WO2008123213A1 - 半導体装置及び半導体製造方法 - Google Patents

半導体装置及び半導体製造方法 Download PDF

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Publication number
WO2008123213A1
WO2008123213A1 PCT/JP2008/055488 JP2008055488W WO2008123213A1 WO 2008123213 A1 WO2008123213 A1 WO 2008123213A1 JP 2008055488 W JP2008055488 W JP 2008055488W WO 2008123213 A1 WO2008123213 A1 WO 2008123213A1
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layer
sic
grown
polarity
semiconductor
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PCT/JP2008/055488
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English (en)
French (fr)
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Jun Suda
Tsunenobu Kimoto
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Kyoto University
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Priority to US12/450,424 priority Critical patent/US20100072485A1/en
Priority to JP2009509104A priority patent/JPWO2008123213A1/ja
Publication of WO2008123213A1 publication Critical patent/WO2008123213A1/ja

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    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
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    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
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    • G—PHYSICS
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/35—Non-linear optics
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    • G02F1/3558—Poled materials, e.g. with periodic poling; Fabrication of domain inverted structures, e.g. for quasi-phase-matching [QPM]
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  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

Ｓｉ極性面のＳｉで終端されたＳｉＣ表面１ａにＳｉ原子３を１原子層成長し、さらにＣ原子５を１原子層だけ成長する。その後は、ＳｉとＣとを供給しＳｉＣ層を形成する。この際に成長したＳｉＣ層の表面は、Ｓｉ極性面とは反対のＣ極性面となる。すなわち、上記の工程によれば、Ｓｉ極性のＳｉＣ層１上に１原子層のＳｉ中間層ｂを挟んで極性が反転したＣ極性のＳｉＣ層１ｘを成長することができる。これによりＳｉＣの極性を表面において反転させる技術を提供することが可能になる。
PCT/JP2008/055488 2007-03-26 2008-03-25 半導体装置及び半導体製造方法 WO2008123213A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US12/450,424 US20100072485A1 (en) 2007-03-26 2008-03-25 Semiconductor device and semiconductor manufacturing method
JP2009509104A JPWO2008123213A1 (ja) 2007-03-26 2008-03-25 半導体装置及び半導体製造方法

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JP2007-080243 2007-03-26
JP2007080243 2007-03-26

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Cited By (12)

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Publication number Priority date Publication date Assignee Title
JP2010263011A (ja) * 2009-04-30 2010-11-18 Fujitsu Ltd 化合物半導体装置及びその製造方法
JP2011003652A (ja) * 2009-06-17 2011-01-06 Fujitsu Ltd 半導体装置及びその製造方法
JP2012041204A (ja) * 2010-08-13 2012-03-01 Seiko Epson Corp 立方晶炭化ケイ素膜の製造方法及び立方晶炭化ケイ素膜付き基板の製造方法
JP2012054352A (ja) * 2010-08-31 2012-03-15 Fujitsu Ltd 化合物半導体装置及びその製造方法
WO2013038980A1 (ja) * 2011-09-15 2013-03-21 シャープ株式会社 窒化物半導体層を成長させるためのバッファ層構造を有する基板
JP2013069878A (ja) * 2011-09-22 2013-04-18 Sharp Corp 窒化物半導体層を成長させるためのバッファ層構造を有する基板
JP2015146450A (ja) * 2015-04-03 2015-08-13 株式会社東芝 半導体素子
JP2015526902A (ja) * 2012-07-25 2015-09-10 レイセオン カンパニー 複数の装置を集積するモノリシック集積回路チップ
JP2016134609A (ja) * 2015-01-22 2016-07-25 富士通株式会社 化合物半導体装置及びその製造方法
US9748343B2 (en) 2015-07-29 2017-08-29 Kabushiki Kaisha Toshiba Semiconductor device
US11276774B2 (en) 2019-01-04 2022-03-15 Kabushiki Kaisha Toshiba Semiconductor device, inverter circuit, driving device, vehicle, and elevator
US11276758B2 (en) 2019-01-04 2022-03-15 Kabushiki Kaisha Toshiba Semiconductor device, inverter circuit, driving device, vehicle, and elevator having a reduced on-resistance with a silicon carbide layer

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KR20130031598A (ko) * 2011-09-21 2013-03-29 한국전자통신연구원 광 도파로
KR20130076314A (ko) * 2011-12-28 2013-07-08 삼성전자주식회사 파워소자 및 이의 제조방법
US8575657B2 (en) 2012-03-20 2013-11-05 Northrop Grumman Systems Corporation Direct growth of diamond in backside vias for GaN HEMT devices
US9166068B2 (en) * 2012-05-03 2015-10-20 The United States Of America As Represented By The Secretary Of The Army Semiconductor heterobarrier electron device and method of making
JP6149931B2 (ja) * 2013-07-09 2017-06-21 富士電機株式会社 炭化珪素半導体装置の製造方法および炭化珪素半導体装置
JP2015126024A (ja) * 2013-12-25 2015-07-06 株式会社豊田自動織機 半導体基板および半導体基板の製造方法
US10928329B2 (en) * 2017-10-11 2021-02-23 Board Of Regents, The University Of Texas System Method and system for optically detecting and characterizing defects in semiconductors
JP7016311B2 (ja) 2018-11-06 2022-02-04 株式会社東芝 半導体装置
JP7269190B2 (ja) * 2020-02-27 2023-05-08 株式会社東芝 窒化物結晶、光学装置、半導体装置、窒化物結晶の製造方法

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JP2004140339A (ja) * 2002-09-25 2004-05-13 Univ Chiba 窒化物系ヘテロ構造を有するデバイス及びその製造方法
JP2004259738A (ja) * 2003-02-24 2004-09-16 Sharp Corp 窒化物系ｉｉｉ−ｖ族化合物半導体の製造方法およびそれを含む半導体装置
WO2006114999A1 (ja) * 2005-04-18 2006-11-02 Kyoto University 化合物半導体装置及び化合物半導体製造方法
JP2007272063A (ja) * 2006-03-31 2007-10-18 Furukawa Electric Co Ltd:The 波長変換素の製造方法

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010263011A (ja) * 2009-04-30 2010-11-18 Fujitsu Ltd 化合物半導体装置及びその製造方法
JP2011003652A (ja) * 2009-06-17 2011-01-06 Fujitsu Ltd 半導体装置及びその製造方法
JP2012041204A (ja) * 2010-08-13 2012-03-01 Seiko Epson Corp 立方晶炭化ケイ素膜の製造方法及び立方晶炭化ケイ素膜付き基板の製造方法
JP2012054352A (ja) * 2010-08-31 2012-03-15 Fujitsu Ltd 化合物半導体装置及びその製造方法
WO2013038980A1 (ja) * 2011-09-15 2013-03-21 シャープ株式会社 窒化物半導体層を成長させるためのバッファ層構造を有する基板
JP2013069878A (ja) * 2011-09-22 2013-04-18 Sharp Corp 窒化物半導体層を成長させるためのバッファ層構造を有する基板
JP2015526902A (ja) * 2012-07-25 2015-09-10 レイセオン カンパニー 複数の装置を集積するモノリシック集積回路チップ
JP2016134609A (ja) * 2015-01-22 2016-07-25 富士通株式会社 化合物半導体装置及びその製造方法
JP2015146450A (ja) * 2015-04-03 2015-08-13 株式会社東芝 半導体素子
US9748343B2 (en) 2015-07-29 2017-08-29 Kabushiki Kaisha Toshiba Semiconductor device
US11276774B2 (en) 2019-01-04 2022-03-15 Kabushiki Kaisha Toshiba Semiconductor device, inverter circuit, driving device, vehicle, and elevator
US11276758B2 (en) 2019-01-04 2022-03-15 Kabushiki Kaisha Toshiba Semiconductor device, inverter circuit, driving device, vehicle, and elevator having a reduced on-resistance with a silicon carbide layer

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