JP2019004050A - エピタキシャルウェーハの製造方法 - Google Patents
エピタキシャルウェーハの製造方法 Download PDFInfo
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- JP2019004050A JP2019004050A JP2017117752A JP2017117752A JP2019004050A JP 2019004050 A JP2019004050 A JP 2019004050A JP 2017117752 A JP2017117752 A JP 2017117752A JP 2017117752 A JP2017117752 A JP 2017117752A JP 2019004050 A JP2019004050 A JP 2019004050A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 131
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 131
- 239000010703 silicon Substances 0.000 claims abstract description 131
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 97
- 239000001301 oxygen Substances 0.000 claims abstract description 97
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 97
- 239000000758 substrate Substances 0.000 claims abstract description 48
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 26
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 25
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 19
- 229910052796 boron Inorganic materials 0.000 claims abstract description 19
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 18
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 17
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 15
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 15
- 229910052718 tin Inorganic materials 0.000 claims abstract description 14
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 11
- 239000011574 phosphorus Substances 0.000 claims abstract description 11
- 239000007789 gas Substances 0.000 claims description 131
- 238000000034 method Methods 0.000 claims description 30
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 12
- 229910001882 dioxygen Inorganic materials 0.000 claims description 12
- 125000004429 atom Chemical group 0.000 claims description 9
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 claims description 8
- 125000004433 nitrogen atom Chemical group N* 0.000 claims description 6
- 125000002524 organometallic group Chemical group 0.000 claims description 6
- 125000004430 oxygen atom Chemical group O* 0.000 description 25
- 239000000460 chlorine Substances 0.000 description 23
- 238000005247 gettering Methods 0.000 description 19
- 229910052801 chlorine Inorganic materials 0.000 description 17
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 14
- 230000000694 effects Effects 0.000 description 12
- 238000010926 purge Methods 0.000 description 12
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002994 raw material Substances 0.000 description 10
- 125000001309 chloro group Chemical group Cl* 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 150000001721 carbon Chemical group 0.000 description 8
- 239000002019 doping agent Substances 0.000 description 6
- 238000000231 atomic layer deposition Methods 0.000 description 5
- 239000012535 impurity Substances 0.000 description 4
- 125000004437 phosphorous atom Chemical group 0.000 description 4
- ZRLCXMPFXYVHGS-UHFFFAOYSA-N tetramethylgermane Chemical compound C[Ge](C)(C)C ZRLCXMPFXYVHGS-UHFFFAOYSA-N 0.000 description 4
- VXKWYPOMXBVZSJ-UHFFFAOYSA-N tetramethyltin Chemical compound C[Sn](C)(C)C VXKWYPOMXBVZSJ-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 238000001556 precipitation Methods 0.000 description 3
- 238000001179 sorption measurement Methods 0.000 description 3
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- 239000005046 Chlorosilane Substances 0.000 description 1
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical class Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 1
- 229910021480 group 4 element Inorganic materials 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
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Abstract
Description
まず、シリコン基板上のエピタキシャル層中に酸素原子層を導入する場合について説明する。
次に、シリコン基板上のエピタキシャル層中に炭素原子層を導入する場合について説明する。基本的には、上記の酸素原子層を導入する場合と同様であるため、重複する記載は省略する。
次に、シリコン基板上のエピタキシャル層中に窒素原子層を導入する場合について説明する。基本的には、上記の酸素原子層を導入する場合と同様であるため、重複する記載は省略する。
次に、シリコン基板上のエピタキシャル層中にゲルマニウム原子層を導入する場合について説明する。基本的には、上記の酸素原子層を導入する場合と同様であるため、重複する記載は省略する。
次に、シリコン基板上のエピタキシャル層中にスズ原子層を導入する場合について説明する。基本的には、上記の酸素原子層を導入する場合と同様であるため、重複する記載は省略する。
次に、シリコン基板上のエピタキシャル層中にホウ素原子層又はリン原子層を導入する場合について説明する。基本的には、上記の酸素原子層を導入する場合と同様であるため、重複する記載は省略する。
以下のようにして、図1に示す態様のエピタキシャルウェーハ100を製造した。抵抗率10Ω・cmのボロンドープ、直径200mmのシリコン基板10を材料として、まず、第1のエピタキシャル成長を行った(シリコンエピタキシャル層21)。シリコン原料ガスはSiH4として550℃で成長を行った。膜厚に応じてシリコン原料ガスを流す時間を設定するが、成長レートは遅い方がよいため、0.05nm/秒とし、シリコンエピタキシャル層21の厚さは10nmとした。次に酸素ガス10L/分を1×10−8Torrで360秒の時間だけリアクタに導入し、酸素原子層31をおよそ5nm成長させた。次に、また第1のシリコンエピタキシャル層21と同じ条件でシリコン原料ガスを導入し第2のシリコンエピタキシャル層22の一部を10nm形成した。
以下のようにして、図2に示す態様のエピタキシャルウェーハ200を製造した。抵抗率10Ω・cmのボロンドープ、直径200mmのシリコン基板10を材料として、まず、第1のエピタキシャル成長を行った(シリコンエピタキシャル層21)。シリコン原料ガスはSiH4として550℃で成長を行った。膜厚に応じてシリコン原料ガスを流す時間を設定するが、成長レートは遅い方がよいため、0.05nm/秒とし、シリコンエピタキシャル層21の厚さは10nmとした。次に酸素ガス6L/分を1×10−8Torrで100秒の時間だけリアクタに導入し、酸素原子層を1原子層成長させた。また第1のエピタキシャル層と同じ条件でシリコン原料ガスを導入し第2のシリコンエピタキシャル層22を10nm形成した。
抵抗率10Ω・cmのボロンドープ、直径200mmシリコン基板を材料として、第1のエピタキシャル成長を行った。原料ガスはSiH4として550℃で成長を行った。膜厚に応じてシリコン原料ガスを流す時間を設定するが、成長レートは遅い方がよいため、0.05nm/秒とし、シリコンエピタキシャル層の厚さは10nmとした。次に酸素10L/分を 1×10−8Torrで720秒の時間だけリアクタに導入し、酸素原子層を10nm成長させた。次に、また第1のエピタキシャル層と同じ条件でシリコン原料ガスを導入し第2のエピタキシャル層を形成しようとしたが、酸素層が厚くなっており、エピタキシャル成長が出来ず、多結晶シリコンとなった。このように酸素原子層が厚いと第2のシリコンエピタキシャル層が単結晶にならないことがわかる。
抵抗率10Ω・cmのボロンドープ、直径200mmのシリコン基板を材料として、第1のエピタキシャル成長を行った。原料ガスはSiH2Cl2として1100℃で成長を行った。膜厚に応じてシリコン原料ガスを流す時間を設定するが、成長レートは遅い方がよいため、0.05nm/秒とし、シリコンエピタキシャル層の厚さは10nmとした。次に酸素10L/分を1×10−8Torrで100秒の時間だけリアクタに導入し、酸素原子層を1層成長させた。次に、また第1のエピタキシャル層と同じ条件でシリコン原料ガスを導入し第2のエピタキシャル層を形成しようとしたが、原料ガスに塩素が含まれており、酸素原子層がエッチングされて消失してしまった。
以下のようにして、図1に示す態様のエピタキシャルウェーハ100であって、原子層として炭素原子層31をエピタキシャル層中に有するものを製造した。抵抗率10Ω・cmのボロンドープ、直径200mmのシリコン基板10を材料として、まず、第1のエピタキシャル成長を行った(シリコンエピタキシャル層21)。シリコン原料ガスはSiH4として550℃で成長を行った。膜厚に応じてシリコン原料ガスを流す時間を設定するが、成長レートは遅い方がよいため、0.05nm/秒とし、シリコンエピタキシャル層21の厚さは10nmとした。次にCH4ガス10L/分を1×10−8Torrで360秒の時間だけリアクタに導入し、炭素原子層31をおよそ2nm成長させた。次に、また第1のシリコンエピタキシャル層21と同じ条件でシリコン原料ガスを導入し第2のシリコンエピタキシャル層22の一部を10nm形成した。
21、22、23、24、25、26…シリコンエピタキシャル層、
31、32、33、34、35…(酸素等の)原子層、
40…(酸素等の)原子層とシリコンエピタキシャル層の繰り返し5組、
50、60…(酸素等の)原子層を有するエピタキシャル層、
100、200…エピタキシャルウェーハ。
Claims (6)
- シリコン基板上にエピタキシャル層を形成するエピタキシャルウェーハの製造方法であって、
前記エピタキシャル層中に、酸素、炭素、窒素、ゲルマニウム、スズ、ホウ素及びリンからなる群から選ばれる1種の元素の原子からなり、厚さが5nm以下である原子層を形成する工程を有し、
前記原子層に接するエピタキシャル層の形成を、SiH4ガスを用いて行うことを特徴とするエピタキシャルウェーハの製造方法。 - 前記原子層を、1原子層として形成することを特徴とする請求項1に記載のエピタキシャルウェーハの製造方法。
- 前記エピタキシャル層の領域のうち、前記原子層に接し、少なくとも該原子層から5nmまでの領域を、SiH4ガスを用いて形成することを特徴とする請求項1又は請求項2に記載のエピタキシャルウェーハの製造方法。
- 前記原子層を、前記エピタキシャル層中に複数層形成することを特徴とする請求項1から請求項3のいずれか1項に記載のエピタキシャルウェーハの製造方法。
- 前記エピタキシャル層の領域のうち、前記SiH4ガスを用いて形成する領域以外の領域を、SiH2Cl2ガス又はSiHCl3ガスを用いて形成することを特徴とする請求項1から請求項4のいずれか1項に記載のエピタキシャルウェーハの製造方法。
- 前記原子層の形成を、
酸素原子層を形成する場合は酸素ガスを、
炭素原子層を形成する場合はCH4ガスを、
窒素原子層を形成する場合はNH3ガスを、
ゲルマニウム原子層を形成する場合はGeを含む有機金属ガスを、
スズ原子層を形成する場合はSnを含む有機金属ガスを、
ホウ素原子層を形成する場合はB2H6ガスを、
リン原子層を形成する場合はPH3ガスを、
用いて行うことを特徴とする請求項1から請求項5のいずれか1項に記載のエピタキシャルウェーハの製造方法。
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