SE0301350D0 - A thin-film solar cell - Google Patents
A thin-film solar cellInfo
- Publication number
- SE0301350D0 SE0301350D0 SE0301350A SE0301350A SE0301350D0 SE 0301350 D0 SE0301350 D0 SE 0301350D0 SE 0301350 A SE0301350 A SE 0301350A SE 0301350 A SE0301350 A SE 0301350A SE 0301350 D0 SE0301350 D0 SE 0301350D0
- Authority
- SE
- Sweden
- Prior art keywords
- thin
- film solar
- ald
- solar cell
- layer
- Prior art date
Links
- 239000010409 thin film Substances 0.000 title abstract 2
- 238000000034 method Methods 0.000 abstract 3
- 229910007338 Zn(O,S) Inorganic materials 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Sustainable Energy (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Photovoltaic Devices (AREA)
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE0301350A SE0301350D0 (sv) | 2003-05-08 | 2003-05-08 | A thin-film solar cell |
JP2006508043A JP2006525671A (ja) | 2003-05-08 | 2004-05-05 | 薄膜太陽電池 |
PCT/SE2004/000689 WO2004100250A1 (en) | 2003-05-08 | 2004-05-05 | A thin-film solar cell |
CN2004800196933A CN1820358B (zh) | 2003-05-08 | 2004-05-05 | 薄膜太阳能电池及其形成方法、太阳能电池结构的生产线 |
EP04731270A EP1620888A1 (en) | 2003-05-08 | 2004-05-05 | A thin-film solar cell |
US10/555,792 US20060180200A1 (en) | 2003-05-08 | 2004-05-05 | Thin-film solar cell |
US12/788,963 US8865512B2 (en) | 2003-05-08 | 2010-05-27 | Thin-film solar cell |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE0301350A SE0301350D0 (sv) | 2003-05-08 | 2003-05-08 | A thin-film solar cell |
Publications (1)
Publication Number | Publication Date |
---|---|
SE0301350D0 true SE0301350D0 (sv) | 2003-05-08 |
Family
ID=20291248
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE0301350A SE0301350D0 (sv) | 2003-05-08 | 2003-05-08 | A thin-film solar cell |
Country Status (6)
Country | Link |
---|---|
US (2) | US20060180200A1 (sv) |
EP (1) | EP1620888A1 (sv) |
JP (1) | JP2006525671A (sv) |
CN (1) | CN1820358B (sv) |
SE (1) | SE0301350D0 (sv) |
WO (1) | WO2004100250A1 (sv) |
Families Citing this family (90)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SE0400631D0 (sv) * | 2004-03-11 | 2004-03-11 | Forskarpatent I Uppsala Ab | Thin film solar cell and manufacturing method |
JP4841173B2 (ja) * | 2005-05-27 | 2011-12-21 | 昭和シェル石油株式会社 | Cis系薄膜太陽電池の高抵抗バッファ層・窓層連続製膜方法及び製膜装置 |
KR101159075B1 (ko) * | 2006-06-27 | 2012-06-25 | 삼성전자주식회사 | n+ 계면층을 구비한 가변 저항 랜덤 액세스 메모리 소자 |
US20080153280A1 (en) * | 2006-12-21 | 2008-06-26 | Applied Materials, Inc. | Reactive sputter deposition of a transparent conductive film |
JP4616359B2 (ja) * | 2007-01-09 | 2011-01-19 | 韓國電子通信研究院 | 電子素子用ZnO半導体膜の形成方法及び前記半導体膜を含む薄膜トランジスタ |
US20080308147A1 (en) * | 2007-06-12 | 2008-12-18 | Yiwei Lu | Rear electrode structure for use in photovoltaic device such as CIGS/CIS photovoltaic device and method of making same |
US7846750B2 (en) * | 2007-06-12 | 2010-12-07 | Guardian Industries Corp. | Textured rear electrode structure for use in photovoltaic device such as CIGS/CIS solar cell |
US7875945B2 (en) | 2007-06-12 | 2011-01-25 | Guardian Industries Corp. | Rear electrode structure for use in photovoltaic device such as CIGS/CIS photovoltaic device and method of making same |
EP2201611A4 (en) * | 2007-09-25 | 2017-10-25 | First Solar, Inc | Photovoltaic devices including heterojunctions |
JP2009135337A (ja) * | 2007-11-30 | 2009-06-18 | Showa Shell Sekiyu Kk | Cis系太陽電池の積層構造、cis系薄膜太陽電池の集積構造及び製造方法 |
DE102007060236A1 (de) * | 2007-12-14 | 2009-06-18 | Helmholtz-Zentrum Berlin Für Materialien Und Energie Gmbh | Verfahren zur Herstellung eines eine mindestens ZnO enthaltende Zweifach-Pufferschicht aufweisenden Heterokontaktes und Heterokontakt mit Zweifach-Pufferschicht |
KR101412150B1 (ko) * | 2007-12-18 | 2014-06-26 | 엘지전자 주식회사 | 탠덤 구조 cigs 태양전지 및 그 제조방법 |
DE112008003755T5 (de) * | 2008-03-07 | 2011-02-24 | Showa Shell Sekiyu K.K. | Integrierte Struktur einer Solarzelle auf CIS-Grundlage |
KR101032890B1 (ko) | 2009-02-04 | 2011-05-06 | 한국에너지기술연구원 | Cis계 박막 태양전지용 버퍼층 제조방법 |
JP5003698B2 (ja) | 2009-02-18 | 2012-08-15 | Tdk株式会社 | 太陽電池、及び太陽電池の製造方法 |
JP5245034B2 (ja) * | 2009-02-20 | 2013-07-24 | 昭和シェル石油株式会社 | Cis系太陽電池の製造方法 |
JP5287380B2 (ja) | 2009-03-13 | 2013-09-11 | Tdk株式会社 | 太陽電池、及び太陽電池の製造方法 |
TWI414072B (zh) * | 2009-05-06 | 2013-11-01 | Ind Tech Res Inst | 太陽能模組 |
US8318530B2 (en) * | 2009-07-24 | 2012-11-27 | Solopower, Inc. | Solar cell buffer layer having varying composition |
KR100977374B1 (ko) * | 2009-08-03 | 2010-08-20 | 텔리오솔라 테크놀로지스 인크 | 대면적 박막형 cigs 태양전지 고속증착 및 양산장비, 그 공정방법 |
KR101610380B1 (ko) | 2009-10-01 | 2016-04-08 | 엘지이노텍 주식회사 | 태양광 발전장치 및 표시장치 |
WO2011052646A1 (ja) * | 2009-10-28 | 2011-05-05 | 京セラ株式会社 | 光電変換装置、光電変換モジュール、および光電変換装置の製造方法 |
FI20096380A0 (sv) * | 2009-12-22 | 2009-12-22 | Beneq Oy | Tunnfilmssolcell, framställningsförfarande och användning |
KR101623923B1 (ko) | 2010-02-25 | 2016-05-24 | 주식회사 메카로 | 박막 태양전지의 버퍼층 제조방법 |
CN101814553B (zh) * | 2010-03-05 | 2011-10-05 | 中国科学院上海硅酸盐研究所 | 光辅助方法制备铜铟镓硒薄膜太阳电池光吸收层 |
CN102782853A (zh) * | 2010-03-05 | 2012-11-14 | 第一太阳能有限公司 | 具有分级缓冲层的光伏器件 |
EP2556542A1 (en) * | 2010-04-09 | 2013-02-13 | Platzer-Björkman, Charlotte | Thin film photovoltaic solar cells |
CN102893408B (zh) * | 2010-05-13 | 2016-05-11 | 第一太阳能有限公司 | 光伏器件导电层 |
JP5430758B2 (ja) * | 2010-05-31 | 2014-03-05 | 京セラ株式会社 | 光電変換装置 |
CN102312197A (zh) * | 2010-07-08 | 2012-01-11 | 冠晶光电股份有限公司 | Cigs太阳能电池制程的设备及方法 |
US20130112235A1 (en) * | 2010-07-28 | 2013-05-09 | Kyocera Corporation | Photoelectric conversion device, method of manufacturing photoelectric conversion device, and photoelectric conversion module |
KR101154577B1 (ko) * | 2010-07-30 | 2012-06-08 | 엘지이노텍 주식회사 | 태양전지 및 이의 제조방법 |
CN103348488B (zh) * | 2010-09-22 | 2016-08-03 | 第一太阳能有限公司 | 具有金属硫氧化物窗口层的光伏装置 |
US8044477B1 (en) | 2010-09-30 | 2011-10-25 | General Electric Company | Photovoltaic device and method for making |
KR101172192B1 (ko) * | 2010-10-05 | 2012-08-07 | 엘지이노텍 주식회사 | 태양전지 및 이의 제조방법 |
US8834664B2 (en) | 2010-10-22 | 2014-09-16 | Guardian Industries Corp. | Photovoltaic modules for use in vehicle roofs, and/or methods of making the same |
US9312417B2 (en) | 2010-10-22 | 2016-04-12 | Guardian Industries Corp. | Photovoltaic modules, and/or methods of making the same |
JP5500059B2 (ja) * | 2010-12-07 | 2014-05-21 | 株式会社豊田中央研究所 | 光電素子 |
KR101189415B1 (ko) * | 2011-01-25 | 2012-10-10 | 엘지이노텍 주식회사 | 태양전지 및 이의 제조방법 |
KR101134730B1 (ko) * | 2011-01-25 | 2012-04-19 | 엘지이노텍 주식회사 | 태양전지 및 이의 제조방법 |
JPWO2012115267A1 (ja) * | 2011-02-25 | 2014-07-07 | 京セラ株式会社 | 光電変換素子および光電変換装置 |
WO2012115265A1 (ja) * | 2011-02-25 | 2012-08-30 | 京セラ株式会社 | 光電変換素子および光電変換装置 |
KR101210171B1 (ko) * | 2011-04-26 | 2012-12-07 | 중앙대학교 산학협력단 | 태양전지 및 이의 제조방법 |
JP5701673B2 (ja) * | 2011-05-06 | 2015-04-15 | 株式会社東芝 | 光電変換素子および太陽電池 |
JP5957185B2 (ja) * | 2011-05-06 | 2016-07-27 | 株式会社東芝 | 光電変換素子および太陽電池 |
JP2012235024A (ja) * | 2011-05-06 | 2012-11-29 | Toshiba Corp | 光電変換素子および太陽電池 |
US20120298177A1 (en) | 2011-05-26 | 2012-11-29 | Vandal Robert A | Concentrating photovoltaic systems with offset photovoltaic devices and/or associated methods |
KR101154786B1 (ko) * | 2011-05-31 | 2012-06-18 | 중앙대학교 산학협력단 | 태양전지 및 이의 제조방법 |
KR20140037198A (ko) * | 2011-06-09 | 2014-03-26 | 싱귤러스 엠오씨브이디 게엠바하 아이. 지알. | 인라인 화학 기상 증착을 위한 방법 및 시스템 |
KR20130030903A (ko) * | 2011-09-20 | 2013-03-28 | 엘지이노텍 주식회사 | 태양전지 및 이의 제조방법 |
US9202958B2 (en) | 2011-11-03 | 2015-12-01 | Guardian Industries Corp. | Photovoltaic systems and associated components that are used on buildings and/or associated methods |
CN102522437B (zh) * | 2011-12-15 | 2014-05-21 | 香港中文大学 | 铜铟镓硒太阳能电池装置及其制备方法 |
CN102522434B (zh) * | 2011-12-15 | 2015-04-15 | 香港中文大学 | 铜铟镓硒薄膜光伏电池装置及其制备方法 |
WO2013106836A1 (en) * | 2012-01-13 | 2013-07-18 | The Regents Of The University Of California | Metal-chalcogenide photovoltaic device with metal-oxide nanoparticle window layer |
CN102544132B (zh) * | 2012-01-17 | 2014-12-03 | 上海联孚新能源科技集团有限公司 | 铜铟镓硒电池及其制备方法 |
CN103296131A (zh) * | 2012-03-05 | 2013-09-11 | 任丘市永基光电太阳能有限公司 | 一种新的Cu(InGa)Se2薄膜太阳电池缓冲层制备方法 |
DE102012204676B4 (de) * | 2012-03-23 | 2019-02-21 | Helmholtz-Zentrum Berlin Für Materialien Und Energie Gmbh | Chalkopyrit-Dünnschicht-Solarzelle mit Zn(S,O)-Pufferschicht und dazugehöriges Herstellungsverfahren |
CN104395081B (zh) | 2012-04-18 | 2016-12-07 | 葛迪恩实业公司 | 用于车顶的被改进的光伏模块和/或其制备方法 |
US9419151B2 (en) | 2012-04-25 | 2016-08-16 | Guardian Industries Corp. | High-reflectivity back contact for photovoltaic devices such as copper—indium-diselenide solar cells |
US9159850B2 (en) | 2012-04-25 | 2015-10-13 | Guardian Industries Corp. | Back contact having selenium blocking layer for photovoltaic devices such as copper—indium-diselenide solar cells |
US8809674B2 (en) | 2012-04-25 | 2014-08-19 | Guardian Industries Corp. | Back electrode configuration for electroplated CIGS photovoltaic devices and methods of making same |
US9246025B2 (en) | 2012-04-25 | 2016-01-26 | Guardian Industries Corp. | Back contact for photovoltaic devices such as copper-indium-diselenide solar cells |
US9935211B2 (en) | 2012-04-25 | 2018-04-03 | Guardian Glass, LLC | Back contact structure for photovoltaic devices such as copper-indium-diselenide solar cells |
DE102012211894A1 (de) * | 2012-07-09 | 2014-01-09 | Robert Bosch Gmbh | Verwendung von mikroporösen anionischen anorganischen Gerüststrukturen, insbesondere enthaltend Dotierstoffkationen, für die Herstellung von Dünnschichtsolarzellen bzw. -modulen, photovoltaische Dünnschichtsolarzellen, enthaltend mikroporöse anionische anorganische Gerüststrukturen sowie Verfahren zur Herstellung solcher photovoltaischen Dünnschichtsolarmodule |
TW201407802A (zh) * | 2012-08-07 | 2014-02-16 | Long Energy Internat Ltd | 具有雙層n型半導體薄膜之太陽能電池堆疊結構及其製法 |
KR101897073B1 (ko) * | 2012-08-23 | 2018-09-12 | 엘지이노텍 주식회사 | 태양전지 및 이의 제조 방법 |
JP6083785B2 (ja) * | 2012-08-24 | 2017-02-22 | 日東電工株式会社 | 化合物太陽電池およびその製造方法 |
JP6312996B2 (ja) * | 2012-09-26 | 2018-04-18 | 株式会社東芝 | 光電変換素子および太陽電池 |
KR101923729B1 (ko) * | 2012-10-29 | 2018-11-29 | 한국전자통신연구원 | 태양전지의 제조방법 |
US9153729B2 (en) | 2012-11-26 | 2015-10-06 | International Business Machines Corporation | Atomic layer deposition for photovoltaic devices |
KR101449547B1 (ko) * | 2013-02-27 | 2014-10-15 | 주식회사 아바코 | 태양 전지 및 그 제조 방법 |
KR20140120011A (ko) * | 2013-04-01 | 2014-10-13 | 삼성에스디아이 주식회사 | 태양전지 및 이의 제조방법 |
US8889466B2 (en) | 2013-04-12 | 2014-11-18 | International Business Machines Corporation | Protective insulating layer and chemical mechanical polishing for polycrystalline thin film solar cells |
US8815633B1 (en) | 2013-04-18 | 2014-08-26 | National Tsing Hua University | Method of fabricating 3D structure on CIGS material |
KR101474488B1 (ko) | 2013-05-15 | 2014-12-19 | 엘에스엠트론 주식회사 | 화합물 박막 태양전지용 후면 기판 및 이를 포함하는 화합물 박막 태양전지 |
CN103346179B (zh) * | 2013-07-08 | 2015-09-16 | 深圳先进技术研究院 | 太阳能电池器件及其制备方法 |
KR102069195B1 (ko) * | 2013-07-22 | 2020-02-25 | 삼성디스플레이 주식회사 | 유기발광다이오드, 이를 포함하는 유기발광표시장치, 및 유기발광다이오드의 제조 방법 |
KR101765987B1 (ko) * | 2014-01-22 | 2017-08-08 | 한양대학교 산학협력단 | 태양 전지 및 그 제조 방법 |
US9240501B2 (en) * | 2014-02-12 | 2016-01-19 | Solar Frontier K.K. | Compound-based thin film solar cell |
KR102212040B1 (ko) * | 2014-04-21 | 2021-02-04 | 에스케이이노베이션 주식회사 | 원자층 증착법으로 형성된 버퍼층을 포함하는 태양전지의 제조방법 |
KR102212042B1 (ko) * | 2014-04-21 | 2021-02-04 | 에스케이이노베이션 주식회사 | 원자층 증착법으로 형성된 버퍼층을 포함하는 태양전지 및 이의 제조방법 |
KR101632631B1 (ko) * | 2014-05-20 | 2016-06-23 | 재단법인대구경북과학기술원 | Zn(O, S) 버퍼층 CZTS계 박막 태양전지의 제조방법 |
CN104143517A (zh) * | 2014-06-20 | 2014-11-12 | 苏州瑞晟纳米科技有限公司 | 一种两阶段式制备硫化镉缓冲层的工艺 |
JP6224532B2 (ja) * | 2014-06-27 | 2017-11-01 | 京セラ株式会社 | 光電変換装置 |
WO2017068923A1 (ja) * | 2015-10-19 | 2017-04-27 | ソーラーフロンティア株式会社 | 光電変換素子 |
KR101761565B1 (ko) | 2015-12-08 | 2017-07-26 | 주식회사 아바코 | 태양 전지 및 이의 제조 방법 |
CN105870214A (zh) * | 2016-04-14 | 2016-08-17 | 董友强 | 一种铜铟镓硒薄膜太阳电池 |
CN106784076A (zh) * | 2016-12-28 | 2017-05-31 | 中国电子科技集团公司第十八研究所 | 一种铜铟镓硒薄膜太阳电池缓冲层的制备方法 |
CN111584643A (zh) * | 2019-02-15 | 2020-08-25 | 北京铂阳顶荣光伏科技有限公司 | 太阳能电池及其制造方法 |
KR102710891B1 (ko) * | 2022-04-12 | 2024-09-30 | 서울대학교산학협력단 | 탠덤 태양전지 및 이의 제조방법 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4611091A (en) | 1984-12-06 | 1986-09-09 | Atlantic Richfield Company | CuInSe2 thin film solar cell with thin CdS and transparent window layer |
US5078804A (en) * | 1989-06-27 | 1992-01-07 | The Boeing Company | I-III-VI2 based solar cell utilizing the structure CuInGaSe2 CdZnS/ZnO |
DE4447866B4 (de) | 1994-11-16 | 2005-05-25 | Zentrum für Sonnenenergie- und Wasserstoff-Forschung Baden-Württemberg | Verfahren zur Herstellung einer Verbindungshalbleiter-Dünnschichtsolarzelle |
JP3249407B2 (ja) | 1996-10-25 | 2002-01-21 | 昭和シェル石油株式会社 | カルコパイライト系多元化合物半導体薄膜光吸収層からなる薄膜太陽電池 |
US5948176A (en) | 1997-09-29 | 1999-09-07 | Midwest Research Institute | Cadmium-free junction fabrication process for CuInSe2 thin film solar cells |
US6258620B1 (en) * | 1997-10-15 | 2001-07-10 | University Of South Florida | Method of manufacturing CIGS photovoltaic devices |
US6107562A (en) * | 1998-03-24 | 2000-08-22 | Matsushita Electric Industrial Co., Ltd. | Semiconductor thin film, method for manufacturing the same, and solar cell using the same |
JPH11330507A (ja) * | 1998-05-12 | 1999-11-30 | Yazaki Corp | 太陽電池 |
JP3434259B2 (ja) * | 1999-03-05 | 2003-08-04 | 松下電器産業株式会社 | 太陽電池 |
US6259016B1 (en) * | 1999-03-05 | 2001-07-10 | Matsushita Electric Industrial Co., Ltd. | Solar cell |
US7019208B2 (en) * | 2001-11-20 | 2006-03-28 | Energy Photovoltaics | Method of junction formation for CIGS photovoltaic devices |
JP2003179237A (ja) * | 2001-12-10 | 2003-06-27 | Matsushita Electric Ind Co Ltd | 半導体薄膜の製造方法および太陽電池 |
CN1151560C (zh) * | 2002-03-08 | 2004-05-26 | 清华大学 | 一种铜铟镓硒薄膜太阳能电池及其制备方法 |
US7221017B2 (en) * | 2002-07-08 | 2007-05-22 | Micron Technology, Inc. | Memory utilizing oxide-conductor nanolaminates |
WO2004032189A2 (en) * | 2002-09-30 | 2004-04-15 | Miasolé | Manufacturing apparatus and method for large-scale production of thin-film solar cells |
US6979838B2 (en) * | 2003-09-03 | 2005-12-27 | Hewlett-Packard Development Company, L.P. | Ultra-high density storage device using phase change diode memory cells and methods of fabrication thereof |
US7663057B2 (en) * | 2004-02-19 | 2010-02-16 | Nanosolar, Inc. | Solution-based fabrication of photovoltaic cell |
US7432139B2 (en) * | 2005-06-29 | 2008-10-07 | Amberwave Systems Corp. | Methods for forming dielectrics and metal electrodes |
-
2003
- 2003-05-08 SE SE0301350A patent/SE0301350D0/sv unknown
-
2004
- 2004-05-05 WO PCT/SE2004/000689 patent/WO2004100250A1/en active Application Filing
- 2004-05-05 EP EP04731270A patent/EP1620888A1/en not_active Ceased
- 2004-05-05 US US10/555,792 patent/US20060180200A1/en not_active Abandoned
- 2004-05-05 JP JP2006508043A patent/JP2006525671A/ja active Pending
- 2004-05-05 CN CN2004800196933A patent/CN1820358B/zh not_active Expired - Fee Related
-
2010
- 2010-05-27 US US12/788,963 patent/US8865512B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US20100233841A1 (en) | 2010-09-16 |
US20060180200A1 (en) | 2006-08-17 |
US8865512B2 (en) | 2014-10-21 |
JP2006525671A (ja) | 2006-11-09 |
CN1820358B (zh) | 2010-10-13 |
EP1620888A1 (en) | 2006-02-01 |
WO2004100250A1 (en) | 2004-11-18 |
CN1820358A (zh) | 2006-08-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
SE0301350D0 (sv) | A thin-film solar cell | |
TW200610807A (en) | Organic light-emitting device comprising buffer layer and method for fabricating the same | |
MY152398A (en) | Method for manufacturing a solar cell with a surface-passivating dielectric double layer, and corresponding solar cell | |
TW200703672A (en) | Thermal process for creation of an in-situ junction layer in CIGS | |
WO2006053032A8 (en) | Thermal process for creation of an in-situ junction layer in cigs | |
TW200512857A (en) | Semiconductor device and method for fabricating the same | |
TW201130016A (en) | Methods of selectively depositing an epitaxial layer | |
WO2007024341A3 (en) | Method of preparing a film layer-by-layer using plasma enhanced atomic layer deposition | |
JP2003347543A5 (sv) | ||
TW200635058A (en) | Back junction solar cell and process for producing the same | |
WO2007149945A3 (en) | Methods and apparatus for depositing a microcrystalline silicon film for photovoltaic device | |
TW200737304A (en) | Technique and apparatus for deposition layers of semiconductors for solar cell and module fabrication | |
EP2216824A3 (en) | Compound thin-film solar cell and process for producing the same | |
EP1798778A3 (en) | Integrated thin-film solar cell and method of manufacturing the same | |
EP1342816A3 (en) | Tin plating method | |
WO2009069582A1 (ja) | Cis系太陽電池の積層構造、cis系薄膜太陽電池の集積構造及び製造方法 | |
WO2006019603A3 (en) | Thin tungsten silicide layer deposition and gate metal integration | |
WO2005104236A3 (en) | Optical devices featuring textured semiconductor layers | |
DE60033038D1 (de) | Hybridsolarzelle mit thermisch abgeschiedener Halbleiteroxidschicht | |
JP2009533844A5 (sv) | ||
HK1092588A1 (en) | Series connection of solar cells with integrated semiconductor bodies, method of production and photovoltaic module with series connection | |
AU2003234778A1 (en) | Method for manufacturing compound thin-film solar cell | |
FR2936905B1 (fr) | Cellule photovoltaique a heterojonction a deux dopages et procede de fabrication. | |
TW200725889A (en) | Semiconductor device and method for forming the same | |
MX2009009665A (es) | Metodo para la produccion de una celula solar asi como celula solar producida utilizando dicho metodo. |