CN104143517A - 一种两阶段式制备硫化镉缓冲层的工艺 - Google Patents
一种两阶段式制备硫化镉缓冲层的工艺 Download PDFInfo
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Abstract
本发明涉及一种两段式制备硫化镉缓冲层工艺，第一段缓冲层为较大颗粒的硫化镉，由较高浓度的反应物通过化学水浴沉积法沉积在CIGS上，可以增加硫化镉与CIGS的结合，并保证其缓冲层的结晶性并提高对异质结内产生的载流子的迁移传输能力。第二段缓冲层由较低浓度的反应物通过化学水浴沉积法获得，由较小颗粒的硫化镉组成，沉积在第一段缓冲层上，可以使硫化镉薄膜的填隙能力更好，提高缓冲层的致密性，改善界面，继而能提高太阳能电池的器件效率。本方法特征在于(一)利用两阶段水浴的方法实现CIGS缓冲层制备；(二)易于调控缓冲层硫化镉的结晶分布。根据作用不同分部优化了缓冲层硫化镉性质，从而极大的提高了器件的效率。
Description
技术领域
本发明属于光电子器件领域，涉及到一种采用两阶段式方法制备硫化镉缓冲层的工艺方法。
背景技术
硫化镉缓冲层一般应用于CuIn1-XGaXSe2(简称CIGS)薄膜太阳能电池中，电池的结构一般为glass/Mo/CIGS/CdS/i-ZnO/ZnO:Al/Ni-Al，CIGS作为太阳能电池的吸收层，禁带宽度为1.02-1.68ev，n型高阻ZnO与Al掺杂的ZnO低阻透明导电薄膜组合作为窗口层，其禁带宽度为3.37ev左右，如果CIGS与ZnO直接接触形成P-N结，它们的禁带宽度相差太大，影响载流子迁移，并且它们各自的晶格常数也相差较大，直接接触的界面晶格匹配不好，影响电池的输出性能。CdS的禁带宽度为2.4ev，将其作为缓冲层增加在CIGS与ZnO之间能很好地缓解这种情况，形成CIGS/CdS/ZnO结构。CdS一般通过化学水浴法沉积(简称CBD)，获得的薄膜结构较致密，与CIGS薄膜的晶格失配较低，为1.4％左右。另外，CdS薄膜包覆在CIGS表面上，能有效阻止后续溅射ZnO时对CIGS层造成损伤，消除可能由此带来的电池短路现象，同时缓冲层中的Cd原子会扩散到CIGS层形成微量掺杂，改善PN结特性。目前关于制备硫化镉缓冲层的报道，主要集中在通过化学水浴沉积法一步制备硫化镉薄膜的工艺，而两段式制备硫化镉缓冲层工艺未见报道，并且运用两阶段式工艺法制备的缓冲层能分步优化结晶及消除短路,从而有效提高光电器件效率。
发明内容
本发明的目的在于提供一种两阶段式制备硫化镉缓冲层工艺方法:两阶段溶液法，(泛指一切溶液浴反应沉积硫化镉的方法)。本发明利用溶液反应分两个阶段将硫化镉CdS沉积在CIGS或其他金属化合物半导体上，整个沉积分为两步：第一段工艺制备得到的硫化镉薄膜由较大颗粒的硫化镉组成，保证其缓冲层的结晶性及提高对异质结内产生的载流子的迁移传输能力，第二段工艺制备得到的硫化镉薄膜由较细颗粒的硫化镉组成，能提高缓冲层的致密性，加强与CIGS层的界面结合，从而有效提高太阳能电池的器件效率。
本发明是一种两段式制备硫化镉缓冲层工艺，其特征在于，其中包括：
第一段工艺由较高浓度的反应物：硫酸镉、硫脲、氨水及纯水通过化学水浴沉积法制备获得缓冲层(1)，由较大颗粒的硫化镉组成，沉积在CIGS上，可以降低样品的表面粗糙度，并形成PN结，有效传输载流子。
第二段工艺由较低浓度的反应物：硫酸镉、硫脲、氨水及纯水通过化学水浴沉积法制备获得缓冲层(2)，由较小颗粒的硫化镉组成，沉积在缓冲层(1)上，可以使硫化镉薄膜的填隙能力更好，提高缓冲层的致密性，提高器件的填充因子。
本发明的积极效果是：该两段式制备硫化镉缓冲层工艺能有效提高缓冲层致密性，从而提高太阳能电池器件效率。
附图说明
为进一步说明本发明的内容以及特点，以下结合附图对本发明作详细的描述，其中：
图1为本发明制备缓冲层结构的示意图
图2为化学水浴沉积法(CBD)制备硫化镉薄膜的微观机制图
图3为运用化学水浴沉积法制备硫化镉缓冲层的实验装置图
图4为两段式制备硫化镉薄膜表面形态对比图
图5为太阳能电池器件效率对比图
具体实施方式
为了更清楚地表现本发明的目的、技术方案及优点，以下将结合具体的实施例和参照图进行详细说明
如图1所示，图1为运用两段式制备硫化镉缓冲层工艺制备而成的缓冲层结构示意图。该缓冲层包括——缓冲层(1)；该缓冲层是沉积在CIGS薄膜上的；——缓冲层(2)；该缓冲层是沉积在缓冲层(1)上的。
该两层缓冲层均是运用化学水浴沉积法获得，因为该方法具备制程简单、成本低廉，且制备出的薄膜比较均匀，一般被用来制备硫化镉缓冲层，厚度通常为10-500nm。在CBD中，反应机制为：以硫脲为硫源，络合物[Cd(NH3)4]2+为硫前驱体，反应在氨水溶液中进行，铵盐作为缓冲液。根据ortega-borges和lincot提出的生长机理理论，反应机理为四个过程：
Cd2++4NH3→Cd(NH3)4 2+
Cd(NH3)n 2++2OH-+site→[Cd(OH)2]ads+n NH3
[Cd(OH)2]ads+SC(NH2)2→[Cd(OH)2SC(NH2)2]ads
[Cd(OH)2SC(NH2)2]ads→CdS+CN2H2+2H2O+site
此外硫脲在碱性溶液中会产生S2-
SC(NH2)2+2OH-→S2-+CN2H2+2H2O
图2为化学水浴沉积(CBD)法制备硫化镉薄膜的微观机制图，在此生长过程中有两种主要的竞争反应，即溶液中的同类粒子排列和衬底上异类表面反应，其中异类表面反应又包括两种过程：一种是在衬底上吸附CdS颗粒的过程称为簇簇机制(cluster by cluster)，其导致薄膜形貌粗糙、疏松。其详细过程是：自由的镉离子随后同自由的硫离子反应形成CdS粒子，通过颗粒间较弱的作用力沉积在衬底表面上，使得薄膜的表面粗糙、松散、致密性差。另一种称为离子离子机制，即首先在衬底上吸附Cd2+的络合物，接着吸附硫源形成中间相，最后中间相分解得到CdS。其详细过程是：由氢氧化铵组成的碱性溶液提供氨，镉盐(如CdSO4)通过离解反应产生自由的镉离子(Cd2+)，镉离子就和氨分子复合形成占主导地位的配合离子：Cd(NH3)4 2+，控制镉离子的浓度。在衬底表面处，Cd(NH3)4 2+配合离子与OH-发生反应产生吸附在衬底表面上的[Cd(OH)2(NH3)2]ads配合离子。随后这种配合离子按照Rideal-Eley机制与硫脲发生反应形成吸附在表面上的亚稳态[Cd(OH)2(NH3)2SC(NH2)2]ads配合物，并且随着吸附在表面上的亚稳态配合物分解新生出一层新的表面，最终形成CdS，这种机制得到的CdS薄膜致密、平整。在反应中，这两种机制相互竞争。
如图3所示，图3为运用化学水浴沉积法制备硫化镉缓冲层的实验装置图，包括：恒温水浴锅、搅拌器、温度计、样品支架、反应容器。通过调节反应物浓度可以调整生成的硫化镉颗粒大小，如图4所示，第一段工艺先运用较高浓度反应物反应生成缓冲层(1)，由较大颗粒的硫化镉组成，保证缓冲层的结晶性及提高对异质结内产生的载流子的迁移传输能力，后第二段工艺运用较低浓度反应物反应生成缓冲层(2)，由较细颗粒的硫化镉组成，能提高缓冲层的致密性，加强与CIGS层的界面结合。通过调整反应时间可以有效控制薄膜厚度，通常情况下控制第一段缓冲层厚度为1-200nm，第二段缓冲层厚度为1-200nm。
实验例：
1.制备第一层缓冲层工艺如下：
用适量纯水分别配制7.5*10-3mol的硫酸镉和0.05mol的硫脲，与100ml的氨水及纯水混合，配制成500ml的混合溶液。将需沉积之样品(如CIGS或其他金属化合物半导体)放入上述混合溶液，20min后将样品取出，并用纯水清洗，然后氮气吹干。
2.制备第二层缓冲层工艺如下：
用适量纯水分别配制5*10-3mol的硫酸镉和0.01mol的硫脲，与30ml的氨水及纯水混合。使溶液总体积达到500ml，将第1阶段制备之样品放入水浴，反应约30min后将样品取出，并用纯水超声清洗，然后用氮气吹干。
将该两段式制备硫化镉工艺应用到制备CIGS太阳能电池上会产生有益效果，如图5所示，器件的填充因子及效率均略有提高。
以上所述的具体施例，对本发明的目的、技术方案和积极的效果进行了进一步详细说明，所应理解的是，以上所述仅为本发明的具体施例而已，并不用于限制本发明，凡在本发明的原则之内所做的任何修和改进等，均应包含在本发明的保护范围之内。
Claims (4)
1.一种两阶段式制备硫化镉缓冲层工艺，用于优化铜铟镓硒太阳能电池缓冲层，其特征在于，其中包括：
第一段工艺制备得到的硫化镉缓冲层与铜铟镓硒层接触，可以改善界面间的晶格匹配，并减小载流子在界面的复合。
第二段工艺制备得到由较小颗粒的硫化镉组合形成的缓冲层薄膜，能提高缓冲层的致密性，加强其与P型半导体界面的接触，并能降低样品表面粗糙度。
2.如权利要求1所述的一种两段式制备硫化镉缓冲层工艺，其特征在于，第一段工艺制备得到的硫化镉缓冲层，和第二段工艺制备得到的硫化镉缓冲层，是由不同浓度比例的硫酸镉、硫脲、氨水及纯水通过化学水浴沉积法制备获得。
3.如权利要求1所述的一种两段式制备硫化镉缓冲层工艺，其特征在于，第一段工艺制备得到的硫化镉缓冲层厚度在1-500nm之间，通过化学水浴沉积法沉积在铜铟镓硒薄膜上。
4.如权利要求1所述的一种两段式制备硫化镉缓冲层工艺，其特征在于，第二段工艺制备得到的硫化镉缓冲层厚度在1-500nm之间，通过化学水浴沉积法沉积在第一段制备得到的硫化镉薄膜上。
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