JP2008263025A5 - - Google Patents

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Publication number
JP2008263025A5
JP2008263025A5 JP2007104039A JP2007104039A JP2008263025A5 JP 2008263025 A5 JP2008263025 A5 JP 2008263025A5 JP 2007104039 A JP2007104039 A JP 2007104039A JP 2007104039 A JP2007104039 A JP 2007104039A JP 2008263025 A5 JP2008263025 A5 JP 2008263025A5
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JP
Japan
Prior art keywords
single crystal
semiconductor single
semiconductor
manufacturing
temperature
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JP2007104039A
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English (en)
Japanese (ja)
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JP2008263025A (ja
JP5168990B2 (ja
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Priority to JP2007104039A priority Critical patent/JP5168990B2/ja
Priority claimed from JP2007104039A external-priority patent/JP5168990B2/ja
Publication of JP2008263025A publication Critical patent/JP2008263025A/ja
Publication of JP2008263025A5 publication Critical patent/JP2008263025A5/ja
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JP2007104039A 2007-04-11 2007-04-11 半導体基板の製造方法 Active JP5168990B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007104039A JP5168990B2 (ja) 2007-04-11 2007-04-11 半導体基板の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007104039A JP5168990B2 (ja) 2007-04-11 2007-04-11 半導体基板の製造方法

Publications (3)

Publication Number Publication Date
JP2008263025A JP2008263025A (ja) 2008-10-30
JP2008263025A5 true JP2008263025A5 (enExample) 2010-02-04
JP5168990B2 JP5168990B2 (ja) 2013-03-27

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Family Applications (1)

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JP2007104039A Active JP5168990B2 (ja) 2007-04-11 2007-04-11 半導体基板の製造方法

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JP (1) JP5168990B2 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5205840B2 (ja) * 2007-07-06 2013-06-05 信越半導体株式会社 半導体基板の製造方法
WO2021079745A1 (ja) 2019-10-24 2021-04-29 信越半導体株式会社 半導体基板の製造方法及び半導体基板
JP7247902B2 (ja) 2020-01-10 2023-03-29 信越半導体株式会社 エピタキシャルウェーハの製造方法
US20240063027A1 (en) 2021-01-25 2024-02-22 Shin-Etsu Handotai Co., Ltd. Method for producing an epitaxial wafer
CN114005753B (zh) * 2021-10-29 2023-07-11 西安微电子技术研究所 一种igbt产品的氧化工艺方法及氧化后igbt产品

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04311029A (ja) * 1991-04-09 1992-11-02 Seiko Epson Corp 半導体薄膜の製造方法
JPH09162088A (ja) * 1995-12-13 1997-06-20 Asahi Chem Ind Co Ltd 半導体基板とその製造方法
JP2003303971A (ja) * 2002-04-09 2003-10-24 Matsushita Electric Ind Co Ltd 半導体基板及び半導体装置
JP3604018B2 (ja) * 2002-05-24 2004-12-22 独立行政法人科学技術振興機構 シリコン基材表面の二酸化シリコン膜形成方法、半導体基材表面の酸化膜形成方法、及び半導体装置の製造方法
US7045432B2 (en) * 2004-02-04 2006-05-16 Freescale Semiconductor, Inc. Method for forming a semiconductor device with local semiconductor-on-insulator (SOI)
JP4095615B2 (ja) * 2004-02-16 2008-06-04 光 小林 酸化膜の形成方法、半導体装置、半導体装置の製造方法

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