JP2009260315A5 - - Google Patents
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- JP2009260315A5 JP2009260315A5 JP2009069955A JP2009069955A JP2009260315A5 JP 2009260315 A5 JP2009260315 A5 JP 2009260315A5 JP 2009069955 A JP2009069955 A JP 2009069955A JP 2009069955 A JP2009069955 A JP 2009069955A JP 2009260315 A5 JP2009260315 A5 JP 2009260315A5
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- crystal semiconductor
- semiconductor substrate
- substrate
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 claims 34
- 239000000758 substrate Substances 0.000 claims 34
- 239000013078 crystal Substances 0.000 claims 23
- 238000000034 method Methods 0.000 claims 14
- 238000004519 manufacturing process Methods 0.000 claims 12
- 230000003647 oxidation Effects 0.000 claims 8
- 238000007254 oxidation reaction Methods 0.000 claims 8
- 230000001678 irradiating effect Effects 0.000 claims 5
- 150000002500 ions Chemical class 0.000 claims 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 2
- 229910052801 chlorine Inorganic materials 0.000 claims 2
- 239000000460 chlorine Substances 0.000 claims 2
- 229910052736 halogen Inorganic materials 0.000 claims 2
- 150000002367 halogens Chemical class 0.000 claims 2
- 238000010438 heat treatment Methods 0.000 claims 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 239000007789 gas Substances 0.000 claims 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009069955A JP2009260315A (ja) | 2008-03-26 | 2009-03-23 | Ｓｏｉ基板の作製方法及び半導体装置の作製方法 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008079650 | 2008-03-26 | ||
| JP2009069955A JP2009260315A (ja) | 2008-03-26 | 2009-03-23 | Ｓｏｉ基板の作製方法及び半導体装置の作製方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2009260315A JP2009260315A (ja) | 2009-11-05 |
| JP2009260315A5 true JP2009260315A5 (enExample) | 2012-03-29 |
Family
ID=41117874
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009069955A Withdrawn JP2009260315A (ja) | 2008-03-26 | 2009-03-23 | Ｓｏｉ基板の作製方法及び半導体装置の作製方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US8021958B2 (enExample) |
| JP (1) | JP2009260315A (enExample) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060228492A1 (en) * | 2005-04-07 | 2006-10-12 | Sumco Corporation | Method for manufacturing SIMOX wafer |
| US20090027583A1 (en) * | 2007-07-27 | 2009-01-29 | Mcbroom Michael David | Magnetic-based visual display cover arrangement |
| JP5654206B2 (ja) * | 2008-03-26 | 2015-01-14 | 株式会社半導体エネルギー研究所 | Ｓｏｉ基板の作製方法及び該ｓｏｉ基板を用いた半導体装置 |
| EP2105957A3 (en) * | 2008-03-26 | 2011-01-19 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing soi substrate and method for manufacturing semiconductor device |
| CN101559627B (zh) * | 2009-05-25 | 2011-12-14 | 天津大学 | 粒子束辅助单晶脆性材料超精密加工方法 |
| US8338737B2 (en) | 2009-09-30 | 2012-12-25 | Apple Inc. | Computer housing |
| US7965498B2 (en) | 2009-09-30 | 2011-06-21 | Apple Inc. | Cover glass to housing interface system |
| KR20170091760A (ko) | 2009-11-27 | 2017-08-09 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| WO2011077966A1 (en) | 2009-12-25 | 2011-06-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| US8970446B2 (en) | 2011-07-01 | 2015-03-03 | Apple Inc. | Electronic device with magnetic antenna mounting |
| DE102014006328A1 (de) * | 2014-04-30 | 2015-11-05 | Siltectra Gmbh | Kombiniertes Festkörperherstellungsverfahren mit Laserbehandlung und temperaturinduzierten Spannungen zur Erzeugung dreidimensionaler Festkörper |
| US10593818B2 (en) * | 2016-12-09 | 2020-03-17 | The Boeing Company | Multijunction solar cell having patterned emitter and method of making the solar cell |
| JP7558666B2 (ja) * | 2020-03-02 | 2024-10-01 | 株式会社東京精密 | エッチング処理後シリコンウェハの表面改質の方法 |
Family Cites Families (36)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0254532A (ja) * | 1988-08-17 | 1990-02-23 | Sony Corp | Ｓｏｉ基板の製造方法 |
| FR2681472B1 (fr) | 1991-09-18 | 1993-10-29 | Commissariat Energie Atomique | Procede de fabrication de films minces de materiau semiconducteur. |
| US6534380B1 (en) | 1997-07-18 | 2003-03-18 | Denso Corporation | Semiconductor substrate and method of manufacturing the same |
| JP2000012864A (ja) | 1998-06-22 | 2000-01-14 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
| US6271101B1 (en) | 1998-07-29 | 2001-08-07 | Semiconductor Energy Laboratory Co., Ltd. | Process for production of SOI substrate and process for production of semiconductor device |
| JP2000077287A (ja) * | 1998-08-26 | 2000-03-14 | Nissin Electric Co Ltd | 結晶薄膜基板の製造方法 |
| JP4476390B2 (ja) | 1998-09-04 | 2010-06-09 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP2000124092A (ja) | 1998-10-16 | 2000-04-28 | Shin Etsu Handotai Co Ltd | 水素イオン注入剥離法によってｓｏｉウエーハを製造する方法およびこの方法で製造されたｓｏｉウエーハ |
| JP4379943B2 (ja) * | 1999-04-07 | 2009-12-09 | 株式会社デンソー | 半導体基板の製造方法および半導体基板製造装置 |
| FR2797713B1 (fr) * | 1999-08-20 | 2002-08-02 | Soitec Silicon On Insulator | Procede de traitement de substrats pour la microelectronique et substrats obtenus par ce procede |
| TW544938B (en) | 2001-06-01 | 2003-08-01 | Semiconductor Energy Lab | Method of manufacturing a semiconductor device |
| US7199027B2 (en) | 2001-07-10 | 2007-04-03 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor film by plasma CVD using a noble gas and nitrogen |
| JP4024508B2 (ja) | 2001-10-09 | 2007-12-19 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP4289837B2 (ja) * | 2002-07-15 | 2009-07-01 | アプライド マテリアルズ インコーポレイテッド | イオン注入方法及びｓｏｉウエハの製造方法 |
| US7129123B2 (en) * | 2002-08-27 | 2006-10-31 | Shin-Etsu Handotai Co., Ltd. | SOI wafer and a method for producing an SOI wafer |
| JP2004193515A (ja) * | 2002-12-13 | 2004-07-08 | Shin Etsu Handotai Co Ltd | Ｓｏｉウエーハの製造方法 |
| US7348222B2 (en) | 2003-06-30 | 2008-03-25 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a thin film transistor and method for manufacturing a semiconductor device |
| JP4285244B2 (ja) * | 2004-01-08 | 2009-06-24 | 株式会社Ｓｕｍｃｏ | Ｓｏｉウェーハの作製方法 |
| JP4759919B2 (ja) * | 2004-01-16 | 2011-08-31 | セイコーエプソン株式会社 | 電気光学装置の製造方法 |
| JP5110772B2 (ja) | 2004-02-03 | 2012-12-26 | 株式会社半導体エネルギー研究所 | 半導体薄膜層を有する基板の製造方法 |
| US7579654B2 (en) * | 2006-05-31 | 2009-08-25 | Corning Incorporated | Semiconductor on insulator structure made using radiation annealing |
| US20070281440A1 (en) * | 2006-05-31 | 2007-12-06 | Jeffrey Scott Cites | Producing SOI structure using ion shower |
| CN101281912B (zh) | 2007-04-03 | 2013-01-23 | 株式会社半导体能源研究所 | Soi衬底及其制造方法以及半导体装置 |
| KR101447048B1 (ko) | 2007-04-20 | 2014-10-06 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Ｓｏｉ 기판 및 반도체장치의 제조방법 |
| KR101440930B1 (ko) | 2007-04-20 | 2014-09-15 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Ｓｏｉ 기판의 제작방법 |
| KR101436116B1 (ko) | 2007-04-27 | 2014-09-01 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Ｓｏｉ 기판 및 그 제조 방법, 및 반도체 장치 |
| JP5289805B2 (ja) | 2007-05-10 | 2013-09-11 | 株式会社半導体エネルギー研究所 | 半導体装置製造用基板の作製方法 |
| EP1993127B1 (en) | 2007-05-18 | 2013-04-24 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of SOI substrate |
| TWI476927B (zh) | 2007-05-18 | 2015-03-11 | Semiconductor Energy Lab | 半導體裝置的製造方法 |
| US7745268B2 (en) | 2007-06-01 | 2010-06-29 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a semiconductor device with irradiation of single crystal semiconductor layer in an inert atmosphere |
| US7772054B2 (en) | 2007-06-15 | 2010-08-10 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| JP5688203B2 (ja) | 2007-11-01 | 2015-03-25 | 株式会社半導体エネルギー研究所 | 半導体基板の作製方法 |
| US7858495B2 (en) | 2008-02-04 | 2010-12-28 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing SOI substrate |
| JP2009260313A (ja) | 2008-03-26 | 2009-11-05 | Semiconductor Energy Lab Co Ltd | Ｓｏｉ基板の作製方法及び半導体装置の作製方法 |
| EP2105957A3 (en) | 2008-03-26 | 2011-01-19 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing soi substrate and method for manufacturing semiconductor device |
| JP5654206B2 (ja) | 2008-03-26 | 2015-01-14 | 株式会社半導体エネルギー研究所 | Ｓｏｉ基板の作製方法及び該ｓｏｉ基板を用いた半導体装置 |
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2009
- 2009-03-23 JP JP2009069955A patent/JP2009260315A/ja not_active Withdrawn
- 2009-03-25 US US12/410,654 patent/US8021958B2/en not_active Expired - Fee Related