WO2012074247A3 - 태양 전지 제조 방법 및 이에 의해 제조된 태양 전지 - Google Patents

태양 전지 제조 방법 및 이에 의해 제조된 태양 전지 Download PDF

Info

Publication number
WO2012074247A3
WO2012074247A3 PCT/KR2011/009060 KR2011009060W WO2012074247A3 WO 2012074247 A3 WO2012074247 A3 WO 2012074247A3 KR 2011009060 W KR2011009060 W KR 2011009060W WO 2012074247 A3 WO2012074247 A3 WO 2012074247A3
Authority
WO
WIPO (PCT)
Prior art keywords
solar cells
manufacturing
flexible
manufactured
cigs
Prior art date
Application number
PCT/KR2011/009060
Other languages
English (en)
French (fr)
Other versions
WO2012074247A2 (ko
Inventor
박래만
Original Assignee
한국전자통신연구원
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020110117534A external-priority patent/KR20120059361A/ko
Application filed by 한국전자통신연구원 filed Critical 한국전자통신연구원
Priority to US13/989,967 priority Critical patent/US20130240039A1/en
Publication of WO2012074247A2 publication Critical patent/WO2012074247A2/ko
Publication of WO2012074247A3 publication Critical patent/WO2012074247A3/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1892—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03923—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including AIBIIICVI compound materials, e.g. CIS, CIGS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03926—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate comprising a flexible substrate
    • H01L31/03928—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate comprising a flexible substrate including AIBIIICVI compound, e.g. CIS, CIGS deposited on metal or polymer foils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1892—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates
    • H01L31/1896—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates for thin-film semiconductors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Photovoltaic Devices (AREA)

Abstract

본 발명은 태양 전지 제조 방법 및 이에 의해 제조된 태양 전지를 제공한다. 이 방법은 희생기판 상에 고온의 공정 온도에서 CIGS 광흡수층을 비롯한 여러 층들을 형성한 후에, 간단히 유연 기판을 제 2 전극 상에 부착시킴으로써 간단하게 유연한 태양 전지를 제조할 수 있다. 또한 유연 기판을 부착한 후에 상기 분리막을 레이저나 선택적 습식 식각을 이용하여 제거한다. 이로써, 고효율을 가지면서 유연한 CIGS 태양전지를 구현할 수 있다.
PCT/KR2011/009060 2010-11-30 2011-11-25 태양 전지 제조 방법 및 이에 의해 제조된 태양 전지 WO2012074247A2 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US13/989,967 US20130240039A1 (en) 2010-11-30 2011-11-25 Method for manufacturing solar cells and solar cells manufactured thereby

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR10-2010-0120775 2010-11-30
KR20100120775 2010-11-30
KR1020110117534A KR20120059361A (ko) 2010-11-30 2011-11-11 태양 전지 제조 방법 및 이에 의해 제조된 태양 전지
KR10-2011-0117534 2011-11-11

Publications (2)

Publication Number Publication Date
WO2012074247A2 WO2012074247A2 (ko) 2012-06-07
WO2012074247A3 true WO2012074247A3 (ko) 2012-10-04

Family

ID=46172369

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2011/009060 WO2012074247A2 (ko) 2010-11-30 2011-11-25 태양 전지 제조 방법 및 이에 의해 제조된 태양 전지

Country Status (2)

Country Link
US (1) US20130240039A1 (ko)
WO (1) WO2012074247A2 (ko)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101486250B1 (ko) * 2013-07-08 2015-02-05 주식회사 레이언스 이미지센서와 그 제조방법
KR102175353B1 (ko) * 2014-05-30 2020-11-09 한국전자통신연구원 반도체 소자 및 그 제조 방법
CN112786723B (zh) * 2021-01-27 2022-11-15 重庆神华薄膜太阳能科技有限公司 柔性薄膜太阳能电池组件及其制备方法
WO2023243546A1 (ja) * 2022-06-14 2023-12-21 Ａｇｃ株式会社 樹脂組成物、物品、及びフレキシブル透明電子デバイスの製造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070193623A1 (en) * 2006-02-22 2007-08-23 Guardian Industries Corp. Electrode structure for use in electronic device and method of making same
US20080216885A1 (en) * 2007-03-06 2008-09-11 Sergey Frolov Spectrally adaptive multijunction photovoltaic thin film device and method of producing same
US20090269877A1 (en) * 2008-04-28 2009-10-29 Mustafa Pinarbasi Method and apparatus for achieving low resistance contact to a metal based thin film solar cell
US20100009492A1 (en) * 2008-07-11 2010-01-14 Duy-Phach Vu Method for production of thin semiconductor solar cells and integrated circuits

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5334645B2 (ja) * 2009-03-31 2013-11-06 富士フイルム株式会社 可撓性太陽電池モジュール

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070193623A1 (en) * 2006-02-22 2007-08-23 Guardian Industries Corp. Electrode structure for use in electronic device and method of making same
US20080216885A1 (en) * 2007-03-06 2008-09-11 Sergey Frolov Spectrally adaptive multijunction photovoltaic thin film device and method of producing same
US20090269877A1 (en) * 2008-04-28 2009-10-29 Mustafa Pinarbasi Method and apparatus for achieving low resistance contact to a metal based thin film solar cell
US20100009492A1 (en) * 2008-07-11 2010-01-14 Duy-Phach Vu Method for production of thin semiconductor solar cells and integrated circuits

Also Published As

Publication number Publication date
US20130240039A1 (en) 2013-09-19
WO2012074247A2 (ko) 2012-06-07

Similar Documents

Publication Publication Date Title
MY162679A (en) Thin silicon solar cell and method of manufacture
WO2012057504A3 (ko) 태양전지 및 그 제조 방법
MY165969A (en) High-productivity porous semiconductor manufacturing equipment
WO2011102677A3 (ko) 나노구조 무기-유기 이종 접합 태양전지의 제조방법
WO2010076791A3 (en) Luminescent solar concentrator
WO2011099831A3 (ko) 그래핀을 이용한 유연성 투명 발열체 및 이의 제조 방법
WO2009119995A3 (en) Method of texturing solar cell and method of manufacturing solar cell
WO2012003038A3 (en) Method of fabricating a solar cell with a tunnel dielectric layer
WO2011122853A3 (ko) 태양광 발전장치 및 이의 제조방법
EP2238610A4 (en) METHOD OF ACIDIFYING AN ASYMMETRIC WAFER, SOLAR CELL WITH ASYMMETRICALLY APPLIED WAFER, AND METHOD FOR THE PRODUCTION THEREOF
WO2010018961A3 (ko) 태양전지 및 그 제조방법
WO2012015151A3 (ko) 태양전지 및 이의 제조방법
WO2011043610A3 (ko) 태양광 발전장치 및 이의 제조방법
WO2008147113A3 (en) High efficiency solar cell, method of fabricating the same and apparatus for fabricating the same
WO2011040780A3 (ko) 태양광 발전장치 및 이의 제조방법
WO2009077103A8 (en) Thin-film solar cell and process for its manufacture
WO2013003828A3 (en) A tandem solar cell using a silicon microwire array and amorphous silicon photovoltaic layer
WO2015177748A3 (en) Fabricating thin-film optoelectronic devices with modified surface
WO2015047504A3 (en) Coating for aircraft fuselage surfaces to produce electricity for mission-critical systems on military aircraft
WO2012165873A3 (en) Solar cell apparatus and method of fabricating the same
WO2011092327A3 (de) Iii-v-halbleiter-solarzelle
WO2012074247A3 (ko) 태양 전지 제조 방법 및 이에 의해 제조된 태양 전지
WO2011002212A3 (ko) 태양광 발전장치 및 이의 제조방법
WO2012157853A3 (ko) 실리콘 태양전지 및 그 제조방법
WO2012053763A3 (ko) 광산란층을 구비한 염료감응 태양전지모듈 및 그 제조 방법

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 11845476

Country of ref document: EP

Kind code of ref document: A2

WWE Wipo information: entry into national phase

Ref document number: 13989967

Country of ref document: US

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 11845476

Country of ref document: EP

Kind code of ref document: A2