WO2009020023A1 - 出力調整方法、シリコンエピタキシャルウェーハの製造方法、及びサセプタ - Google Patents
出力調整方法、シリコンエピタキシャルウェーハの製造方法、及びサセプタ Download PDFInfo
- Publication number
- WO2009020023A1 WO2009020023A1 PCT/JP2008/063657 JP2008063657W WO2009020023A1 WO 2009020023 A1 WO2009020023 A1 WO 2009020023A1 JP 2008063657 W JP2008063657 W JP 2008063657W WO 2009020023 A1 WO2009020023 A1 WO 2009020023A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- susceptor
- epitaxial wafer
- silicon substrate
- silicon epitaxial
- power adjusting
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
第1サセプタ13として、シリコン基板Wを載置する面に複数の凹部13bが形成されたものを用い、シリコン基板Wの主表面のうち、凹部13bに対応する位置に形成される凸状又は凹状の複数のエピタキシャル層の高さ又は深さ同士が略一定となるよう、加熱装置17a,17bの出力を調整する。これにより、シリコン基板とサセプタとの温度差をシリコン基板全面にわたり略均一にすることができる。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007-203049 | 2007-08-03 | ||
JP2007203049A JP2009038294A (ja) | 2007-08-03 | 2007-08-03 | 出力調整方法、シリコンエピタキシャルウェーハの製造方法、及びサセプタ |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2009020023A1 true WO2009020023A1 (ja) | 2009-02-12 |
Family
ID=40341257
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2008/063657 WO2009020023A1 (ja) | 2007-08-03 | 2008-07-30 | 出力調整方法、シリコンエピタキシャルウェーハの製造方法、及びサセプタ |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP2009038294A (ja) |
WO (1) | WO2009020023A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109791097A (zh) * | 2017-07-18 | 2019-05-21 | 埃耶士株式会社 | 基板分析用管嘴及基板分析方法 |
EP3951027A4 (en) * | 2019-03-29 | 2022-12-28 | Kwansei Gakuin Educational Foundation | SUBSTRATE PREPARATION DEVICE FOR LARGE DIAMETER SEMICONDUCTOR SUBSTRATES |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4978608B2 (ja) * | 2008-10-17 | 2012-07-18 | 信越半導体株式会社 | エピタキシャルウエーハの製造方法 |
JP5776090B2 (ja) * | 2010-07-21 | 2015-09-09 | 株式会社 天谷製作所 | 成膜プロセス |
KR102011146B1 (ko) * | 2012-12-18 | 2019-08-14 | 에스케이실트론 주식회사 | 에피택셜 웨이퍼 제조장치 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001126995A (ja) * | 1999-10-29 | 2001-05-11 | Applied Materials Inc | 半導体製造装置 |
JP2004200436A (ja) * | 2002-12-19 | 2004-07-15 | Toshiba Ceramics Co Ltd | サセプタ及びその製造方法 |
-
2007
- 2007-08-03 JP JP2007203049A patent/JP2009038294A/ja active Pending
-
2008
- 2008-07-30 WO PCT/JP2008/063657 patent/WO2009020023A1/ja active Application Filing
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001126995A (ja) * | 1999-10-29 | 2001-05-11 | Applied Materials Inc | 半導体製造装置 |
JP2004200436A (ja) * | 2002-12-19 | 2004-07-15 | Toshiba Ceramics Co Ltd | サセプタ及びその製造方法 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109791097A (zh) * | 2017-07-18 | 2019-05-21 | 埃耶士株式会社 | 基板分析用管嘴及基板分析方法 |
CN109791097B (zh) * | 2017-07-18 | 2022-01-04 | 埃耶士株式会社 | 基板分析用管嘴及基板分析方法 |
EP3951027A4 (en) * | 2019-03-29 | 2022-12-28 | Kwansei Gakuin Educational Foundation | SUBSTRATE PREPARATION DEVICE FOR LARGE DIAMETER SEMICONDUCTOR SUBSTRATES |
US11955354B2 (en) | 2019-03-29 | 2024-04-09 | Kwansei Gakuin Educational Foundation | Semiconductor substrate manufacturing device applicable to large-diameter semiconductor substrate |
Also Published As
Publication number | Publication date |
---|---|
JP2009038294A (ja) | 2009-02-19 |
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