JP2010272851A5 - - Google Patents

Download PDF

Info

Publication number
JP2010272851A5
JP2010272851A5 JP2010093842A JP2010093842A JP2010272851A5 JP 2010272851 A5 JP2010272851 A5 JP 2010272851A5 JP 2010093842 A JP2010093842 A JP 2010093842A JP 2010093842 A JP2010093842 A JP 2010093842A JP 2010272851 A5 JP2010272851 A5 JP 2010272851A5
Authority
JP
Japan
Prior art keywords
substrate
bond
bond substrate
manufacturing
heat treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2010093842A
Other languages
English (en)
Japanese (ja)
Other versions
JP2010272851A (ja
JP5721962B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2010093842A priority Critical patent/JP5721962B2/ja
Priority claimed from JP2010093842A external-priority patent/JP5721962B2/ja
Publication of JP2010272851A publication Critical patent/JP2010272851A/ja
Publication of JP2010272851A5 publication Critical patent/JP2010272851A5/ja
Application granted granted Critical
Publication of JP5721962B2 publication Critical patent/JP5721962B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2010093842A 2009-04-22 2010-04-15 Soi基板の作製方法 Expired - Fee Related JP5721962B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2010093842A JP5721962B2 (ja) 2009-04-22 2010-04-15 Soi基板の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2009104203 2009-04-22
JP2009104203 2009-04-22
JP2010093842A JP5721962B2 (ja) 2009-04-22 2010-04-15 Soi基板の作製方法

Publications (3)

Publication Number Publication Date
JP2010272851A JP2010272851A (ja) 2010-12-02
JP2010272851A5 true JP2010272851A5 (enExample) 2013-05-16
JP5721962B2 JP5721962B2 (ja) 2015-05-20

Family

ID=42992513

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010093842A Expired - Fee Related JP5721962B2 (ja) 2009-04-22 2010-04-15 Soi基板の作製方法

Country Status (5)

Country Link
US (2) US8168481B2 (enExample)
JP (1) JP5721962B2 (enExample)
KR (1) KR101752350B1 (enExample)
CN (1) CN101872740B (enExample)
SG (2) SG166060A1 (enExample)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8318588B2 (en) * 2009-08-25 2012-11-27 Semiconductor Energy Laboratory Co., Ltd. Method for reprocessing semiconductor substrate, method for manufacturing reprocessed semiconductor substrate, and method for manufacturing SOI substrate
WO2011043178A1 (en) * 2009-10-09 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Reprocessing method of semiconductor substrate, manufacturing method of reprocessed semiconductor substrate, and manufacturing method of soi substrate
US9299556B2 (en) * 2010-12-27 2016-03-29 Shanghai Simgui Technology Co. Ltd. Method for preparing semiconductor substrate with insulating buried layer gettering process
US8735263B2 (en) 2011-01-21 2014-05-27 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing SOI substrate
US9123529B2 (en) 2011-06-21 2015-09-01 Semiconductor Energy Laboratory Co., Ltd. Method for reprocessing semiconductor substrate, method for manufacturing reprocessed semiconductor substrate, and method for manufacturing SOI substrate
JP2013093434A (ja) * 2011-10-26 2013-05-16 Semiconductor Energy Lab Co Ltd 半導体基板の解析方法
US10103021B2 (en) 2012-01-12 2018-10-16 Shin-Etsu Chemical Co., Ltd. Thermally oxidized heterogeneous composite substrate and method for manufacturing same
US8879275B2 (en) * 2012-02-21 2014-11-04 International Business Machines Corporation Anti-corrosion conformal coating comprising modified porous silica fillers for metal conductors electrically connecting an electronic component
CN104488081B (zh) * 2012-07-25 2017-09-19 信越化学工业株式会社 Sos基板的制造方法和sos基板
US9196503B2 (en) * 2012-08-23 2015-11-24 Michael Xiaoxuan Yang Methods for fabricating devices on semiconductor substrates
AU2014228794B2 (en) 2013-03-15 2019-04-18 The Regents Of The University Of California Multi-site transcutaneous electrical stimulation of the spinal cord for facilitation of locomotion
US10190235B2 (en) * 2013-05-24 2019-01-29 Taiwan Semiconductor Manufacturing Company, Ltd. Wafer supporting structure and method for forming the same
AU2014324660A1 (en) 2013-09-27 2016-04-21 The Regents Of The University Of California Engaging the cervical spinal cord circuitry to re-enable volitional control of hand function in tetraplegic subjects
EP3127141B1 (de) * 2014-04-01 2021-03-24 EV Group E. Thallner GmbH Verfahren zur oberflächenreinigung von substraten
US9425063B2 (en) * 2014-06-19 2016-08-23 Infineon Technologies Ag Method of reducing an impurity concentration in a semiconductor body, method of manufacturing a semiconductor device and semiconductor device
US11235154B2 (en) 2017-02-17 2022-02-01 The University Of British Columbia Apparatus and methods for maintaining physiological functions
US12434068B2 (en) 2017-05-23 2025-10-07 The Regents Of The University Of California Accessing spinal networks to address sexual dysfunction
DE20168827T1 (de) 2017-06-30 2021-01-21 Gtx Medical B.V. System zur neuromodulierung
US12357828B2 (en) 2017-12-05 2025-07-15 Ecole Polytechnique Federale De Lausanne (Epfl) System for planning and/or providing neuromodulation
WO2019110400A1 (en) 2017-12-05 2019-06-13 Ecole Polytechnique Federale De Lausanne (Epfl) A system for planning and/or providing neuromodulation
US12478777B2 (en) 2018-08-23 2025-11-25 The Regents Of The University Of California Non-invasive spinal cord stimulation for nerve root palsy, cauda equina syndrome, and restoration of upper extremity function
EP3653260A1 (en) 2018-11-13 2020-05-20 GTX medical B.V. Sensor in clothing of limbs or footwear
DE18205821T1 (de) 2018-11-13 2020-12-24 Gtx Medical B.V. Steuerungssystem zur bewegungsrekonstruktion und/oder wiederherstellung für einen patienten
EP3695878B1 (en) 2019-02-12 2023-04-19 ONWARD Medical N.V. A system for neuromodulation
EP3827871A1 (en) 2019-11-27 2021-06-02 ONWARD Medical B.V. Neuromodulation system
EP3827875B1 (en) 2019-11-27 2023-07-05 ONWARD Medical N.V. Neuromodulation system

Family Cites Families (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2550371A1 (de) * 1975-11-10 1977-05-12 Ibm Deutschland Verfahren zum thermischen oxydieren von silicium
FR2681472B1 (fr) 1991-09-18 1993-10-29 Commissariat Energie Atomique Procede de fabrication de films minces de materiau semiconducteur.
FR2715501B1 (fr) 1994-01-26 1996-04-05 Commissariat Energie Atomique Procédé de dépôt de lames semiconductrices sur un support.
JP4103968B2 (ja) 1996-09-18 2008-06-18 株式会社半導体エネルギー研究所 絶縁ゲイト型半導体装置
US6534380B1 (en) 1997-07-18 2003-03-18 Denso Corporation Semiconductor substrate and method of manufacturing the same
US6388652B1 (en) 1997-08-20 2002-05-14 Semiconductor Energy Laboratory Co., Ltd. Electrooptical device
US6686623B2 (en) 1997-11-18 2004-02-03 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile memory and electronic apparatus
TW508378B (en) * 1998-03-09 2002-11-01 Shinetsu Handotai Kk A method for producing a silicon single crystal wafer and a silicon single crystal wafer
JPH11307747A (ja) * 1998-04-17 1999-11-05 Nec Corp Soi基板およびその製造方法
JP3500063B2 (ja) 1998-04-23 2004-02-23 信越半導体株式会社 剥離ウエーハを再利用する方法および再利用に供されるシリコンウエーハ
TW505709B (en) * 1998-05-22 2002-10-11 Shinetsu Handotai Kk A method for producing an epitaxial silicon single crystal wafer and the epitaxial silicon single crystal wafer
JP2000012864A (ja) 1998-06-22 2000-01-14 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
US6271101B1 (en) 1998-07-29 2001-08-07 Semiconductor Energy Laboratory Co., Ltd. Process for production of SOI substrate and process for production of semiconductor device
JP4476390B2 (ja) 1998-09-04 2010-06-09 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2000349264A (ja) * 1998-12-04 2000-12-15 Canon Inc 半導体ウエハの製造方法、使用方法および利用方法
JP2000349266A (ja) 1999-03-26 2000-12-15 Canon Inc 半導体部材の製造方法、半導体基体の利用方法、半導体部材の製造システム、半導体部材の生産管理方法及び堆積膜形成装置の利用方法
JP4379943B2 (ja) 1999-04-07 2009-12-09 株式会社デンソー 半導体基板の製造方法および半導体基板製造装置
JP2001144275A (ja) * 1999-08-27 2001-05-25 Shin Etsu Handotai Co Ltd 貼り合わせsoiウエーハの製造方法および貼り合わせsoiウエーハ
KR100682190B1 (ko) * 1999-09-07 2007-02-12 동경 엘렉트론 주식회사 실리콘 산질화물을 포함하는 절연막의 형성 방법 및 장치
US6846718B1 (en) * 1999-10-14 2005-01-25 Shin-Etsu Handotai Co., Ltd. Method for producing SOI wafer and SOI wafer
JP3943782B2 (ja) 1999-11-29 2007-07-11 信越半導体株式会社 剥離ウエーハの再生処理方法及び再生処理された剥離ウエーハ
JP2002110949A (ja) * 2000-09-28 2002-04-12 Canon Inc Soiの熱処理方法及び製造方法
US7119365B2 (en) 2002-03-26 2006-10-10 Sharp Kabushiki Kaisha Semiconductor device and manufacturing method thereof, SOI substrate and display device using the same, and manufacturing method of the SOI substrate
JP4772258B2 (ja) 2002-08-23 2011-09-14 シャープ株式会社 Soi基板の製造方法
US7508034B2 (en) 2002-09-25 2009-03-24 Sharp Kabushiki Kaisha Single-crystal silicon substrate, SOI substrate, semiconductor device, display device, and manufacturing method of semiconductor device
JP2004134675A (ja) 2002-10-11 2004-04-30 Sharp Corp Soi基板、表示装置およびsoi基板の製造方法
JP4699675B2 (ja) * 2002-10-08 2011-06-15 信越半導体株式会社 アニールウェーハの製造方法
JP2004193515A (ja) * 2002-12-13 2004-07-08 Shin Etsu Handotai Co Ltd Soiウエーハの製造方法
US6809370B1 (en) * 2003-07-31 2004-10-26 Texas Instruments Incorporated High-k gate dielectric with uniform nitrogen profile and methods for making the same
US7052978B2 (en) * 2003-08-28 2006-05-30 Intel Corporation Arrangements incorporating laser-induced cleaving
JP5110772B2 (ja) 2004-02-03 2012-12-26 株式会社半導体エネルギー研究所 半導体薄膜層を有する基板の製造方法
JP2006294737A (ja) * 2005-04-07 2006-10-26 Sumco Corp Soi基板の製造方法及びその製造における剥離ウェーハの再生処理方法。
JP4715470B2 (ja) 2005-11-28 2011-07-06 株式会社Sumco 剥離ウェーハの再生加工方法及びこの方法により再生加工された剥離ウェーハ
EP1835533B1 (en) 2006-03-14 2020-06-03 Soitec Method for manufacturing compound material wafers and method for recycling a used donor substrate
FR2899380B1 (fr) 2006-03-31 2008-08-29 Soitec Sa Procede de revelation de defauts cristallins dans un substrat massif.
JP5314838B2 (ja) * 2006-07-14 2013-10-16 信越半導体株式会社 剥離ウェーハを再利用する方法
EP1978554A3 (en) * 2007-04-06 2011-10-12 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor substrate comprising implantation and separation steps
JP5289805B2 (ja) * 2007-05-10 2013-09-11 株式会社半導体エネルギー研究所 半導体装置製造用基板の作製方法
EP1993127B1 (en) * 2007-05-18 2013-04-24 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of SOI substrate
US20090004764A1 (en) * 2007-06-29 2009-01-01 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing SOI substrate and method for manufacturing semiconductor device
KR101499175B1 (ko) 2007-10-04 2015-03-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 기판의 제조방법
JP2009272471A (ja) * 2008-05-08 2009-11-19 Sumco Corp 貼り合わせウェーハの製造方法
US20100022070A1 (en) 2008-07-22 2010-01-28 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing soi substrate

Similar Documents

Publication Publication Date Title
JP2010272851A5 (enExample)
JP2012054540A5 (ja) Soi基板の作製方法
JP2010034523A5 (enExample)
JP2010050444A5 (enExample)
JP2009173950A5 (enExample)
JP2009260314A5 (enExample)
JP2009212503A5 (enExample)
JP2009260295A5 (ja) 半導体基板の作製方法
JP2010123931A5 (ja) Soi基板の作製方法
JP2009135465A5 (enExample)
JP2009260315A5 (enExample)
JP2009212502A5 (enExample)
JP2009111362A5 (enExample)
JP2018093169A5 (enExample)
SG166060A1 (en) Method of manufacturing soi substrate
TWI456637B (zh) 絕緣層上覆矽(soi)基板之製造方法
JP2008294422A5 (enExample)
JP2010087492A5 (enExample)
JP2013038404A5 (enExample)
JP2009260312A5 (enExample)
SG160300A1 (en) Method for manufacturing soi substrate
JP2009260313A5 (enExample)
JP2010103515A5 (enExample)
JP2014103329A5 (enExample)
JP2005311199A5 (enExample)