KR20100109315A - 태양전지 및 이의 제조방법 - Google Patents
태양전지 및 이의 제조방법 Download PDFInfo
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- KR20100109315A KR20100109315A KR1020090027878A KR20090027878A KR20100109315A KR 20100109315 A KR20100109315 A KR 20100109315A KR 1020090027878 A KR1020090027878 A KR 1020090027878A KR 20090027878 A KR20090027878 A KR 20090027878A KR 20100109315 A KR20100109315 A KR 20100109315A
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- South Korea
- Prior art keywords
- buffer layer
- layer
- solar cell
- light absorbing
- buffer
- Prior art date
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 229910052984 zinc sulfide Inorganic materials 0.000 claims abstract description 10
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000005083 Zinc sulfide Substances 0.000 claims abstract description 8
- AKUCEXGLFUSJCD-UHFFFAOYSA-N indium(3+);selenium(2-) Chemical compound [Se-2].[Se-2].[Se-2].[In+3].[In+3] AKUCEXGLFUSJCD-UHFFFAOYSA-N 0.000 claims abstract description 8
- GKCNVZWZCYIBPR-UHFFFAOYSA-N sulfanylideneindium Chemical compound [In]=S GKCNVZWZCYIBPR-UHFFFAOYSA-N 0.000 claims abstract description 8
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 claims abstract description 8
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 12
- 229910052782 aluminium Inorganic materials 0.000 claims description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 9
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 7
- 229910052709 silver Inorganic materials 0.000 claims description 7
- 239000004332 silver Substances 0.000 claims description 7
- 239000011787 zinc oxide Substances 0.000 claims description 6
- 239000002019 doping agent Substances 0.000 claims description 5
- 230000031700 light absorption Effects 0.000 abstract 3
- 238000000034 method Methods 0.000 description 24
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- 239000010949 copper Substances 0.000 description 9
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 8
- 229910052733 gallium Inorganic materials 0.000 description 8
- 229910052738 indium Inorganic materials 0.000 description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 239000011669 selenium Substances 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 5
- 229910021529 ammonia Inorganic materials 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 239000002243 precursor Substances 0.000 description 4
- UMGDCJDMYOKAJW-UHFFFAOYSA-N thiourea Chemical compound NC(N)=S UMGDCJDMYOKAJW-UHFFFAOYSA-N 0.000 description 4
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 3
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Natural products NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- -1 electrode Substances 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- TWRZFUHTOCHGNT-UHFFFAOYSA-N azane;thiourea Chemical compound N.NC(N)=S TWRZFUHTOCHGNT-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- YNLHHZNOLUDEKQ-UHFFFAOYSA-N copper;selanylidenegallium Chemical compound [Cu].[Se]=[Ga] YNLHHZNOLUDEKQ-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910000337 indium(III) sulfate Inorganic materials 0.000 description 1
- XGCKLPDYTQRDTR-UHFFFAOYSA-H indium(iii) sulfate Chemical compound [In+3].[In+3].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O XGCKLPDYTQRDTR-UHFFFAOYSA-H 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 150000003346 selenoethers Chemical class 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- NWONKYPBYAMBJT-UHFFFAOYSA-L zinc sulfate Chemical compound [Zn+2].[O-]S([O-])(=O)=O NWONKYPBYAMBJT-UHFFFAOYSA-L 0.000 description 1
- 229960001763 zinc sulfate Drugs 0.000 description 1
- 229910000368 zinc sulfate Inorganic materials 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Claims (6)
- 기판;상기 기판 상에 배치되는 전극층;상기 전극층 상에 배치되는 광 흡수층;상기 광 흡수층 상에 배치되며, 인듐 셀레나이드 또는 인듐 설파이드를 포함하는 제 1 버퍼층;상기 제 1 버퍼층 상에 배치되며, 징크 셀레나이드 또는 징크 설파이드를 포함하는 제 2 버퍼층; 및상기 제 2 버퍼층 상에 배치되는 윈도우층을 포함하는 태양전지.
- 제 1 항에 있어서, 상기 제 2 버퍼층 및 상기 윈도우층 사이에 개재되는 고저항 버퍼층을 포함하는 태양전지.
- 제 2 항에 있어서, 상기 고저항 버퍼층은 징크 옥사이드를 포함하는 태양전지.
- 제 1 항에 있어서, 상기 제 1 버퍼층은 2 eV 내지 2.7 eV의 에너지 밴드갭을 가지고, 상기 제 2 버퍼층은 2.7 eV 내지 3.7 eV의 에너지 밴드갭을 가지는 태양전지.
- 제 1 항에 있어서, 상기 제 1 버퍼층 또는 제 2 버퍼층은 알루미늄 도펀트 또는 은 도펀트를 포함하는 태양전지.
- 기판 상에 전극층을 형성하는 단계;상기 전극층 상에 광 흡수층을 형성하는 단계;상기 광 흡수층 상에 인듐 셀레나이드 또는 인듐 설파이드를 포함하는 제 1 버퍼층을 형성하는 단계;상기 제 1 버퍼층 상에 징크 셀레나이드 또는 징크 설파이드를 포함하는 제 2 버퍼층을 형성하는 단계; 및상기 제 2 버퍼층 상에 윈도우층을 형성하는 단계를 포함하는 태양전지의 제조방법.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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KR1020090027878A KR100999810B1 (ko) | 2009-03-31 | 2009-03-31 | 태양전지 및 이의 제조방법 |
Applications Claiming Priority (1)
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KR1020090027878A KR100999810B1 (ko) | 2009-03-31 | 2009-03-31 | 태양전지 및 이의 제조방법 |
Publications (2)
Publication Number | Publication Date |
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KR20100109315A true KR20100109315A (ko) | 2010-10-08 |
KR100999810B1 KR100999810B1 (ko) | 2010-12-08 |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013069998A1 (en) * | 2011-11-11 | 2013-05-16 | Lg Innotek Co., Ltd. | Solar cell and method of fabricating the same |
WO2013151313A1 (en) * | 2012-04-02 | 2013-10-10 | Lg Innotek Co., Ltd. | Solar cell apparatus and method of fabricating the same |
KR20140027628A (ko) * | 2012-08-23 | 2014-03-07 | 엘지이노텍 주식회사 | 태양전지 및 이의 제조 방법 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101173402B1 (ko) | 2011-01-25 | 2012-08-10 | 엘지이노텍 주식회사 | 태양전지 및 이의 제조방법 |
KR101173418B1 (ko) | 2011-07-29 | 2012-08-10 | 엘지이노텍 주식회사 | 태양전지 및 이의 제조방법 |
KR101262583B1 (ko) | 2011-07-29 | 2013-05-08 | 엘지이노텍 주식회사 | 태양광 발전장치 및 이의 제조방법 |
KR101305603B1 (ko) * | 2011-11-09 | 2013-09-09 | 엘지이노텍 주식회사 | 태양전지 및 이의 제조방법 |
KR101349484B1 (ko) | 2011-11-29 | 2014-01-10 | 엘지이노텍 주식회사 | 태양전지 모듈 및 이의 제조방법 |
KR102715008B1 (ko) | 2022-12-15 | 2024-10-07 | 주식회사 에스티 | 신재생에너지 생산을 위한 태양전지모듈 제조방법 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100280838B1 (ko) | 1993-02-08 | 2001-02-01 | 이데이 노부유끼 | 태양전지 |
JP4341124B2 (ja) | 1999-11-25 | 2009-10-07 | ソニー株式会社 | 半導体装置の製造方法 |
-
2009
- 2009-03-31 KR KR1020090027878A patent/KR100999810B1/ko active IP Right Grant
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013069998A1 (en) * | 2011-11-11 | 2013-05-16 | Lg Innotek Co., Ltd. | Solar cell and method of fabricating the same |
WO2013151313A1 (en) * | 2012-04-02 | 2013-10-10 | Lg Innotek Co., Ltd. | Solar cell apparatus and method of fabricating the same |
CN104272469A (zh) * | 2012-04-02 | 2015-01-07 | Lg伊诺特有限公司 | 太阳能电池装置及其制造方法 |
US9691927B2 (en) | 2012-04-02 | 2017-06-27 | Lg Innotek Co., Ltd. | Solar cell apparatus and method of fabricating the same |
KR20140027628A (ko) * | 2012-08-23 | 2014-03-07 | 엘지이노텍 주식회사 | 태양전지 및 이의 제조 방법 |
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Publication number | Publication date |
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KR100999810B1 (ko) | 2010-12-08 |
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