JP2009212502A5 - - Google Patents
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- Publication number
- JP2009212502A5 JP2009212502A5 JP2009022151A JP2009022151A JP2009212502A5 JP 2009212502 A5 JP2009212502 A5 JP 2009212502A5 JP 2009022151 A JP2009022151 A JP 2009022151A JP 2009022151 A JP2009022151 A JP 2009022151A JP 2009212502 A5 JP2009212502 A5 JP 2009212502A5
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- single crystal
- substrate
- crystal semiconductor
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims 31
- 239000004065 semiconductor Substances 0.000 claims 17
- 239000013078 crystal Substances 0.000 claims 15
- 238000000034 method Methods 0.000 claims 8
- 238000004519 manufacturing process Methods 0.000 claims 7
- 230000001590 oxidative effect Effects 0.000 claims 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims 3
- 125000001309 chloro group Chemical group Cl* 0.000 claims 3
- 238000010438 heat treatment Methods 0.000 claims 3
- 229910000041 hydrogen chloride Inorganic materials 0.000 claims 3
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 claims 3
- 230000003647 oxidation Effects 0.000 claims 3
- 238000007254 oxidation reaction Methods 0.000 claims 3
- 238000009832 plasma treatment Methods 0.000 claims 3
- KFUSEUYYWQURPO-OWOJBTEDSA-N trans-1,2-dichloroethene Chemical group Cl\C=C\Cl KFUSEUYYWQURPO-OWOJBTEDSA-N 0.000 claims 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims 2
- 239000000460 chlorine Substances 0.000 claims 2
- 229910052801 chlorine Inorganic materials 0.000 claims 2
- 229910001882 dioxygen Inorganic materials 0.000 claims 2
- 239000012212 insulator Substances 0.000 claims 2
- 150000002500 ions Chemical class 0.000 claims 2
- 230000001678 irradiating effect Effects 0.000 claims 2
- 239000011521 glass Substances 0.000 claims 1
- 238000000926 separation method Methods 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009022151A JP5500833B2 (ja) | 2008-02-04 | 2009-02-03 | Ｓｏｉ基板の作製方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008024520 | 2008-02-04 | ||
| JP2008024520 | 2008-02-04 | ||
| JP2009022151A JP5500833B2 (ja) | 2008-02-04 | 2009-02-03 | Ｓｏｉ基板の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009212502A JP2009212502A (ja) | 2009-09-17 |
| JP2009212502A5 true JP2009212502A5 (enExample) | 2012-02-02 |
| JP5500833B2 JP5500833B2 (ja) | 2014-05-21 |
Family
ID=40939235
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009022151A Expired - Fee Related JP5500833B2 (ja) | 2008-02-04 | 2009-02-03 | Ｓｏｉ基板の作製方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US8119490B2 (enExample) |
| JP (1) | JP5500833B2 (enExample) |
| CN (1) | CN101510524B (enExample) |
| TW (1) | TWI494974B (enExample) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5663150B2 (ja) * | 2008-07-22 | 2015-02-04 | 株式会社半導体エネルギー研究所 | Ｓｏｉ基板の作製方法 |
| JP4333820B1 (ja) * | 2009-01-19 | 2009-09-16 | 住友電気工業株式会社 | 化合物半導体基板 |
| WO2011070892A1 (en) * | 2009-12-08 | 2011-06-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US9299852B2 (en) * | 2011-06-16 | 2016-03-29 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| CN102569501B (zh) * | 2011-12-15 | 2014-06-18 | 苏州阿特斯阳光电力科技有限公司 | 一种多晶硅太阳能电池的磷扩散方法 |
| US10103021B2 (en) | 2012-01-12 | 2018-10-16 | Shin-Etsu Chemical Co., Ltd. | Thermally oxidized heterogeneous composite substrate and method for manufacturing same |
| TWI645578B (zh) | 2012-07-05 | 2018-12-21 | 半導體能源研究所股份有限公司 | 發光裝置及發光裝置的製造方法 |
| KR102173801B1 (ko) | 2012-07-12 | 2020-11-04 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치, 및 표시 장치의 제작 방법 |
| CN105448657A (zh) * | 2014-09-02 | 2016-03-30 | 无锡华润上华半导体有限公司 | 一种改善高压器件阈值电压均匀性的方法 |
| CN104952791A (zh) * | 2015-06-26 | 2015-09-30 | 深圳市华星光电技术有限公司 | Amoled显示器件的制作方法及其结构 |
| US11289330B2 (en) | 2019-09-30 | 2022-03-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor-on-insulator (SOI) substrate and method for forming |
| CN114188270B (zh) * | 2021-12-09 | 2024-11-22 | 北京工业大学 | 一种基于基质面化学反应的固体薄膜剥离方法 |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0254532A (ja) | 1988-08-17 | 1990-02-23 | Sony Corp | Ｓｏｉ基板の製造方法 |
| US5362667A (en) * | 1992-07-28 | 1994-11-08 | Harris Corporation | Bonded wafer processing |
| KR970052022A (ko) * | 1995-12-30 | 1997-07-29 | 김주용 | 에스 오 아이 기판 제조방법 |
| JPH10284431A (ja) * | 1997-04-11 | 1998-10-23 | Sharp Corp | Ｓｏｉ基板の製造方法 |
| US6534380B1 (en) * | 1997-07-18 | 2003-03-18 | Denso Corporation | Semiconductor substrate and method of manufacturing the same |
| JPH11163363A (ja) * | 1997-11-22 | 1999-06-18 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| JP2000124092A (ja) | 1998-10-16 | 2000-04-28 | Shin Etsu Handotai Co Ltd | 水素イオン注入剥離法によってｓｏｉウエーハを製造する方法およびこの方法で製造されたｓｏｉウエーハ |
| CN1118087C (zh) * | 1999-09-27 | 2003-08-13 | 中国科学院半导体研究所 | 一种制备半导体衬底的方法 |
| US6737337B1 (en) * | 2001-04-27 | 2004-05-18 | Advanced Micro Devices, Inc. | Method of preventing dopant depletion in surface semiconductor layer of semiconductor-on-insulator (SOI) device |
| US20030134486A1 (en) * | 2002-01-16 | 2003-07-17 | Zhongze Wang | Semiconductor-on-insulator comprising integrated circuitry |
| US7119365B2 (en) * | 2002-03-26 | 2006-10-10 | Sharp Kabushiki Kaisha | Semiconductor device and manufacturing method thereof, SOI substrate and display device using the same, and manufacturing method of the SOI substrate |
| JP4772258B2 (ja) | 2002-08-23 | 2011-09-14 | シャープ株式会社 | Ｓｏｉ基板の製造方法 |
| US7109092B2 (en) * | 2003-05-19 | 2006-09-19 | Ziptronix, Inc. | Method of room temperature covalent bonding |
| WO2005055293A1 (ja) * | 2003-12-02 | 2005-06-16 | Bondtech Inc. | 接合方法及びこの方法により作成されるデバイス並びに表面活性化装置及びこの装置を備えた接合装置 |
| FR2868599B1 (fr) * | 2004-03-30 | 2006-07-07 | Soitec Silicon On Insulator | Traitement chimique optimise de type sc1 pour le nettoyage de plaquettes en materiau semiconducteur |
| US7148124B1 (en) * | 2004-11-18 | 2006-12-12 | Alexander Yuri Usenko | Method for forming a fragile layer inside of a single crystalline substrate preferably for making silicon-on-insulator wafers |
| FR2884966B1 (fr) * | 2005-04-22 | 2007-08-17 | Soitec Silicon On Insulator | Procede de collage de deux tranches realisees dans des materiaux choisis parmi les materiaux semiconducteurs |
| FR2888663B1 (fr) * | 2005-07-13 | 2008-04-18 | Soitec Silicon On Insulator | Procede de diminution de la rugosite d'une couche epaisse d'isolant |
-
2009
- 2009-01-12 US US12/352,176 patent/US8119490B2/en not_active Expired - Fee Related
- 2009-02-02 TW TW098103240A patent/TWI494974B/zh not_active IP Right Cessation
- 2009-02-03 JP JP2009022151A patent/JP5500833B2/ja not_active Expired - Fee Related
- 2009-02-04 CN CN2009100057935A patent/CN101510524B/zh not_active Expired - Fee Related