JP2008508696A5 - - Google Patents

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Publication number
JP2008508696A5
JP2008508696A5 JP2007522816A JP2007522816A JP2008508696A5 JP 2008508696 A5 JP2008508696 A5 JP 2008508696A5 JP 2007522816 A JP2007522816 A JP 2007522816A JP 2007522816 A JP2007522816 A JP 2007522816A JP 2008508696 A5 JP2008508696 A5 JP 2008508696A5
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JP
Japan
Prior art keywords
germanium
layer
substrate
hydrogen
silicon
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JP2007522816A
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English (en)
Japanese (ja)
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JP2008508696A (ja
JP4950047B2 (ja
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Priority claimed from PCT/US2005/026113 external-priority patent/WO2006012544A2/en
Publication of JP2008508696A publication Critical patent/JP2008508696A/ja
Publication of JP2008508696A5 publication Critical patent/JP2008508696A5/ja
Application granted granted Critical
Publication of JP4950047B2 publication Critical patent/JP4950047B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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JP2007522816A 2004-07-22 2005-07-22 ゲルマニウムの成長方法及び半導体基板の製造方法 Expired - Lifetime JP4950047B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US59030804P 2004-07-22 2004-07-22
US60/590,308 2004-07-22
PCT/US2005/026113 WO2006012544A2 (en) 2004-07-22 2005-07-22 Germanium substrate-type materials and approach therefor

Publications (3)

Publication Number Publication Date
JP2008508696A JP2008508696A (ja) 2008-03-21
JP2008508696A5 true JP2008508696A5 (enExample) 2008-09-04
JP4950047B2 JP4950047B2 (ja) 2012-06-13

Family

ID=35786735

Family Applications (1)

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JP2007522816A Expired - Lifetime JP4950047B2 (ja) 2004-07-22 2005-07-22 ゲルマニウムの成長方法及び半導体基板の製造方法

Country Status (3)

Country Link
US (3) US7495313B2 (enExample)
JP (1) JP4950047B2 (enExample)
WO (1) WO2006012544A2 (enExample)

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7622363B2 (en) * 2003-05-06 2009-11-24 Canon Kabushiki Kaisha Semiconductor substrate, semiconductor device, light emitting diode and producing method therefor
JP4771510B2 (ja) * 2004-06-23 2011-09-14 キヤノン株式会社 半導体層の製造方法及び基板の製造方法
US7247545B2 (en) * 2004-11-10 2007-07-24 Sharp Laboratories Of America, Inc. Fabrication of a low defect germanium film by direct wafer bonding
US20060105559A1 (en) * 2004-11-15 2006-05-18 International Business Machines Corporation Ultrathin buried insulators in Si or Si-containing material
US20100044344A1 (en) * 2005-07-26 2010-02-25 Nayfeh Munir H Silicon Nanoparticle Formation From Silicon Powder and Hexacholorplatinic Acid
JP4203054B2 (ja) * 2005-08-16 2008-12-24 株式会社東芝 半導体膜の成膜方法
FR2892230B1 (fr) * 2005-10-19 2008-07-04 Soitec Silicon On Insulator Traitement d'une couche de germamium
CN101405088A (zh) * 2005-11-10 2009-04-08 伊利诺伊大学受托管理委员会 硅纳米颗粒光伏装置
JP5171016B2 (ja) * 2006-10-27 2013-03-27 キヤノン株式会社 半導体部材、半導体物品の製造方法、その製造方法を用いたｌｅｄアレイ
JP2008198656A (ja) * 2007-02-08 2008-08-28 Shin Etsu Chem Co Ltd 半導体基板の製造方法
TWI360232B (en) * 2007-06-12 2012-03-11 Univ Nat Taiwan Method for manufacturing photodetector
JP2009094144A (ja) * 2007-10-04 2009-04-30 Canon Inc 発光素子の製造方法
US9475985B2 (en) * 2007-10-04 2016-10-25 Nanosi Advanced Technologies, Inc. Nanosilicon-based room temperature paints and adhesive coatings
JP5553135B2 (ja) * 2008-05-09 2014-07-16 国立大学法人名古屋大学 多層膜構造体の形成方法
FR2933534B1 (fr) * 2008-07-03 2011-04-01 Soitec Silicon On Insulator Procede de fabrication d'une structure comprenant une couche de germanium sur un substrat
KR20100064742A (ko) * 2008-12-05 2010-06-15 한국전자통신연구원 낮은 침투전위 밀도를 갖는 순수 게르마늄 박막 성장법
US8274116B2 (en) * 2009-11-16 2012-09-25 International Business Machines Corporation Control of threshold voltages in high-k metal gate stack and structures for CMOS devices
US9455146B2 (en) * 2009-12-17 2016-09-27 California Institute Of Technology Virtual substrates for epitaxial growth and methods of making the same
US8343839B2 (en) 2010-05-27 2013-01-01 International Business Machines Corporation Scaled equivalent oxide thickness for field effect transistor devices
US8216943B2 (en) * 2010-06-29 2012-07-10 Micron Technology, Inc. Epitaxial growth method
CN102157359B (zh) * 2011-01-30 2012-12-05 福建福顺微电子有限公司 6英寸powermos管外延层的制造方法
JP5830255B2 (ja) * 2011-03-03 2015-12-09 信越化学工業株式会社 半導体基板の製造方法
TWI521600B (zh) * 2011-06-03 2016-02-11 應用材料股份有限公司 在矽基材上形成高生長速率低電阻率的鍺膜之方法〈一〉
JP2013026345A (ja) * 2011-07-19 2013-02-04 Toshiba Corp 半導体装置の製造方法
CN102509734A (zh) * 2011-11-08 2012-06-20 复旦大学 一种利用ald制备锗基mos电容的方法
US20130280891A1 (en) * 2012-04-20 2013-10-24 Yihwan Kim Method and apparatus for germanium tin alloy formation by thermal cvd
US8883616B2 (en) 2012-07-31 2014-11-11 Hewlett-Packard Development Company, L.P. Germanium on insulator apparatus
KR101419533B1 (ko) * 2012-12-31 2014-07-14 성균관대학교산학협력단 저마늄을 이용한 반도체 소자의 접합 영역에서의 결함 치유 방법
US9087775B2 (en) * 2013-02-06 2015-07-21 International Business Machines Corporation Planar semiconductor growth on III-V material
US9418870B2 (en) * 2014-02-12 2016-08-16 International Business Machines Corporation Silicon germanium-on-insulator formation by thermal mixing
TWI646581B (zh) * 2015-02-09 2019-01-01 聯華電子股份有限公司 製作鍺磊晶層之方法以及應用其之製作元件之方法
US9553153B1 (en) 2015-12-02 2017-01-24 International Business Machines Corporation Post growth defect reduction for heteroepitaxial materials
US9595449B1 (en) 2015-12-21 2017-03-14 International Business Machines Corporation Silicon-germanium semiconductor devices and method of making
US9698266B1 (en) * 2016-03-09 2017-07-04 International Business Machines Corporation Semiconductor device strain relaxation buffer layer
US10256159B2 (en) 2017-01-23 2019-04-09 International Business Machines Corporation Formation of common interfacial layer on Si/SiGe dual channel complementary metal oxide semiconductor device
US11056592B2 (en) 2017-06-30 2021-07-06 Intel Corporation Silicon substrate modification to enable formation of thin, relaxed, germanium-based layer
US11450739B2 (en) 2018-09-14 2022-09-20 Intel Corporation Germanium-rich nanowire transistor with relaxed buffer layer
CN112259613A (zh) * 2020-10-26 2021-01-22 上海交通大学 提高锗Ge MOS电容器件性能的方法、系统及设备

Family Cites Families (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5997638A (en) * 1990-03-23 1999-12-07 International Business Machines Corporation Localized lattice-mismatch-accomodation dislocation network epitaxy
JPH0427116A (ja) * 1990-05-23 1992-01-30 Fujitsu Ltd 半導体異種接合を形成する方法
US5750000A (en) 1990-08-03 1998-05-12 Canon Kabushiki Kaisha Semiconductor member, and process for preparing same and semiconductor device formed by use of same
ATE259098T1 (de) 1990-08-03 2004-02-15 Canon Kk Verfahren zur herstellung eines soi-substrats
JP2693032B2 (ja) 1990-10-16 1997-12-17 キヤノン株式会社 半導体層の形成方法及びこれを用いる太陽電池の製造方法
CA2069038C (en) 1991-05-22 1997-08-12 Kiyofumi Sakaguchi Method for preparing semiconductor member
EP0534474B1 (en) 1991-09-27 2002-01-16 Canon Kabushiki Kaisha Method of processing a silicon substrate
JP3192000B2 (ja) 1992-08-25 2001-07-23 キヤノン株式会社 半導体基板及びその作製方法
JP3352118B2 (ja) 1992-08-25 2002-12-03 キヤノン株式会社 半導体装置及びその製造方法
JPH06244389A (ja) 1992-12-25 1994-09-02 Canon Inc 半導体基板の作製方法及び該方法により作製された半導体基板
JPH09331049A (ja) 1996-04-08 1997-12-22 Canon Inc 貼り合わせｓｏｉ基板の作製方法及びｓｏｉ基板
EP0851513B1 (en) 1996-12-27 2007-11-21 Canon Kabushiki Kaisha Method of producing semiconductor member and method of producing solar cell
US6756289B1 (en) 1996-12-27 2004-06-29 Canon Kabushiki Kaisha Method of producing semiconductor member and method of producing solar cell
JP3024584B2 (ja) * 1997-03-10 2000-03-21 日本電気株式会社 半導体装置の製造方法
CA2231625C (en) 1997-03-17 2002-04-02 Canon Kabushiki Kaisha Semiconductor substrate having compound semiconductor layer, process for its production, and electronic device fabricated on semiconductor substrate
CA2232796C (en) 1997-03-26 2002-01-22 Canon Kabushiki Kaisha Thin film forming process
JP3647191B2 (ja) 1997-03-27 2005-05-11 キヤノン株式会社 半導体装置の製造方法
US6143628A (en) 1997-03-27 2000-11-07 Canon Kabushiki Kaisha Semiconductor substrate and method of manufacturing the same
US6382292B1 (en) 1997-03-27 2002-05-07 Canon Kabushiki Kaisha Method and apparatus for separating composite member using fluid
JP3492142B2 (ja) 1997-03-27 2004-02-03 キヤノン株式会社 半導体基材の製造方法
EP0926709A3 (en) 1997-12-26 2000-08-30 Canon Kabushiki Kaisha Method of manufacturing an SOI structure
US6331208B1 (en) 1998-05-15 2001-12-18 Canon Kabushiki Kaisha Process for producing solar cell, process for producing thin-film semiconductor, process for separating thin-film semiconductor, and process for forming semiconductor
JP3697106B2 (ja) 1998-05-15 2005-09-21 キヤノン株式会社 半導体基板の作製方法及び半導体薄膜の作製方法
FR2783254B1 (fr) * 1998-09-10 2000-11-10 France Telecom Procede d'obtention d'une couche de germanium monocristallin sur un substrat de silicium monocristallin,et produits obtenus
US6391743B1 (en) 1998-09-22 2002-05-21 Canon Kabushiki Kaisha Method and apparatus for producing photoelectric conversion device
KR100695047B1 (ko) * 1999-06-23 2007-03-14 세이코 엡슨 가부시키가이샤 반도체 장치 및 그 제조 방법
US6452091B1 (en) 1999-07-14 2002-09-17 Canon Kabushiki Kaisha Method of producing thin-film single-crystal device, solar cell module and method of producing the same
JP2001284622A (ja) 2000-03-31 2001-10-12 Canon Inc 半導体部材の製造方法及び太陽電池の製造方法
JP2002359247A (ja) 2000-07-10 2002-12-13 Canon Inc 半導体部材、半導体装置およびそれらの製造方法
JP4708577B2 (ja) 2001-01-31 2011-06-22 キヤノン株式会社 薄膜半導体装置の製造方法
JP4803884B2 (ja) 2001-01-31 2011-10-26 キヤノン株式会社 薄膜半導体装置の製造方法
JP2002229473A (ja) 2001-01-31 2002-08-14 Canon Inc 表示装置の製造方法
EP1386349A1 (en) * 2001-04-17 2004-02-04 California Institute Of Technology A method of using a germanium layer transfer to si for photovoltaic applications and heterostructure made thereby
WO2003096390A1 (en) 2002-04-15 2003-11-20 Stanford University High-k dielectric for thermodynamically-stable substrate-type materials
US6774015B1 (en) * 2002-12-19 2004-08-10 International Business Machines Corporation Strained silicon-on-insulator (SSOI) and method to form the same
US7682947B2 (en) * 2003-03-13 2010-03-23 Asm America, Inc. Epitaxial semiconductor deposition methods and structures
JP2004335642A (ja) 2003-05-06 2004-11-25 Canon Inc 基板およびその製造方法
US7622363B2 (en) 2003-05-06 2009-11-24 Canon Kabushiki Kaisha Semiconductor substrate, semiconductor device, light emitting diode and producing method therefor
US20050124137A1 (en) 2003-05-07 2005-06-09 Canon Kabushiki Kaisha Semiconductor substrate and manufacturing method therefor
JP2005005509A (ja) 2003-06-12 2005-01-06 Canon Inc 薄膜トランジスタ及びその製造方法
WO2005084231A2 (en) * 2004-02-27 2005-09-15 Asm Aemrica, Inc. Germanium deposition
ES2363089T3 (es) * 2004-04-30 2011-07-20 Dichroic Cell S.R.L. Método para producir sustratos de ge virtuales para la integración iii/v sobre si (001).
JP4771510B2 (ja) 2004-06-23 2011-09-14 キヤノン株式会社 半導体層の製造方法及び基板の製造方法

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