JP2009135437A5 - - Google Patents
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- Publication number
- JP2009135437A5 JP2009135437A5 JP2008258236A JP2008258236A JP2009135437A5 JP 2009135437 A5 JP2009135437 A5 JP 2009135437A5 JP 2008258236 A JP2008258236 A JP 2008258236A JP 2008258236 A JP2008258236 A JP 2008258236A JP 2009135437 A5 JP2009135437 A5 JP 2009135437A5
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- crystal semiconductor
- semiconductor substrate
- substrate
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims 42
- 239000004065 semiconductor Substances 0.000 claims 41
- 239000013078 crystal Substances 0.000 claims 33
- 238000004519 manufacturing process Methods 0.000 claims 8
- 238000000034 method Methods 0.000 claims 8
- 150000002500 ions Chemical class 0.000 claims 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 2
- 238000003776 cleavage reaction Methods 0.000 claims 2
- 238000010438 heat treatment Methods 0.000 claims 2
- 230000001678 irradiating effect Effects 0.000 claims 2
- 230000007017 scission Effects 0.000 claims 2
- 239000007789 gas Substances 0.000 claims 1
- 239000011521 glass Substances 0.000 claims 1
- 238000002844 melting Methods 0.000 claims 1
- 230000008018 melting Effects 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008258236A JP5688203B2 (ja) | 2007-11-01 | 2008-10-03 | 半導体基板の作製方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007285559 | 2007-11-01 | ||
| JP2007285559 | 2007-11-01 | ||
| JP2008258236A JP5688203B2 (ja) | 2007-11-01 | 2008-10-03 | 半導体基板の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009135437A JP2009135437A (ja) | 2009-06-18 |
| JP2009135437A5 true JP2009135437A5 (enExample) | 2011-11-04 |
| JP5688203B2 JP5688203B2 (ja) | 2015-03-25 |
Family
ID=40587264
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008258236A Expired - Fee Related JP5688203B2 (ja) | 2007-11-01 | 2008-10-03 | 半導体基板の作製方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20090115028A1 (enExample) |
| JP (1) | JP5688203B2 (enExample) |
| KR (1) | KR101511070B1 (enExample) |
| CN (1) | CN101425449B (enExample) |
| TW (1) | TWI533363B (enExample) |
Families Citing this family (45)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7877895B2 (en) * | 2006-06-26 | 2011-02-01 | Tokyo Electron Limited | Substrate processing apparatus |
| JP2009135430A (ja) * | 2007-10-10 | 2009-06-18 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
| TWI493609B (zh) * | 2007-10-23 | 2015-07-21 | Semiconductor Energy Lab | 半導體基板、顯示面板及顯示裝置的製造方法 |
| JP5548356B2 (ja) * | 2007-11-05 | 2014-07-16 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP5404064B2 (ja) | 2008-01-16 | 2014-01-29 | 株式会社半導体エネルギー研究所 | レーザ処理装置、および半導体基板の作製方法 |
| JP2009260315A (ja) * | 2008-03-26 | 2009-11-05 | Semiconductor Energy Lab Co Ltd | Soi基板の作製方法及び半導体装置の作製方法 |
| JP5654206B2 (ja) | 2008-03-26 | 2015-01-14 | 株式会社半導体エネルギー研究所 | Soi基板の作製方法及び該soi基板を用いた半導体装置 |
| EP2210696A1 (en) * | 2009-01-26 | 2010-07-28 | Excico France | Method and apparatus for irradiating a semiconductor material surface by laser energy |
| CN101559627B (zh) * | 2009-05-25 | 2011-12-14 | 天津大学 | 粒子束辅助单晶脆性材料超精密加工方法 |
| WO2010150671A1 (en) | 2009-06-24 | 2010-12-29 | Semiconductor Energy Laboratory Co., Ltd. | Method for reprocessing semiconductor substrate and method for manufacturing soi substrate |
| WO2011024619A1 (en) * | 2009-08-25 | 2011-03-03 | Semiconductor Energy Laboratory Co., Ltd. | Method for reprocessing semiconductor substrate, method for manufacturing reprocessed semiconductor substrate, and method for manufacturing soi substrate |
| US8318588B2 (en) * | 2009-08-25 | 2012-11-27 | Semiconductor Energy Laboratory Co., Ltd. | Method for reprocessing semiconductor substrate, method for manufacturing reprocessed semiconductor substrate, and method for manufacturing SOI substrate |
| WO2011043178A1 (en) * | 2009-10-09 | 2011-04-14 | Semiconductor Energy Laboratory Co., Ltd. | Reprocessing method of semiconductor substrate, manufacturing method of reprocessed semiconductor substrate, and manufacturing method of soi substrate |
| CN102064129A (zh) * | 2009-11-13 | 2011-05-18 | 英特赛尔美国股份有限公司 | 使用宽度可变的掩模开口形成两个或更多个器件结构的半导体工艺 |
| US8673162B2 (en) * | 2009-12-10 | 2014-03-18 | Applied Materials, Inc. | Methods for substrate surface planarization during magnetic patterning by plasma immersion ion implantation |
| JP5483347B2 (ja) * | 2010-03-23 | 2014-05-07 | 住友重機械工業株式会社 | 半導体アニール装置、及び半導体アニール方法 |
| CN103069717B (zh) | 2010-08-06 | 2018-01-30 | 株式会社半导体能源研究所 | 半导体集成电路 |
| JP5223998B2 (ja) * | 2010-11-29 | 2013-06-26 | 大日本印刷株式会社 | 評価用基板 |
| JP5752454B2 (ja) * | 2011-03-23 | 2015-07-22 | 東京エレクトロン株式会社 | プラズマ処理装置及び温度測定方法 |
| US9123529B2 (en) | 2011-06-21 | 2015-09-01 | Semiconductor Energy Laboratory Co., Ltd. | Method for reprocessing semiconductor substrate, method for manufacturing reprocessed semiconductor substrate, and method for manufacturing SOI substrate |
| TWI467125B (zh) | 2012-09-24 | 2015-01-01 | Ind Tech Res Inst | 量測系統與量測方法 |
| US20180226311A1 (en) * | 2014-09-25 | 2018-08-09 | Nippon Electric Glass Co., Ltd. | Supporting glass substrate, laminate, semiconductor package, electronic device, and method of manufacturing semiconductor package |
| KR102509883B1 (ko) * | 2015-06-29 | 2023-03-13 | 아이피지 포토닉스 코포레이션 | 비정질 실리콘 기재의 균일한 결정화를 위한 섬유 레이저-기반 시스템 |
| JP6427712B2 (ja) * | 2016-03-25 | 2018-11-21 | 日本碍子株式会社 | 接合方法 |
| US20180033609A1 (en) * | 2016-07-28 | 2018-02-01 | QMAT, Inc. | Removal of non-cleaved/non-transferred material from donor substrate |
| TWI604622B (zh) | 2016-07-14 | 2017-11-01 | 財團法人工業技術研究院 | 電極吸附染料的方法及其裝置 |
| JP6764305B2 (ja) | 2016-10-04 | 2020-09-30 | 株式会社日本製鋼所 | レーザ照射装置、半導体装置の製造方法、及び、レーザ照射装置の動作方法 |
| CN106645809A (zh) * | 2016-10-14 | 2017-05-10 | 厦门大学 | 一种双重包覆壳层隔绝针尖的制备方法 |
| CN107293483A (zh) * | 2017-06-09 | 2017-10-24 | 苏晋苗 | 一种激光芯片平坦化加工装置及方法 |
| JP6546230B2 (ja) * | 2017-08-28 | 2019-07-17 | ファナック株式会社 | 機械学習装置、機械学習システム及び機械学習方法 |
| CN110085510B (zh) * | 2018-01-26 | 2021-06-04 | 沈阳硅基科技有限公司 | 一种多层单晶硅薄膜的制备方法 |
| JP7112879B2 (ja) * | 2018-05-15 | 2022-08-04 | 株式会社サイオクス | 窒化物半導体積層物の製造方法、膜質検査方法および半導体成長装置の検査方法 |
| JP2020031151A (ja) * | 2018-08-23 | 2020-02-27 | キオクシア株式会社 | 半導体記憶装置およびその製造方法 |
| WO2020095421A1 (ja) * | 2018-11-08 | 2020-05-14 | 日本碍子株式会社 | 電気光学素子のための複合基板とその製造方法 |
| CN114815329B (zh) | 2018-11-08 | 2025-10-10 | 日本碍子株式会社 | 电光元件用的复合基板及其制造方法 |
| JP7218056B2 (ja) * | 2019-02-20 | 2023-02-06 | 株式会社ディスコ | チップ及び枠体の少なくともいずれかを製造する方法 |
| JP7336256B2 (ja) * | 2019-05-10 | 2023-08-31 | 東京エレクトロン株式会社 | 載置台及び載置台の作製方法 |
| CN110517981A (zh) * | 2019-08-29 | 2019-11-29 | 上海新傲科技股份有限公司 | 器件层减薄的方法及衬底的制备方法 |
| US11943845B2 (en) | 2019-09-12 | 2024-03-26 | Watlow Electric Manufacturing Company | Ceramic heater and method of forming using transient liquid phase bonding |
| JP7182577B2 (ja) * | 2020-03-24 | 2022-12-02 | 株式会社Kokusai Electric | 基板処理方法、半導体装置の製造方法、基板処理装置、およびプログラム |
| CN113008798A (zh) * | 2021-03-15 | 2021-06-22 | 上海华力微电子有限公司 | 一种照明光路、缺陷检测装置及光强测量方法 |
| CN113253492B (zh) * | 2021-04-27 | 2023-01-03 | 苏州科韵激光科技有限公司 | 一种显示屏修复方法及装置 |
| CN113552856B (zh) * | 2021-09-22 | 2021-12-10 | 成都数之联科技有限公司 | 工艺参数根因定位方法和相关装置 |
| JP2024066112A (ja) * | 2022-11-01 | 2024-05-15 | 株式会社Screenホールディングス | 基板処理装置および基板処理方法 |
| KR102566972B1 (ko) * | 2022-11-18 | 2023-08-16 | 에스케이엔펄스 주식회사 | 반도체 소자 제조 장치용 부품, 이의 제조방법, 이를 포함하는 반도체 소자 제조 장치 및 반도체 소자의 제조 방법 |
Family Cites Families (34)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5362667A (en) * | 1992-07-28 | 1994-11-08 | Harris Corporation | Bonded wafer processing |
| FR2681472B1 (fr) * | 1991-09-18 | 1993-10-29 | Commissariat Energie Atomique | Procede de fabrication de films minces de materiau semiconducteur. |
| TW406861U (en) * | 1994-07-28 | 2000-09-21 | Semiconductor Energy Lab | Laser processing system |
| JPH08255762A (ja) * | 1995-03-17 | 1996-10-01 | Nec Corp | 半導体デバイスの製造方法 |
| US6534380B1 (en) * | 1997-07-18 | 2003-03-18 | Denso Corporation | Semiconductor substrate and method of manufacturing the same |
| CN1241803A (zh) * | 1998-05-15 | 2000-01-19 | 佳能株式会社 | 半导体衬底、半导体薄膜以及多层结构的制造工艺 |
| JP2000012864A (ja) * | 1998-06-22 | 2000-01-14 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
| JP2000077287A (ja) * | 1998-08-26 | 2000-03-14 | Nissin Electric Co Ltd | 結晶薄膜基板の製造方法 |
| JP2002063797A (ja) * | 2000-08-22 | 2002-02-28 | Mitsubishi Electric Corp | 不揮発性半導体記憶装置 |
| CN1354495A (zh) * | 2000-09-05 | 2002-06-19 | 索尼株式会社 | 半导体薄膜及其生产方法和设备、及生产单晶薄膜的方法 |
| US6583440B2 (en) * | 2000-11-30 | 2003-06-24 | Seiko Epson Corporation | Soi substrate, element substrate, semiconductor device, electro-optical apparatus, electronic equipment, method of manufacturing the soi substrate, method of manufacturing the element substrate, and method of manufacturing the electro-optical apparatus |
| JP4507395B2 (ja) * | 2000-11-30 | 2010-07-21 | セイコーエプソン株式会社 | 電気光学装置用素子基板の製造方法 |
| JP2002246310A (ja) * | 2001-02-14 | 2002-08-30 | Sony Corp | 半導体薄膜の形成方法及び半導体装置の製造方法、これらの方法の実施に使用する装置、並びに電気光学装置 |
| JP4439789B2 (ja) * | 2001-04-20 | 2010-03-24 | 株式会社半導体エネルギー研究所 | レーザ照射装置、並びに半導体装置の作製方法 |
| US7253032B2 (en) * | 2001-04-20 | 2007-08-07 | Semiconductor Energy Laboratory Co., Ltd. | Method of flattening a crystallized semiconductor film surface by using a plate |
| JP2003188387A (ja) * | 2001-12-20 | 2003-07-04 | Sony Corp | 薄膜トランジスタ及びその製造方法 |
| DE10224160A1 (de) * | 2002-05-31 | 2003-12-18 | Advanced Micro Devices Inc | Eine Diffusionsbarrierenschicht in Halbleitersubstraten zur Reduzierung der Kupferkontamination von der Rückseite her |
| JP2004134675A (ja) * | 2002-10-11 | 2004-04-30 | Sharp Corp | Soi基板、表示装置およびsoi基板の製造方法 |
| US7508034B2 (en) * | 2002-09-25 | 2009-03-24 | Sharp Kabushiki Kaisha | Single-crystal silicon substrate, SOI substrate, semiconductor device, display device, and manufacturing method of semiconductor device |
| US7176528B2 (en) * | 2003-02-18 | 2007-02-13 | Corning Incorporated | Glass-based SOI structures |
| US7399681B2 (en) * | 2003-02-18 | 2008-07-15 | Corning Incorporated | Glass-based SOI structures |
| JP4799825B2 (ja) * | 2003-03-03 | 2011-10-26 | 株式会社半導体エネルギー研究所 | レーザ照射方法 |
| JP4717385B2 (ja) * | 2003-08-27 | 2011-07-06 | 三菱電機株式会社 | 半導体装置 |
| JP4759919B2 (ja) * | 2004-01-16 | 2011-08-31 | セイコーエプソン株式会社 | 電気光学装置の製造方法 |
| US7875506B2 (en) * | 2004-10-13 | 2011-01-25 | Semiconductor Energy Laboratory Co., Ltd. | Etching method and manufacturing method of semiconductor device |
| US7148124B1 (en) * | 2004-11-18 | 2006-12-12 | Alexander Yuri Usenko | Method for forming a fragile layer inside of a single crystalline substrate preferably for making silicon-on-insulator wafers |
| US8101498B2 (en) * | 2005-04-21 | 2012-01-24 | Pinnington Thomas Henry | Bonded intermediate substrate and method of making same |
| US7579654B2 (en) * | 2006-05-31 | 2009-08-25 | Corning Incorporated | Semiconductor on insulator structure made using radiation annealing |
| US20070281440A1 (en) * | 2006-05-31 | 2007-12-06 | Jeffrey Scott Cites | Producing SOI structure using ion shower |
| US7608521B2 (en) * | 2006-05-31 | 2009-10-27 | Corning Incorporated | Producing SOI structure using high-purity ion shower |
| EP1993127B1 (en) * | 2007-05-18 | 2013-04-24 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of SOI substrate |
| US7875532B2 (en) * | 2007-06-15 | 2011-01-25 | Semiconductor Energy Laboratory Co., Ltd. | Substrate for manufacturing semiconductor device and manufacturing method thereof |
| US7795111B2 (en) * | 2007-06-27 | 2010-09-14 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of SOI substrate and manufacturing method of semiconductor device |
| CN101796613B (zh) * | 2007-09-14 | 2012-06-27 | 株式会社半导体能源研究所 | 半导体装置及电子设备 |
-
2008
- 2008-10-03 JP JP2008258236A patent/JP5688203B2/ja not_active Expired - Fee Related
- 2008-10-06 TW TW097138416A patent/TWI533363B/zh not_active IP Right Cessation
- 2008-10-07 US US12/246,569 patent/US20090115028A1/en not_active Abandoned
- 2008-10-10 CN CN2008101698829A patent/CN101425449B/zh not_active Expired - Fee Related
- 2008-10-10 KR KR20080099867A patent/KR101511070B1/ko not_active Expired - Fee Related
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