JP2010272851A5 - - Google Patents
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- Publication number
- JP2010272851A5 JP2010272851A5 JP2010093842A JP2010093842A JP2010272851A5 JP 2010272851 A5 JP2010272851 A5 JP 2010272851A5 JP 2010093842 A JP2010093842 A JP 2010093842A JP 2010093842 A JP2010093842 A JP 2010093842A JP 2010272851 A5 JP2010272851 A5 JP 2010272851A5
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- bond
- bond substrate
- manufacturing
- heat treatment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims 27
- 238000000034 method Methods 0.000 claims 8
- 238000010438 heat treatment Methods 0.000 claims 7
- 238000004519 manufacturing process Methods 0.000 claims 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 4
- 239000001301 oxygen Substances 0.000 claims 4
- 229910052760 oxygen Inorganic materials 0.000 claims 4
- 239000012298 atmosphere Substances 0.000 claims 3
- 229910052757 nitrogen Inorganic materials 0.000 claims 3
- 239000012300 argon atmosphere Substances 0.000 claims 2
- 239000004065 semiconductor Substances 0.000 claims 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims 1
- 239000000460 chlorine Substances 0.000 claims 1
- 229910052801 chlorine Inorganic materials 0.000 claims 1
- 230000001678 irradiating effect Effects 0.000 claims 1
- 238000005498 polishing Methods 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010093842A JP5721962B2 (ja) | 2009-04-22 | 2010-04-15 | Soi基板の作製方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009104203 | 2009-04-22 | ||
| JP2009104203 | 2009-04-22 | ||
| JP2010093842A JP5721962B2 (ja) | 2009-04-22 | 2010-04-15 | Soi基板の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2010272851A JP2010272851A (ja) | 2010-12-02 |
| JP2010272851A5 true JP2010272851A5 (enExample) | 2013-05-16 |
| JP5721962B2 JP5721962B2 (ja) | 2015-05-20 |
Family
ID=42992513
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010093842A Expired - Fee Related JP5721962B2 (ja) | 2009-04-22 | 2010-04-15 | Soi基板の作製方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US8168481B2 (enExample) |
| JP (1) | JP5721962B2 (enExample) |
| KR (1) | KR101752350B1 (enExample) |
| CN (1) | CN101872740B (enExample) |
| SG (2) | SG166060A1 (enExample) |
Families Citing this family (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8318588B2 (en) * | 2009-08-25 | 2012-11-27 | Semiconductor Energy Laboratory Co., Ltd. | Method for reprocessing semiconductor substrate, method for manufacturing reprocessed semiconductor substrate, and method for manufacturing SOI substrate |
| WO2011043178A1 (en) * | 2009-10-09 | 2011-04-14 | Semiconductor Energy Laboratory Co., Ltd. | Reprocessing method of semiconductor substrate, manufacturing method of reprocessed semiconductor substrate, and manufacturing method of soi substrate |
| US9299556B2 (en) * | 2010-12-27 | 2016-03-29 | Shanghai Simgui Technology Co. Ltd. | Method for preparing semiconductor substrate with insulating buried layer gettering process |
| US8735263B2 (en) | 2011-01-21 | 2014-05-27 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing SOI substrate |
| US9123529B2 (en) | 2011-06-21 | 2015-09-01 | Semiconductor Energy Laboratory Co., Ltd. | Method for reprocessing semiconductor substrate, method for manufacturing reprocessed semiconductor substrate, and method for manufacturing SOI substrate |
| JP2013093434A (ja) * | 2011-10-26 | 2013-05-16 | Semiconductor Energy Lab Co Ltd | 半導体基板の解析方法 |
| US10103021B2 (en) | 2012-01-12 | 2018-10-16 | Shin-Etsu Chemical Co., Ltd. | Thermally oxidized heterogeneous composite substrate and method for manufacturing same |
| US8879275B2 (en) * | 2012-02-21 | 2014-11-04 | International Business Machines Corporation | Anti-corrosion conformal coating comprising modified porous silica fillers for metal conductors electrically connecting an electronic component |
| CN104488081B (zh) * | 2012-07-25 | 2017-09-19 | 信越化学工业株式会社 | Sos基板的制造方法和sos基板 |
| US9196503B2 (en) * | 2012-08-23 | 2015-11-24 | Michael Xiaoxuan Yang | Methods for fabricating devices on semiconductor substrates |
| AU2014228794B2 (en) | 2013-03-15 | 2019-04-18 | The Regents Of The University Of California | Multi-site transcutaneous electrical stimulation of the spinal cord for facilitation of locomotion |
| US10190235B2 (en) * | 2013-05-24 | 2019-01-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Wafer supporting structure and method for forming the same |
| AU2014324660A1 (en) | 2013-09-27 | 2016-04-21 | The Regents Of The University Of California | Engaging the cervical spinal cord circuitry to re-enable volitional control of hand function in tetraplegic subjects |
| EP3127141B1 (de) * | 2014-04-01 | 2021-03-24 | EV Group E. Thallner GmbH | Verfahren zur oberflächenreinigung von substraten |
| US9425063B2 (en) * | 2014-06-19 | 2016-08-23 | Infineon Technologies Ag | Method of reducing an impurity concentration in a semiconductor body, method of manufacturing a semiconductor device and semiconductor device |
| US11235154B2 (en) | 2017-02-17 | 2022-02-01 | The University Of British Columbia | Apparatus and methods for maintaining physiological functions |
| US12434068B2 (en) | 2017-05-23 | 2025-10-07 | The Regents Of The University Of California | Accessing spinal networks to address sexual dysfunction |
| DE20168827T1 (de) | 2017-06-30 | 2021-01-21 | Gtx Medical B.V. | System zur neuromodulierung |
| US12357828B2 (en) | 2017-12-05 | 2025-07-15 | Ecole Polytechnique Federale De Lausanne (Epfl) | System for planning and/or providing neuromodulation |
| WO2019110400A1 (en) | 2017-12-05 | 2019-06-13 | Ecole Polytechnique Federale De Lausanne (Epfl) | A system for planning and/or providing neuromodulation |
| US12478777B2 (en) | 2018-08-23 | 2025-11-25 | The Regents Of The University Of California | Non-invasive spinal cord stimulation for nerve root palsy, cauda equina syndrome, and restoration of upper extremity function |
| EP3653260A1 (en) | 2018-11-13 | 2020-05-20 | GTX medical B.V. | Sensor in clothing of limbs or footwear |
| DE18205821T1 (de) | 2018-11-13 | 2020-12-24 | Gtx Medical B.V. | Steuerungssystem zur bewegungsrekonstruktion und/oder wiederherstellung für einen patienten |
| EP3695878B1 (en) | 2019-02-12 | 2023-04-19 | ONWARD Medical N.V. | A system for neuromodulation |
| EP3827871A1 (en) | 2019-11-27 | 2021-06-02 | ONWARD Medical B.V. | Neuromodulation system |
| EP3827875B1 (en) | 2019-11-27 | 2023-07-05 | ONWARD Medical N.V. | Neuromodulation system |
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| DE2550371A1 (de) * | 1975-11-10 | 1977-05-12 | Ibm Deutschland | Verfahren zum thermischen oxydieren von silicium |
| FR2681472B1 (fr) | 1991-09-18 | 1993-10-29 | Commissariat Energie Atomique | Procede de fabrication de films minces de materiau semiconducteur. |
| FR2715501B1 (fr) | 1994-01-26 | 1996-04-05 | Commissariat Energie Atomique | Procédé de dépôt de lames semiconductrices sur un support. |
| JP4103968B2 (ja) | 1996-09-18 | 2008-06-18 | 株式会社半導体エネルギー研究所 | 絶縁ゲイト型半導体装置 |
| US6534380B1 (en) | 1997-07-18 | 2003-03-18 | Denso Corporation | Semiconductor substrate and method of manufacturing the same |
| US6388652B1 (en) | 1997-08-20 | 2002-05-14 | Semiconductor Energy Laboratory Co., Ltd. | Electrooptical device |
| US6686623B2 (en) | 1997-11-18 | 2004-02-03 | Semiconductor Energy Laboratory Co., Ltd. | Nonvolatile memory and electronic apparatus |
| TW508378B (en) * | 1998-03-09 | 2002-11-01 | Shinetsu Handotai Kk | A method for producing a silicon single crystal wafer and a silicon single crystal wafer |
| JPH11307747A (ja) * | 1998-04-17 | 1999-11-05 | Nec Corp | Soi基板およびその製造方法 |
| JP3500063B2 (ja) | 1998-04-23 | 2004-02-23 | 信越半導体株式会社 | 剥離ウエーハを再利用する方法および再利用に供されるシリコンウエーハ |
| TW505709B (en) * | 1998-05-22 | 2002-10-11 | Shinetsu Handotai Kk | A method for producing an epitaxial silicon single crystal wafer and the epitaxial silicon single crystal wafer |
| JP2000012864A (ja) | 1998-06-22 | 2000-01-14 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
| US6271101B1 (en) | 1998-07-29 | 2001-08-07 | Semiconductor Energy Laboratory Co., Ltd. | Process for production of SOI substrate and process for production of semiconductor device |
| JP4476390B2 (ja) | 1998-09-04 | 2010-06-09 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP2000349264A (ja) * | 1998-12-04 | 2000-12-15 | Canon Inc | 半導体ウエハの製造方法、使用方法および利用方法 |
| JP2000349266A (ja) | 1999-03-26 | 2000-12-15 | Canon Inc | 半導体部材の製造方法、半導体基体の利用方法、半導体部材の製造システム、半導体部材の生産管理方法及び堆積膜形成装置の利用方法 |
| JP4379943B2 (ja) | 1999-04-07 | 2009-12-09 | 株式会社デンソー | 半導体基板の製造方法および半導体基板製造装置 |
| JP2001144275A (ja) * | 1999-08-27 | 2001-05-25 | Shin Etsu Handotai Co Ltd | 貼り合わせsoiウエーハの製造方法および貼り合わせsoiウエーハ |
| KR100682190B1 (ko) * | 1999-09-07 | 2007-02-12 | 동경 엘렉트론 주식회사 | 실리콘 산질화물을 포함하는 절연막의 형성 방법 및 장치 |
| US6846718B1 (en) * | 1999-10-14 | 2005-01-25 | Shin-Etsu Handotai Co., Ltd. | Method for producing SOI wafer and SOI wafer |
| JP3943782B2 (ja) | 1999-11-29 | 2007-07-11 | 信越半導体株式会社 | 剥離ウエーハの再生処理方法及び再生処理された剥離ウエーハ |
| JP2002110949A (ja) * | 2000-09-28 | 2002-04-12 | Canon Inc | Soiの熱処理方法及び製造方法 |
| US7119365B2 (en) | 2002-03-26 | 2006-10-10 | Sharp Kabushiki Kaisha | Semiconductor device and manufacturing method thereof, SOI substrate and display device using the same, and manufacturing method of the SOI substrate |
| JP4772258B2 (ja) | 2002-08-23 | 2011-09-14 | シャープ株式会社 | Soi基板の製造方法 |
| US7508034B2 (en) | 2002-09-25 | 2009-03-24 | Sharp Kabushiki Kaisha | Single-crystal silicon substrate, SOI substrate, semiconductor device, display device, and manufacturing method of semiconductor device |
| JP2004134675A (ja) | 2002-10-11 | 2004-04-30 | Sharp Corp | Soi基板、表示装置およびsoi基板の製造方法 |
| JP4699675B2 (ja) * | 2002-10-08 | 2011-06-15 | 信越半導体株式会社 | アニールウェーハの製造方法 |
| JP2004193515A (ja) * | 2002-12-13 | 2004-07-08 | Shin Etsu Handotai Co Ltd | Soiウエーハの製造方法 |
| US6809370B1 (en) * | 2003-07-31 | 2004-10-26 | Texas Instruments Incorporated | High-k gate dielectric with uniform nitrogen profile and methods for making the same |
| US7052978B2 (en) * | 2003-08-28 | 2006-05-30 | Intel Corporation | Arrangements incorporating laser-induced cleaving |
| JP5110772B2 (ja) | 2004-02-03 | 2012-12-26 | 株式会社半導体エネルギー研究所 | 半導体薄膜層を有する基板の製造方法 |
| JP2006294737A (ja) * | 2005-04-07 | 2006-10-26 | Sumco Corp | Soi基板の製造方法及びその製造における剥離ウェーハの再生処理方法。 |
| JP4715470B2 (ja) | 2005-11-28 | 2011-07-06 | 株式会社Sumco | 剥離ウェーハの再生加工方法及びこの方法により再生加工された剥離ウェーハ |
| EP1835533B1 (en) | 2006-03-14 | 2020-06-03 | Soitec | Method for manufacturing compound material wafers and method for recycling a used donor substrate |
| FR2899380B1 (fr) | 2006-03-31 | 2008-08-29 | Soitec Sa | Procede de revelation de defauts cristallins dans un substrat massif. |
| JP5314838B2 (ja) * | 2006-07-14 | 2013-10-16 | 信越半導体株式会社 | 剥離ウェーハを再利用する方法 |
| EP1978554A3 (en) * | 2007-04-06 | 2011-10-12 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor substrate comprising implantation and separation steps |
| JP5289805B2 (ja) * | 2007-05-10 | 2013-09-11 | 株式会社半導体エネルギー研究所 | 半導体装置製造用基板の作製方法 |
| EP1993127B1 (en) * | 2007-05-18 | 2013-04-24 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of SOI substrate |
| US20090004764A1 (en) * | 2007-06-29 | 2009-01-01 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing SOI substrate and method for manufacturing semiconductor device |
| KR101499175B1 (ko) | 2007-10-04 | 2015-03-05 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 기판의 제조방법 |
| JP2009272471A (ja) * | 2008-05-08 | 2009-11-19 | Sumco Corp | 貼り合わせウェーハの製造方法 |
| US20100022070A1 (en) | 2008-07-22 | 2010-01-28 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing soi substrate |
-
2010
- 2010-04-06 SG SG201002398-4A patent/SG166060A1/en unknown
- 2010-04-06 SG SG2012056420A patent/SG183670A1/en unknown
- 2010-04-13 KR KR1020100033771A patent/KR101752350B1/ko not_active Expired - Fee Related
- 2010-04-15 JP JP2010093842A patent/JP5721962B2/ja not_active Expired - Fee Related
- 2010-04-19 US US12/762,675 patent/US8168481B2/en not_active Expired - Fee Related
- 2010-04-20 CN CN201010167278.XA patent/CN101872740B/zh not_active Expired - Fee Related
-
2012
- 2012-04-24 US US13/454,114 patent/US8486772B2/en not_active Expired - Fee Related
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