JP7247902B2 - エピタキシャルウェーハの製造方法 - Google Patents
エピタキシャルウェーハの製造方法 Download PDFInfo
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- JP7247902B2 JP7247902B2 JP2020002741A JP2020002741A JP7247902B2 JP 7247902 B2 JP7247902 B2 JP 7247902B2 JP 2020002741 A JP2020002741 A JP 2020002741A JP 2020002741 A JP2020002741 A JP 2020002741A JP 7247902 B2 JP7247902 B2 JP 7247902B2
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0209—Pretreatment of the material to be coated by heating
- C23C16/0218—Pretreatment of the material to be coated by heating in a reactive atmosphere
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
- C23C16/0245—Pretreatment of the material to be coated by cleaning or etching by etching with a plasma
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
- C30B25/186—Epitaxial-layer growth characterised by the substrate being specially pre-treated by, e.g. chemical or physical means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02488—Insulating materials
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02499—Monolayers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02598—Microstructure monocrystalline
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02634—Homoepitaxy
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02658—Pretreatments
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
- H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
- H01L21/2015—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate the substrate being of crystalline semiconductor material, e.g. lattice adaptation, heteroepitaxy
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
- H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
- H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
- H01L21/3225—Thermally inducing defects using oxygen present in the silicon body for intrinsic gettering
Description
以下のような導電型、直径、結晶面方位である単結晶シリコンウェーハを準備した。
基板の導電型 :p型
直径 :300mm
結晶面方位 :(100)
酸素原子層の形成において、大気中に放置した時間を7時間としたこと以外は実施例1と同じ条件でエピタキシャルウェーハの製造及び評価を行った。
実施例1及び比較例1と同じ単結晶シリコンウェーハを準備し、HF洗浄によるウェットプロセスでの自然酸化膜の除去を行った後、大気中に5時間放置して酸素原子層の形成を行った。次に、580℃の温度で単結晶シリコンウェーハ表面へのエピタキシャル成長を行った。
2…酸素原子層、
3…単結晶シリコン層、
10、10’…エピタキシャルウェーハ。
Claims (9)
- シリコンを含むIV族の元素からなるウェーハ上に単結晶シリコン層を形成するエピタキシャルウェーハの製造方法であって、
水素を含む雰囲気で前記シリコンを含むIV族の元素からなるウェーハ表面の自然酸化膜を除去する工程、
前記自然酸化膜を除去した後に前記ウェーハを酸化して酸素原子層を形成する工程、及び、
前記酸素原子層を形成した後に前記ウェーハ表面に気相成長法により単結晶シリコンをエピタキシャル成長させる工程を含み、
前記酸素原子層の酸素の平面濃度を4×1014atoms/cm2以下とすることを特徴とするエピタキシャルウェーハの製造方法。 - 前記シリコンを含むIV族の元素からなるウェーハとして、単結晶シリコンウェーハを用いることを特徴とする請求項1に記載のエピタキシャルウェーハの製造方法。
- 前記自然酸化膜を除去する工程では、前記ウェーハを水素を含む雰囲気で加熱することにより自然酸化膜を除去することを特徴とする請求項1又は請求項2に記載のエピタキシャルウェーハの製造方法。
- 前記自然酸化膜を除去する工程では、前記ウェーハを800℃以上1250℃以下の温度に加熱し、この範囲の温度を1秒以上5分以下の間保持することにより自然酸化膜を除去することを特徴とする請求項3に記載のエピタキシャルウェーハの製造方法。
- 前記自然酸化膜を除去する工程では、水素を含むプラズマを用いることにより自然酸化膜を除去することを特徴とする請求項1又は請求項2に記載のエピタキシャルウェーハの製造方法。
- 前記酸素原子層を形成する工程では、酸素を含む雰囲気で前記ウェーハを酸化することを特徴とする請求項1から請求項5のいずれか一項に記載のエピタキシャルウェーハの製造方法。
- 前記酸素原子層を形成する工程では、大気中で前記ウェーハを酸化することを特徴とする請求項1から請求項6のいずれか一項に記載のエピタキシャルウェーハの製造方法。
- 前記単結晶シリコンをエピタキシャル成長させる工程では、450℃以上800℃以下の温度でエピタキシャル成長を行うことを特徴とする請求項1から請求項7のいずれか一項に記載のエピタキシャルウェーハの製造方法。
- 前記ウェーハを酸化して酸素原子層を形成する工程と前記単結晶シリコンをエピタキシャル成長させる工程とを交互に複数回行うことを特徴とする請求項1から請求項8のいずれか一項に記載のエピタキシャルウェーハの製造方法。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2020002741A JP7247902B2 (ja) | 2020-01-10 | 2020-01-10 | エピタキシャルウェーハの製造方法 |
KR1020227022164A KR20220124696A (ko) | 2020-01-10 | 2020-11-24 | 에피택셜 웨이퍼의 제조방법 및 에피택셜 웨이퍼 |
PCT/JP2020/043540 WO2021140763A1 (ja) | 2020-01-10 | 2020-11-24 | エピタキシャルウェーハの製造方法及びエピタキシャルウェーハ |
CN202080092094.3A CN114930500A (zh) | 2020-01-10 | 2020-11-24 | 外延片的制造方法及外延片 |
EP20911506.2A EP4089720A4 (en) | 2020-01-10 | 2020-11-24 | METHOD FOR PRODUCING AN EPITACTIC WAFER AND EPITACTIC WAFER |
US17/788,373 US20230028127A1 (en) | 2020-01-10 | 2020-11-24 | Method for manufacturing epitaxial wafer and epitaxial wafer |
TW109143646A TW202130845A (zh) | 2020-01-10 | 2020-12-10 | 磊晶晶圓之製造方法及磊晶晶圓 |
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JP2020002741A JP7247902B2 (ja) | 2020-01-10 | 2020-01-10 | エピタキシャルウェーハの製造方法 |
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JP2021111696A JP2021111696A (ja) | 2021-08-02 |
JP7247902B2 true JP7247902B2 (ja) | 2023-03-29 |
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US (1) | US20230028127A1 (ja) |
EP (1) | EP4089720A4 (ja) |
JP (1) | JP7247902B2 (ja) |
KR (1) | KR20220124696A (ja) |
CN (1) | CN114930500A (ja) |
TW (1) | TW202130845A (ja) |
WO (1) | WO2021140763A1 (ja) |
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JP2024007890A (ja) * | 2022-07-06 | 2024-01-19 | 信越半導体株式会社 | エピタキシャルウェーハの製造方法 |
Citations (4)
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JP2000323689A (ja) | 1999-05-14 | 2000-11-24 | Toshiba Corp | 半導体エピタキシャル基板及びその製造方法 |
JP2005109521A (ja) | 2004-12-20 | 2005-04-21 | Sumitomo Mitsubishi Silicon Corp | 表面処理方法およびシリコンウェーハ |
JP2019004050A (ja) | 2017-06-15 | 2019-01-10 | 信越半導体株式会社 | エピタキシャルウェーハの製造方法 |
JP2019117890A (ja) | 2017-12-27 | 2019-07-18 | 株式会社Sumco | エピタキシャルウェーハの製造方法およびエピタキシャルウェーハ |
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US5422306A (en) | 1991-12-17 | 1995-06-06 | Matsushita Electric Industrial Co., Ltd. | Method of forming semiconductor hetero interfaces |
US6136684A (en) * | 1995-07-21 | 2000-10-24 | Canon Kabushiki Kaisha | Semiconductor substrate and process for production thereof |
US7153763B2 (en) | 2003-06-26 | 2006-12-26 | Rj Mears, Llc | Method for making a semiconductor device including band-engineered superlattice using intermediate annealing |
WO2005018005A1 (en) | 2003-06-26 | 2005-02-24 | Rj Mears, Llc | Semiconductor device including mosfet having band-engineered superlattice |
JP5168990B2 (ja) | 2007-04-11 | 2013-03-27 | 信越半導体株式会社 | 半導体基板の製造方法 |
JP5205840B2 (ja) | 2007-07-06 | 2013-06-05 | 信越半導体株式会社 | 半導体基板の製造方法 |
EP2770526B1 (en) | 2013-02-22 | 2018-10-03 | IMEC vzw | Oxygen monolayer on a semiconductor |
JP6861471B2 (ja) * | 2015-06-12 | 2021-04-21 | キヤノン株式会社 | 撮像装置およびその製造方法ならびにカメラ |
CN109509704A (zh) * | 2017-09-15 | 2019-03-22 | 胜高股份有限公司 | 外延硅晶片的制备方法及外延硅晶片 |
JP6794977B2 (ja) * | 2017-12-20 | 2020-12-02 | 株式会社Sumco | エピタキシャルシリコンウェーハの製造方法およびエピタキシャルシリコンウェーハ |
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2020
- 2020-01-10 JP JP2020002741A patent/JP7247902B2/ja active Active
- 2020-11-24 EP EP20911506.2A patent/EP4089720A4/en active Pending
- 2020-11-24 US US17/788,373 patent/US20230028127A1/en active Pending
- 2020-11-24 CN CN202080092094.3A patent/CN114930500A/zh active Pending
- 2020-11-24 WO PCT/JP2020/043540 patent/WO2021140763A1/ja unknown
- 2020-11-24 KR KR1020227022164A patent/KR20220124696A/ko unknown
- 2020-12-10 TW TW109143646A patent/TW202130845A/zh unknown
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000323689A (ja) | 1999-05-14 | 2000-11-24 | Toshiba Corp | 半導体エピタキシャル基板及びその製造方法 |
JP2005109521A (ja) | 2004-12-20 | 2005-04-21 | Sumitomo Mitsubishi Silicon Corp | 表面処理方法およびシリコンウェーハ |
JP2019004050A (ja) | 2017-06-15 | 2019-01-10 | 信越半導体株式会社 | エピタキシャルウェーハの製造方法 |
JP2019117890A (ja) | 2017-12-27 | 2019-07-18 | 株式会社Sumco | エピタキシャルウェーハの製造方法およびエピタキシャルウェーハ |
Also Published As
Publication number | Publication date |
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WO2021140763A1 (ja) | 2021-07-15 |
TW202130845A (zh) | 2021-08-16 |
US20230028127A1 (en) | 2023-01-26 |
CN114930500A (zh) | 2022-08-19 |
EP4089720A1 (en) | 2022-11-16 |
KR20220124696A (ko) | 2022-09-14 |
JP2021111696A (ja) | 2021-08-02 |
EP4089720A4 (en) | 2024-01-17 |
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