WO2008123213A1 - 半導体装置及び半導体製造方法 - Google Patents
半導体装置及び半導体製造方法 Download PDFInfo
- Publication number
- WO2008123213A1 WO2008123213A1 PCT/JP2008/055488 JP2008055488W WO2008123213A1 WO 2008123213 A1 WO2008123213 A1 WO 2008123213A1 JP 2008055488 W JP2008055488 W JP 2008055488W WO 2008123213 A1 WO2008123213 A1 WO 2008123213A1
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- Prior art keywords
- layer
- sic
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- polarity
- semiconductor
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Links
- 239000004065 semiconductor Substances 0.000 title 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 125000004429 atom Chemical group 0.000 abstract 1
- 125000004432 carbon atom Chemical group C* 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/355—Non-linear optics characterised by the materials used
- G02F1/3556—Semiconductor materials, e.g. quantum wells
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/355—Non-linear optics characterised by the materials used
- G02F1/3558—Poled materials, e.g. with periodic poling; Fabrication of domain inverted structures, e.g. for quasi-phase-matching [QPM]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02378—Silicon carbide
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02441—Group 14 semiconducting materials
- H01L21/02447—Silicon carbide
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02502—Layer structure consisting of two layers
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02505—Layer structure consisting of more than two layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02529—Silicon carbide
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02551—Group 12/16 materials
- H01L21/02554—Oxides
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/8213—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using SiC technology
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/8252—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using III-V technology
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/8258—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using a combination of technologies covered by H01L21/8206, H01L21/8213, H01L21/822, H01L21/8252, H01L21/8254 or H01L21/8256
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0605—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits made of compound material, e.g. AIIIBV
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2202/00—Materials and properties
- G02F2202/10—Materials and properties semiconductor
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Nonlinear Science (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Biophysics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Ceramic Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Junction Field-Effect Transistors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/450,424 US20100072485A1 (en) | 2007-03-26 | 2008-03-25 | Semiconductor device and semiconductor manufacturing method |
JP2009509104A JPWO2008123213A1 (ja) | 2007-03-26 | 2008-03-25 | 半導体装置及び半導体製造方法 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007-080243 | 2007-03-26 | ||
JP2007080243 | 2007-03-26 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2008123213A1 true WO2008123213A1 (ja) | 2008-10-16 |
Family
ID=39830708
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2008/055488 WO2008123213A1 (ja) | 2007-03-26 | 2008-03-25 | 半導体装置及び半導体製造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US20100072485A1 (ja) |
JP (1) | JPWO2008123213A1 (ja) |
WO (1) | WO2008123213A1 (ja) |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010263011A (ja) * | 2009-04-30 | 2010-11-18 | Fujitsu Ltd | 化合物半導体装置及びその製造方法 |
JP2011003652A (ja) * | 2009-06-17 | 2011-01-06 | Fujitsu Ltd | 半導体装置及びその製造方法 |
JP2012041204A (ja) * | 2010-08-13 | 2012-03-01 | Seiko Epson Corp | 立方晶炭化ケイ素膜の製造方法及び立方晶炭化ケイ素膜付き基板の製造方法 |
JP2012054352A (ja) * | 2010-08-31 | 2012-03-15 | Fujitsu Ltd | 化合物半導体装置及びその製造方法 |
WO2013038980A1 (ja) * | 2011-09-15 | 2013-03-21 | シャープ株式会社 | 窒化物半導体層を成長させるためのバッファ層構造を有する基板 |
JP2013069878A (ja) * | 2011-09-22 | 2013-04-18 | Sharp Corp | 窒化物半導体層を成長させるためのバッファ層構造を有する基板 |
JP2015146450A (ja) * | 2015-04-03 | 2015-08-13 | 株式会社東芝 | 半導体素子 |
JP2015526902A (ja) * | 2012-07-25 | 2015-09-10 | レイセオン カンパニー | 複数の装置を集積するモノリシック集積回路チップ |
JP2016134609A (ja) * | 2015-01-22 | 2016-07-25 | 富士通株式会社 | 化合物半導体装置及びその製造方法 |
US9748343B2 (en) | 2015-07-29 | 2017-08-29 | Kabushiki Kaisha Toshiba | Semiconductor device |
US11276774B2 (en) | 2019-01-04 | 2022-03-15 | Kabushiki Kaisha Toshiba | Semiconductor device, inverter circuit, driving device, vehicle, and elevator |
US11276758B2 (en) | 2019-01-04 | 2022-03-15 | Kabushiki Kaisha Toshiba | Semiconductor device, inverter circuit, driving device, vehicle, and elevator having a reduced on-resistance with a silicon carbide layer |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20130031598A (ko) * | 2011-09-21 | 2013-03-29 | 한국전자통신연구원 | 광 도파로 |
KR20130076314A (ko) * | 2011-12-28 | 2013-07-08 | 삼성전자주식회사 | 파워소자 및 이의 제조방법 |
US8575657B2 (en) | 2012-03-20 | 2013-11-05 | Northrop Grumman Systems Corporation | Direct growth of diamond in backside vias for GaN HEMT devices |
US9166068B2 (en) * | 2012-05-03 | 2015-10-20 | The United States Of America As Represented By The Secretary Of The Army | Semiconductor heterobarrier electron device and method of making |
JP6149931B2 (ja) * | 2013-07-09 | 2017-06-21 | 富士電機株式会社 | 炭化珪素半導体装置の製造方法および炭化珪素半導体装置 |
JP2015126024A (ja) * | 2013-12-25 | 2015-07-06 | 株式会社豊田自動織機 | 半導体基板および半導体基板の製造方法 |
US10928329B2 (en) * | 2017-10-11 | 2021-02-23 | Board Of Regents, The University Of Texas System | Method and system for optically detecting and characterizing defects in semiconductors |
JP7016311B2 (ja) | 2018-11-06 | 2022-02-04 | 株式会社東芝 | 半導体装置 |
JP7269190B2 (ja) * | 2020-02-27 | 2023-05-08 | 株式会社東芝 | 窒化物結晶、光学装置、半導体装置、窒化物結晶の製造方法 |
Citations (5)
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JPH11504139A (ja) * | 1996-02-16 | 1999-04-06 | ベル コミュニケーションズ リサーチ,インコーポレイテッド | ウェーハ結合により達成された異なる結晶学的配列を有する非線形光導波路 |
JP2004140339A (ja) * | 2002-09-25 | 2004-05-13 | Univ Chiba | 窒化物系ヘテロ構造を有するデバイス及びその製造方法 |
JP2004259738A (ja) * | 2003-02-24 | 2004-09-16 | Sharp Corp | 窒化物系iii−v族化合物半導体の製造方法およびそれを含む半導体装置 |
WO2006114999A1 (ja) * | 2005-04-18 | 2006-11-02 | Kyoto University | 化合物半導体装置及び化合物半導体製造方法 |
JP2007272063A (ja) * | 2006-03-31 | 2007-10-18 | Furukawa Electric Co Ltd:The | 波長変換素の製造方法 |
Family Cites Families (3)
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CN1237272A (zh) * | 1997-08-27 | 1999-12-01 | 松下电器产业株式会社 | 碳化硅衬底及其制造方法以及使用碳化硅衬底的半导体元件 |
US6488771B1 (en) * | 2001-09-25 | 2002-12-03 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Method for growing low-defect single crystal heteroepitaxial films |
JP2005011915A (ja) * | 2003-06-18 | 2005-01-13 | Hitachi Ltd | 半導体装置、半導体回路モジュールおよびその製造方法 |
-
2008
- 2008-03-25 US US12/450,424 patent/US20100072485A1/en not_active Abandoned
- 2008-03-25 WO PCT/JP2008/055488 patent/WO2008123213A1/ja active Application Filing
- 2008-03-25 JP JP2009509104A patent/JPWO2008123213A1/ja active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH11504139A (ja) * | 1996-02-16 | 1999-04-06 | ベル コミュニケーションズ リサーチ,インコーポレイテッド | ウェーハ結合により達成された異なる結晶学的配列を有する非線形光導波路 |
JP2004140339A (ja) * | 2002-09-25 | 2004-05-13 | Univ Chiba | 窒化物系ヘテロ構造を有するデバイス及びその製造方法 |
JP2004259738A (ja) * | 2003-02-24 | 2004-09-16 | Sharp Corp | 窒化物系iii−v族化合物半導体の製造方法およびそれを含む半導体装置 |
WO2006114999A1 (ja) * | 2005-04-18 | 2006-11-02 | Kyoto University | 化合物半導体装置及び化合物半導体製造方法 |
JP2007272063A (ja) * | 2006-03-31 | 2007-10-18 | Furukawa Electric Co Ltd:The | 波長変換素の製造方法 |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010263011A (ja) * | 2009-04-30 | 2010-11-18 | Fujitsu Ltd | 化合物半導体装置及びその製造方法 |
JP2011003652A (ja) * | 2009-06-17 | 2011-01-06 | Fujitsu Ltd | 半導体装置及びその製造方法 |
JP2012041204A (ja) * | 2010-08-13 | 2012-03-01 | Seiko Epson Corp | 立方晶炭化ケイ素膜の製造方法及び立方晶炭化ケイ素膜付き基板の製造方法 |
JP2012054352A (ja) * | 2010-08-31 | 2012-03-15 | Fujitsu Ltd | 化合物半導体装置及びその製造方法 |
WO2013038980A1 (ja) * | 2011-09-15 | 2013-03-21 | シャープ株式会社 | 窒化物半導体層を成長させるためのバッファ層構造を有する基板 |
JP2013069878A (ja) * | 2011-09-22 | 2013-04-18 | Sharp Corp | 窒化物半導体層を成長させるためのバッファ層構造を有する基板 |
JP2015526902A (ja) * | 2012-07-25 | 2015-09-10 | レイセオン カンパニー | 複数の装置を集積するモノリシック集積回路チップ |
JP2016134609A (ja) * | 2015-01-22 | 2016-07-25 | 富士通株式会社 | 化合物半導体装置及びその製造方法 |
JP2015146450A (ja) * | 2015-04-03 | 2015-08-13 | 株式会社東芝 | 半導体素子 |
US9748343B2 (en) | 2015-07-29 | 2017-08-29 | Kabushiki Kaisha Toshiba | Semiconductor device |
US11276774B2 (en) | 2019-01-04 | 2022-03-15 | Kabushiki Kaisha Toshiba | Semiconductor device, inverter circuit, driving device, vehicle, and elevator |
US11276758B2 (en) | 2019-01-04 | 2022-03-15 | Kabushiki Kaisha Toshiba | Semiconductor device, inverter circuit, driving device, vehicle, and elevator having a reduced on-resistance with a silicon carbide layer |
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JPWO2008123213A1 (ja) | 2010-07-15 |
US20100072485A1 (en) | 2010-03-25 |
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