JP2013105966A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2013105966A5 JP2013105966A5 JP2011250256A JP2011250256A JP2013105966A5 JP 2013105966 A5 JP2013105966 A5 JP 2013105966A5 JP 2011250256 A JP2011250256 A JP 2011250256A JP 2011250256 A JP2011250256 A JP 2011250256A JP 2013105966 A5 JP2013105966 A5 JP 2013105966A5
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- oxide film
- trench
- semiconductor device
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims description 20
- 239000004065 semiconductor Substances 0.000 claims description 7
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 7
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 6
- 125000004433 nitrogen atom Chemical group N* 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 239000007789 gas Substances 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- MGWGWNFMUOTEHG-UHFFFAOYSA-N 4-(3,5-dimethylphenyl)-1,3-thiazol-2-amine Chemical compound CC1=CC(C)=CC(C=2N=C(N)SC=2)=C1 MGWGWNFMUOTEHG-UHFFFAOYSA-N 0.000 description 1
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- JCXJVPUVTGWSNB-UHFFFAOYSA-N nitrogen dioxide Inorganic materials O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 description 1
- 239000001272 nitrous oxide Substances 0.000 description 1
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011250256A JP5834801B2 (ja) | 2011-11-16 | 2011-11-16 | 半導体装置の製造方法および半導体装置 |
| KR1020147004423A KR20140041863A (ko) | 2011-11-16 | 2012-09-26 | 반도체 장치의 제조 방법 및 반도체 장치 |
| CN201280049775.7A CN103890951B (zh) | 2011-11-16 | 2012-09-26 | 用于制造半导体器件的方法和半导体器件 |
| EP12849942.3A EP2782137A4 (en) | 2011-11-16 | 2012-09-26 | METHOD FOR PRODUCING A SEMICONDUCTOR COMPONENT AND SEMICONDUCTOR COMPONENT |
| PCT/JP2012/074661 WO2013073293A1 (ja) | 2011-11-16 | 2012-09-26 | 半導体装置の製造方法および半導体装置 |
| US13/676,931 US20130119407A1 (en) | 2011-11-16 | 2012-11-14 | Method for manufacturing semiconductor device, and semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011250256A JP5834801B2 (ja) | 2011-11-16 | 2011-11-16 | 半導体装置の製造方法および半導体装置 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015161088A Division JP6070790B2 (ja) | 2015-08-18 | 2015-08-18 | 半導体装置の製造方法および半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013105966A JP2013105966A (ja) | 2013-05-30 |
| JP2013105966A5 true JP2013105966A5 (enExample) | 2014-10-16 |
| JP5834801B2 JP5834801B2 (ja) | 2015-12-24 |
Family
ID=48279749
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011250256A Active JP5834801B2 (ja) | 2011-11-16 | 2011-11-16 | 半導体装置の製造方法および半導体装置 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20130119407A1 (enExample) |
| EP (1) | EP2782137A4 (enExample) |
| JP (1) | JP5834801B2 (enExample) |
| KR (1) | KR20140041863A (enExample) |
| CN (1) | CN103890951B (enExample) |
| WO (1) | WO2013073293A1 (enExample) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3051982B2 (ja) | 1989-06-01 | 2000-06-12 | 東急建設株式会社 | 全天光集光系 |
| JP5806600B2 (ja) * | 2011-11-21 | 2015-11-10 | 住友電気工業株式会社 | 炭化珪素半導体装置の製造方法 |
| JP5751146B2 (ja) * | 2011-11-24 | 2015-07-22 | 住友電気工業株式会社 | 半導体装置およびその製造方法 |
| JP2015015352A (ja) | 2013-07-04 | 2015-01-22 | 住友電気工業株式会社 | 炭化珪素半導体装置の製造方法 |
| US9570570B2 (en) | 2013-07-17 | 2017-02-14 | Cree, Inc. | Enhanced gate dielectric for a field effect device with a trenched gate |
| JP6357869B2 (ja) * | 2014-05-20 | 2018-07-18 | 住友電気工業株式会社 | 炭化珪素半導体装置の製造方法 |
| CN104465440A (zh) * | 2014-11-26 | 2015-03-25 | 上海华力微电子有限公司 | 一种监测原位水汽生长栅氧化膜的生长缺陷的方法 |
| CN109037060A (zh) * | 2018-07-19 | 2018-12-18 | 厦门芯代集成电路有限公司 | 一种能抑制沟道迁移率低下的igbt新结构的制备方法 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3471473B2 (ja) | 1994-04-06 | 2003-12-02 | 株式会社デンソー | 半導体装置及びその製造方法 |
| JP3551909B2 (ja) * | 1999-11-18 | 2004-08-11 | 株式会社デンソー | 炭化珪素半導体装置の製造方法 |
| JP4843854B2 (ja) * | 2001-03-05 | 2011-12-21 | 住友電気工業株式会社 | Ｍｏｓデバイス |
| US20060214268A1 (en) * | 2005-03-25 | 2006-09-28 | Shindengen Electric Manufacturing Co., Ltd. | SiC semiconductor device |
| JP4775102B2 (ja) * | 2005-05-09 | 2011-09-21 | 住友電気工業株式会社 | 半導体装置の製造方法 |
| JP5017823B2 (ja) * | 2005-09-12 | 2012-09-05 | 富士電機株式会社 | 半導体素子の製造方法 |
| US20070096107A1 (en) * | 2005-11-03 | 2007-05-03 | Brown Dale M | Semiconductor devices with dielectric layers and methods of fabricating same |
| JP4923543B2 (ja) * | 2005-11-30 | 2012-04-25 | トヨタ自動車株式会社 | 炭化珪素半導体装置及びその製造方法 |
| JP2008226997A (ja) * | 2007-03-09 | 2008-09-25 | Sumitomo Electric Ind Ltd | 半導体装置およびその製造方法 |
| JP5588670B2 (ja) * | 2008-12-25 | 2014-09-10 | ローム株式会社 | 半導体装置 |
| US8709897B2 (en) * | 2010-11-30 | 2014-04-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | High performance strained source-drain structure and method of fabricating the same |
-
2011
- 2011-11-16 JP JP2011250256A patent/JP5834801B2/ja active Active
-
2012
- 2012-09-26 CN CN201280049775.7A patent/CN103890951B/zh active Active
- 2012-09-26 KR KR1020147004423A patent/KR20140041863A/ko not_active Ceased
- 2012-09-26 EP EP12849942.3A patent/EP2782137A4/en not_active Withdrawn
- 2012-09-26 WO PCT/JP2012/074661 patent/WO2013073293A1/ja not_active Ceased
- 2012-11-14 US US13/676,931 patent/US20130119407A1/en not_active Abandoned
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2013105966A5 (enExample) | ||
| JP2011077514A5 (enExample) | ||
| JP2011142309A5 (ja) | 半導体装置の作製方法 | |
| JP2014007388A5 (ja) | 半導体装置の作製方法 | |
| JP2011142310A5 (ja) | 半導体装置の作製方法 | |
| JP2011029637A5 (enExample) | ||
| JP2012084860A5 (enExample) | ||
| JP2011192958A5 (enExample) | ||
| JP2013016862A5 (enExample) | ||
| JP2013513235A5 (enExample) | ||
| JP2012004549A5 (ja) | 半導体装置 | |
| JP2017533589A5 (enExample) | ||
| JP2013070070A5 (ja) | 半導体装置及びその作製方法 | |
| JP2013219336A5 (enExample) | ||
| WO2012103528A3 (en) | Low-temperature fabrication of metal oxide thin films and nanomaterial-derived metal composite thin films | |
| JP2011243973A5 (enExample) | ||
| JP2017017320A5 (enExample) | ||
| JP2014103390A5 (enExample) | ||
| JP2011222988A5 (enExample) | ||
| JP2016139777A5 (ja) | 半導体装置および半導体装置の作製方法 | |
| JP2011243971A5 (enExample) | ||
| JP2014225651A5 (enExample) | ||
| JP2014199907A5 (ja) | 半導体装置 | |
| JP2012033911A5 (enExample) | ||
| JP2012009838A5 (ja) | 半導体装置の作製方法 |