JP2006525671A - 薄膜太陽電池 - Google Patents
薄膜太陽電池 Download PDFInfo
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- 239000010409 thin film Substances 0.000 title claims abstract description 27
- 238000000231 atomic layer deposition Methods 0.000 claims abstract description 62
- 229910052717 sulfur Inorganic materials 0.000 claims abstract description 61
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 53
- 238000004519 manufacturing process Methods 0.000 claims abstract description 19
- 239000010410 layer Substances 0.000 claims description 230
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 95
- 239000011701 zinc Substances 0.000 claims description 48
- 238000000034 method Methods 0.000 claims description 41
- 238000000151 deposition Methods 0.000 claims description 22
- 230000008021 deposition Effects 0.000 claims description 19
- HQWPLXHWEZZGKY-UHFFFAOYSA-N diethylzinc Chemical compound CC[Zn]CC HQWPLXHWEZZGKY-UHFFFAOYSA-N 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 17
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 16
- 239000011593 sulfur Substances 0.000 claims description 16
- 239000002356 single layer Substances 0.000 claims description 15
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 12
- 229910052739 hydrogen Inorganic materials 0.000 claims description 10
- 230000031700 light absorption Effects 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 7
- 238000006243 chemical reaction Methods 0.000 claims description 6
- 229910052733 gallium Inorganic materials 0.000 claims description 6
- 229910052738 indium Inorganic materials 0.000 claims description 6
- -1 organometallic zinc compound Chemical class 0.000 claims description 6
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 5
- 229910052711 selenium Inorganic materials 0.000 claims description 5
- 238000001816 cooling Methods 0.000 claims description 4
- 238000001771 vacuum deposition Methods 0.000 claims description 4
- 229910052725 zinc Inorganic materials 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- AXAZMDOAUQTMOW-UHFFFAOYSA-N dimethylzinc Chemical compound C[Zn]C AXAZMDOAUQTMOW-UHFFFAOYSA-N 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 230000007423 decrease Effects 0.000 claims description 2
- 239000007789 gas Substances 0.000 claims description 2
- UGZADUVQMDAIAO-UHFFFAOYSA-L zinc hydroxide Chemical compound [OH-].[OH-].[Zn+2] UGZADUVQMDAIAO-UHFFFAOYSA-L 0.000 claims description 2
- 229940007718 zinc hydroxide Drugs 0.000 claims description 2
- 229910021511 zinc hydroxide Inorganic materials 0.000 claims description 2
- 239000010408 film Substances 0.000 claims 3
- 229910044991 metal oxide Inorganic materials 0.000 claims 2
- 150000004706 metal oxides Chemical class 0.000 claims 2
- 230000007704 transition Effects 0.000 claims 2
- 239000001257 hydrogen Substances 0.000 claims 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 1
- 150000003752 zinc compounds Chemical class 0.000 claims 1
- 239000011787 zinc oxide Substances 0.000 description 45
- 150000001875 compounds Chemical class 0.000 description 8
- 238000004544 sputter deposition Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 229910052793 cadmium Inorganic materials 0.000 description 4
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 230000007613 environmental effect Effects 0.000 description 3
- 238000011031 large-scale manufacturing process Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000003877 atomic layer epitaxy Methods 0.000 description 2
- 238000000224 chemical solution deposition Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 231100000331 toxic Toxicity 0.000 description 2
- 230000002588 toxic effect Effects 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- JIAARYAFYJHUJI-UHFFFAOYSA-L zinc dichloride Chemical compound [Cl-].[Cl-].[Zn+2] JIAARYAFYJHUJI-UHFFFAOYSA-L 0.000 description 2
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 1
- 240000002329 Inga feuillei Species 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- CUJRVFIICFDLGR-UHFFFAOYSA-N acetylacetonate Chemical compound CC(=O)[CH-]C(C)=O CUJRVFIICFDLGR-UHFFFAOYSA-N 0.000 description 1
- 239000012080 ambient air Substances 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000002920 hazardous waste Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910000037 hydrogen sulfide Inorganic materials 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 238000011534 incubation Methods 0.000 description 1
- 238000007373 indentation Methods 0.000 description 1
- ZJDCLINAWYFEFQ-UHFFFAOYSA-N indium;pentane-2,4-dione Chemical compound [In].CC(=O)CC(C)=O ZJDCLINAWYFEFQ-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- GKCNVZWZCYIBPR-UHFFFAOYSA-N sulfanylideneindium Chemical compound [In]=S GKCNVZWZCYIBPR-UHFFFAOYSA-N 0.000 description 1
- YOXKVLXOLWOQBK-UHFFFAOYSA-N sulfur monoxide zinc Chemical compound [Zn].S=O YOXKVLXOLWOQBK-UHFFFAOYSA-N 0.000 description 1
- 235000005074 zinc chloride Nutrition 0.000 description 1
- 239000011592 zinc chloride Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
- H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
Description
本発明は、カドミウムの無い薄膜太陽電池、このような電池を製造するための方法および生産ラインに関する。
太陽電池は、再生可能な技術であるので、最小の環境的影響で電力を生成する手段を提供する。商業的に成功するためには、太陽電池は、効率的で低コストで耐久性があり、そして他の環境問題を加えない必要がある。
M グリーン、K エメリ、D キンリ、S イガリ、およびW ワルタ、太陽電池効率表(第21版)、プログ. ホトボルト、レス.アプリ.2003;11、39−45ページ。
本発明の1つの目的は、太陽電池の製造のための処理工程の数を減らし、それにより太陽電池の製造にかかるコストを削減することである。
本発明によるCIGS電池が図2に示されている。本電池は、通常のガラス基板1、モリブデンの後面コンタクト層2、CIGS層3、およびウィンドウ層5を含む。通常のCdSバッファ層は2つのバッファ層、CIGS層上に付着されZn(O,S)を含む第1のバッファ層、および、第1のバッファ層上に付着されZnOを含む第2のバッファ層8、によって置き換えられている。
Zn−H2O−Zn−H2O−Zn−H2O−Zn−H2O−Zn−H2S−Zn−等
ジエチル亜鉛の代わりに、ジメチル亜鉛あるいは他の有機金属亜鉛化合物を使用することができる。有機金属インジウム化合物を使用することもまた可能である。
Iscは、短絡電流であり、FFは、充填率である。
Claims (15)
- 下部電極層上に形成されたp型半導体Cu(In,Ga)(Se,S)2光吸収層(CIGS層)の薄膜、上記光吸収層を覆って形成された、n型導電性を有しウィンドウ層および電極として機能する透過導電性金属酸化物の薄膜、および上記ウィンドウ層と上記CIGS層との間のインタフェース層、を含む薄膜太陽電池であって、上記インタフェース層は、上記CIGS層上にALD成長された、上記太陽電池の電気的性質を改良する第1の硫黄含有バッファ層、および、ALD付着により上記第1のバッファ層と一体的に形成された、ZnOを含む第2のバッファ層、を含むことを特徴とする、上記薄膜太陽電池。
- 請求項1に記載の薄膜太陽電池であって、上記第1のバッファ層は、ALD付着されたZn(Ox,S1-x)であり、ここで、xは0と0.9との間、好ましくは0.1と0.7との間で変化することを特徴とする、上記薄膜太陽電池。
- 請求項2に記載の薄膜太陽電池であって、上記第1のバッファ層はさらに水素を含み、ここで亜鉛化合物もまた水酸化亜鉛を含むことを特徴とする、上記薄膜太陽電池。
- 請求項1に記載の薄膜太陽電池であって、上記第1のバッファ層は、ALD付着In2S3であることを特徴とする、上記薄膜太陽電池。
- 請求項2に記載の薄膜太陽電池であって、上記第1のバッファ層の厚さは、約1nmより厚く、約30nmより薄いことを特徴とする、上記薄膜太陽電池。
- 請求項1に記載の薄膜太陽電池であって、上記第1のバッファ層の上記第2のバッファ層への段階的遷移があり、上記第1のバッファ層の硫黄含有は、その厚さを越える方向において徐々に減少することを特徴とする、上記薄膜太陽電池。
- 薄膜太陽電池構造における、p型半導体Cu(In,Ga)(Se,S)2光吸収層(CIGS層)の薄膜とn型導電性ウィンドウ層の薄膜との間にインタフェース層を形成する方法であって、上記CIGS層を規定の温度にする工程と、上記CIGS層を処理チャンバ内に入れる工程、を含み、上記インタフェース層を、最初に原子層付着(ALD)を使用して上記CIGS層の表面上に第1の硫黄含有バッファ層を付着し、最後に原子層付着(ALD)を使用して上記第1のバッファ層の上に第2のZnO層を付着することによって提供することを特徴とする、上記方法。
- 請求項7に記載の方法であって、上記第1および第2のバッファ層を1つの同一のALD処理チャンバにおいて形成することを特徴とする、上記方法。
- 請求項7に記載の方法であって、上記第1および第2バッファ層を個別の、しかしリンクされたALD処理チャンバにおいて形成することを特徴とする、上記方法。
- 請求項7に記載の方法であって、上記吸収層を上記ALD反応チャンバにおいて、亜鉛含有単一層を形成するために、例えばジエチル亜鉛あるいはジメチル亜鉛のような有機金属亜鉛化合物のパルスに、そして、上記光吸収層の上に吸収される第1の単一層を形成するために上記亜鉛原子の上に酸素および硫黄を成長させるために、水とH2Sの交互のパルスに交互にさらすことによって、上記第1の硫黄含有バッファ層を提供することと、上記工程を、互いの上に追加硫黄含有単一層を成長させるために繰り返すことと、そして、この処理を、第1の既定の厚さの上記第1の硫黄含有バッファ層が得られるまで続けることを特徴とする、上記方法。
- 請求項10に記載の方法であって、H2Sのパルスを、水とH2Sパルスの合計数に対して、10−100%の割合において、好ましくは15−25%の割合において、そして最も好ましくは20%の割合において提供することを特徴とする、上記方法。
- 請求項10あるいは11に記載の方法であって、上記第2のZnOバッファ層を、上記H2Sのパルスを除いて上記第1のバッファ層と同様の方法で提供し、上記第1のバッファ層を上記ALD反応チャンバにおいて、例えばジエチル亜鉛あるいはジメチル亜鉛のような有機金属亜鉛化合物のガス・パルス、および水のパルスに、第2の既定の厚さの上記第2のZnOバッファ層が得られるまで、交互にさらし続けることを特徴とする、上記方法。
- 請求項12に記載の方法であって、上記第1のバッファ層の上記第2のバッファ層内への緩やかな遷移を得るために、上記追加単一層が成長するにつれ、上記硫黄の割合を連続して減少させることを特徴とする、上記方法。
- 下部電極層上に形成されたp型半導体Cu(In,Ga)(Se,S)2光吸収層(CIGS層)の薄膜、上記光吸収層を覆って形成された、n型導電性を有しウィンドウ層および電極として機能する透過導電性金属酸化物の薄膜、および上記ウィンドウ層と上記CIGS層との間のインタフェース層、を含む太陽電池構造を製造するための処理ラインであって、上記CIGS層が基板上に真空付着される真空付着チャンバを含み、最初にALD付着を使用して上記CIGS層の表面上に第1の硫黄含有バッファ層を成長させ、最後にALD付着を使用して上記第1のバッファ層上に、ZnOを含む第2のバッファ層を成長させることによる上記インタフェース層のALD付着のためのALD処理チャンバ、および、太陽膜ブランクを上記真空付着チャンバから上記ALD付着チャンバに移送するため、および上記太陽膜ブランクを上記CIGS付着温度から上記ALD付着温度に冷却するための、上記真空付着チャンバと上記ALD処理チャンバとの間に配置された移送チャンバによって特徴付けられる、上記処理ライン。
- 請求項14に記載の処理ラインであって、上記1つのALD処理チャンバに接続した追加ALD処理チャンバを含み、上記最初に言及したALD処理チャンバは上記第1のバッファ層の上記ALD付着のために使用され、上記追加ALD処理チャンバは上記第2のバッファ層の上記ALD付着のために使用されることを特徴とする、上記処理ライン。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE0301350A SE0301350D0 (sv) | 2003-05-08 | 2003-05-08 | A thin-film solar cell |
PCT/SE2004/000689 WO2004100250A1 (en) | 2003-05-08 | 2004-05-05 | A thin-film solar cell |
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JP2006525671A true JP2006525671A (ja) | 2006-11-09 |
JP2006525671A5 JP2006525671A5 (ja) | 2007-06-21 |
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JP2006508043A Pending JP2006525671A (ja) | 2003-05-08 | 2004-05-05 | 薄膜太陽電池 |
Country Status (6)
Country | Link |
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US (2) | US20060180200A1 (ja) |
EP (1) | EP1620888A1 (ja) |
JP (1) | JP2006525671A (ja) |
CN (1) | CN1820358B (ja) |
SE (1) | SE0301350D0 (ja) |
WO (1) | WO2004100250A1 (ja) |
Cited By (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008172244A (ja) * | 2007-01-09 | 2008-07-24 | Korea Electronics Telecommun | 電子素子用ZnO半導体膜の形成方法及び前記半導体膜を含む薄膜トランジスタ |
WO2009069582A1 (ja) * | 2007-11-30 | 2009-06-04 | Showa Shell Sekiyu K.K. | Cis系太陽電池の積層構造、cis系薄膜太陽電池の集積構造及び製造方法 |
JP2009135517A (ja) * | 2009-02-20 | 2009-06-18 | Showa Shell Sekiyu Kk | Cis系太陽電池の製造方法 |
WO2011052646A1 (ja) * | 2009-10-28 | 2011-05-05 | 京セラ株式会社 | 光電変換装置、光電変換モジュール、および光電変換装置の製造方法 |
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WO2004100250A1 (en) | 2004-11-18 |
US20060180200A1 (en) | 2006-08-17 |
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US8865512B2 (en) | 2014-10-21 |
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