WO2012015151A3 - 태양전지 및 이의 제조방법 - Google Patents

태양전지 및 이의 제조방법 Download PDF

Info

Publication number
WO2012015151A3
WO2012015151A3 PCT/KR2011/003125 KR2011003125W WO2012015151A3 WO 2012015151 A3 WO2012015151 A3 WO 2012015151A3 KR 2011003125 W KR2011003125 W KR 2011003125W WO 2012015151 A3 WO2012015151 A3 WO 2012015151A3
Authority
WO
WIPO (PCT)
Prior art keywords
solar cell
manufacturing same
layer disposed
substrate
light absorption
Prior art date
Application number
PCT/KR2011/003125
Other languages
English (en)
French (fr)
Other versions
WO2012015151A2 (ko
Inventor
최철환
Original Assignee
엘지이노텍주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 엘지이노텍주식회사 filed Critical 엘지이노텍주식회사
Priority to EP11812682.0A priority Critical patent/EP2600421A4/en
Priority to CN201180037319.6A priority patent/CN103038895B/zh
Priority to US13/639,274 priority patent/US8829341B2/en
Publication of WO2012015151A2 publication Critical patent/WO2012015151A2/ko
Publication of WO2012015151A3 publication Critical patent/WO2012015151A3/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H01L31/022483—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of zinc oxide [ZnO]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y99/00—Subject matter not provided for in other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Photovoltaic Devices (AREA)

Abstract

태양전지가 개시된다. 태양전지는 기판; 상기 기판 상에 배치되는 이면전극층; 상기 이면전극층 상에 배치되는 광 흡수층; 및 상기 광 흡수층 상에 배치되는 윈도우층을 포함하며, 상기 윈도우층은 다수 개의 도전성 입자들을 포함한다. 도전성 입자들에 의해서, 윈도우층의 광학적 및 전기적인 특성이 향상된다.
PCT/KR2011/003125 2010-07-30 2011-04-27 태양전지 및 이의 제조방법 WO2012015151A2 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP11812682.0A EP2600421A4 (en) 2010-07-30 2011-04-27 Solar cell and method for manufacturing same
CN201180037319.6A CN103038895B (zh) 2010-07-30 2011-04-27 太阳能电池及其制造方法
US13/639,274 US8829341B2 (en) 2010-07-30 2011-04-27 Solar cell and method for manufacturing same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2010-0074414 2010-07-30
KR1020100074414A KR101154577B1 (ko) 2010-07-30 2010-07-30 태양전지 및 이의 제조방법

Publications (2)

Publication Number Publication Date
WO2012015151A2 WO2012015151A2 (ko) 2012-02-02
WO2012015151A3 true WO2012015151A3 (ko) 2012-05-10

Family

ID=45530553

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2011/003125 WO2012015151A2 (ko) 2010-07-30 2011-04-27 태양전지 및 이의 제조방법

Country Status (5)

Country Link
US (1) US8829341B2 (ko)
EP (1) EP2600421A4 (ko)
KR (1) KR101154577B1 (ko)
CN (1) CN103038895B (ko)
WO (1) WO2012015151A2 (ko)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101382943B1 (ko) * 2012-04-18 2014-04-09 엘지이노텍 주식회사 태양전지 및 이의 제조방법
KR101371774B1 (ko) * 2012-04-26 2014-03-10 엘지이노텍 주식회사 태양광 발전장치 및 이의 제조방법
CN103066136A (zh) * 2012-12-27 2013-04-24 东南大学 一种提高量子效率的光转换薄膜
KR102100370B1 (ko) * 2013-04-26 2020-04-14 삼성디스플레이 주식회사 나노 결정 형성 방법 및 나노 결정의 형성된 박막을 포함한 유기 발광 표시 장치의 제조 방법
KR101602922B1 (ko) * 2014-11-10 2016-03-14 한밭대학교 산학협력단 투명 컬러 태양전지
CN106057924B (zh) * 2016-08-01 2017-08-01 河北大学 一种复合层电极及其制备方法以及使用该复合层电极的透光太阳能电池
KR101843292B1 (ko) 2016-11-24 2018-03-28 전북대학교산학협력단 박막 태양전지 및 그 제조 방법
CN111640815B (zh) * 2020-05-29 2024-03-01 中国科学院上海微系统与信息技术研究所 一种高效率双面受光柔性硅异质结太阳电池的制备方法
CN114188352B (zh) * 2021-12-01 2024-01-30 深圳市华星光电半导体显示技术有限公司 显示基板、显示面板及显示基板的制作方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20090029495A (ko) * 2007-09-18 2009-03-23 엘지전자 주식회사 태양전지 박막조성용 잉크와 그 제조방법, 이를 이용한ｃｉｇｓ 박막형 태양전지, 및 그 제조 방법
KR20090039302A (ko) * 2007-10-18 2009-04-22 주식회사 엘지화학 금속 산화물 투명 도전성 박막의 제조방법
WO2009085224A2 (en) * 2007-12-20 2009-07-09 Cima Nanotech Israel Ltd. Photovoltaic device having transparent electrode formed with nanoparticles

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4342879A (en) * 1980-10-24 1982-08-03 The University Of Delaware Thin film photovoltaic device
US4614835A (en) * 1983-12-15 1986-09-30 Texas Instruments Incorporated Photovoltaic solar arrays using silicon microparticles
JP2756050B2 (ja) * 1992-03-03 1998-05-25 キヤノン株式会社 光起電力装置
JP3040373B2 (ja) * 1998-03-27 2000-05-15 昭和シェル石油株式会社 薄膜太陽電池のＺｎＯ系透明導電膜の製造方法
JP4467692B2 (ja) * 1999-12-22 2010-05-26 株式会社半導体エネルギー研究所 太陽電池及びその作製方法
JP2004103959A (ja) * 2002-09-11 2004-04-02 Matsushita Electric Ind Co Ltd 太陽電池およびその製造方法
SE0301350D0 (sv) * 2003-05-08 2003-05-08 Forskarpatent I Uppsala Ab A thin-film solar cell
EP1631992A2 (en) * 2003-06-12 2006-03-08 Patterning Technologies Limited Transparent conducting structures and methods of production thereof
JP5309521B2 (ja) * 2006-10-11 2013-10-09 三菱マテリアル株式会社 電極形成用組成物及びその製造方法並びに該組成物を用いた電極の形成方法
TWI446555B (zh) * 2007-12-27 2014-07-21 Ind Tech Res Inst 太陽能電池之背電極模組
JP2010087105A (ja) * 2008-09-30 2010-04-15 Fujifilm Corp 太陽電池
JP5306760B2 (ja) * 2008-09-30 2013-10-02 富士フイルム株式会社 透明導電体、タッチパネル、及び太陽電池パネル
WO2010123735A1 (en) * 2009-04-24 2010-10-28 Nanosys, Inc. Nanoparticle plasmon scattering layer for photovoltaic cells
KR20110036220A (ko) 2009-10-01 2011-04-07 엘지이노텍 주식회사 태양전지 및 이의 제조방법

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20090029495A (ko) * 2007-09-18 2009-03-23 엘지전자 주식회사 태양전지 박막조성용 잉크와 그 제조방법, 이를 이용한ｃｉｇｓ 박막형 태양전지, 및 그 제조 방법
KR20090039302A (ko) * 2007-10-18 2009-04-22 주식회사 엘지화학 금속 산화물 투명 도전성 박막의 제조방법
WO2009085224A2 (en) * 2007-12-20 2009-07-09 Cima Nanotech Israel Ltd. Photovoltaic device having transparent electrode formed with nanoparticles

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2600421A4 *

Also Published As

Publication number Publication date
CN103038895B (zh) 2016-01-20
KR101154577B1 (ko) 2012-06-08
EP2600421A4 (en) 2017-06-07
US20130112269A1 (en) 2013-05-09
EP2600421A2 (en) 2013-06-05
WO2012015151A2 (ko) 2012-02-02
CN103038895A (zh) 2013-04-10
US8829341B2 (en) 2014-09-09
KR20120012324A (ko) 2012-02-09

Similar Documents

Publication Publication Date Title
WO2012015151A3 (ko) 태양전지 및 이의 제조방법
WO2014042449A3 (ko) 광흡수 구조체가 구비된 태양전지
WO2011122853A3 (ko) 태양광 발전장치 및 이의 제조방법
WO2011127318A3 (en) Use of al barrier layer to produce high haze zno films on glass substrates
WO2011087878A3 (en) Manufacture of thin film solar cells with high conversion efficiency
WO2012003038A3 (en) Method of fabricating a solar cell with a tunnel dielectric layer
WO2010147393A3 (en) Solar cell and method of fabricating the same
WO2011090300A3 (ko) 다양한 종류의 나노입자를 함유한 적층형 유기-무기 하이브리드 태양전지 및 그 제조방법
WO2012061463A3 (en) Luminescent solar concentrator apparatus, method and applications
WO2009154986A3 (en) Fiber photovoltaic devices and methods for production thereof
WO2014042447A3 (ko) 광흡수 구조체가 구비된 태양전지의 제조방법
WO2011106236A3 (en) Nanoscale high-aspect-ratio metallic structure and method of manufacturing same
WO2012165873A3 (en) Solar cell apparatus and method of fabricating the same
WO2008147113A3 (en) High efficiency solar cell, method of fabricating the same and apparatus for fabricating the same
WO2012115392A3 (ko) 양면 구조를 가지는 태양전지 및 이의 제조방법
WO2012123645A3 (en) Thin film photovoltaic cell structure, nanoantenna, and method for manufacturing
WO2011043609A3 (ko) 태양광 발전장치 및 이의 제조방법
WO2010062957A3 (en) Semi-transparent thin-film photovoltaic modules and methods of manufacture
WO2011002212A3 (ko) 태양광 발전장치 및 이의 제조방법
WO2012138194A3 (en) Solar cell and manufacturing method thereof
WO2011002211A3 (ko) 태양전지 및 이의 제조방법
WO2012053763A3 (ko) 광산란층을 구비한 염료감응 태양전지모듈 및 그 제조 방법
WO2012005905A3 (en) Photovoltaic module and method of manufacturing a photovoltaic module having an electrode diffusion layer
WO2012127443A3 (pt) Substrato e eléctrodo para células solares e respectivo processo de fabrico
WO2008147486A3 (en) Methods of fabricating nanostructured zno electrodes for efficient dye sensitized solar cells

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 201180037319.6

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 11812682

Country of ref document: EP

Kind code of ref document: A2

WWE Wipo information: entry into national phase

Ref document number: 2011812682

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: 13639274

Country of ref document: US

NENP Non-entry into the national phase

Ref country code: DE