WO2010082733A3 - 열전 나노와이어 및 그의 제조방법 - Google Patents

열전 나노와이어 및 그의 제조방법 Download PDF

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Publication number
WO2010082733A3
WO2010082733A3 PCT/KR2009/007873 KR2009007873W WO2010082733A3 WO 2010082733 A3 WO2010082733 A3 WO 2010082733A3 KR 2009007873 W KR2009007873 W KR 2009007873W WO 2010082733 A3 WO2010082733 A3 WO 2010082733A3
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WIPO (PCT)
Prior art keywords
thermoelectric
oxide layer
nanowire
substrate
thin film
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PCT/KR2009/007873
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English (en)
French (fr)
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WO2010082733A2 (ko
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이우영
함진희
이승현
노종욱
김현수
김우철
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연세대학교 산학협력단
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Publication of WO2010082733A2 publication Critical patent/WO2010082733A2/ko
Publication of WO2010082733A3 publication Critical patent/WO2010082733A3/ko

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B1/00—Single-crystal growth directly from the solid state
    • C30B1/12—Single-crystal growth directly from the solid state by pressure treatment during the growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/52—Alloys
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/852—Thermoelectric active materials comprising inorganic compositions comprising tellurium, selenium or sulfur
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/853—Thermoelectric active materials comprising inorganic compositions comprising arsenic, antimony or bismuth
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12014—All metal or with adjacent metals having metal particles
    • Y10T428/12028—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, etc.]
    • Y10T428/12063—Nonparticulate metal component
    • Y10T428/12097—Nonparticulate component encloses particles

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Nanotechnology (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Composite Materials (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)

Abstract

본 발명은 기판상에 열팽창계수가 서로 다른 산화물층과 열전물질을 적층한 후 열팽창계수의 차이에 따른 압축응력을 이용하여 열전물질로부터 단결정 열전 나노와이어를 성장시켜 제조된 열전 나노와이어 및 그의 제조방법에 관한 것이다. 본 발명은, 상면에 산화물층이 형성된 기판을 마련하는 공정; 상기 산화물층 상에 Al, Ag, Fe 또는 이들의 산화물로 이루어진 다수의 나노입자를 형성하는 공정; 상기 산화물층 상에 형성된 상기 다수의 나노입자를 포함하도록 그 산화물층 상에 열전특성을 갖는 열전물질 박막을 형성하는 공정; 상기 열전물질 박막이 형성된 기판을 열처리하여 상기 다수의 나노입자가 함유된 열전 나노와이어를 성장시키는 공정; 및 상기 열처리 공정 이후에 상기 기판을 상온에서 냉각시키는 공정; 을 포함하는 열전 나노와이어 제조방법을 제공한다.
PCT/KR2009/007873 2009-01-14 2009-12-29 열전 나노와이어 및 그의 제조방법 WO2010082733A2 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2009-0002995 2009-01-14
KR1020090002995A KR100996675B1 (ko) 2009-01-14 2009-01-14 열전 나노와이어 및 그의 제조방법

Publications (2)

Publication Number Publication Date
WO2010082733A2 WO2010082733A2 (ko) 2010-07-22
WO2010082733A3 true WO2010082733A3 (ko) 2010-09-30

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PCT/KR2009/007873 WO2010082733A2 (ko) 2009-01-14 2009-12-29 열전 나노와이어 및 그의 제조방법

Country Status (5)

Country Link
US (1) US20100175734A1 (ko)
EP (1) EP2224505A3 (ko)
JP (1) JP2010166053A (ko)
KR (1) KR100996675B1 (ko)
WO (1) WO2010082733A2 (ko)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101047610B1 (ko) * 2009-10-15 2011-07-07 연세대학교 산학협력단 코어/쉘 구조를 갖는 열전 나노와이어의 제조방법
CN102337524B (zh) * 2010-07-20 2013-07-17 中国科学院上海硅酸盐研究所 一种铋基硫族化合物热电薄膜的制备方法
KR101303859B1 (ko) * 2011-11-24 2013-09-04 연세대학교 산학협력단 코어/쉘 구조를 갖는 열전 나노와이어의 제조 방법
KR20130121546A (ko) * 2012-04-27 2013-11-06 삼성전자주식회사 열전성능이 증대된 열전소재 및 그 제조 방법
EP2784835B1 (en) * 2012-05-31 2016-03-16 Japan Science and Technology Agency Thermoelectric material, method for producing same, and thermoelectric conversion module using same
US20140116491A1 (en) * 2012-10-29 2014-05-01 Alphabet Energy, Inc. Bulk-size nanostructured materials and methods for making the same by sintering nanowires
CN103540999B (zh) * 2013-10-18 2016-04-27 中国科学院苏州纳米技术与纳米仿生研究所 一种成分可调的三元(Sb1-xBix)2Se3纳米线的制备方法
KR101590695B1 (ko) * 2014-03-14 2016-02-02 중앙대학교 산학협력단 정렬된 포어를 가지는 열전 박막 및 그 제조방법, 그리고 이를 가지는 열전 소자
KR101944160B1 (ko) 2016-11-24 2019-04-18 한국기술교육대학교 산학협력단 나노입자가 분산된 열전박막 제조방법 및 이에 의해 제조된 열전박막
JPWO2019124257A1 (ja) * 2017-12-20 2020-12-17 日本電気株式会社 熱電変換素子
CN110379914B (zh) * 2019-07-22 2022-08-05 合肥工业大学 一种基于液相法合成Sb2Te3-Te纳米异质结材料的热电性能提升方法
KR20220109231A (ko) * 2021-01-28 2022-08-04 삼성전자주식회사 열전소재, 이를 포함하는 열전소자 및 열전장치

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KR20070108853A (ko) * 2004-10-29 2007-11-13 메사추세츠 인스티튜트 오브 테크놀로지 열전 성능 지수가 높은 나노 복합재
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AU2002359470A1 (en) * 2001-11-26 2003-06-10 Massachusetts Institute Of Technology Thick porous anodic alumina films and nanowire arrays grown on a solid substrate
JP2006196727A (ja) * 2005-01-14 2006-07-27 Saitama Univ 熱電変換素子とその製造方法
US20100221894A1 (en) * 2006-12-28 2010-09-02 Industry-Academic Cooperation Foundation, Yonsei University Method for manufacturing nanowires by using a stress-induced growth
JP4766004B2 (ja) * 2007-06-06 2011-09-07 トヨタ自動車株式会社 熱電変換素子の製造方法
KR20090002995A (ko) 2007-07-05 2009-01-09 주식회사 엘지화학 액정 디스플레이의 백라이트 유니트용 반사판의 제조방법

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Publication number Priority date Publication date Assignee Title
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JP2008523579A (ja) * 2004-10-29 2008-07-03 マサチューセッツ・インスティチュート・オブ・テクノロジー（エムアイティー） 高い熱電性能指数を備えたナノ複合材料
US20080173344A1 (en) * 2004-12-07 2008-07-24 Minjuan Zhang Nanostructured bulk thermoelectric material
KR20080104455A (ko) * 2007-05-28 2008-12-03 연세대학교 산학협력단 인장응력을 이용한 단결정 열전 나노선 제조 방법

Also Published As

Publication number Publication date
WO2010082733A2 (ko) 2010-07-22
EP2224505A2 (en) 2010-09-01
US20100175734A1 (en) 2010-07-15
EP2224505A3 (en) 2012-12-12
KR100996675B1 (ko) 2010-11-25
KR20100083551A (ko) 2010-07-22
JP2010166053A (ja) 2010-07-29

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