WO2012057504A3 - 태양전지 및 그 제조 방법 - Google Patents

태양전지 및 그 제조 방법 Download PDF

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Publication number
WO2012057504A3
WO2012057504A3 PCT/KR2011/007993 KR2011007993W WO2012057504A3 WO 2012057504 A3 WO2012057504 A3 WO 2012057504A3 KR 2011007993 W KR2011007993 W KR 2011007993W WO 2012057504 A3 WO2012057504 A3 WO 2012057504A3
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WO
WIPO (PCT)
Prior art keywords
solar cell
manufacturing same
microstructure
carbon structure
charge separation
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PCT/KR2011/007993
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English (en)
French (fr)
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WO2012057504A2 (ko
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이규철
김용진
이철호
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서울대학교산학협력단
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Priority to US13/881,479 priority Critical patent/US9419158B2/en
Publication of WO2012057504A2 publication Critical patent/WO2012057504A2/ko
Publication of WO2012057504A3 publication Critical patent/WO2012057504A3/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/035281—Shape of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/03529—Shape of the potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03926—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate comprising a flexible substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1892—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates
    • H01L31/1896—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates for thin-film semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

본원은 탄소구조체층과, 상기 탄소구조체층 상에 형성되어 있는 미세 구조물과, 상기 미세 구조물 표면에 형성되어 있는, 전하분리접합부를 포함하는 전하분리층을 포함하는 태양전지 및 이의 제조방법을 제공한다.
PCT/KR2011/007993 2010-10-25 2011-10-25 태양전지 및 그 제조 방법 WO2012057504A2 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US13/881,479 US9419158B2 (en) 2010-10-25 2011-10-25 Solar cell and method for manufacturing same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2010-0103904 2010-10-25
KR1020100103904A KR101142545B1 (ko) 2010-10-25 2010-10-25 태양전지 및 그 제조 방법

Publications (2)

Publication Number Publication Date
WO2012057504A2 WO2012057504A2 (ko) 2012-05-03
WO2012057504A3 true WO2012057504A3 (ko) 2012-07-26

Family

ID=45994543

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2011/007993 WO2012057504A2 (ko) 2010-10-25 2011-10-25 태양전지 및 그 제조 방법

Country Status (3)

Country Link
US (1) US9419158B2 (ko)
KR (1) KR101142545B1 (ko)
WO (1) WO2012057504A2 (ko)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB201021112D0 (en) 2010-12-13 2011-01-26 Ntnu Technology Transfer As Nanowires
GB201200355D0 (en) 2012-01-10 2012-02-22 Norwegian Univ Sci & Tech Ntnu Nanowires
GB201211038D0 (en) 2012-06-21 2012-08-01 Norwegian Univ Sci & Tech Ntnu Solar cells
KR101519703B1 (ko) * 2012-11-20 2015-05-21 현대자동차주식회사 태양전지 및 이의 제조방법
KR101405557B1 (ko) * 2012-12-21 2014-06-11 경희대학교 산학협력단 그래핀 태양전지
GB201311101D0 (en) 2013-06-21 2013-08-07 Norwegian Univ Sci & Tech Ntnu Semiconducting Films
GB2517186A (en) * 2013-08-14 2015-02-18 Norwegian University Of Science And Technology Radial P-N junction nanowire solar cells
KR101515301B1 (ko) 2013-09-17 2015-04-27 전남대학교산학협력단 레이저 리소그래피를 이용하여 형성되는 3차원 구조의 광흡수층을 가지는 태양전지 제조방법
AU2016292850B2 (en) 2015-07-13 2019-05-16 Crayonano As Nanowires or nanopyramids grown on graphitic substrate
BR112018000603A2 (pt) * 2015-07-13 2018-09-11 Crayonano As fotodetetores e diodos emitindo luz com forma de nanofios/nanopirâmides
CA2993884A1 (en) 2015-07-31 2017-02-09 Crayonano As Process for growing nanowires or nanopyramids on graphitic substrates
GB201705755D0 (en) 2017-04-10 2017-05-24 Norwegian Univ Of Science And Tech (Ntnu) Nanostructure
CN111952458A (zh) * 2020-08-24 2020-11-17 中国科学院半导体研究所 曲面异质结太阳电池及其制作方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007027625A (ja) * 2005-07-21 2007-02-01 Matsushita Electric Works Ltd 有機太陽電池及びその製造方法
JP2007115806A (ja) * 2005-10-19 2007-05-10 Sumitomo Metal Mining Co Ltd カーボンナノチューブを用いた太陽電池
KR100809248B1 (ko) * 2007-03-14 2008-02-29 삼성전기주식회사 반도체 이종구조 나노선을 이용한 광기전력 소자 및 그제조방법
JP2010028092A (ja) * 2008-07-16 2010-02-04 Honda Motor Co Ltd ナノワイヤ太陽電池及びその製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080110486A1 (en) * 2006-11-15 2008-05-15 General Electric Company Amorphous-crystalline tandem nanostructured solar cells
KR20080081605A (ko) * 2007-03-06 2008-09-10 삼성전자주식회사 절연 모기판에 얼라인 마크를 형성하는 단계를 포함하는액정 표시 장치의 제조 방법
US20100012190A1 (en) * 2008-07-16 2010-01-21 Hajime Goto Nanowire photovoltaic cells and manufacture method thereof
KR101040956B1 (ko) * 2009-02-26 2011-06-16 전자부품연구원 산화아연 나노와이어를 이용한 박막 실리콘 태양전지 및 그의 제조방법
US10164135B2 (en) * 2009-08-07 2018-12-25 Guardian Glass, LLC Electronic device including graphene-based layer(s), and/or method or making the same

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007027625A (ja) * 2005-07-21 2007-02-01 Matsushita Electric Works Ltd 有機太陽電池及びその製造方法
JP2007115806A (ja) * 2005-10-19 2007-05-10 Sumitomo Metal Mining Co Ltd カーボンナノチューブを用いた太陽電池
KR100809248B1 (ko) * 2007-03-14 2008-02-29 삼성전기주식회사 반도체 이종구조 나노선을 이용한 광기전력 소자 및 그제조방법
JP2010028092A (ja) * 2008-07-16 2010-02-04 Honda Motor Co Ltd ナノワイヤ太陽電池及びその製造方法

Also Published As

Publication number Publication date
US20130213470A1 (en) 2013-08-22
WO2012057504A2 (ko) 2012-05-03
KR20120042282A (ko) 2012-05-03
US9419158B2 (en) 2016-08-16
KR101142545B1 (ko) 2012-05-08

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