WO2011102677A3 - 나노구조 무기-유기 이종 접합 태양전지의 제조방법 - Google Patents

나노구조 무기-유기 이종 접합 태양전지의 제조방법 Download PDF

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Publication number
WO2011102677A3
WO2011102677A3 PCT/KR2011/001099 KR2011001099W WO2011102677A3 WO 2011102677 A3 WO2011102677 A3 WO 2011102677A3 KR 2011001099 W KR2011001099 W KR 2011001099W WO 2011102677 A3 WO2011102677 A3 WO 2011102677A3
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WO
WIPO (PCT)
Prior art keywords
transporting layer
solar cell
manufacturing
porous electron
heterojunction solar
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PCT/KR2011/001099
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English (en)
French (fr)
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WO2011102677A2 (ko
Inventor
석상일
임상혁
장정아
이재휘
이용희
김희중
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한국화학연구원
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Application filed by 한국화학연구원 filed Critical 한국화학연구원
Priority to JP2012553817A priority Critical patent/JP5775886B2/ja
Priority to US13/580,008 priority patent/US9059418B2/en
Priority to CN201180010271.XA priority patent/CN102834929B/zh
Priority to EP11744919.9A priority patent/EP2560212B1/en
Publication of WO2011102677A2 publication Critical patent/WO2011102677A2/ko
Publication of WO2011102677A3 publication Critical patent/WO2011102677A3/ko

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
    • H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
    • H10K30/151—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2 the wide bandgap semiconductor comprising titanium oxide, e.g. TiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/542—Dye sensitized solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)
  • Hybrid Cells (AREA)

Abstract

본 발명은 매우 높은 효율을 가지며, 안정성이 우수하고, 저가의 원료로 대량 생산 가능하여 태양전지의 상업화가 용이한 신규한 구조의 태양전지 제조방법에 관한 것으로, 상세하게 a) 금속산화물 입자를 함유하는 슬러리를 도포하고 열처리하여 다공성 전자 전달층(electron transporting layer)을 형성하는 단계; b) 상기 다공성 전자 전달층의 금속산화물 입자 표면에 무기 반도체를 형성하는 단계; 및 c) 상기 무기 반도체가 형성된 다공성 전자 전달층에 유기 광전 물질(organic photovoltaic material)을 함유하는 용액을 함침하여 정공 전달층(hole transporting layer)을 형성하는 단계;를 포함하여 수행된다.
PCT/KR2011/001099 2010-02-18 2011-02-18 나노구조 무기-유기 이종 접합 태양전지의 제조방법 WO2011102677A2 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2012553817A JP5775886B2 (ja) 2010-02-18 2011-02-18 ナノ構造無機−有機ヘテロ接合太陽電池の製造方法
US13/580,008 US9059418B2 (en) 2010-02-18 2011-02-18 Method for manufacturing a nanostructured inorganic/organic heterojunction solar cell
CN201180010271.XA CN102834929B (zh) 2010-02-18 2011-02-18 纳米结构无机-有机异质结太阳能电池的制备方法
EP11744919.9A EP2560212B1 (en) 2010-02-18 2011-02-18 Method for manufacturing a nanostructured inorganic/organic heterojunction solar cell

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR20100014674 2010-02-18
KR10-2010-0014674 2010-02-18

Publications (2)

Publication Number Publication Date
WO2011102677A2 WO2011102677A2 (ko) 2011-08-25
WO2011102677A3 true WO2011102677A3 (ko) 2012-01-12

Family

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PCT/KR2011/001099 WO2011102677A2 (ko) 2010-02-18 2011-02-18 나노구조 무기-유기 이종 접합 태양전지의 제조방법

Country Status (6)

Country Link
US (1) US9059418B2 (ko)
EP (1) EP2560212B1 (ko)
JP (1) JP5775886B2 (ko)
KR (1) KR101168227B1 (ko)
CN (1) CN102834929B (ko)
WO (1) WO2011102677A2 (ko)

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KR101282041B1 (ko) * 2011-10-31 2013-07-04 한국화학연구원 고효율 무／유기 이종접합 무기반도체 감응형 광전소자 및 그 제조방법
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CN102834929A (zh) 2012-12-19
EP2560212A4 (en) 2014-11-05
WO2011102677A2 (ko) 2011-08-25
EP2560212A2 (en) 2013-02-20
JP5775886B2 (ja) 2015-09-09
KR101168227B1 (ko) 2012-07-30
KR20110095215A (ko) 2011-08-24
US9059418B2 (en) 2015-06-16
JP2013520767A (ja) 2013-06-06
CN102834929B (zh) 2015-06-03
EP2560212B1 (en) 2019-06-12
US20130065354A1 (en) 2013-03-14

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