WO2012057504A3 - 태양전지 및 그 제조 방법 - Google Patents

태양전지 및 그 제조 방법 Download PDF

Info

Publication number
WO2012057504A3
WO2012057504A3 PCT/KR2011/007993 KR2011007993W WO2012057504A3 WO 2012057504 A3 WO2012057504 A3 WO 2012057504A3 KR 2011007993 W KR2011007993 W KR 2011007993W WO 2012057504 A3 WO2012057504 A3 WO 2012057504A3
Authority
WO
WIPO (PCT)
Prior art keywords
solar cell
manufacturing same
microstructure
carbon structure
charge separation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2011/007993
Other languages
English (en)
French (fr)
Other versions
WO2012057504A2 (ko
Inventor
이규철
김용진
이철호
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SNU R&DB Foundation
Original Assignee
SNU R&DB Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SNU R&DB Foundation filed Critical SNU R&DB Foundation
Priority to US13/881,479 priority Critical patent/US9419158B2/en
Publication of WO2012057504A2 publication Critical patent/WO2012057504A2/ko
Publication of WO2012057504A3 publication Critical patent/WO2012057504A3/ko
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/707—Surface textures, e.g. pyramid structures of the substrates or of layers on substrates, e.g. textured ITO layer on a glass substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/139—Manufacture or treatment of devices covered by this subclass using temporary substrates
    • H10F71/1395—Manufacture or treatment of devices covered by this subclass using temporary substrates for thin-film devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/147—Shapes of bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/148—Shapes of potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H10F77/1698—Thin semiconductor films on metallic or insulating substrates the metallic or insulating substrates being flexible
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Electromagnetism (AREA)
  • Photovoltaic Devices (AREA)

Abstract

본원은 탄소구조체층과, 상기 탄소구조체층 상에 형성되어 있는 미세 구조물과, 상기 미세 구조물 표면에 형성되어 있는, 전하분리접합부를 포함하는 전하분리층을 포함하는 태양전지 및 이의 제조방법을 제공한다.
PCT/KR2011/007993 2010-10-25 2011-10-25 태양전지 및 그 제조 방법 Ceased WO2012057504A2 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US13/881,479 US9419158B2 (en) 2010-10-25 2011-10-25 Solar cell and method for manufacturing same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020100103904A KR101142545B1 (ko) 2010-10-25 2010-10-25 태양전지 및 그 제조 방법
KR10-2010-0103904 2010-10-25

Publications (2)

Publication Number Publication Date
WO2012057504A2 WO2012057504A2 (ko) 2012-05-03
WO2012057504A3 true WO2012057504A3 (ko) 2012-07-26

Family

ID=45994543

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2011/007993 Ceased WO2012057504A2 (ko) 2010-10-25 2011-10-25 태양전지 및 그 제조 방법

Country Status (3)

Country Link
US (1) US9419158B2 (ko)
KR (1) KR101142545B1 (ko)
WO (1) WO2012057504A2 (ko)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB201021112D0 (en) 2010-12-13 2011-01-26 Ntnu Technology Transfer As Nanowires
GB201200355D0 (en) 2012-01-10 2012-02-22 Norwegian Univ Sci & Tech Ntnu Nanowires
GB201211038D0 (en) * 2012-06-21 2012-08-01 Norwegian Univ Sci & Tech Ntnu Solar cells
KR101519703B1 (ko) * 2012-11-20 2015-05-21 현대자동차주식회사 태양전지 및 이의 제조방법
KR101405557B1 (ko) * 2012-12-21 2014-06-11 경희대학교 산학협력단 그래핀 태양전지
GB201311101D0 (en) 2013-06-21 2013-08-07 Norwegian Univ Sci & Tech Ntnu Semiconducting Films
GB2517186A (en) * 2013-08-14 2015-02-18 Norwegian University Of Science And Technology Radial P-N junction nanowire solar cells
KR101515301B1 (ko) 2013-09-17 2015-04-27 전남대학교산학협력단 레이저 리소그래피를 이용하여 형성되는 3차원 구조의 광흡수층을 가지는 태양전지 제조방법
CA2992156A1 (en) 2015-07-13 2017-01-16 Crayonano As Nanowires or nanopyramids grown on graphitic substrate
CA2992154A1 (en) * 2015-07-13 2017-01-19 Crayonano As Nanowires/nanopyramids shaped light emitting diodes and photodetectors
US10714337B2 (en) 2015-07-31 2020-07-14 Crayonano As Process for growing nanowires or nanopyramids on graphitic substrates
GB201705755D0 (en) 2017-04-10 2017-05-24 Norwegian Univ Of Science And Tech (Ntnu) Nanostructure
GB201913701D0 (en) 2019-09-23 2019-11-06 Crayonano As Composition of matter
CN111952458A (zh) * 2020-08-24 2020-11-17 中国科学院半导体研究所 曲面异质结太阳电池及其制作方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007027625A (ja) * 2005-07-21 2007-02-01 Matsushita Electric Works Ltd 有機太陽電池及びその製造方法
JP2007115806A (ja) * 2005-10-19 2007-05-10 Sumitomo Metal Mining Co Ltd カーボンナノチューブを用いた太陽電池
KR100809248B1 (ko) * 2007-03-14 2008-02-29 삼성전기주식회사 반도체 이종구조 나노선을 이용한 광기전력 소자 및 그제조방법
JP2010028092A (ja) * 2008-07-16 2010-02-04 Honda Motor Co Ltd ナノワイヤ太陽電池及びその製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080110486A1 (en) * 2006-11-15 2008-05-15 General Electric Company Amorphous-crystalline tandem nanostructured solar cells
KR20080081605A (ko) * 2007-03-06 2008-09-10 삼성전자주식회사 절연 모기판에 얼라인 마크를 형성하는 단계를 포함하는액정 표시 장치의 제조 방법
US20100012190A1 (en) * 2008-07-16 2010-01-21 Hajime Goto Nanowire photovoltaic cells and manufacture method thereof
KR101040956B1 (ko) * 2009-02-26 2011-06-16 전자부품연구원 산화아연 나노와이어를 이용한 박막 실리콘 태양전지 및 그의 제조방법
US10164135B2 (en) * 2009-08-07 2018-12-25 Guardian Glass, LLC Electronic device including graphene-based layer(s), and/or method or making the same

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007027625A (ja) * 2005-07-21 2007-02-01 Matsushita Electric Works Ltd 有機太陽電池及びその製造方法
JP2007115806A (ja) * 2005-10-19 2007-05-10 Sumitomo Metal Mining Co Ltd カーボンナノチューブを用いた太陽電池
KR100809248B1 (ko) * 2007-03-14 2008-02-29 삼성전기주식회사 반도체 이종구조 나노선을 이용한 광기전력 소자 및 그제조방법
JP2010028092A (ja) * 2008-07-16 2010-02-04 Honda Motor Co Ltd ナノワイヤ太陽電池及びその製造方法

Also Published As

Publication number Publication date
US20130213470A1 (en) 2013-08-22
KR101142545B1 (ko) 2012-05-08
KR20120042282A (ko) 2012-05-03
WO2012057504A2 (ko) 2012-05-03
US9419158B2 (en) 2016-08-16

Similar Documents

Publication Publication Date Title
WO2012057504A3 (ko) 태양전지 및 그 제조 방법
EP2612369A4 (en) Solar cell and method for manufacturing the same
EP2616401A4 (en) Method, process and fabrication technology for high-efficency low-cost crytalline silicon solar cells
EP2650059A4 (en) Steel foil for solar cell substrate, solar cell substrate, solar cell, and methods for manufacturing the steel foil and the solar cell
EP4084093C0 (en) SOLAR CELL AND ITS MANUFACTURING METHOD
WO2008089043A3 (en) Multi-junction solar cells and methods and apparatuses for forming the same
WO2012003038A3 (en) Method of fabricating a solar cell with a tunnel dielectric layer
EP2619806A4 (en) Method of fabricating an emitter region of a solar cell
WO2011138994A1 (ko) 실리콘 나노 와이어의 형성방법 및 이를 이용한 리튬 이차 전지의 제조방법
EP2656395A4 (en) Solar cell and manufacturing method of the same
WO2011032717A3 (de) Serielle verschaltung von dünnschichtsolarzellen
WO2013032194A3 (ko) 상호 연결 어셈블리 및 전지모듈에서 상호 연결 어셈블리를 형성하는 방법
EP2660873A4 (en) Method for manufacturing solar cell and solar cell
EP2615665A4 (en) Separator, production method for same and electrochemical device equipped with same
WO2013003828A3 (en) A tandem solar cell using a silicon microwire array and amorphous silicon photovoltaic layer
EP2590229A4 (en) Organic solar cell and manufacturing method thereof
EP2713403A3 (en) Solar cell and method of manufacturing the same
EP3379627A4 (en) Gas diffusion layer for fuel cell, method for manufacturing said layer, membrane-electrode assembly, and fuel cell
WO2013134762A3 (en) Photovoltaic device and method of manufacture
EP2618414A4 (en) Membrane electrode assembly, method for producing membrane electrode assembly, and fuel battery
EP2600421A4 (en) Solar cell and method for manufacturing same
WO2013084160A3 (en) Graphene composite and a method of manufacturing a graphene composite
WO2014042447A3 (ko) 광흡수 구조체가 구비된 태양전지의 제조방법
WO2012057506A3 (ko) 태양전지 및 그 제조 방법
WO2011002211A3 (ko) 태양전지 및 이의 제조방법

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 11836596

Country of ref document: EP

Kind code of ref document: A2

NENP Non-entry into the national phase

Ref country code: DE

WWE Wipo information: entry into national phase

Ref document number: 13881479

Country of ref document: US

122 Ep: pct application non-entry in european phase

Ref document number: 11836596

Country of ref document: EP

Kind code of ref document: A2