-05-13 Ziptronix, Inc. Method of epitaxial-like wafer bonding at low temperature and bonded structure
US6930041B2 (en) * 2000-12-07 2005-08-16 Micron Technology, Inc. Photo-assisted method for semiconductor fabrication
US6576564B2 (en) * 2000-12-07 2003-06-10 Micron Technology, Inc. Photo-assisted remote plasma apparatus and method
US20030089950A1 (en) * 2001-11-15 2003-05-15 Kuech Thomas F. Bonding of silicon and silicon-germanium to insulating substrates
SE521938C2 (sv) * 2001-12-27 2003-12-23 Cerbio Tech Ab Keramiskt material, förfarande för framställning av keramiskt material och benimplantat, tandfyllnadsimplantat och biocement innefattande det keramiska materialet
US7339187B2 (en) * 2002-05-21 2008-03-04 State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University Transistor structures
US6911375B2 (en) * 2003-06-02 2005-06-28 International Business Machines Corporation Method of fabricating silicon devices on sapphire with wafer bonding at low temperature
DE10326578B4 (de) * 2003-06-12 2006-01-19 Siltronic Ag Verfahren zur Herstellung einer SOI-Scheibe
FR2884966B1 (fr) * 2005-04-22 2007-08-17 Soitec Silicon On Insulator Procede de collage de deux tranches realisees dans des materiaux choisis parmi les materiaux semiconducteurs
US7601271B2 (en) * 2005-11-28 2009-10-13 S.O.I.Tec Silicon On Insulator Technologies Process and equipment for bonding by molecular adhesion

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