WO2012115392A3 - 양면 구조를 가지는 태양전지 및 이의 제조방법 - Google Patents

양면 구조를 가지는 태양전지 및 이의 제조방법 Download PDF

Info

Publication number
WO2012115392A3
WO2012115392A3 PCT/KR2012/001188 KR2012001188W WO2012115392A3 WO 2012115392 A3 WO2012115392 A3 WO 2012115392A3 KR 2012001188 W KR2012001188 W KR 2012001188W WO 2012115392 A3 WO2012115392 A3 WO 2012115392A3
Authority
WO
WIPO (PCT)
Prior art keywords
solar cell
manufacturing same
hole
transport layer
double
Prior art date
Application number
PCT/KR2012/001188
Other languages
English (en)
French (fr)
Other versions
WO2012115392A2 (ko
Inventor
김태환
한기봉
정재훈
Original Assignee
한양대학교 산학협력단
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 한양대학교 산학협력단 filed Critical 한양대학교 산학협력단
Priority to US14/001,311 priority Critical patent/US9647163B2/en
Publication of WO2012115392A2 publication Critical patent/WO2012115392A2/ko
Publication of WO2012115392A3 publication Critical patent/WO2012115392A3/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0725—Multiple junction or tandem solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
    • H01L31/035218—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures the quantum structure being quantum dots
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
    • H01L31/035227—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures the quantum structure being quantum wires, or nanorods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0684—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells double emitter cells, e.g. bifacial solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
    • H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
    • H10K30/152—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2 the wide bandgap semiconductor comprising zinc oxide, e.g. ZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Energy (AREA)
  • Chemical & Material Sciences (AREA)
  • Sustainable Development (AREA)
  • Materials Engineering (AREA)
  • Nanotechnology (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)

Abstract

투명한 기판의 양면에 나노 구조를 가지는 태양전지 및 이의 제조방법이 개시된다. 기판을 중심으로 서로 대향하며, 전자를 수송하기 위한 구조는 산화아연 나노선으로 형성된다. 또한, 단파장의 빛을 흡수하고, 발생된 정공을 전달하기 위해 CIS 나노입자를 이용한 정공전달층이 형성된다. CIS 나노입자로 구성된 정공전달층과 대향하는 측에는 비교적 장파장의 빛을 흡수하기 위해 CIGS 나노입자를 포함하는 정공전달층이 형성된다.
PCT/KR2012/001188 2011-02-24 2012-02-17 양면 구조를 가지는 태양전지 및 이의 제조방법 WO2012115392A2 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US14/001,311 US9647163B2 (en) 2011-02-24 2012-02-17 Solar cell having a double-sided structure, and method for manufacturing same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2011-0016526 2011-02-24
KR1020110016526A KR101208272B1 (ko) 2011-02-24 2011-02-24 양면 구조를 가지는 태양전지 및 이의 제조방법

Publications (2)

Publication Number Publication Date
WO2012115392A2 WO2012115392A2 (ko) 2012-08-30
WO2012115392A3 true WO2012115392A3 (ko) 2012-11-15

Family

ID=46721307

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2012/001188 WO2012115392A2 (ko) 2011-02-24 2012-02-17 양면 구조를 가지는 태양전지 및 이의 제조방법

Country Status (3)

Country Link
US (1) US9647163B2 (ko)
KR (1) KR101208272B1 (ko)
WO (1) WO2012115392A2 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106663705A (zh) * 2014-09-24 2017-05-10 京瓷株式会社 光电变换装置以及光电变换模块

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102013221758B4 (de) * 2013-10-25 2019-05-23 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Vorrichtungen zur aussendung und/oder zum empfang elektromagnetischer strahlung und verfahren zur bereitstellung derselben
JP6441750B2 (ja) * 2014-06-24 2018-12-19 京セラ株式会社 量子ドット型太陽電池
JP6321487B2 (ja) * 2014-08-11 2018-05-09 京セラ株式会社 量子ドット太陽電池
JP6455915B2 (ja) * 2014-08-29 2019-01-23 国立大学法人電気通信大学 太陽電池
KR102310516B1 (ko) * 2014-12-19 2021-10-13 한국전기연구원 누설 전류를 저감한 비정질 셀레늄 기반 Ｘ－ｒａｙ 디텍터
JP6599729B2 (ja) * 2015-10-27 2019-10-30 京セラ株式会社 光電変換装置
KR101883951B1 (ko) 2017-01-23 2018-07-31 영남대학교 산학협력단 양면수광형 ｃｉｇｓ계 태양전지 셀 및 상기 양면수광형 ｃｉｇｓ계 태양전지 셀의 제조 방법
KR102456146B1 (ko) * 2020-10-30 2022-10-19 한국과학기술원 비-화학량론적 비결정질 금속산화물 나노구조체 제조 방법
CN112786775B (zh) * 2021-01-04 2022-11-11 国网内蒙古东部电力有限公司电力科学研究院 无源自供能用压电纳米阵列传感器及其制备方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100567330B1 (ko) * 2004-08-04 2006-04-04 한국전자통신연구원 이중구조의 염료감응 태양전지
KR20100123425A (ko) * 2009-05-15 2010-11-24 전북대학교산학협력단 양면 태양 전지창 및 이의 제조방법
KR20110001649A (ko) * 2009-06-30 2011-01-06 삼성전자주식회사 태양 전지 및 그 제조 방법

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7653560B2 (en) 2001-04-25 2010-01-26 Hueler Investment Services, Inc. Independent annuity placement system and method
US20050056312A1 (en) * 2003-03-14 2005-03-17 Young David L. Bifacial structure for tandem solar cells
JP2005332645A (ja) 2004-05-19 2005-12-02 Masahiko Yoshida 色素増感型太陽電池およびその両面光活性電極の製造方法。
US8314327B2 (en) * 2005-11-06 2012-11-20 Banpil Photonics, Inc. Photovoltaic cells based on nano or micro-scale structures
US8017860B2 (en) * 2006-05-15 2011-09-13 Stion Corporation Method and structure for thin film photovoltaic materials using bulk semiconductor materials
US7629532B2 (en) * 2006-12-29 2009-12-08 Sundiode, Inc. Solar cell having active region with nanostructures having energy wells
US20080264479A1 (en) * 2007-04-25 2008-10-30 Nanoco Technologies Limited Hybrid Photovoltaic Cells and Related Methods
US8614393B2 (en) * 2007-07-09 2013-12-24 Tallinn University Of Technology Photovoltaic cell based on zinc oxide nanorods and method for making the same
US8373061B2 (en) * 2008-04-29 2013-02-12 Hewlett-Packard Development Company, L.P. Photovoltaic cells with stacked light-absorption layers and methods of fabricating the same
US8232134B2 (en) * 2008-09-30 2012-07-31 Stion Corporation Rapid thermal method and device for thin film tandem cell
KR101040956B1 (ko) 2009-02-26 2011-06-16 전자부품연구원 산화아연 나노와이어를 이용한 박막 실리콘 태양전지 및 그의 제조방법
US8563850B2 (en) * 2009-03-16 2013-10-22 Stion Corporation Tandem photovoltaic cell and method using three glass substrate configuration
FR2947955B1 (fr) * 2009-07-08 2014-07-04 Total Sa Procede de fabrication de cellules photovoltaiques multi-jonctions et multi-electrodes
KR101103770B1 (ko) * 2009-10-12 2012-01-06 이화여자대학교 산학협력단 화합물 반도체 태양 전지 및 그 제조 방법

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100567330B1 (ko) * 2004-08-04 2006-04-04 한국전자통신연구원 이중구조의 염료감응 태양전지
KR20100123425A (ko) * 2009-05-15 2010-11-24 전북대학교산학협력단 양면 태양 전지창 및 이의 제조방법
KR20110001649A (ko) * 2009-06-30 2011-01-06 삼성전자주식회사 태양 전지 및 그 제조 방법

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106663705A (zh) * 2014-09-24 2017-05-10 京瓷株式会社 光电变换装置以及光电变换模块
CN106663705B (zh) * 2014-09-24 2018-11-06 京瓷株式会社 光电变换装置以及光电变换模块

Also Published As

Publication number Publication date
WO2012115392A2 (ko) 2012-08-30
KR20120097140A (ko) 2012-09-03
US9647163B2 (en) 2017-05-09
US20130327385A1 (en) 2013-12-12
KR101208272B1 (ko) 2012-12-10

Similar Documents

Publication Publication Date Title
WO2012115392A3 (ko) 양면 구조를 가지는 태양전지 및 이의 제조방법
WO2014042449A3 (ko) 광흡수 구조체가 구비된 태양전지
WO2012033879A3 (en) Photovoltaic devices with high work-function tco buffer layers and methods of manufacture
IL214311A0 (en) High efficiency group iii-v compound semiconductor solar cell with oxidized window layer
WO2011090300A3 (ko) 다양한 종류의 나노입자를 함유한 적층형 유기-무기 하이브리드 태양전지 및 그 제조방법
WO2012055860A3 (de) Transparente schichtverbunde
WO2011141706A3 (en) Surface-modified electrode layers in organic photovoltaic cells
WO2011122853A3 (ko) 태양광 발전장치 및 이의 제조방법
MX2009008109A (es) Celulas solares organicas hibridas con nanoparticulas semiconductoras rodeadas de modificadores de la superficie fotoactivos.
EP2760054A4 (en) MULTIPLE SOLAR CELL, CONNECTING SEMICONDUCTOR ELEMENT, PHOTOELECTRIC CONVERSION ELEMENT AND LINKED SEMICONDUCTOR LAYER WITH LAMINATED STRUCTURE
WO2012169845A3 (ko) 태양전지 기판과 그 제조방법 및 이를 이용한 태양전지
CL2014000501A1 (es) Modulo de energia fotovoltaica que comprende una pluralidad de celulas fotovoltaicas dispuestas en un conjunto incluyendo el conjunto de celulas fotovoltaica una superficie que enfrenta a una fuente de fotones que tiene una pluralidad de areas activas, un reflector que cubre por lo menos un area inactiva de la superficie que enfrenta a la fuente de fotones; un reflector; un metodo para fabricar un reflector.
WO2012165873A3 (en) Solar cell apparatus and method of fabricating the same
WO2013052381A3 (en) Wavelength conversion film having pressure sensitive adhesive layer to enhance solar harvesting efficiency
EP2760055A4 (en) SOLAR CELL WITH MULTIPLE CONNECTIONS, PHOTOELECTRIC CONVERSION ELEMENT AND COMPOSITE SURFACE / LAMINATING STRUCTURE
WO2014042447A3 (ko) 광흡수 구조체가 구비된 태양전지의 제조방법
WO2011055946A3 (ko) 태양전지 및 이의 제조방법
WO2010147393A3 (en) Solar cell and method of fabricating the same
WO2011053025A3 (ko) 태양전지 및 이의 제조방법
WO2012138194A3 (en) Solar cell and manufacturing method thereof
WO2011043609A3 (ko) 태양광 발전장치 및 이의 제조방법
WO2011002212A3 (ko) 태양광 발전장치 및 이의 제조방법
WO2012053763A3 (ko) 광산란층을 구비한 염료감응 태양전지모듈 및 그 제조 방법
WO2011148176A3 (en) Photovoltaic modules
WO2011002211A3 (ko) 태양전지 및 이의 제조방법

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 12749389

Country of ref document: EP

Kind code of ref document: A2

WWE Wipo information: entry into national phase

Ref document number: 14001311

Country of ref document: US

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 12749389

Country of ref document: EP

Kind code of ref document: A2