WO2011028054A3 - 다공성 금속박막을 이용한 실리콘 나노선 어레이 제조방법 - Google Patents

다공성 금속박막을 이용한 실리콘 나노선 어레이 제조방법 Download PDF

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Publication number
WO2011028054A3
WO2011028054A3 PCT/KR2010/005990 KR2010005990W WO2011028054A3 WO 2011028054 A3 WO2011028054 A3 WO 2011028054A3 KR 2010005990 W KR2010005990 W KR 2010005990W WO 2011028054 A3 WO2011028054 A3 WO 2011028054A3
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WO
WIPO (PCT)
Prior art keywords
thin film
metal thin
silicon
porous metal
etching
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PCT/KR2010/005990
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English (en)
French (fr)
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WO2011028054A2 (ko
Inventor
이우
김정길
김재천
Original Assignee
한국표준과학연구원
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Filing date
Publication date
Priority claimed from KR1020090083072A external-priority patent/KR101191981B1/ko
Priority claimed from KR1020100081366A external-priority patent/KR101220522B1/ko
Application filed by 한국표준과학연구원 filed Critical 한국표준과학연구원
Priority to US13/394,093 priority Critical patent/US20120168713A1/en
Publication of WO2011028054A2 publication Critical patent/WO2011028054A2/ko
Publication of WO2011028054A3 publication Critical patent/WO2011028054A3/ko

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    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/01—Particle morphology depicted by an image
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/10—Particle morphology extending in one dimension, e.g. needle-like
    • C01P2004/16—Nanowires or nanorods, i.e. solid nanofibres with two nearly equal dimensions between 1-100 nanometer
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/12—Surface area

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Inorganic Chemistry (AREA)
  • Composite Materials (AREA)
  • Micromachines (AREA)
  • Silicon Compounds (AREA)
  • Weting (AREA)
  • Catalysts (AREA)

Abstract

본 발명에서는 (a) 다공성 금속박막을 준비하는 단계, (b) 상기 다공성 금속박막을 실리콘 기판에 접촉시키는 단계 및 (c) 실리콘 에칭액으로 상기 실리콘 기판을 에칭시키는 단계를 포함하는 실리콘 나노선 어레이 제조방법이 개시된다. 본 발명에 따르면 상기 다공성 금속박막을 촉매로 하여 수직 정렬된 대면적의 실리콘 나노선을 제조할 수 있으며, 실리콘기판을 습식에칭하는 단계에서 실리콘 에칭액의 조성, 에칭온도 등의 에칭조건을 조절하여 종래의 나노선과는 형상 및 결정학적 배향에서 차별성을 갖는 다공성 구조, 다공성 마디 구조, 경사진 구조 및 지그재그 구조의 나노선을 제조할 수 있다.
PCT/KR2010/005990 2009-09-03 2010-09-03 다공성 금속박막을 이용한 실리콘 나노선 어레이 제조방법 WO2011028054A2 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US13/394,093 US20120168713A1 (en) 2009-09-03 2010-09-03 Method for manufacturing a silicon nanowire array using a porous metal film

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR10-2009-0083072 2009-09-03
KR1020090083072A KR101191981B1 (ko) 2009-09-03 2009-09-03 반도체 나노선 어레이 및 그 제조방법
KR10-2010-0081366 2010-08-23
KR1020100081366A KR101220522B1 (ko) 2010-08-23 2010-08-23 다공성 다층 금속박막을 이용한 실리콘 나노선 어레이 제조방법

Publications (2)

Publication Number Publication Date
WO2011028054A2 WO2011028054A2 (ko) 2011-03-10
WO2011028054A3 true WO2011028054A3 (ko) 2011-07-21

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2010/005990 WO2011028054A2 (ko) 2009-09-03 2010-09-03 다공성 금속박막을 이용한 실리콘 나노선 어레이 제조방법

Country Status (2)

Country Link
US (1) US20120168713A1 (ko)
WO (1) WO2011028054A2 (ko)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101316375B1 (ko) * 2011-08-19 2013-10-08 포항공과대학교 산학협력단 태양전지 및 이의 제조방법
CN102694075A (zh) * 2012-06-12 2012-09-26 东华大学 一种电场下倾斜硅纳米线阵列的制备方法
PL400689A1 (pl) 2012-09-07 2014-03-17 Instytut Elektrotechniki Sposób wytwarzania nanodrutów magnetycznych
CN103050378B (zh) * 2012-11-19 2016-01-06 华北电力大学 一种易于大面积分离的硅纳米线阵列的制备方法
KR101409387B1 (ko) * 2013-01-16 2014-06-20 아주대학교산학협력단 경사 형태의 구리 나노 로드 제작방법
EP3062907A4 (en) 2013-10-30 2017-08-16 Hewlett-Packard Development Company, L.P. Island etched filter passages
EP3062918B1 (en) 2013-10-30 2021-03-17 Hewlett-Packard Development Company, L.P. Nonparallel island etching
KR101620981B1 (ko) * 2014-11-11 2016-05-16 연세대학교 산학협력단 기판 식각 방법
US9468989B2 (en) * 2015-02-26 2016-10-18 Northrop Grumman Systems Corporation High-conductivity bonding of metal nanowire arrays
WO2017023394A2 (en) * 2015-05-13 2017-02-09 Stu.Unm NANOWIRE BENDING FOR PLANAR DEVICE PROCESS ON (001) Si SUBSTRATES
US9893046B2 (en) * 2016-07-08 2018-02-13 Taiwan Semiconductor Manufacturing Co., Ltd. Thinning process using metal-assisted chemical etching
CN106672974B (zh) * 2016-12-15 2018-11-13 西南交通大学 一种制备硅微纳分级结构的新方法
CN114132890A (zh) * 2021-11-29 2022-03-04 西安工业大学 一种制备有序硅纳米线阵列的方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007501525A (ja) * 2003-08-04 2007-01-25 ナノシス・インコーポレイテッド ナノワイヤ複合体およびこれらに由来する電子基板を作製するためのシステムおよび方法
US7450227B2 (en) * 2004-09-22 2008-11-11 The Penn State Research Foundation Surface enhanced Raman spectroscopy (SERS) substrates exhibiting uniform high enhancement and stability
DE112005002798T5 (de) * 2004-11-10 2007-09-27 Dai Nippon Printing Co., Ltd. Verfahren zur Herstellung eines Metalloxidfilms
WO2008062925A1 (en) * 2006-11-21 2008-05-29 Hak Sik Joo Method for manufacturing open cell microporous metal

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
GEYER, NADINE ET AL.: "Sub-20 nm Si/Ge superlattice nanowires by metal-assisted etching", NANO LETTERS, vol. 9, no. 9, 2009, pages 3106 - 3110 *
LEW, KOK-KEONG ET AL.: "Template-directed vapor-liquid-solid growth of silicon nanowires", J. VAC. SIC. TECHNOL. B., vol. 20, no. 1, January 2002 (2002-01-01), pages 389 - 392 *
YAO, ZHIWEI ET AL.: "The fabrication of ordered nanoporous metal films based on high field anodic alumina and their selected transmission enhancement", NANOTECHNOLOGY, vol. 19, 2008, pages 465705-1 - 465705-7, XP020144862 *
ZHANG, MING-LIANG ET AL.: "Preparation of large-area uniform silicon nanowires arrays through metal-assisted chemical etching", J. PHYS. CHEM. C., vol. 112, 2008, pages 4444 - 4450 *

Also Published As

Publication number Publication date
US20120168713A1 (en) 2012-07-05
WO2011028054A2 (ko) 2011-03-10

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